• 대한화학회지
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• 제57권6호
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• pp.677-683
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• 2013

A theoretical study of the electronic structures of $TiC_{1-x}$ and $Ti_{1-x}W_xC$ (x = 0, 0.25) is presented. The density of states and crystal orbital overlap population calculations were used to interpret variations of elastic properties induced by carbon vacancies and alloying substitutions. Our results show why the introduction of vacancies into TiC reduces bulk moduli, while W substitution at a Ti site increases the elastic modulus. The effect of the point defects on the bonding in TiC is investigated by means of extended Huckel tight-binding band calculations.

• 한국세라믹학회지
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• 제34권5호
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• pp.512-518
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• 1997

The high temperature oxidation behaviors of titanium nitride films prepared by PACVD technique were studied in the temperature range of from 50$0^{\circ}C$ to 80$0^{\circ}C$ under air atmosphere. Ti0.88Al0.12N film, which showed the excellent microhardness from the previous work, was investigated on its oxidation resistance compared with pure TiN film. Ti-Al-N film showed superior oxidation resistance up to $700^{\circ}C$, whereas TiN film was fast oxidized into rutile TiO2 crystallites from at 50$0^{\circ}C$. It was found that an amorphous layer having AlxTiyOz formula was formed on the surface region due to outward diffusion of Al ions at the initial stage of oxidation. The amorphous oxide layer played a role as a barrier against oxygen diffusion, protected the remained nitride layer from further oxidation, and thus, resulted in the high oxidation resistive characteristics of Ti-Al-N film.

• 한국세라믹학회지
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• 제27권7호
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• pp.916-924
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• 1990

The preparatin of the fine TiN powders by reduction-nitridation of TiCl3-Al-N2 system was attempted in the temperature range from 350$^{\circ}$to 100$0^{\circ}C$. The formation mechanism and kinetics of TiN were examined, and the resultant TiN powder was characterized by means of XRD, PSA and SEM-EPMA methods. TiN was formed at temperatrue higher than $600^{\circ}C$. As an intermediate phase, AlTi was obtained. The apparent activation energy for the formation of TiN was approximately 4.2kcal/mole(600$^{\circ}$~90$0^{\circ}C$). The crystallite size and lattice constnat of TiN powder obtained in the temperature range from 600$^{\circ}$to 100$0^{\circ}C$ for 2h at the Al/TiCl3 molar ratio of 1.0 were 160~255A and 4.231~4.239A, respectively. According to PSA measurement, the mean particle size ranged from 14.0 to 14.8${\mu}{\textrm}{m}$.

• 한국표면공학회지
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• 제15권4호
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• pp.208-217
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• 1982

To study the effect of TiC coating on weight change, microhardness, wear and heat - resistance of TiC layer, chemical vapour deposition on the various substrates has been carried out with the gaseous mixture of TiCl4, toluene, and H2 in the temperature range of 900 - 1000$^{\circ}C$. The results obtained are as follows ; (1) There is a limited value of carrier and reductant H2 gas flow rate, above which deteriorate effect on the TiC depoition arises (2) Increased thickness of TiC layer was resulted with increasing temperature and time. Better deposition was obtained with stainless steels and the best results were introduced by cobalt coating of substrates. (3) Wear resistance of the TiC coated specimen improved markedly. Heat resistivity of the coated steel showed excellent result, whereas the coated stainless Steels were infer-ior to the substrate.

• 한국재료학회지
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• 제19권2호
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• pp.55-60
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• 2009

In this study, Ti powder was fabricated from Ti scrap by a hydrogenation-dehydrogenation (HDH) method. The Ti powders were compacted by Spark plasma sintering (SPS) and the microstructure and mechanical properties of the powders were investigated. A hydrogenation reaction of Ti scrap occurred at temperatures near $450^{\circ}C$ with a sudden increase in the reaction temperature and a decrease in the pressure of the hydrogen gas as measured in a furnace during the hydrogenation process. In addition, a dehydrogenation process was carried out at $750^{\circ}C$ for 2hrs in a vacuum of $10^{-4}torr$. The Ti powder sizes obtained by hydrogenation-dehydrogenation and mechanical milling processes were in the range of $1{\sim}90{\mu}m$ and $1{\sim}100{\mu}m$, respectively. To fabricate Ti compacts, Ti powders were sintered under an applied uniaxial punch pressure of 40 MPa at in a range of $900{\sim}1200^{\circ}C$ for 5 min. The relative density of a SPSed compact was 99.6% at $1100^{\circ}C$, and the tensile strength decreased with an increase in the sintering temperature. However, the hardness increased as the sintering temperature increased.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1110-1111
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• 2006

[ $Ti_3SiC_2$ ] was coated with $Al_2O_3$, MgO and $SiO_2$ respectively by sol-gel method and cured at 900 and $1200^{\circ}C$. The coated oxides did not react with $Ti_3SiC_2$ at $900^{\circ}C$ but reacted with it to form $TiC_x$ at $1200^{\circ}C$. The specimen coated with $SiO_2$ at $900^{\circ}C$ formed a dense protecting layer and showed the best oxidation resistance at $800^{\circ}C$ in air. However, the dense protecting layers did not form in $Al_2O_3$ and MgO coated specimens cured even at $900^{\circ}C$. MgO coated specimen showed the worst improvement in the oxidation resistance because the reactivity of MgO with $Ti_3SiC_2$ was highest. On the other hand, the electrical conductivities were measured in MgO and $Al_2O_3$ coated specimens to have TiCx but could not be measured in the $SiO_2$ coated ones because of the nonconductive dense protected layers.

• 대한화학회지
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• 제19권2호
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• pp.92-97
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• 1975

$TiCl(OC_6H_5)_3{\cdot}C_6H_5OH\;및\;Ti(OC_6H_5)_4{\cdot}C_6H_5OH$의 분자량 측정과 전자 흡수스펙트럼을 고찰함으로써 이들 두 유기-리탄 화합물들의 용액 상태에서의 분자 및 전자구조에 대하여 연구하였다. $Ti(OC_6H_5)_4{\cdot}C_6H_5OH$는 고체상태에서는 이합체로 존재하지만 분자량 측정 결과 묽은 용액에서는 단위체로 완전해리되며 $TiCl(OC_6H_5)_3{\cdot}C_6H_5OH$도 8mM농도에서 해리를 시작함을 알수 있었다. 따라서 이들 두 착화합물은 묽은 용액에서 5배위 착화합물로 존재하며 분자구조는 trigonalbipyramid으로 생각된다. 두 화합물의 전자 흡수스펙트럼은 자외부쪽에 똑같은 진동구조를 갖는 벤젠고리 특유의 흡수밴드를 나타내며 가시부에서는 $TiCl(OC_6H_5)_3{\cdot}C_6H_5OH$의 경우 26.8kK에 $Ti(OC_6H_5)_4{\cdot}C_6H_5OH$는 29.6kK에 각각 흡수 밴드를 나타낸다. 이가시부 흡수밴드는 리간드에서 금속쪽으로 전하이전에 의한 $^1A_1''{\to}^1E'\;or\;^1E''$ 전이로 생각된다.

• 한국표면공학회지
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• 제34권2호
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• pp.135-141
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• 2001

Arc-melted Ti-6Al-4V, Ti-4Fe and Ti-(1,2) Si alloys were oxidized at 700, 800, 900 and $1000^{\circ}C$ in air. The oxidation resistance of Ti-4Fe was comparable to that of Ti-6Al-4V, while the oxidation resistance of Ti-(1,2) Si was superior to that of Ti-6Al-4V. Ti-2Si displayed the best oxidation resistance among the four alloys, but failed after oxidation at $1000^{\circ}C$ for 17h. The oxide scale formed on Ti-6Al-4V, Ti-4Fe and Ti-(1,2)Si consisted of ($TiO_2$ and a small amount of $Al_2$$O_3$), ($TiO_2$ and a small amount of dissolved iron), and ($TiO_2$ plus a small concentration of amorphous $SiO_2$), respectively. The oxide grains of the surface scale of the four alloys were generally fine and round.

• 전자공학회논문지A
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• 제28A권11호
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• pp.887-893
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• 1991

To take advantage of Ti-polycide, when it is contacted with both n+ and p+ active area of silicon, the effects of BF$_2$ on the formation of Ti-silicide were investigated with RTA temperature and dopant concentration. The intermediate phase C49 TiSi$_2$ appeared at $650^{\circ}C$ and the stable phase C54 TiSi2 was formed at $700^{\circ}C$. And the formation of Ti-silicide was hindered by BF$_2$ doping and this trend was decreased with increasing temperature. The out-diffusion phenomena of BF$_2$ into Ti silicide were not observed. And significantly, the native oxide was a chief factor preventing the formation of Ti-silicides.

• Korean Chemical Engineering Research
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• 제45권5호
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• pp.455-459
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• 2007

배리어(dielectric-barrier discharge: DBD) 반응기에서 솔-젤 방법으로 제조한 $Pt/TiO_2$를 넣고 플라즈마 에너지를 사용하여 메탄전환반응 연구를 수행하였다. 제조된 촉매는 기존 금속산화물과는 다른 방법으로 환원을 하였으며, 플라즈마를 사용한 환원방법(plasma-assisted reduction: PAR)이라고 명명하였다. $Pt/TiO_2$ 촉매는 Pt 담지량 및 소성온도에 관계없이 20분 이내에 환원이 완료되었다. 3 wt% $Pt/TiO_2$ 촉매와 5 wt% $Pt/TiO_2$ 촉매를 $600^{\circ}C$에서 소성하여 PAR 방법으로 환원했을 때 메탄의 전환율은 40%로 가장 높았다. DBD 반응기에서 $Pt/TiO_2$ 촉매를 사용하였을 경우 촉매가 없을 때보다 $C_2H_6$, $C_3H_8$와 $C_4H_{10}$과 같은 알칸의 선택성의 매우 높게 나타났다.