• Journal of the Korean Chemical Society
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• v.57 no.6
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• pp.677-683
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• 2013

A theoretical study of the electronic structures of $TiC_{1-x}$ and $Ti_{1-x}W_xC$ (x = 0, 0.25) is presented. The density of states and crystal orbital overlap population calculations were used to interpret variations of elastic properties induced by carbon vacancies and alloying substitutions. Our results show why the introduction of vacancies into TiC reduces bulk moduli, while W substitution at a Ti site increases the elastic modulus. The effect of the point defects on the bonding in TiC is investigated by means of extended Huckel tight-binding band calculations.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.512-518
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• 1997

The high temperature oxidation behaviors of titanium nitride films prepared by PACVD technique were studied in the temperature range of from 50$0^{\circ}C$ to 80$0^{\circ}C$ under air atmosphere. Ti0.88Al0.12N film, which showed the excellent microhardness from the previous work, was investigated on its oxidation resistance compared with pure TiN film. Ti-Al-N film showed superior oxidation resistance up to $700^{\circ}C$, whereas TiN film was fast oxidized into rutile TiO2 crystallites from at 50$0^{\circ}C$. It was found that an amorphous layer having AlxTiyOz formula was formed on the surface region due to outward diffusion of Al ions at the initial stage of oxidation. The amorphous oxide layer played a role as a barrier against oxygen diffusion, protected the remained nitride layer from further oxidation, and thus, resulted in the high oxidation resistive characteristics of Ti-Al-N film.

• Journal of the Korean Ceramic Society
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• v.27 no.7
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• pp.916-924
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• 1990

The preparatin of the fine TiN powders by reduction-nitridation of TiCl3-Al-N2 system was attempted in the temperature range from 350$^{\circ}$to 100$0^{\circ}C$. The formation mechanism and kinetics of TiN were examined, and the resultant TiN powder was characterized by means of XRD, PSA and SEM-EPMA methods. TiN was formed at temperatrue higher than $600^{\circ}C$. As an intermediate phase, AlTi was obtained. The apparent activation energy for the formation of TiN was approximately 4.2kcal/mole(600$^{\circ}$~90$0^{\circ}C$). The crystallite size and lattice constnat of TiN powder obtained in the temperature range from 600$^{\circ}$to 100$0^{\circ}C$ for 2h at the Al/TiCl3 molar ratio of 1.0 were 160~255A and 4.231~4.239A, respectively. According to PSA measurement, the mean particle size ranged from 14.0 to 14.8${\mu}{\textrm}{m}$.

• Journal of the Korean institute of surface engineering
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• v.15 no.4
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• pp.208-217
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• 1982

To study the effect of TiC coating on weight change, microhardness, wear and heat - resistance of TiC layer, chemical vapour deposition on the various substrates has been carried out with the gaseous mixture of TiCl4, toluene, and H2 in the temperature range of 900 - 1000$^{\circ}C$. The results obtained are as follows ; (1) There is a limited value of carrier and reductant H2 gas flow rate, above which deteriorate effect on the TiC depoition arises (2) Increased thickness of TiC layer was resulted with increasing temperature and time. Better deposition was obtained with stainless steels and the best results were introduced by cobalt coating of substrates. (3) Wear resistance of the TiC coated specimen improved markedly. Heat resistivity of the coated steel showed excellent result, whereas the coated stainless Steels were infer-ior to the substrate.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.55-60
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• 2009

In this study, Ti powder was fabricated from Ti scrap by a hydrogenation-dehydrogenation (HDH) method. The Ti powders were compacted by Spark plasma sintering (SPS) and the microstructure and mechanical properties of the powders were investigated. A hydrogenation reaction of Ti scrap occurred at temperatures near $450^{\circ}C$ with a sudden increase in the reaction temperature and a decrease in the pressure of the hydrogen gas as measured in a furnace during the hydrogenation process. In addition, a dehydrogenation process was carried out at $750^{\circ}C$ for 2hrs in a vacuum of $10^{-4}torr$. The Ti powder sizes obtained by hydrogenation-dehydrogenation and mechanical milling processes were in the range of $1{\sim}90{\mu}m$ and $1{\sim}100{\mu}m$, respectively. To fabricate Ti compacts, Ti powders were sintered under an applied uniaxial punch pressure of 40 MPa at in a range of $900{\sim}1200^{\circ}C$ for 5 min. The relative density of a SPSed compact was 99.6% at $1100^{\circ}C$, and the tensile strength decreased with an increase in the sintering temperature. However, the hardness increased as the sintering temperature increased.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1110-1111
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• 2006

[ $Ti_3SiC_2$ ] was coated with $Al_2O_3$, MgO and $SiO_2$ respectively by sol-gel method and cured at 900 and $1200^{\circ}C$. The coated oxides did not react with $Ti_3SiC_2$ at $900^{\circ}C$ but reacted with it to form $TiC_x$ at $1200^{\circ}C$. The specimen coated with $SiO_2$ at $900^{\circ}C$ formed a dense protecting layer and showed the best oxidation resistance at $800^{\circ}C$ in air. However, the dense protecting layers did not form in $Al_2O_3$ and MgO coated specimens cured even at $900^{\circ}C$. MgO coated specimen showed the worst improvement in the oxidation resistance because the reactivity of MgO with $Ti_3SiC_2$ was highest. On the other hand, the electrical conductivities were measured in MgO and $Al_2O_3$ coated specimens to have TiCx but could not be measured in the $SiO_2$ coated ones because of the nonconductive dense protected layers.

• Journal of the Korean Chemical Society
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• v.19 no.2
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• pp.92-97
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• 1975

The molecular and electronic structures of $TiCl(OC_6H_5)_3{\cdot}C_6H_5OH\;and\;Ti(OC_6H_5)_4{\cdot}C_6H_5OH$ have been studied by employing cryoscopic and electronic spectroscopic methods. The cryoscopic data have shown that the dimeric tetraphenoxytitanium(Ⅳ) phenolate in solid undergoes complete dissociation into monomer in solution and also the chlorocomplex starts dissociation around the concentration of 8 m mole/l. Therefore, these two Ti-complexes are pentacoordinated in dilute solution and the local symmetry of the titanium ion in these complexes seems to be trigonalbipyramid. The electronic spectra of $TiCl(OC_6H_5)_3{\cdot}C_6H_5OH$ and $Ti(OC_6H_5)_4{\cdot}C_6H_5OH$ each show two band, systems, one vibration-structural band characteristic of the aromatic ring in the near UV and another visible band at 26.8 kK, 29.6 kK, respectively, which are assigned as a ligand to metal charge transfer band corresponding to $^1A_1''{\to}^1E'\;or\;^1E''$ transition.

• Journal of the Korean institute of surface engineering
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• v.34 no.2
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• pp.135-141
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• 2001

Arc-melted Ti-6Al-4V, Ti-4Fe and Ti-(1,2) Si alloys were oxidized at 700, 800, 900 and $1000^{\circ}C$ in air. The oxidation resistance of Ti-4Fe was comparable to that of Ti-6Al-4V, while the oxidation resistance of Ti-(1,2) Si was superior to that of Ti-6Al-4V. Ti-2Si displayed the best oxidation resistance among the four alloys, but failed after oxidation at $1000^{\circ}C$ for 17h. The oxide scale formed on Ti-6Al-4V, Ti-4Fe and Ti-(1,2)Si consisted of ($TiO_2$ and a small amount of $Al_2$$O_3$), ($TiO_2$ and a small amount of dissolved iron), and ($TiO_2$ plus a small concentration of amorphous $SiO_2$), respectively. The oxide grains of the surface scale of the four alloys were generally fine and round.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.11
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• pp.887-893
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• 1991

To take advantage of Ti-polycide, when it is contacted with both n+ and p+ active area of silicon, the effects of BF$_2$ on the formation of Ti-silicide were investigated with RTA temperature and dopant concentration. The intermediate phase C49 TiSi$_2$ appeared at $650^{\circ}C$ and the stable phase C54 TiSi2 was formed at $700^{\circ}C$. And the formation of Ti-silicide was hindered by BF$_2$ doping and this trend was decreased with increasing temperature. The out-diffusion phenomena of BF$_2$ into Ti silicide were not observed. And significantly, the native oxide was a chief factor preventing the formation of Ti-silicides.

• Korean Chemical Engineering Research
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• v.45 no.5
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• pp.455-459
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• 2007

Plasma catalytic methane conversion was carried out in the presence of sol-gel derived $Pt/TiO_2$ catalysts within a dielectric-barrier discharge (DBD) reactor. Plasma-assisted reduction (PAR) was applied to reduce the prepared $Pt/TiO_2$ catalysts in DBD reactor, and prepared catalysts were successively reduced by PAR within 20 min irrespective of the Pt loading and the calcination temperature. The highest methane conversion was 40% when 3 wt% $Pt/TiO_2$ and 5 wt% $Pt/TiO_2$ catalysts were used after calcination at $600^{\circ}C$. The selectivities of light alkanes ($C_2H_6$, $C_3H_8$, $C_4H_{10}$) were highly increased when $Pt/TiO_2$ catalysts were used in DBD reactor.