• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.382-388
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• 2000

Hydrogenated amorphous carbon (a-C:H) films were fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The bonding structure of carbon and hydrogen in the a-C:H films has been investigated by varying the deposition conditions such as ECR power, gas composition of methane and hydrogen, deposition time, and negative DC self bias voltage. The bonding characteristics of the a-C:H thin film were analyzed using FTIR spectroscopy. The IR absorption peaks of the film were observed in the range of $2800\sim3000 \textrm{cm}^{-1}$. The atomic bonding structure of a-C:H film consisted of $sp^3$ and $sp^2$ bonding, most of which is composed of $sp^3$ bonding. The structure of the a-C:H films changed from $CH_3$ bonding to $CH_2$ or CH bonding as deposition time increased. We also found that the amount of dehydrogenation in a-C:H films was increased as the bias voltage increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.5-12
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• 2000

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single- crystalline 6H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 6H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented ($3.5^{\circ}$tilt) substrates from the (0001) basal plane in the <110> direction with the Si-face side of the wafer. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, transmittance spectra, Raman spectroscopy, XRD, Photoluninescence (PL) and transmission electron microscopy (TEM) were utilized. The best quality of 6H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_3H_8$ 0.2 sccm & $SiH_4$ 0.3 sccm.

• Korean Journal of Animal Reproduction
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• v.23 no.3
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• pp.257-262
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• 1999

This study was carried out to evaluate the effect of pH and storage temperature on the viability of boar sperm diluted with extender KpA for swine artificial insemination. The results obtained in this experiment were summarized as follows : 1. The viability of boar sperm diluted with KpA was higher than that with BTS during storage and especially more than 60% of sperm viability in KpA was maintained through 6 days. The pH values of all extenders were kept during storage of semens following dilution. 2. The sperm diluted with acidic (pH 6.3~6.8) or alkalic (pH 7.8~8.0) KpA and stored at 4$^{\circ}C$ or 37$^{\circ}C$ were more sensitive in viability than that with neutral pH (6.8~7.3) and at 17$^{\circ}C$ storage. But pH values of all conditions were not increased rapidly. Especially acidic and alkalic diluents were more stable in pH after dilution. Conclusively, extender pH and storage temperature was the important factors for sperm viability. The KpA setting up around neutral pH was the optimal boar semen extender for maintaining liquid semen at 17$^{\circ}C$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.501-504
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at 150$^{\circ}C$ ∼ 600$^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1∼1.5MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectrics.

• Bulletin of the Korean Chemical Society
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• v.7 no.2
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• pp.129-136
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• 1986

The dipole moments for some coordination compounds with organic ligands have been calculated adopting the molecuar orbitals obtained from EHT calculation with modified technique. Adopting the molecular orbitals with the modified technique, the calculated dipole moments for all the coordination compounds with organic ligands give closer agreements with experimental values than those using the molecular orbitals obtained from EHT calculation. The calculated dipole moments suggest that $(C_2H_5)_2SO,\;(C_6H_5)_2SO,\;and\;(C_6H_5)_2SeO$ may have a trigonal planar structure and $(C_6H_5)_3AsO,\;and\;(C_6H_5)_3PBCl_3$ a square planar structure and $(C_2H_5)_2OZrCl_4$ may be distorted markedly. This work may also indicate that the modified technique is superior to the EHT calculation as far as the dipole moment calculation is concerned.

• Journal of the Korean Chemical Society
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• v.39 no.3
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• pp.198-203
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• 1995

The Mo(V) $di-\mu-oxo$ type $(Mo_2O_4(H_2O)_2L)$ complexes $(L:\;C_3H_7CH(SCH_2COOH)_2,\;C_6H_5CH(SCH_2COOH)_2,\;CH_3OC_6H_4CH(SCH_2COOH)_2,\;C_5H_{10}C(SCH_2COOH)_2,\;C_3H_7C(CH_3)(SCH_2COOH)_2,\;C_3H_7CH(SCH_2CH_2COOH)_2,\;C_6H_5CH(SCH_2CH_2COOH)_2)$ have been prepared by the reaction of $[Mo_2O_4(H_2O)_6]^{2+}$ with a series of dithiodicarboxy ligands. These complexes are completed by two terminal oxygens arranged trans to one another and each ligand forms a chelate type between two molybdenum. In $Mo_2O_4(H_2O)_2L$, two $H_2O$ coordinated at trans site of terminal oxygens. The prepared complexes have been characterized by elemental analysis, infrared spectra, electronic spectra, and nuclear magnetic resonance spectra. In the potential range -0.00 V to -1.00 V at a scan rate of 20 $mVs^{-1}$, a cathodic peak at -0.50∼-0.58 V (vs. SCE) and an anodic peak at -0.40∼-0.43 V (vs. SCE) have been observed in aquous solution. The ratio of the cathodic to anodic current ($I_{pc}/I_{pa}$) is almost 1, we infer that redox is reversible reaction.

• Journal of Korean Society for Atmospheric Environment
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• v.13 no.1
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• pp.91-98
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• 1997

Y-zeolite and ${\gamma}$-Al$_2$O$_3$ were used as supports on CO and $C_3$H$_{6}$ oxidation for diesel emission control. The catalysts composed of Pd and Pt as active components were wash coated on honeycomb type ceramic substrate. The oxidation of CO and $C_3$H$_{6}$ was carried out over prepared honeycomb in a fixed bed continuous reactor in the temperature range of 20$0^{\circ}C$~50$0^{\circ}C$ and 20,000 GHSV (h$^{-1}$ ). Surface area of Y-zeolite was larger than that of ${\gamma}$-Al$_2$O$_3$ due to channel structure of Y-zeolite. Therefore, high conversion of CO and $C_3$H$_{6}$ could be obtained because of good dispersion of active metals over Y-zeolite. The honeycomb used Y-zeolite as a support showed higher $C_3$H$_{6}$ conversion than that of ${\gamma}$-Al$_2$O$_3$ due to better cracking and isomerization activity of Y-zeolite. PdPt catalyst showed high conversion of CO and $C_3$H$_{6}$ at low temperature region, 20$0^{\circ}C$~30$0^{\circ}C$, for their synergy effects. PdPt/Y-Zeolite catalyst could achieve more than 80％ conversion of $C_3$H$_{6}$ at 30$0^{\circ}C$. The use of Y-zeolite as a support increased CO and $C_3$H$_{6}$ conversion, and decreased SO$_2$ conversion very effectively. Y-zeolite found to have a good adaptability as a support for the diesel emission after treatment system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.526-529
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• 2004

The nematic liquid crysta](NLC) aligning capabilities using a-C:H thin film deposited at the three kinds of rf bias condition were investigated. A high pretilt angle of NLC on low substrate rf bias applied a-C:H thin films was observed and the low pretilt angle of the NLC on high substrate rf bias applied a-C:H thin films was observed. Consequently, the high NLC pretilt angle and the good aligning capabilities of LC alignment by the IB alignment method on the a-C:H thin film deposited at 1 W rf bias condition can be achieved. It is considered that pretilt angle of the NLC may be attributed to substrate rf bias condition and IB energy time. Therefore, LC alignment is affected by topographical structure forming strong IB energy.

• KSBB Journal
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• v.4 no.2
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• pp.65-68
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• 1989

In order to determin the optimum extraction condition for protein in a Chrysalis of Silk Worm, Temperature, Time, and pH variation were conducted in the extraction. N.S.I. and nitrogen contents of the extracts in this condition were identified by Kjeldaha method and a C.H.N. corder. The results were as follows; Crude protein and crude fat contents in the extracts were 23.34% and 15.61%, respectively. N.S.I. values with respect to the temperature variation were 6.7% at 6$0^{\circ}C$, 7.94% at 8$0^{\circ}C$ and 8.67% at 10$0^{\circ}C$ in the condition of pH 4, 1 hr. N.S.I. values in pH variation were 7.94% at pH4, 8.99% at pH6, 9.70% at pH8, 10.19% at pH 10 and 12.16% at pH 12 in the condition of 8$0^{\circ}C$, 1hr. N.S.I. values in extraction time variation were 8.67% in 1hr, 9.23% in 2hr and 9.76% in 3hr in the condition of 10$0^{\circ}C$, pH 4. The tendency of N.S.I. variation in this extration condition was reconfirmed also by a C.H.N. corder.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1006-1011
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• 1999

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4$, $CH_4$ and $B_2H_6$. Microstructures and chemical properties of a-SiC:H films grown with varing the volume ratio of $CH_4$ to $SiH_4$ were characterized with various analysis methods including scanning electron microscopy(SEM), X-ray diffractometry(XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy. X-ray photoelectron spectroscopy(XPS), UV absorption spectroscopy and photoconductivity measurements. While Si:H films grown without $CH_4$ showed amorphous state, the addition of $CH_4$ during deposition enhanced the development of a microcrystalline phase. By introducing C atoms into the film, Si-Si and Si--$\textrm{H}_{n}$ bonds of a -Si:H films were gradually replaced by Si-C, C-C, and Si--$\textrm{C}_{n}\textrm{H}_{m}$ bonds. Consequently, the electrical resistivity and optical bandgap of a-SiC:H films were increased with the C concentration in the film.