• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.3
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• pp.128-132
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• 2004

The perovskite ferroelectric materials of the PZT, SBT and BST series will attract much attention for application to ULSI devices. Among these materials, the BST ($Ba_0.6$$Sr_0.4$/$TiO_3$) is widely considered the most promising for use as an insulator in the capacitors of DRAMS beyond 1 Gbit and high density FRAMS. Especially, BST thin films have a good thermal-chemical stability, insulating effect and variety of Phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the surface characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.8
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• pp.894-900
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• 2006

The electrical characteristics associated with crystal structure changes as a function of La content for $(Pb_{1-x}La_x)(Zr_{0.5}Ti_{0.5})O_3$ thin films were investigated for applications in memory capacitors. Tetragonality of PLZT films decreased with increasing La content. Thin films with La $\geq$ 20 mol% were found to be cubic. Films with La $\geq$ 12 mol% exhibited broader dielectric peaks compared to those of bulk ceramics and behaved as relaxer ferroelectrics. Tetragonal PLZT film with 12 mol% La had a dielectric constant maximum of 1330 at room temperature and a charge storage density of ${\sim}18{\mu}C/cm^2$ at 5 V. Decrease in coercive field and remnant polarization with increase in La content were resulting from less dipolar response caused by the decreased crystal anisotropy. The leakage current densities $<10^{-8}A/cm^2$ up to 5 V bias voltage were observed for the films with La $\geq$ 14 mol%.

• Journal of the Korean Graphic Arts Communication Society
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• v.18 no.1
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• pp.47-58
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• 2000

Transmittances of SiO2 and ZrO2 thin films, made by the electron beam evaporation method, were measured with a spectrophotometer to be used in determining their optical constants and thicknesses in the envelop method. New color glass lenses with high transmittance, which now can be manufactured in the industry, was successfully designed by using these constants. Also the vacuum evaporator could be mechanically corrected with these constants as correction factors.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.261-266
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• 1995

In this study, PZT solutions added impurities of Yttrium acetate were prepared by sol-gel processing and were deposited on Pt/ $SiO_{2}$/Si substrates at 5000 rpm for 20 sec. using spin-coating method. Coated films were annealed at 700-750.deg. C for 30 min. using conventional furnace method. Variations of the crystallographic structure and microstructure of PZT thin films with adding impurities were observed using XRD and SEM, and the electrical properties, such as relative permittivity, tan .delta., hysteresis curves and leakage currents, were measured. As the yttrium contents were increased, the remanent polarization and coercive field were decreased. Variations of remanent polarizations and coercive fields of pure and yttrium doped specimens according to polarization reversal cycles were observed using hysteresis measurement. PZT thin films added $Y^{3+}$ ions were completely crystallized at 750.deg. C. $Y^{3+}$ ions, as donor impurity, substituted Pb.sup 2+/ ions located at A-site of perovskite structure. By substitution of $Y^{3+}$ ions, leakage currents became less by decreasing the space charges. Degradation of remanent polarizations of Yttrium added specimens after fatigue was not observed and coercive fields increased more than those of pure PZT thin films.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.131-136
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• 1999

Yttria stabilized zirconia(YSZ) films were deposited on porous NiO substrates and quartz plates by the thermal CVD using $ZrCl_4, YCl_3$ as precursors, and $O_2$ as a reactive gas at atmospheric pressure. The evaporation temperature of $ZrCl_4$ was varied from $250^{\circ}C$ to $550^{\circ}C$ while the temperatures of $YCl_3$ and the substrate were varied from $1000^{\circ}C$ to $1030^{\circ}C$. As the evaporation temperature of $ZrCl_4$ increased, the deposition rate of $ZrO_2$ decreased, contrary to our expectation. As a result of the decreased deposition rate of $ZrO_2$, the yttria content increase. The high evaporation temperature of $ZrCl_4$ makes the well-faceted crystal while the low evaporation temperature leads to the cauliflower-shaped structure. The dependence of the evaporation temperature on the growth rate and the morphological evolution was interpreted by the charged cluster model.

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.234-239
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• 1999

A Abstract Yttria-stabilized zirconia(YSZ) thin films were synthesized by plasma enhanced chemical vapor deposition process. $Zr[TMHD]_4$ $Y[TMHD]_3$ precursors and oxygen were used with the deposition temperature of $425^{\circ}C$ and rf power ranging 0-100 watt. Effects of the deposition parameters were studied by X-ray diffraction and thickness anal­ysis. YSZ thin films have cubic crystal structure with (200) orientation. From the results of EDX analysis, the converte ed content of TEX>$Y_2O_3$ was determined to be 0-36%, and the film thickness was increased with bubbling temperature which is considered to be due to increasing TEX>$Y_2O_3$ flux. The depth profiles of Zr, Y and 0 appeared relatively $\infty$nstant through film thickness. Columnar grains of $1000~2000\AA$ grew vertical to the substrate surface for the case of Ar carri­er gas. In case of He carrier gas, the grain size was observed to be about $1000~2000\AA$. X-ray diffraction data showed the increase of lattice constant with TEX>$Y_2O_3$ content. It was that the presence of the cracks formed during film deposition, partially released the stress generated by the increase of lattice constant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.258-258
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• 2008

Among several available high-k dielectrics the lanthanum zirconium oxide ($LaZrO_x$) system is very attractive as a buffer insulating layer. Because both lanthanum and zirconium atoms, the constituents of the $LaZrO_x$ thin film, have been considered to be thermally stable in contact with Si. The $LaZrO_x$ films were deposited by a sol-gel method. After the deposition, The $LaZrO_x$ films were crystallized at $750^{\circ}C$ for 30 minutes in $O_2$ ambient. PVDF-TrFE films were deposited on these $LaZrO_x$/Si structures using a sol-gel technique. The sol-gel solution was spin-coated on $LaZrO_x$/Si structures at 500 rpm for 5 sec and 2500 rpm for 15 sec. The deposited layer was dried at $165^{\circ}C$ for 30 min in air on a hot-plate. Then, we deposited Au electrode on PVDF-TrFE films using thermal evaporation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.197-197
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• 2010

Pb(Zr,Ti)O3/BiFeO3/(PZT/BFO) multilayer thin films were coated on Pt/Ti/SiO2/Si substrates by chemical solution deposition. With increasing the annealing temperature, the dielectric and leakage current density properties of multilayered PZT/BFO/PZT thin films were improved. The current density of the PZT/BFO/PZT filmannealing at $600^{\circ}C$ was about 189.39(x10-9A/cm2) at 10V. The relative dielectric constant and the dielectric loss of the PZT/BFO/PZT thin film annealing at $600^{\circ}C$ were about 318 and 0.161%, respectively.

• Journal of Surface Science and Engineering
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• v.30 no.3
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• pp.183-190
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• 1997

Fabrication and crystallization characteristics of yttria($T_2O_3$) stabilized zirconia(YSZ) thin film by sol-gel process were studied. YSZ sol was synthesized with zirconium n-propoxide($Zr(OC_3H_7)_4)$) and yttrium nitrate pentahydrate ($Y(NO_3)_3.5H_2O$). YSZ film was prepared by depositing the polymeric sol on porous $Al_2O_3$ substrate by spin-coating, and the film characteristics were investigated by FRIR, TG-DTA, XRD, DSC, optical microscopy and SEM. The film topology was uniform and cracks were not found. It was found that the annealing temperature and the concentration of stabilizer affect the crystallization of YSZ film. The YSZ film began to crystallize from amorphous to tetragonal phase at 40$0^{\circ}C$, and it was not converted to cubic structure until $1100^{\circ}C$. It seemed that the grains were formed over $700^{\circ}C$and the average grain size was obtained about 0.2$\mu\textrm{m}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.184-189
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• 2002

The electrical and optical properties of $(Pb_{0.91}La_{0.09})(Zr_{0.65}Ti_{0.35})O_3$(PLZT) thin films by MOCVD using ultrasonic spraying were investigated. To compensate the Pb loss by evaporation, 5 and 10 wt% of excess Pb was added to 0.2 M precursor. After deposition of films on ITO-coated glasses in oxygen atmosphere for 30 min, films were heated by in-situ RTA (rapid thermal annealing) method. When the films were heat treated at $600^{\circ}C$, perovskite single phase was obtained. The optical property of the film with 10 wt% excess Pb was excellent showing about 84 % of transmittance near 520 nm. The dielectric constant of the film was about 308 and the leakage current of the film was lower than the Pb excess 0, 5 wt% PLZT thin films.