• Bulletin of the Korean Chemical Society
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• 제35권12호
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• pp.3601-3608
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• 2014

RGB light emitting ZnSe based nanocrystals: ZnSe (blue), ZnSe:Cu (green) and ZnSe:Mn (red) were synthesized by capping the surface of the nanocrystals with oleic acid. The obtained nanocrystal powders were characterized by using XRD, HR-TEM, ICP-AES, FT-IR, and FT-Raman spectroscopies. The optical properties were also measured by UV/Vis and photoluminescence (PL) spectroscopies. The PL spectra showed broad emission peaks at 471 nm (ZnSe), 530 nm (ZnSe:Cu) and 665 nm (ZnSe:Mn), with relative PL efficiencies in the range of 0.7% to 5.1% compared to a reference organic dye standard. The measured average particle sizes from the HR-TEM images for those three nanocrystals were 4.5 nm on average, which were also supported well by the Debye-Scherrer calculations. The elemental compositions of the ZnSe based nanocrystals were determined by ICP-AES analyses. Finally, the drawn CIE diagram showed the color coordinates of (0.15, 0.16) for ZnSe, (0.22, 0.57) for ZnSe:Cu, and (0.62, 0.35) for ZnSe:Mn respectively, which were fairly well matched to that of the RGB color standards.

• 한국재료학회지
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• 제7권10호
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• pp.914-918
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• 1997

MBS에 의해(001)GaAs기판 위에 성장된 Zn$_{1-x}$Co$_{x}$Se(x=1.0, 7.4, 9.5 %)반도체 박막과 (ZnSe/FeSe)반도체 초격자 박막의 미세구조를 투과전자현미경을 이용하여 연구하였다. Zn$_{1-x}$Co$_{x}$Se 박막 시편의 경우, 박막과 기판 사이의 격자 불일치때문에 a/2<110>형태의 버거즈 벡터를 가지는 부정합 전위를 관찰하였다. 모든 Zn$_{1-x}$Co$_{x}$Se 박막과 기판의 계면은 뚜렷이 구별되었고, 계면에서 산화물이나 이물질이 존재하지 않았다. 또한, (ZnSe/FeSe)초격자를 성장시키기 전에 GaAs기판 위에 ZnSe바닥층을 넣음으로써 고품질의 (ZnSe/FeSe)초격자를 얻었다. (ZnSe/FeSe)초격자에 있는 FeSe는 섬아연광 결정구조로 존재하였다.

• Applied Microscopy
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• 제27권3호
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• pp.235-241
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• 1997

(001) GaAs 기판 위에 성장된 (ZnSe/FeSe) 초격자의 구성층 사이에 상호확산으로 형성된 $Zn_{1-x}Fe_xSe$ 의 미세구조가 고분해능 투과전자현미경과 컴퓨터 이미지 시뮬레이션에 의해 연구되었다. 컴퓨터 이미지 시뮬레이션은 multislice 방법으로 여러 시편 두께와 초점 거리에서 실시되었다. 컴퓨터 시뮬레이션에 의해 얻은 이미지는 실험에 의해 얻은 이미지와 비교되었다. 또한, CuAu-I 형태 규칙화가 $Zn_{1-x}Fe_xSe$ 상호화산층에서 일어났다. 이 CuAu-I 형태 규칙격자는 <100>과 <110> 방향에 따라서 ZnSe와 FeSe 층이 교대로 구성되어 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.120-121
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• 2009

Single crystalline $ZnIn_2Se_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating, $ZnIn_2Se_4$ source at $630^{\circ}C$. After the as-grown $ZnIn_2Se_4$ single crystalline thin films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of $ZnIn_2Se_4$single crystalline thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $ZnIn_2Se_4$ single crystalline thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2Se_4$/GaAs did not form the native defects because In in $ZnIn_2Se_4$ single crystalline thin films existed in the form of stable bonds.

• 공업화학
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• 제22권3호
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• pp.328-331
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• 2011

ZnSe 양자점을 AOT 마이크로에멀전을 이용해서 제조하였으며, tetraethyl orthosilicate (TEOS)를 직접 주입하는 방법으로 실리카에 담지된 ZnSe 양자점 소재를 얻었다. 양자점이 실리카에 담지되었을 때, 상대적으로 고른 구 형태의 ZnSe 양자점을 얻을 수 있었고 그 크기는 약 7 nm이었다. 아울러 마이크로에멀전상의 ZnSe 양자점이 실리카에 담지되면 photoluminescence 효율은 8%에서 1.1%로 감소하였다. 그러나 금표면에 실리카에 담지된 ZnSe 고체 박막을 형성시켰을 때, 양자점의 광학안정성은 크게 증가함을 알 수 있었다. 특히 ZnSe 양자점은 카드뮴이 없어 독성이 작으며 기존의 ZnSe 제조 시 Se 전구체로 사용하는 맹독성의 $H_2Se$ 가스나 높은 반응 온도를 필요로 하지 않는다. 따라서 바이오센서용 등으로 사용이 가능한 실리카에 담지된 ZnSe 양자점을 안전하고 경제적인 방법으로 생산할 수 있는 방법을 제시할 수 있었다.

• 한국결정성장학회지
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• 제8권2호
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• pp.263-268
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• 1998

기상 결정 성장법을 이용하여 twin, grain free인 (100) ZnSe 결정을 성장하였다. (100) ZnSe 결정내의 결함은 X-ray Rocking Curve에 의해 분석하였으며, seed의 질과 성장 속도가 ZnSe 결정의 결함에 가장 큰 영향을 미쳤다. 성장된 (100) ZnSe 결정의 형태는 seed의 모양과 로내의 등온 곡선 및 면들의 성장속도에 의존하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권9호
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• pp.434-437
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• 2001

ZnSe, ZnSe:Ho/sup 3+/, Mg/sub x/Zn/sub 1-x/Se and Mg/sub x/Zn/sub 1-x/Se:Ho/sup 3+/ crystals were grown by the chemical transport reaction method. The crystal structures and optical energy band gaps of the single crystals were investigated. Their photoluminescence(PL) spectra were measured at 10 [K]. Sharp emission peaks in the blue-green wavelength range and broad emission peaks in the yellow-red wavelength range were observed. The single crystals doped with 1.0 [mol%] of holmium did not show the sharp emission peaks because of defects which were thought to be originated to the holmium dopant.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.84-84
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, I$_2$ (D$^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3meV The exciton peak, lid, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The I$_1$$\^$d/ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a (V$\sub$se/ - V$\sub$zn/) - V$\sub$zn-/

• 한국결정성장학회지
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• 제13권3호
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• pp.105-110
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_{2}$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV, The exciton peak, $I_{1}^{d}$ at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_{1}^{d}$ peak was dominantly observed in the ZnSe/GaAs : Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs : Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{se}-V_{zn})-V_{zn}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.120-123
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_2$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV. The exciton peak, $I_1^d$, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_1^d$ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{Se}-V_{Zn})-V_{Zn}$.