• Proceedings of the Optical Society of Korea Conference
• /
• 1995.06a
• /
• pp.75-83
• /
• 1995

In-situ, 실시간 측정을 위해 상업화 모형의 He-Ne 타원해석기 및 고속 분광 타원해석기(SE, Spectoscopic Ellipsometer)를 제작하였다. 후자의 경우 1024개의 화소를 가진 광학 다채널분석기 (OMA, Optical Multichannel Analyzer)를 이용한 RP형 분광타원해석기로써 1.5∼5.0eV의 측정 파장대역을 가지며, 한 스펙트럼의 측정시간은 약 100msec이다. cos 와 tanΨ의 정확도는 각각 약0.01이하로 측정되었다. 이러한 in-situ 타원해석기들을 사용하여 Au, ZnS 박막들의 성장 초기단계에서의 박막구조의 변화, 성장속도 그리고 HF식각후의 Si 자연산화층(SiO2)의 초기 성장과정을 밝히고 SiO2/c-Si 시료의 온도를 비 접촉적, 비간석적으로 기존의 방법에 의한 결과와 비교하였다.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1297-1298
• /
• 2006

Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have been attracted recently attention due to their highdevice performance expected from theoretical simulations among nanowire-based FETs with other gate geometries. OSG FETs with the channels of ZnO nanowires were successfully fabricated in this study with photolithographic processes. In the OSG FETs fabricated on oxidized Si substrates, the channels of ZnO nanowires with diameters of about 60 nm are coated surroundingly by $Al_{2}O_{3}$ as gate dielectrics with atomic layer deposition. About 80 % of the surfaces of the nanowires coated with $Al_{2}O_{3}$ is covered with gate metal to form OSG FETs. A representative OSG FET fabricated in this study exhibits a mobility of 98.9 $cm^{2}/Vs$, a peak transconductance of 0.4 ${\mu}S$, and an Ion/Ioff ratio of $10^6$ the value of the Ion/Ioff ratio obtained from this OSG FET is the highest among nanowire-based FETs, to our knowledge. Its mobility, peak transconductance, and Ion/Ioff ratio arc remarkably enhanced by 11.5, 32, and $10^6$ times, respectively, compared with a back-gate FET with the same ZnO nanowire channel as utilized in the OSG FET.

• Applied Chemistry for Engineering
• /
• v.28 no.1
• /
• pp.1-7
• /
• 2017

Polydimethylsiloxane (PDMS) can be deposited on various substrates using chemical vapor deposition process, which results in the formation of PDMS thin films with thickness below 5 nm. PDMS layers can be evenly deposited on surfaces of nanoparticles composed of various chemical compositions such as $SiO_2$, $TiO_2$, ZnO, C, Ni, and NiO, and the PDMS-coated surface becomes completely hydrophobic. These hydrophobic layers are highly resistant towards degradation under acidic and basic environments and UV-exposures. Nanoparticles coated with PDMS can be used in various environmental applications: hydrophobic silica nanoparticles can selectively interact with oil from oil/water mixture, suppressing fast diffusion of spill-oil on water and allowing more facile physical separation of spill-oil from the water. Upon heat-treatments of PDMS-coated $TiO_2$ under vacuum conditions, $TiO_2$ surface becomes completely hydrophilic, accompanying formation oxygen vacancies responsible for visible-light absorption. The post-annealed $PDMS-TiO_2$ shows enhanced photocatalytic activity with respect to the bare $TiO_2$ for decomposition of organic dyes in water under visible light illumination. We show that the simple PDMS-coating process presented here can be useful in a variety of field of environmental science and technology.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2016.11a
• /
• pp.120-120
• /
• 2016

Ti-6Al-4V alloy have been used for dental implant because of its excellent biocompatibility, corrosion resistance, and mechanical properties. However, the integration of such implant in bone was not in good condition to achieve improved osseointergraiton. For solving this problem, calcium phosphate (CaP) has been applied as coating materials on Ti alloy implants for hard tissue applications because its chemical similarity to the inorganic component of human bone, capability of conducting bone formation and strong affinity to the surrounding bone tissue. Various metallic elements, such as strontium (Sr), magnesium (Mg), zinc (Zn), sodium (Na), silicon (Si), silver (Ag), and yttrium (Y) are known to play an important role in the bone formation and also affect bone mineral characteristics, such as crystallinity, degradation behavior, and mechanical properties. Especially, Zn is essential for the growth of the human and Zn coating has a major impact on the improvement of corrosion resistance. Plasma electrolytic oxidation (PEO) is a promising technology to produce porous and firmly adherent inorganic Zn containing $TiO_2(Zn-TiO_2)$coatings on Ti surface, and the a mount of Zn introduced in to the coatings can be optimized by altering the electrolyte composition. In this study, corrosion behavior of Ti-6Al-4V alloy after plasma electrolytic oxidation in solutions containing Ca, P and Zn were studied by scanning electron microscopy (SEM), AC impedance, and potentiodynamic polarization test. A series of $Zn-TiO_2$ coatings are produced on Ti dental implant using PEO, with the substitution degree, respectively, at 0, 5, 10 and 20%. The potentiodynamic polarization and AC impedance tests for corrosion behaviors were carried out in 0.9% NaCl solution at similar body temperature using a potentiostat with a scan rate of 1.67mV/s and potential range from -1500mV to +2000mV. Also, AC impedance was performed at frequencies ranging from 10MHz to 100kHz for corrosion resistance.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.180-180
• /
• 2015

Solution processed Resistive random access memory (ReRAM)은 간단한 공정 과정, 고집적도, 저렴한 가격, 대면적화 플라즈마 데미지 최소화 등의 장점으로 차세대 비휘발성 메모리로 써 많은 관심을 받고 있으며, 주로 high-k 물질인 HfOx, TiOx, ZnO 가 이용 된다. IGZO와 ZTO와 같은 산화물 반도체는 높은 이동도, 대면적화, 넓은 밴드갭으로 인하여 투명한 장점으로 LCDs (Liquid crystal displays)에 이용 가능하며, 최근에는 IGZO와 ZTO에서 Resistive Switching (RS) 특성을 확인한 논문이 보고되면서 IGZO와 ZTO를 ReRAM의 switching medium와 TFT의 active material로써 동시에 활용하는 것에 많은 관심을 받고 있다. 이와 같은 산화물 반도체는 flat panel display 회로에 TFT와 ReRAM의 active layer로써 집적가능 하며 systems-on-panels (SOP)에 적용 가능하다. 하지만 IGZO 보다는 ZTO가 In과 Ga을 포함하지 않기 때문에 저렴하다. 그러므로 IGZO를 대신하는 물질로 ZTO가 각광 받고 있다. 본 실험에서는 ZTO film에 Al을 doping하여 메모리 특성을 평가하였다. 실험 방법으로는 p-type Si에 습식산화를 통하여 SiO2를 300 nm 성장시킨 기판을 사용하였다. 그리고 Electron beam evaporator를 이용하여 Ti를 10 nm, Pt를 100 nm 증착 한다. 용액은 Zn와 Tin의 비율을 1:1로 고정한 후 Al의 비율을 0, 0.1, 0.2의 비율로 용액을 각각 제작하였다. 이 용액을 이용하여 Pt 위에 spin coating방법을 이용하여 1000 rpm 10초, 6000 rpm 30초의 조건으로 AZTO (Al-ZnO-Tin-Oxide) 박막을 증착한 뒤, solvent 및 불순물 제거를 위하여 $250^{\circ}C$의 온도로 30분 동안 열처리를 진행하였다. 이후 Electron beam evaporator를 이용하여 top electrode인 Ti를 100 nm 증착하였다. 제작된 메모리의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과, AZTO (0:1:1, 0.1:1:1, 0.2:1:1)를 이용하여 제작한 ReRAM에서 RS특성을 얻었으며 104 s이상의 신뢰성 있는 data retention특성을 확인하였다. 그리고 Al의 비율이 증가할수록 on/off ratio가 증가하고 endurance 특성이 향상되는 것을 확인하였다. 결론적으로 Al을 doping함으로써 ZTO film의 메모리 특성을 향상 시켰으며 AZTO film을 메모리와 트랜지스터의 active layer로써 활용 가능할 것으로 기대된다.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.6
• /
• pp.328-332
• /
• 2014

Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.30 no.4
• /
• pp.136-142
• /
• 2020

Crystallization of zinc crystalline glaze requires demanding conditions such as the formation of a nucleating agent and the amount of nucleating agent, and growth of crystalline. Zinc crystalline glaze is hard to utilize in the industry because of its narrow range of the firing temperature, and the crystallization's dependency on the quality of zinc. Stimulation of zinc crystallization and formation of frit enable zinc crystalline glaze to be reconstituted in a various range of firing schedules, leading to the development of a competitive industrial glaze.

• Korean Journal of Materials Research
• /
• v.4 no.6
• /
• pp.611-619
• /
• 1994

The formation of , $\beta$-quartz solid solution in the $LiO_2-Al_2O_3-SiO_2$glasses containing $TiO_{2}$ and $ZrO_{2}$ as nucleating agents was investigated for various temperatures and times. Linear thermal expansion coefficients of base glasses and crystallized glasses were $45\sim 55 \times 10^{-7} \textrm{cm}/^{\circ}C$ and $ -8\sim +8 \times 10^{-7}\textrm{cm}/^{\circ}C$ ($25^{\circ}C \sim 525^{\circ}C$), respectively. The crystal phase formed by heat-treatment below $900^{\circ}C$was , $\beta$--quartz solid solution, and the crystal sizes were less than 0.21m. On the other hand, the crystal size of the base glasses containing 3.5 wt% MgO is relatively uniform and is independent with temperature. The specimen containing 3.5 wt% ZnO shows a minimum crystal size(O.l8$\mu \textrm{m}$), and it strongly depends on temperature of heat-treatment.

• Journal of the Korean Magnetics Society
• /
• v.11 no.6
• /
• pp.256-261
• /
• 2001

These experiments were carried out to examine the effects of element substitution of Zn and La-Zn for Sr-ferrite. The calcined properties of Zn and La-Zn element substitution were examined, and also the sintered magnetic properties were compared with the stoichiometric condition. The magnetization properties of calcined SrM materials is as follows; M$\_$s/ : 61.06 emu/g. Also, the magnetization properties of calcined Zn$\_$0.3/-SrM materials is as follows; M$\_$s/ : 66.90 emu/g. The sintered magnetic properties of (La-Zn)$\_$0.3/-SrM composition is as follows; B$\_$r/ : 4.21 kG, BH$\_$max/: 4.19 MGOe.

• Horticultural Science & Technology
• /
• v.31 no.5
• /
• pp.544-551
• /
• 2013

The effect of different silicon (Si) sources and methods of application on the growth of two chrysanthemum cultivars grown in a soilless substrate was investigated. Rooted terminal cuttings of Dendranthema grandiflorum 'Lemmon Eye' and 'Pink Eye' were transplanted into pots containing a coir-based substrate. A nutrient solution containing 0 or $50mg{\cdot}L^{-1}$ Si from calcium silicate ($CaSiO_3$), potassium silicate ($K_2SiO_3$) or sodium silicate ($Na_2SiO_3$) was supplied once a day through an ebb-and-flood sub irrigation system. A foliar spray of 0 or $50mg{\cdot}L^{-1}$ Si was applied twice a week. Cultivar and application method had a significant effect on plant height. Cultivar, application method, and Si source had a significant effect on plant width. Of the three Si sources studied, $K_2SiO_3$ was found to be the best for the increasing number of flowers, followed by $CaSiO_3$ and $Na_2SiO_3$. In both the cultivars, sub irrigational supply of Si developed necrotic lesions in the older leaves at the beginning of the flowering stage as compared to the control and foliar spray of Si. Cultivar, application method, Si source, and their interactions had significant influence on leaf tissue concentrations of calcium (Ca), potassium (K), phosphorus (P), magnesium (Mg), sulfur (S), sodium (Na), boron (B), iron (Fe), and zinc (Zn). The addition of Si to the nutrient solution decreased leaf tissue concentrations of Ca, Mg, S, Na, B, Cu, Fe, and Mn in both cultivars. The greatest Si concentration in leaf tissue was found in 'Lemmon Eye' ($1420{\mu}g{\cdot}g^{-1}$) and 'Pink Eye' ($1683{\mu}g{\cdot}g^{-1}$) when $K_2SiO_3$ was applied through a sub irrigation system and by foliar spray, respectively.