• BMB Reports
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• v.31 no.1
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• pp.25-30
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• 1998

Kinetic studies of L-Alanine dehydrogenase from Bacillus subtilis-catalyzed reactions in the presence of $Zn^{2+}$ were carried out. The substrate (L-alanine) saturation curve is hyperbolic in the absence of the metal ion but it becomes sigmoidal when $Zn^{2+}$ is added to the reaction mixture indicating the positive cooperative binding of the substrate in the presence of zinc ion. The cooperativity of substrate binding depends on the xinc ion concentration: the Hill coefficients ($n_H$) varied from 1.0 to 1.95 when the zinc ion concentration varied from 0 to $60\;{\mu}m$. The inhibition of AlaDH by $Zn^{2+}$ is reversible and noncompetitive with respect to $NAD^+$ ($K_i\;=\;5.28{\times}10^{-5}\;M$). $Zn^{2+}$ itself binds to AlaDH with positive cooperativity and the cooperativity is independent of substrate concentration. The Hill coefficients of substrate biding in the presence of $Zn^{2+}$ are not affected by the enzyme concentration indicating that $Zn^{2+}$ binding does not change the polymerization-depolymerization equilibria of the enzyme. Among other metal ions, $Zn^{2+}$ appears to be a specific reversible inhibitor inducing conformational change through the intersubunit interaction. These results indicate that $Zn^{2+}$ is an allosteric competitive inhibitor and substrate being a non-cooperative per se, excludes the $Zn^{2+}$ from its binding site and thus exhibits positive cooperativity. The allosteric mechanism of AlaDh from Bacillus subtilis is consistent with both MWC and Koshland's allosteric model.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1283-1285
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• 1997

In this paper, structural, optical and electrical properties of $Cd_{1-x}Zn_xS$ thin films prepared by co-evaporation method were studied. The crystal structure of $Cd_{1-x}Zn_xS$ films deposited at a substrate temperature of $150^{\circ}C$ was hexagonal with the c axis aligned perpendicular to the substrate. As increasing composition parameter x, the intensity of (002) peak decreased, which means poor crystalline and decreasing of preferential orientation. The optical bandgap of $Cd_{1-x}Zn_xS$ films varies from 2.41eV for CdS to 3.48eV for ZnS with x. The resistivity of the $Cd_{1-x}Zn_xS$ films increased with x.

• Applied Microscopy
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• v.25 no.3
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• pp.75-81
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• 1995

The microstructural characterization of ternary $ZnS_{x}Se_{1-x}$(x=0.085) on GaAs(001) substrate grown up to $2{\mu}m\;at\;300^{\circ}C$ by molecular beam epitaxy(MBE) which has a single growth chamber was investigated by high resolution transmission electron microscope (HRTEM) working at 300 kV with point resolution of 0.18nm. The interface in the ZnSSe/GaAs specimen maintains a pseudomorphism with the substrate, but the epilayer has high density of stacking faults and moire fringes. The pits which had formed along <111> direction were found at the interface of ZnSSe/GaAs. The pits were responsible for producing defects in both epilayer and substrate. The wavy interface which has the difference of 15nm in height was found to maintain the pseudomorphism with the substrate and no stacking faults were found around the interface. However there exists faint and fine moire fringes in the epilayer near interface.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.358-364
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• 2009

We investigated the growth of ZnO thin films with prominent emission characteristics through minimizing the formation of defects by using pulsed laser deposition (PLD). To do so, the ZnO films were deposited on sapphire(0001) substrates at the substrate temperature of $400-850^{\circ}C$ and then the variation of their structural and optical properties were analyzed by x-ray diffraction, atomic force microscope and photoluminescence. As a result, all ZnO films were grown with c-axis preferential orientation irrespective of the substrate temperature. However, the crystallinity and stress state were dependent on the substrate temperature and the ZnO film deposited at $600^{\circ}C$ showed the best surface morphology and crystallinity with nearly no strain. And also this film exhibited outstanding emission characteristics from the viewpoint of full width half maximum of UV emission peak as well as visible emission due to defects. These results indicate that the emission characteristics of the ZnO films are strongly related to their structural characteristics influenced by substrate temperature. Consequently, ZnO films with strong UV emission and nearly no visible emission, which are applicable to UV emission devices, could be grown at the substrate temperature of $600^{\circ}C$ by PLD.

• Journal of the Korean institute of surface engineering
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• v.28 no.6
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• pp.386-392
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• 1995

The RF planar magnetron sputtering technique was used to fabricate uniform ZnO/$SiO_2$/Si thin films at high growth rate. A detailed crystallographic character of these thin films has been carried oct using XRD, XRC, and SEM. These thin films have the configuration of c-axis orientation perpendicular to $SiO_2$/ Si substrate. The dependence of the thickness of ZnO/$SiO_2$/Si films on applied RF power parameters was also investigated. The crystallinity of films was improved as the substrate temperature was high, RF input power increased, and Ar/$O_2$ ratio decreased. Also, most of ZnO films fabricated on $SiO_2$/Si were suitable for SAW filter since a standard deviation of XRC (002) peak was less than $6^{\circ}$. The presence of the $SiO_2$ layer has a beneficial effect on the crystalline quality of the grown ZnO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering(FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of $O_2$ gas and substrate temperature. When the $O_2$ gas rate of 0.3 and substrate temperature $200^{\circ}C$, ZnO:Al thin film had strongly oriented c-axis and lower resistivity( < $10^{-4}{\Omega}-cm$ ).

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.126.2-126.2
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• 2011

ZnS thin films were deposited with the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. With the increase in the deposition temperature and the decrease in the radio frequency sputtering power, the crystallinity was increased and the surface roughness was decreased, which lead to the decrease in the electrical resistivity of the film. It is also clearly observed that, the intensity of the (111) XRD peak increases with increasing the substrate temperature. On the other hand, as seen in the FWHM decreased with increasing the substrate temperature. Since the FWHM of the (111) diffraction peak is inversely properties to the grain size of the film, then grain size of ZnS thin film increases with increasing the substrate temperature. The electrical resistivity and optical transmittance of the ZnS film as a function of the post-annealing temperature. It can be seen that with the annealing temperature set at $400^{\circ}C$, the resistivity decreases to a minimum value of $2.1{\times}10^{-3}\;{\Omega}cm$ and the transmittance increases to a maximum value of 80% of the ZnS film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.108-111
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• 2000

The Zns thin films were deposited on non-alkali glass substrate by the Hot Wall method. The thin films grown at various evaporation cell and substrate temperature were characterized by spectrophotometer and X-ray diffraction to investigate the optical and structural characteristics. The deposition rates were increased with increasing the cell temperature, and were decreased with increasing substrate. The optical characteristics of thin films depends on the deposition rates. The band gap energies measured at room temperature with 3.4~3.5eV are smaller than the theoretical value of 3.54eV. All ZnS thin films are oriented in (111) of the principal direction of a zincblende structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.160-162
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• 2003

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The substrate temperatures was $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}\;and\;299\;cm^2V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T\;+\;463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$, Vo, $Zn_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type.

• Korean Journal of Crystallography
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• v.7 no.2
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• pp.175-182
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• 1996

ZnO thin films were deposited on Corning 7059 glass substrates to study fundamental properties of films. According to the experimental results, (002) preferred ZnO thin films were grown by purging Ar/O2 mixed gas, but not without oxygen gas. The structure and the orientation of ZnO thin films were much affected by the substrate temperature and rf power. High quality ZnO films were obtained by increasing their values. Optimum deposition parameters were : 300W rf power, 300℃ substrate temperature, Ar/O2=70/30. To characterize SAW propagation properties, IDT was fabricated by etching Al films deposited on diamond/Si wafer with RIE. Measured λ(wavelength) was 24μm and experimental results were well matched with simulation. Center frequency was 250MHz, and the calculated phase velocity of ZnO/ diamond structure was about 6000m/s.