• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.428-428
• /
• 2013

Red color light emitting diodes were fabricated using CdSe/CdS/ZnS quantum dots (QDs). Patterned indium-tin-oxide (ITO) was used as a transparent anode, and oxygen plasma treatment on a surface of ITO was performed. Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was spin coated on the ITO surface as a hole injection layer. Then CdSe/CdS/ZnS QDs was spin coated and thermal treatment was performed for the cross-linking of QDs. TiO2 was coated on the QDs as an electron transport layer, and 150 nm of aluminum cathode was formed using thermal evaporator and shadow mask. The device shows a pure red color emission at 606 nm wavelength. Device characteristics will be presented in detail.

• Transactions of the Korean hydrogen and new energy society
• /
• v.33 no.1
• /
• pp.113-120
• /
• 2022

Quantum dots (QDs) are attractive photosensitizer candidates for application not only in solar cells but also in solar hydrogen generation. For the prepartion of highly efficient QD-sensitized photoelectrodes, it is important to reduce electron recombination at the photoanode/electrolyte interface. Here, we study on the coating condition of ZnS passivation layers on the photoanodes in QD-sensitized solar cells (QDSCs). The ZnS passivation layers are coated by successive ionic layer adsorption and reaction method, and as the cation precursor, zinc acetate and zinc nitrate are empolyed. Due to the higher pH of cation precursor solution, the ZnS loading is improved when the zinc acetate is used, compared to the zinc nitrate. This improved loading of ZnS leads to the reduced electron recombination at the surface of photoanodes and the enhaced conversion efficiency of QDSCs from 6.07% to 7.45%.

• Clean Technology
• /
• v.16 no.4
• /
• pp.292-296
• /
• 2010

We fabricated quantum dot sensitized solar cells(QDSSC) using PbS as a sensitizer and measured the solar energy conversion efficiency. After growing ZnO nanowires on the substrate by low temperature ammonia solution reaction, PbS QDs were deposited on ZnO nanowires by SILAR(Successive ionic layer adsorption and reaction) method. The morphology and crystallinity of PbS/ZnO nanowires were studied by SEM and XRD. In this study, the maximum conversion efficiency of QDSSC using PbS was 0.075% at one sun, which was lower than that of QDSSC using other sensitizers. The reasons it showed relatively low efficiency are i) the probability of type-I band gap arrangement between ZnO and PbS, ii) disturbance of electron migration by the various-sized PbS band gap, iii) stability dip by the chemical reaction of PbS QDs with electrolyte. To solve these problems, researches about controlling the size distribution of PbS and new type electrolyte would be needed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.7
• /
• pp.443-449
• /
• 2018

We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperature-dependent photoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks, thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of band-gap shifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversible photoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelled InZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.

• Korean Chemical Engineering Research
• /
• v.46 no.6
• /
• pp.1081-1086
• /
• 2008

QDs-LEDs(quantum dot light emitting device) should contain well-organized arrays of QDs on an electron transport layer. Thin films of CdSe/ZnS core-shell QDs were successfully fabricated on $TiO_2$ substrates by using PDMS stamp and micro contact printing method. 2-Carboxyethylphosphonic acid(CAPO) and 1,6-hexanedithiol(HDT) were employed as molecular linkers in assembling CdSe/ZnS core-shell QDs with high-density and uniform array. The CAPO increased the binding strength between the QDs and the substrates, and the HDT induced the strong inter-particle attractions of assembled QDs. The assembling properties of QDs thin films were characterized by SEM, AFM, optical microscope and photoluminescence spectroscope(PL).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.417-417
• /
• 2012

For desired optical properties of QDs, it is very important to reduce the presence of defects on their surfaces. Passivation of surface defects using larger band gap materials is the most effective way. Some groups successfully synthesized Cd based multi-shell structured quantum dots and improved its optical properties. However, its productivity has limit because of the amounts of glass ware and space. In this research, we try to synthesize Cd based multi-shell structured nanocrystal quantum dots to overcome demerits of conventional batch synthetic method. This reactor composed pump, SUS reaction part (3.2 mm stainless steel and furnace) and batch mixer. We successively synthesized CdSe/CdS/ZnS quantum dot at this reactor in one step.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.384-384
• /
• 2011

양자점 감응형 태양전지는 염료감응형 태양전지와 비슷한 구조를 가지지만, 유기물 염료를 대신하여 무기물 양자점을 사용함으로서 기존 유기물 염료가 가지는 한계점을 극복할 수 있다. 양자점을 광감응 염료로 사용하는 경우 양자제한효과(quantum confinement effect)에 의해 양자점의 사이즈조절만으로 밴드갭을 조절할 수 있어 광학적 특성 조절이 용이하며, 유기물 염료보다 광흡수 능력도 뛰어나다. 더불어, 하나의 광자를 흡수하여 두개 이상의 전자-정공쌍을 만들 수 있는(multiple exciton generation) 가능성이 있어 기존 태양전지가 가지는 이론적 한계효율(Shockley-Queisser limit)을 뛰어넘을 수 있다. 본 연구에서는 고효율의 양자점 감응형 태양전지 개발을 위해, ZnO 나노선 구조에 CdS, CdSe 양자점을 증착한 CdSe/CdS/ZnO 나노선 헤테로구조를 수열합성법으로 합성하였다. 증착한 CdSe/CdS 양자점이 태양광의 가시광 전 영역을 흡수하여 전자-정공을 생성하며, 세 물질 간의 밴드구조를 통해 양자점에서 생성된 전자가 ZnO 나노선으로 포집되고, 바닥전극으로 직접연결이 되어있는 1차원의 나노선 구조를 통해 전자를 효율적으로 운반할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.370-370
• /
• 2011

ZnO 나노 라드 위에 Quantum dot을 형성하고 최종적으로 TiO2를 Atomic Layer Deposition방법으로 증착하여, 그 passivation 효과가 solar cell의 효율에 미친 영향에 대한 실험을 진행하였다. 암모니아 솔루션을 이용한 Hydrothermal 방법으로 수직한 1차원 형태의 ZnO 나노라드를 TCO 기판 위에 성장시킨다. 여기에 잘 알려진 SILAR와 CBD 방법으로 CdS, CdSe 양자점을 증착한다. 그리고 amorphous TiO2로 표면을 덮는 과정을 거치는데, TiO2가 좁은 간격으로 형성된 ZnO라드 구조 위에서 균일하고 정밀하게 증착되도록 하기 위해 Atomic Layer Deposition을 이용하였다. 사용된 precursor는 Titanium isopropoxide와 H2O이며, 실험상에서 0~5 nm 두께의 TiO2 박막을 형성해 보았다. 다양한 분석 방법을 통해 TiO2/QDs/ZnO의 shell-shell-core 구조를 조사했다. (Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), and X-ray Photoelectron Spectroscopy (XPS)). 이를 solar cell에 적용하고 I-V curve를 통해 그 효율을 확인하였으며, Electrochemical Impedance Spectroscopy (EIS)를 통해서 재결합 측면에서 나타나는 변화 양상을 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.1
• /
• pp.42-47
• /
• 2017

In this study, the physical and optical properties of $ZnS:Mn^{2+}$ Quantum Dot prepared by wet-process condition with Mn/Zn ratio was valuated. The powder characteristics and optical behavior were investigated through XRD, TEM and Photo spectrometer exicted by various UV light source. We found the main peak of ZnS (111) was shifted by 0.8 degree to low angle position with increasing stirring energy from 200 RPM to 600 RPM, which is thought to be the increase of lattice defects during wet process. The photo luminescence at 600 RPM shows also higher blue intensity which is well correlated with XRD results. With increasing Mn/Zn ratio, the PL intensity become higher and shifed by 8.5nm to right side, by the increment of substitutional $Mn^{2+}$ ions.

• Korean Journal of Materials Research
• /
• v.30 no.8
• /
• pp.421-425
• /
• 2020

A transparent quantum dot (QD)-based light-emitting diode (LED) with silver nanowire (Ag NW) and indium-tin oxide (ITO) hybrid electrode is demonstrated. The device consists of an Ag NW-ITO hybrid cathode (-), zinc oxide, poly (9-vinylcarbazole) (PVK), CdSe/CdZnS QD, tungsten trioxide, and ITO anode (+). The device shows pure green-color emission peaking at 548 nm, with a narrow spectral half width of 43 nm. Devices with hybrid cathodes show better performances, including higher luminance with higher current density, and lower threshold voltage of 5 V, compared with the reference device with a pure Ag NW cathode. It is worth noting that our transparent device with hybrid cathode exhibits a lifetime 9,300 seconds longer than that of a device with Ag NW cathode. This is the reason that the ITO overlayer can protect against oxidization of Ag NW, and the Ag NW underlayer can reduce the junction resistance and spread the current efficiently. The hybrid cathode for our transparent QD LED can applicable to other quantum structure-based optical devices.