• Title/Summary/Keyword: ZnS: Cu

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Photoelectrochemical characterization of surface-modified CuInS2 nanorod arrays prepared via template-assisted growth and transfer

  • Yang, Wooseok;Kim, Jimin;Oh, Yunjung;Moon, Jooho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.401-401
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    • 2016
  • Although vertically aligned one-dimensional (1D) structure has been considered as efficient forms for photoelectrode, development of efficient 1D nanostructured photocathode are still required. In this sense, we recently demonstrated a simple fabrication route for CuInS2 (CIS) nanorod arrays from aqueous solution by template-assisted growth-and-transfer method and their feasibility as a photoelectrode for water splitting. In this study, we further evaluated the photoelectrochemical properties surface-modified CIS nanorod arrays. Surface modification with CdS and ZnS was performed by successive ion layer adsorption and reaction (SILAR) method, which is well known as suitable technique for conformal coating throughout nanoporous structure. With surface modification of CdS and ZnS, both photoelectrochemical performance and stability of CuInS2 nanorod arrays were improved by shifting of the flat-band potential, which was analyzed both onset potential and Mott-schottky plot.

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Reaction Path of Cu2ZnSnS4 Nanoparticles by a Solvothermal Method Using Copper Acetate, Zinc Acetate, Tin Chloride and Sulfur in Diethylenetriamine Solvent

  • Chalapathy, R.B.V.;Jung, Gwang Sun;Ko, Young Min;Ahn, Byung Tae;Kown, HyukSang
    • Current Photovoltaic Research
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    • v.1 no.2
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    • pp.109-114
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    • 2013
  • $Cu_2ZnSnS_4$ (CZTS) nanoparticles were synthesized by a solvothermal method using copper (II) acetate, zinc acetate, tin chloride, and sulfur in diethylenetriamine solvent. Binary sulfide particles such as CuS, ZnS, SnS, and $SnS_2$ were obtained at $180^{\circ}C$; single-phase CZTS nanoparticles were obtained at $280^{\circ}C$. CZTS nanoparticles with spherical shape and grain size of 40 to 60 nm were obtained at $280^{\circ}C$. In the middle of 180 and $280^{\circ}C$, CZTS and ZnS phases were found. The time variation of reaction at $280^{\circ}C$ revealed that an amorphous state formed first instead of binary phases and then the amorphous phase was converted to crystalline CZTS state; it is different reaction path way from conventional solid-state reaction path of which binary phases react to form CZTS. CZTS films deposited and annealed from single-phase nanoparticles showed porous microstructure and poor adhesion. This indicates that a combination of CZTS and other flux phase is necessary to have a dense film for device fabrication.

Sputtered Al-Doped ZnO Layers for Cu2ZnSnS4 Thin Film Solar Cells

  • Lee, Kee Doo;Oh, Lee Seul;Seo, Se-Won;Kim, Dong Hwan;Kim, Jin Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.688-688
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    • 2013
  • Al-doped ZnO (AZO) thin films have attracted a lot of attention as a cheap transparent conducting oxide (TCO) material that can replace the expensive Sn-doped In2O3. In particular, AZO thin films are widely used as a window layer of chalcogenide-based thin film solar cells such as Cu(In,Ga)Se2 and Cu2ZnSnS4 (CZTS). Mostly important requirements for the window layer material of the thin film solar cells are the high transparency and the low sheet resistance, because they influence the light absorption by the activelayer and the electron collection from the active layer, respectively. In this study, we prepared the AZO thin films by RF magnetron sputtering using a ZnO/Al2O3 (98:2wt%) ceramic target, and the effect of the sputtering condition such as the working pressure, RF power, and the working distance on the optical, electrical, and crystallographic properties of the AZO thin films was investigated. The AZO thin films with optimized properties were used as a window layer of CZTS thin film solar cells. The CZTS active layers were prepared by the electrochemical deposition and the subsequent sulfurization process, which is also one of the cost-effective synthetic approaches. In addition, the solar cell properties of the CZTS thin film solar cells, such as the photocurrent density-voltage (J-V) characteristics and the external quantum efficiency (EQE) were investigated.

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Effects of Drinking Water Supplemented with Copper on Tissue Concentrations of Copper, Iron and Zinc in Rats (음수중(飮水中) 동(銅)의 수준(水準)에 따른 흰쥐장기내(臟器內) 동(銅), 철(鐵) 및 아연(亞鉛)의 농도(濃度)에 미치는 영향)

  • Koh, Jin-Bog;Jeung, Bok-Mi;Kim, Jae-Young;Choi, Do-Jeom;Yang, Cha-Bum
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.16 no.2
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    • pp.63-68
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    • 1987
  • The effects of various levels of copper(Cu) intake on the concentrations of copper, iron (Fe) and 3inc(Zn) in rat tissues were studied in growing rats. For different groups the drinking water was supplemented with 0(control), 25, 50, 100 and 200ppm Cu(as copper sulphate) for 1 day respectively. All animal groups were fed with the control diet (Cu contents, 12.8%mg/kg diet) during the experiment. At the end of the 4 week experiment, body weight gain was slightly lower in the Cu supply groups than in control group. Liver and serum Cu were significantly higher in 50, 100 and 200ppm Cu of male and in 200ppm Cu of female than in control groups. Spleen Cu was significantly increased by the supplementation of Cu. Liver and heart Fe of male and heart Fe of female were increased by incresing supplementary Cu levels. In 50ppm Cu group, liver, spleen and kidney Fe of female increased but the others did not. Fe of tissues was different in male and female rats according to Cu levels supplied. Serum Zn of male and female was significantly lower in 50, 100 and 200ppm Cu groups than in control and 25ppm Cu groups. When supplemented with Cu levels there were no significant differences among groups for liver, kidney, spleen and heart Zn as well as heart and kidney Cu.

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Luminescence Characteristic of CNT Element in ZnS:(Cu, Al) Thin Film Fabricated by a Screen Printing Method (스크린 프린팅 방법으로 제작한 ZnS:(Cu, AL) 박막의 CNT 불순물 첨가에 의한 광학적 특성에 관한 연구)

  • Shon, Pong-Kyun;Shin, Jun-Ha;Bea, Jae-Min;Lee, Jae-Bum;Kim, Jong-Su;Lee, Sang-Nam
    • Journal of the Korean Graphic Arts Communication Society
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    • v.29 no.1
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    • pp.23-33
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    • 2011
  • This experimental focus to characterize luminescence properties related to CNT (Carbon Nano Tube) element dispersedly implanted in ZnS-based phosphor thin film panel fabricated by a screen printing method. More specifically FE-SEM measurements, L-V(Luminescence vs. Voltage) and photo luminescence were carried out to determine an optimum value of CNT concentration and film thickness for the thin film structure of CNT-ZnS:(Cu, Al) by the screen printing method. We confirmed that an optimum value of CNT concentration in the ZnS:(Cu, Al) film panel is about 0.75 wt% resulting that the electric conductivity is 1.6 times higher than that of pure CNT sample and showing that the luminescence intensity is increasing until the optimum concentration. Clearly, CNT is presenting in the luminescence process providing a pathway for the creation of hot electron and a channel for the electron-hole recombination but overly inserted CNT may hinder to produce the hot electron for making an avalanching process. In case of the overly doped CNT 1.0 wt% in the ZnS-based phosphor, the luminescence intensity is decreasing although the electric conductivity is exponentially increasing. Based on these results, we realized that hot electron occurred by the external electric field or exciton arose by the external photon source are reduced dramatically over the critical value of CNT concentration because CNT element provide various isolated residues in the composites of ZnS based phosphor rather than pathway or channel for the D-A(Donnor to Acceptor) pair transition or the radiative recombination of electron-hole.

Stability Improvement of CdTe Solar Cells using ZnTe:Na Back Contact (Na 도핑된 ZnTe 후면전극을 이용한 CdTe 태양전지의 안정성 개선에 관한 연구)

  • Cha, Eun Seok;Park, Kyu Charn;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.3 no.1
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    • pp.10-15
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    • 2015
  • Cu doping by copper or $Cu_2Te$ materials enhances p+ formation in CdTe near the back contact interface, allowing better formation of ohmic contact. However, the Cu in CdTe junction is also considered as a principal component of CdTe cell degradation. In this paper, Na-doped ZnTe layer was employed as a back contact material to improve the stability of CdTe solar cells. As a process variable, post $CdCl_2$ treatment of CdS/CdTe film was conducted before or after depositing ZnTe:Na on CdTe. The change of the photovoltaic properties of CdTe cells were investigated with aging time. Low-temperature photoluminescence analysis was conducted to describe the degradation mechanism. The result showed that the CdTe solar cells with better stability compare to Cu contact were achieved using an optimized ZnTe:Na back contact.

Properties of Aluminum Clad Sheets for Condenser Fins Fabricated with Transition Elements(Cu, Cr) added to Al-1.4Mn-1.0Zn Base Alloys (Cu, Cr 등 천이원소가 첨가된 Al-1.4Mn-1.0Zn 합금을 심재로 하여 제조된 콘덴서 핀용 알루미늄 클래드 박판의 특성)

  • Euh, K.;Kim, H.W.;Lee, Y.S.;Oh, Y.M.;Kim, D.B.
    • Transactions of Materials Processing
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    • v.23 no.6
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    • pp.386-391
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    • 2014
  • In the current study, Al-Mn-Zn alloys are strip-cast and used as the base alloy for the core of aluminum clad sheets used in automotive condenser fins. Transition elements such as Cu and Cr are added to the base core alloy in order to improve the properties of the clad sheets. The AA4343/Al-Mn-Zn-X(X: Cu, Cr)/AA4343 clad sheets are fabricated by roll bonding and further cold-rolled to a thickness of 0.08 mm. Clad sheets were intermediately annealed during cold rolling at $450^{\circ}C$ in order to obtain 40% reduction at the final thickness. Tensile strength and sag resistance of the clad sheets are improved by Cu additions to the core alloy, while corrosion resistance is also increased. Cr-additions to the clad sheets enhance sag resistance and provide low enough corrosion, although tensile strength is not improved. The effect of Cu and Cr additions on the properties of the clad sheets is elucidated by microstructural analysis.

Sediment Quality Assessment for Heavy Metals in Streams Around the Shihwa Lake (시화호 유역 하천 퇴적물에서의 중금속 오염도 평가에 관한 연구)

  • Jeong, Hyeryeong;Kim, Kyung-Tae;Kim, Eun-Soo;Ra, Kongtae;Lee, Seung-Yong
    • Journal of the Korean Society for Marine Environment & Energy
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    • v.19 no.1
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    • pp.25-36
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    • 2016
  • Heavy metals in the stream sediments around Shihwa Lake were studied not only to investigate the characteristics of spacio-temporal distribution but also to assess the pollution degree and ecological risk using various pollution indices. Among metals, Zn had the highest values (1,311 mg/kg) and Hg showed the lowest value (0.261 mg/kg). The order of mean concentrations (mg/kg) of metals was Zn>Cu>Pb>Cr>Ni>Co>As>Cd>Hg in stream sediments around Shihwa Lake. Metal concentrations showed different pollution pattern with industrial region, indicating that these metals originated from different sources and industrial region had higher metal concentration than rural/urban regions. The results of geoaccumulation index (Igeo) showed that the stream sediments were significantly polluted with Cd, Cu, Zn and Pb, indicating moderately to highly polluted by these metals. According to PLI consideration, industrial region was more seriously polluted by metals whereas an rural/urban region was not polluted. About 85% of sampling site for Cr, Ni, Cu, Zn and Pb from industrial regions were exceeded the PEL values. The mPELQ and SQI values derived from PEL of industrial region were classified as 'highly toxic' and 'very poor' and metal pollution level tend to be worse in wet season. This indicates that the industrial activities and stromwater runoff represents an important sources of heavy metals around Shihwa Lake.

Optimization of CdS buffer layers for $Cu_2ZnSnSe_4$ thin-film applications ($Cu_2ZnSnSe_4$ 태양전지의 적용을 위한 최적화 된 CdS 버퍼층 연구)

  • Kim, Gee-Yeong;Jeong, Ah-Reum;Jo, William
    • 한국태양에너지학회:학술대회논문집
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    • 2012.03a
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    • pp.400-403
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    • 2012
  • $Cu_2ZnSnSe_4$(CZTSe) is emerged as a promising material for thin-film solar cells because of non-toxic, inexpensive and earth abundant more than $Cu(In,Ga)Se_2$ materials. For fabricating compound semiconductor thin-film solar cells, CdS is widely used for a buffer layer which fabricated by a chemical bath deposition method (CBD). Through the experiment, we controlled deposition temperature and mol ratio of solution conditions to find the proper grain 크기 and exact composition. The optimum CdS layers were characterized in terms of surface morphology by using a scanning electron microscope (SEM) and atomic force microscope (AFM). The optimized CdS layer process was applied on CZTSe thin-films. The thickness of buffer layer related with device performance of solar cells which controlled by deposition time. Local surface potential of CdS/CZTSe thin-films was investigated by Kelvin probe force microscopy (KPFM). From these results, we can deduce local electric properties with different thickness of buffer layer on CZTSe thin-films. Therefore, we investigated the effect of CdS buffer layer thickness on the CZTSe thin-films for decreasing device losses. From this study, we can suggest buffer layer thickness which contributes to efficiencies and device performance of CZTSe thin-film solar cells.

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White Electroluminescent Device by ZnS: Mn, Cu, Cl Phosphors

  • Kim, Jong-Su;Park, Je-Hong;Lee, Sung-Hun;Kim, Gwang-Chul;Kwon, Ae-Kyung;Park, Hong-Lee
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.3 s.16
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    • pp.1-4
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    • 2006
  • White-light-emitting ZnS:Mn, Cu, Cl phosphors with spherical shape and the size of $20\;{\mu}m$ are successfully synthesized. They have the double phases of cubic and hexagonal structures. They are applied to electroluminescent (EL) devices by silk screen method with the following structure: $electrode/BaTiO_3$ insulator layer ($50{\sim}60\;{\mu}m$)/ ZnS:Mn, Cu, Cl phosphor layer ($30{\sim}50\;{\mu}m$)/ITO glass. The EL devices are driven with the voltage of 100 V and the frequency of 400 Hz. The EL devices show the three emission peaks. The blue and green emission bands are originated from $CICu^{2+}$ transition and $ClCu^+$ transition, respectively. The yellow emission band results from $^4T^6A$ transition of $Mn^{2+}$ ion. As an increase of Cu concentrations, the blue and green emission intensities decrease whereas the yellow emission intensity increases; the quality becomes warm white. It is due to the energy transfer from the blue and green bands to the yellow band.

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