• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1044-1048
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• 2007

With development of electronic products the demands for miniaturization and weight-lightening have increased until a recent date. Accordingly, The effort to substitute glass substrates was widely made. However, polymer substrates have weak point that substrates were damaged at high temperature. In this paper, we deposited transparent conductive film at low temperature. And we inserted Au thin film between oxide to compensate for deteriorated electrical characteristics. Ga-doped ZnO(GZO) multilayer coatings were deposited on glass substrate by DC sputtering. The optimization of deposition conditions of both AZO and Au layers were performed to obtain better electrical and optical characteristics in advance. We presumed that the properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibited the resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77 %. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.58-65
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• 2010

AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.656-661
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• 2005

The effects of gas atmosphere and in-situ thermal annealing in buffet layers on the characteristic of the ZnO grown by RF magnetron sputtering have been investigated. It was shown that the introduction of buffer layers grown at the gas atmospheres of the mixed $Ar/O_2$ and the in-situ thermal treatment of the ZnO buffer layer improved the structural and optical properties. In addition, the ZnO films on the buffer layer thermal-annealed at $N_2$ gas ambience showed the strong emission of the near band gap exciton with narrow linewidth by combining the high-temperature growth of the ZnO film.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.56-56
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.91-91
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.159-159
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• 1996

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.237-237
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• 2009

Zinc oxide (ZnO) thin film was deposited on Si substrates using polycrystalline (poly) 3C-SiC buffer layer, in which the ZnO film was grown by sol-gel method. Physical characteristics of the grown ZnO film was investigated experimentally by means of SEM, XRD, FT-IR (Furier Transform-Infrared spectrum), and AFM. XRD pattern was proved that the grown ZnO film on 3C-SiC layers had highly (002) orientation with low FWHM (Full width of half maxium). These results showed that ZnO thin film grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.21.1-21.1
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• 2011

Vertically aligned single-crystal ZnO nanowires have been successfully grown on c-plane sapphire substrate using chemical vapor deposition (CVD) without catalyst. According to growth temperatures, it was changed ZnO growth characteristic. We investigated the effect of substrate temperatures on the growth ZnO films or nanowires on c-plane (0001) sapphire substrates. The ZnO films were acquired at $500^{\circ}C$, whereas the ZnO nanowires were obtained at $600^{\circ}C$, $700^{\circ}C$, and $800^{\circ}C$. The growth behavior diameter and growth rate of ZnO were changed due to different temperature. As a result of analyzing in-plane residual stress by X-ray diffraction, the optimized condition of ZnO nanowires were at $600^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.568-571
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• 2005

Highly transparent ZnO films with low resistivity for thin film solar cell applications were fabricated at low temperature by rf magnetron sputtering. Al-doped ZnO films were deposited on glass substrates at a substrate temperature of $200^{\circ}C$. electrical and optical properties of the ZnO:Al films were investigated in terms of the reparation conditions. The transmittance of the ZnO:Al films in the visible range is 90 %. The lowest resistivity of the ZnO:Al films is about $5.7\times10^{-4}$ $\Omega$ cm at the Al content of 2.5 wt% with the film thickness of 500 nm. After deposition, the smooth surface of ZnO:Al films were etched in diluted HCl (0.5%) to investigate the variation of electrical and surface morphology properties due to an textured surface.

• Journal of Surface Science and Engineering
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• v.52 no.6
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• pp.289-292
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• 2019

Transparent and conducting titanium doped indium oxide (TIO) thin films were deposited by RF magnetron sputtering on zinc oxide (ZnO)-coated glass substrates to investigate the effect of the ZnO buffer layer on optical and electrical properties of TIO/ZnO bi-layered films. TIO 90 nm / ZnO 10 nm films having a lower resistivity (3.09×10^-3 Ωcm) and a higher visible transmittance (80.3%) than other TIO/ZnO films were prepared in this study. Figure of merit results indicate that a 10 nm thick ZnO thin film is an effective buffer layer that enhances optical transmittance and electrical conductivity of TIO films without intentional substrate heating or post-deposition annealing.