• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.576-576
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• 2012

High quality single crystalline strain controlled wurtzite ZnO nanowire arrays have been grown on conductive silicon and ITO substrates by a facile hydrothermal method. The diameter of the nanowires was found to be less than 90 nm approximately for both of the two kinds of substrates. The quality of the ZnO nanowire arrays is dramatically improved by hanging the substrate above from the bottom of the Teflon lined autoclave. The structural investigation indicates the preferential orientation of the nanowire along c-axis. In order to make the convincible comparison, the photoluminescence property of the nanowire arrays grown under different conditions are measured, the sharp near band edge emission from PL, low turn-on voltage ($1.9V/{\mu}m$) from field emission measurement and Fowler-Nordheim plot was investigated from ZnO nanowire arrays grown by proposed substrate hanging method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.127-127
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• 2009

The most important part of the fabrication solar cells is the anti-reflection coating when excludes the kinds of silicon substrates (crystalline, polycrystalline, or amorphous), patterns and materials of electrodes. Anti-reflection coatings reduce the reflection of sunlight and at last increase the intensity of radiation to inside of solar cells. So, we can obtain increase of solar cell efficiency about 10% using anti-reflection coating. There are many kinds of anti-reflection film for solar cell, such as SiN, $SiO_2$, a-Si, and so on. And, they have two functions, anti-reflection and passivation. However such materials could not perfectly prevent reflection. So, in this work, we investigated the anti-reflection coating with the columnar structure ZnO thin film. We synthesized columnar structure ZnO film on glass substrates. The ZnO films were synthesized using a RF magnetron sputtering system with a pure (99.95%) ZnO target at room temperature. The anti-reflection coating layer was sputtered by argon and oxygen gases. The angle of target and substrate measures 0, 20, 40, 60 degrees, the working pressure 10 mtorr and the 250 W of RF power during 40 minutes. The confirm the growth mechanism of ZnO on columnar structure, the anti-reflection coating layer was observed by field emission scanning electron microscopy (FE-SEM). The optical trends were observed by UV-vis and Elleso meter.

• 한국세라믹학회지
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• 제35권1호
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• pp.17-22
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• 1998

B-doped ZnO thin films on glass substrates were prepared by sputtering the ceramic targets which had been prepared by sintering disks consisting of ZnO and various amounts of B2O3 While pure ZnO films show-ed a c-axis oriented growth the B-doping retarded the prefered orientation and grain growth of the film. Electron concentrations for undoped and B-doped ZnO films were on the order of 7.8${\times}$1018 cm-3 and 5${\times}${{{{ {10 }^{20 } }} c{{{{ {m }^{-3 } }} respectively. The electron mobility however decreased with the B-doping concentration. Optical meas-urements on the films showed that the average transmittance in the visible range was higher than 85% The measurements also indicated a blueshift of the absorption edge with doping.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.756-759
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• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The undoped ZnO thin films were grown on $c-Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• 열처리공학회지
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• 제32권2호
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• pp.74-78
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• 2019

$Zn_2SnO_4$ thin films were deposited on quartzs substrates by using radio-frequency magnetron sputtering system. Thermal treatments at various temperatures were performed to evaluate the effect of annealing temperatures on the properties of $Zn_2SnO_4$ thin films. Surface morphologies were examined by using field emission-scanning electron microscopy and showed that sizes of grains were slightly increased and grain boundaries were clear with increasing annealing temperatures. The deposited $Zn_2SnO_4$ thin films on quartzs substrates were amorphous structures and no distinguishable crystallographic changes were observed with variations of annealing temperatures. The optical transmittance was improved with increasing annealing temperatures and was over 90% in the wavelength region between 350 and 1100 nm at the annealing temperature of $600^{\circ}C$. The optical energy bandgaps, which derived from the absorbance of $Zn_2SnO_4$ thin films, were increased from 3.34 eV to 3.43 eV at the annealing temperatures of $450^{\circ}C$ and $600^{\circ}C$, respectively. As the annealing temperature was increased, the electron concentrations were decreased. The electron mobility was decreased and resistivity was increased with increasing annealing temperatures with exception of $450^{\circ}C$. These results indicate that heat treatments at higher annealing temperatures improve the optical and electrical properties of rf-sputtered $Zn_2SnO_4$ thin films.

• 한국재료학회지
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• 제15권5호
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• pp.293-300
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• 2005

ZnO:Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO:Li sintered pellet was irradiated by the ArF (193 nm) excimer laser. The growth temperature was fixed at $400^{\circ}C$. The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of epilayers measured by van der Pauw-Hall method are $2.69\times10cm^{-3}$ and $52.137cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of epilayers obtained from the absorption spectra is well described by the Varshni's relation, $E_g(T)=3.5128eV{\cdot}(9.51\times10^{-4}eV/K)T^2/(T+280K)$. After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li has been investigated by PL at 10 K. The Peaks of native defects of $V_{zn},\;V_o,\;Zn_{int},\;and\;O_{int}$ showned on PL spectrum are classified as a donors or accepters type. We confirm that $ZnO:Li/Al_2O_3$ in vacuum do not form the native defects because ZnO:Li epilayers in vacuum existe in the form of stable bonds.

• 한국분말재료학회지
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• 제23권4호
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• pp.270-275
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• 2016

We report on an all-solution-processed hydrothermal method to control the morphology of ZnO nanostructures on Si substrates from three-dimensional hemispherical structures to two-dimensional thin film layers, by controlling the seed layer and the molar contents of surfactants during their primary growth. The size and the density of the seed layer, which is composed of ZnO nanodots, change with variation in the solute concentration. The ZnO nanodots act as heterogeneous nucleation sites for the main ZnO nanostructures. When the seed layer concentration is increased, the ZnO nanostructures change from a hemispherical shape to a thin film structure, formed by densely packed ZnO hemispheres. In addition, the morphology of the ZnO layer is systematically controlled by using trisodium citrate, which acts as a surfactant to enhance the lateral growth of ZnO crystals rather than a preferential one-dimensional growth along the c-direction. X-ray diffraction and energy dispersive X-ray spectroscopy results reveal that the ZnO structure is wurtzite and did not incorporate any impurities from the surfactants used in this study.

• 한국재료학회지
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• 제25권6호
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• pp.300-304
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• 2015

Nanorod ZnO and spherical nano ZnO for gas sensors were prepared by hydrothermal reaction method and hydrazine method, respectively. The nano-ZnO gas sensors were fabricated by a screen printing method on alumina substrates. The gas sensing properties were investigated for hydrocarbon gas. The effects of Co concentration on the structural and morphological properties of the nano ZnO:Co were investigated by X-ray diffraction and scanning electron microscope (SEM), respectively. XRD patterns revealed that nanorod and spherical ZnO:Co with a wurtzite structure were grown with (100), (002), (101) peaks. The sensitivity of nanorod and spherical ZnO:Co sensors was measured for 5 ppm $CH_4$ and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity to the $CH_4$ and $CH_3CH_2CH_3$ gas of spherical nano ZnO:Co sensors was observed at Co 6 wt%. The spherical nano ZnO:Co sensor exhibited a higher sensitivity to hydrocarbon gas than nanorod ZnO.

• 한국재료학회지
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• 제24권8호
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• pp.413-416
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• 2014

The effects of an addition of CNT on the sensing properties of nano ZnO:CNT-based gas sensors were studied for $H_2S$ gas. The nano ZnO sensing materials were grown by a hydrothermal reaction method. The nano ZnO:CNT was prepared by ball-milling method. The weight range of the CNT addition on the ZnO surface was from 0 to 10%. The nano ZnO:CNT gas sensors were fabricated by a screen-printing method on alumina substrates. The structural and morphological properties of the ZnO:CNT sensing materials were investigated by XRD, EDS, and SEM. The XRD patterns revealed that nano ZnO:CNT powders with a wurtzite structure were grown with (1 0 0), (0 0 2), and (1 0 1) dominant peaks. The size of the ZnO was about 210 nm, as confirmed by SEM images. The sensitivity of the nano ZnO:CNT-based sensors was measured for 5 ppm of $H_2S$ gas at room temperature by comparing the resistance in air with that in target gases.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1627-1630
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300{\sim}450^{\circ}C$ and flow rate of 100${\sim}$700 seem. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD) and the optical properties of the ZnO were characterized by photoluminescence(PL).