• Journal of the Korean Ceramic Society
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• 제40권2호
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• pp.146-152
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• 2003

The waste ferrites from magnetic core manufacturing process were used to $CO_2$gas decomposition to avoid the greenhouse effects. The waste ferrites are the mixed powder of Ni-Zn and Mn-Zn ferrites core. In the reduction of ferrites by 5% $H_2/Ar$ mixed gas, the weight loss of ferrites was about 14~16wt%. After the$CO_2$gas decomposition reaction, the weight of the reduced ferrites was increased up to 11wt%.$CO_2$gas was decomposed by oxidation of Fe and FeO in reduced compound and the phase of the waste ferrite was changed to spinel structure. A new technique capable of$CO_2$decomposition as low cost process through utilizing waste ferrite was development.

• Journal of Magnetics
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• 제7권2호
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• pp.29-39
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• 2002

The initial NiCuZn synthetic ferrite were acquired from thermally decomposing the metal nitrates $Fe(NO_3)_39H_2O, Zn(NO_3)_26H_2O, Ni(NO_3)_26H_2O, and Cu(NO_3)_23H_2O$ at $150^circ{C}$ for 24 hours, and then we calcined the synthetic powder at $500^circ{C}$, pulverized each of those for 3, 6, 9, 12, and 15 hours in a steel ball mill, sintered each at $700^circ{C}$ to $1,000^circ{C}$ for 1 hour, and thus studied their microstructures and electromagnetic properties. We could make the initial specimens chemically bonded in liquidity at a low-temperature $150^circ{C}$, by using the low melting points less than $200^circ{C}$ of the metal nitrates instead of the mechanical ball-mill pulverization, then narrow a distance between the particles into a molecular one, and thus lower the reaction point of sintering by at least $200^circ{C}$ to $300^circ{C}$. Their initial permeability was 50 to 400 and their maximum magnetic induction density and coercive force, 2,400 G and 0.3 Oe to 0.5 Oe respectively, which was similar to those of NiZnCu ferrite synthesized in the conventional process. In the graph of initial permeability by frequencies, a $180^circ{C}$ rotation of the magnetic domains which appears in a broad band of micro-wave before and after the resonance frequency, could be perceived.

• ETRI Journal
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• 제31권6호
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• pp.803-805
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• 2009

Improvement of the color rendering index (CRI) and luminance of a white alternate current powder electroluminescent (ACPEL) device has been attempted using ZnS:Cu,Cl, $Tb_3Al_5O_{12}$:Ce (TAG:Ce), and CaS:Eu phosphors with a layered structure. The device with TAG:Ce and ZnS:Cu,Cl phosphors showed a CRI of 75, with a luminance increase of about 30% depending on the thickness of the TAG:Ce. Further CRI improvement was attempted using CaS:Eu. When they were separately screen-printed, the CRI was increased up to 89 with no decrease in luminance.

• Journal of the Korean Ceramic Society
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• 제56권5호
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• pp.474-482
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• 2019

Chromium-doped zinc ferrite nanoparticles with the general formula Cr_yZnFe_2-yO₄ (y = 0, 0.025, 0.05, 0.075, and 0.1) were synthesized by a surfactant-assisted chemical co-precipitation route using metal nitrate salt precursors. The phase purity and structural parameters were determined by powder X-ray diffraction. The concentration of Cr³⁺ doped into ZnFe₂O₄ (ZF) noticeably affected the crystallite size, which was in the range of 22 nm to 36 nm, and all samples showed a single cubic spinel structure without any secondary phase or impurities. The lattice parameter, X-ray density, and skeletal density increased with an increase in the Cr-doping concentration; on the other hand, a decreasing trend was observed for the particle size and porosity. The influence of Cr³⁺ substitution on ZF magnetic properties were studied under an applied field of 15 kOe. The overall results revealed that the incorporation of a small amount of Cr dopant changed the structural, electrical, and magnetic properties of ZF.

• Journal of the Korean Institute of Telematics and Electronics D
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• 제34D권2호
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• pp.27-37
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• 1997

Photoluminescent and cathodoluminescent charcteristics of inorganic luminescent materials were investigated ot develop possible phosphors for thin film electroluminescent (TFEL) device applications. Mg, Zn, and Photoluminescent and cathodoluminescent charcteristics of inorganic luminescent materials were investigated ot develop possible phosphors for thin film electroluminescent (TFEL) device applications. Mg, Zn, and $Si_3N_4$ powders were used to synthesize $(Mg_xZn_{1-x})SiN_2$ host materials. $Tb_4O_7$ and $Eu_2O_3$ powdrs were added as luminescent centers. Very sharp emission spectra of $Tb^{3+}$ ions were observed from $Mg._5Zn._5SiN_2:Tb$ sampels sintered at $1400^{\circ}C$ for an hour and the maximum intensity of emission spectra occured at wavelength of 550nm (green light). Synthetic conditions of $(Mg_xZn_{1-x})SiN_2:Eu$ phosphors were optimized for the hghest luminescence. The Eu concentrations were varied from 0.2% to 1.6%. Before firing, the powders were mixed using ballmills, methanol, acetone, or D.I. water. The Mg/Zn ratio also were varied from x=0.3 to x=0.7. The maximum PL intensity was obtained from a sample with 1.2% Eu concentration and the powder was mixed with methanol and dried before firing. The maximum intensity of the emission spectra occurred t the wavelength of 470nm(blue light). TFEL devices fabricated by using sputter deposition of $(Mg._3Zn._7)SiN_2:Eu$ phosphor layer showed yellowish white emission at the phosphor field of 2MV/cm.

• Journal of the Korean Ceramic Society
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• 제39권5호
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• pp.438-445
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• 2002

In this study, the glass frit of $PbO-TiO-2-SiO_2-BaO-ZnO-Al_2O-3-CaO-B_2O_3-Bi_2O_3-MgO$ system was manufactured. The glass was melted at $1,400{\circ}C$, quenched and attrition-milled. The glass frit powder was pressed and fired for 2h at the range of $750~1,000{\circ}C$. The crystallization of glass frit began at about $750{\circ}$ and at low temperature, the main crystal phases were hexagonal celsian($BaAl_2Si_2O_8$) and alumina. As the firing temperature increased, the crystal phases of monoclinic celsian, zinc aluminate, zinc silicate, calcium titanium silicate and titania appeared. And the increase of firing temperature led to transformation of hexagonal celsian to monoclinic. The only glass frit containing 15wt% PbO had the crystal phase of solid solution of $PbTiO_3-CaTiO_3$. At the frequency of 1 MHz, the dielectric constant of glass frit crystallized was in the range of 11~16 and the dielectric loss less than 0.020. But the glass frit containing 15wt% PbO had the dielectric constant of 17~26 and loss of 0.010~0.015 because of crystal phase of solid solution of $PbTiO_3-CaTiO_3$.

• Korean Journal of Materials Research
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• 제18권6호
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• pp.339-346
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• 2008

Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.49-49
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• 2003

Nanometer sized zinc oxide (ZnO) powder was synthesized by a novel "solution-combustion method" and its photocatalytic activity was evaluated with the recovery of Ag from a used photofilm developing solution. Different parameters affecting the reaction rates like wavelength of the W light used, reaction temperature, mass of the used photocatalyst, and effect of scavenger were tested. The optimum parameters were found as follows. UV wavelength of less than 385nm, reaction temperature between 40- 60 $^{\circ}C$, photocatalyst concentration of 3-6 g/1, and scavenger concentration of 0.3-0.4 g/1.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1300-1302
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• 2009

Transparent $Zn_2SiO_4:Mn^{2+}$ film has been synthesized by spray pyrolysis with various spraying conditions. It illuminates an efficient green emission with the relative emission intensity about 45% under 147nm excitation of a commercial powder phosphor. Additionally, the zinc precursors and additives play a key factor both controlling luminous efficiency and transparency.

• Applied Chemistry for Engineering
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• 제21권2호
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• pp.224-229
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• 2010

Transparent conductive oxide films have been widely used in the field of flat panel display (FPD). Transparent conductive Indium Zinc Oxide (IZO) thin films with excellent chemical stability have attracted much attention as an alternative material for Indium Tin Oxide (ITO) films. In this study, using $In_2O_3$ and ZnO powder mixture with a ratio of 90 : 10 wt% as a target, IZO films are prepared on polynorbornene (PNB) substrates by electron beam evaporation. The effect of thickness and $O_2$ introduction flow rate on the optical, electrical, structural properties and surface composition of deposited IZO films were investigated by UV/Visible spectrophotometer, 4-point probe method, SEM, XRD and XPS.