• Journal of Korean Ophthalmic Optics Society
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• v.13 no.1
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• pp.71-76
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• 2008

Purpose: A simple and efficient method to prepare nanocrystalline ZnO thin film with pure strong UV emission on soda-lime-silica glass substrates by low-temperature annealing was improved. Methods: Crystal structural, surface morphological, and optical characteristics of nanocrystalline ZnO thin films deposited on soda-lime-silica glass substrates by prefiring final annealing process at 300$^{\circ}C$ were investigated by using X-ray diffraction analysis, field emission-scanning electron microscope, scanning probe microscope, ultraviolet-visible-near infrared spectrophotometer, and photoluminescence. Results: Highly c-axis-oriented ZnO films were obtained by prefiring at 300$^{\circ}C$. A high transmittance in the visible spectra range and clear absorption edge in the ultra violet range of the film was observed. The PL spectrum of ZnO thin film with a deep near band edge emission was observed while the defect-related broad green emission was nearly quenched. Conclusions: Our work will be possibly adopted to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below 300$^{\circ}C$, in the future.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.336-336
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• 2013

Zinc oxide (ZnO) based transparent oxide semiconductors have been studied due to their high transmittance and electrical conductivity. Pure ZnO have unstable optical and electrical properties at high temperatures but doped ZnO thin films can have stable optical and electrical properties. In this paper, transparent oxide semiconductors of Y-doped ZnO thin films prepared by sol-gel method. The ionic radius of $Y^{3+}$ (0.90 A) is close to that of $Zn^{2+}$ (0.74 A), which makes Y suitable dopant for ZnO thin films. The Sn-doped ZnO thin films were deposited onto quartz substrates with different atomic percentages of dopant which were Y/Zn = 0, 1, 2, 3, 4, and 5 at.%. These thin films were pre-heated at $150^{\circ}C$ for 10 min and then annealed at $500^{\circ}C$ or 1 h. The structural and optical properties of the Y-doped ZnO thin films were investigated using field-emission scanning electronmicroscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.83-83
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• 2011

본 연구에서는 p-type Si (100) 위에 분자선 에피택시 성장방법으로 ZnO 완충층이 삽입된 ZnO 박막을 성장시켰다. ZnO 완충층은 Zn 셀 셔터의 열림/닫힘을 반복하는 성장 멈춤법으로 성장되었다. Zn 셀 셔터의 열림 시간은 4분, 2분, 1분이며 닫힘 시간은 2분으로 동일하게 유지하였다. 이러한 과정은 각각 5, 10, 20회로 반복되었으며 ZnO 완충층을 성장한 후 ZnO 박막은 기존의 분자선 에피택시 방법으로 성장되었다. ZnO 박막의 구조적, 광학적 특성은 field-emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL)로 조사하였다. SEM 측정결과 성장 멈춤 횟수가 증가함에 따라 ZnO 박막의 표면은 섬(island) 구조에서 미로(maze) 구조로 변화하였고, XRD 측정결과 full-width at half-maximum (FWHM) 이 감소하고 결정립 크기(grain size)가 증가하였다. 그리고 PL 측정결과 성장 멈춤 횟수가 증가함에 따라 near-band-edge emission (NBE) 피크의 세기가 증가하였고 deep-level emission (DLE) 피크의 위치는 오렌지 발광에서 녹색 발광으로 청색편이(blue-shift)하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.14-17
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• 2010

$ZnGa_2O_4$ powder were prepared by combustion method and $Mn^{2+}$ ions, a green luminescence activator, and $Cr^{3+}$ ions, a red luminescence activator were separately doped into $ZnGa_2O_4$. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and photoluminescence (PL). The various $ZnGa_2O_4$ peaks, with the (311) main peak, appeared at all sintering temperature XRD patterns. The PL specctrums of $ZnGa_2O_4$ powder showed main peak of 425 nm, and maximum intensity at the sintering temperature of $1200^{\circ}C$. SEM images shown that nano sized particles(about 200 nm) were of spherical shape. The characteristics of $ZnGa_2O_4$ containing 0.004 mol $Mn^{2+}$(505 nm, green) and $ZnGa_2O_4$ containg 0.002 mol $Cr^{3+}$ (696 nm, red) were shown to be the best.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.11
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• pp.1835-1839
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• 2016

In this study, ZnO nanorods were grown by a hydrothermal method. $SiO_2/Si$ wafers and glass were used as substrates. ~20 nm-thick ZnO thin films were rf magnetron sputtered for seed layers. The precursor was prepared by mixing zinc nitrate hexahydrate and hexamethylenetetramine (hexamine) in DI water. The concentration of zinc nitrate hexahydrate was fixed at 0.05 mol, and that of hexamine was varied between 0 mol to 0.1 mol. The reactor containing substrates and precursor was put in an oven maintained at $90^{\circ}C$ for 1 h. X-ray diffraction was carried out to analyze the crystallinity of ZnO nanorods, and a field emission scanning electron microscope was employed to observe the morphology of nanorods. Transmittance and absorbance were measured by a UV-Vis spectrophotometer. Photoluminescence measurements were conducted using 266 nm light.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.316-321
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• 2009

Er-doped ZnO(ZnO:Er) films were deposited onto MgO wafers by ultrasonic spray pyrolysis at 550 $^{\circ}C$ varying the concentration of Er in the deposition source from 0.5 wt% to 3.0 wt%. Annealing of the films in a vacuum was carried out to increase the intensity of ultraviolet(UV) emission from the films. The annealing temperature was between 600$^{\circ}C$ and 800$^{\circ}C$. The crystallographic properties and surface morphology of the films were investigated by X-ray diffraction(XRD)and scanning electron microscope(SEM), respectively. The properties of photoluminescence(PL) for the films were investigated by the dependence of PL spectra on the annealing temperature. X-ray photoelectron spectroscopy(XPS) was conducted to find the composition change in the films by the annealing.

• Bulletin of the Korean Chemical Society
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• v.18 no.6
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• pp.608-612
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• 1997

The preparation and photoluminescence properties of $ZnGa_2O_4$ : Mn phosphor are presented. Under 254 nm excitation $Zn_1-_xMn_xGa_2O_4$ exhibits the green emission band at 506 nm wavelength and maximum intensity where x=0.005. The manganese activated $ZnGa_2O_4$ phosphor prepared by the polymerized complex method shows a remarkable increase in the emission intensity and is smaller particle size than that prepared by conventional method. Also, electron paramagnetic resonance study on $ZnGa_2O_4$ : Mn powders indicates that the increase in emission intensity after firing treatment in mild hydrogen reducing atmosphere is due to the conversion of the higher valent manganese to $Mn^{2+}$.

• Journal of the Optical Society of Korea
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• v.17 no.6
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• pp.543-547
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• 2013

A temperature dependent (10K-290K) photoluminescence (PL) study for two differently prepared ZnO thin films (as-grown and O-plasma treated) is presented. Four characteristic peaks were identified for both samples: (i) neutral donor-bound excitons ($D^oX$), (ii) two electron satellites (TES), (iii) phonon replica of $D^oX$ ($D^oX$-1LO), and (iv) donor-acceptor pair transition (DAP). As the sample temperature increased, $D^oX$-1LO and DAP transitions became indistinct. This was accompanied by newly-rising emission of free electron-acceptor transitions (e, $A^o$). The spectral evolution with temperature for as-grown samples also showed the optical emission from free excitons, which became dominant at higher temperatures. Some features related to O-plasma were identified in PL spectra: (i) different positions of TES transitions (28meV lower than $D^oX$ for as-grown samples and 35meV for O-plasma treated samples), (ii) the decrease of spectral intensity in both emissions of $D^oX$ and DAP after O-plasma treatment, and (iii) no noticeable transition from free excitons after the O-plasma treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.208-208
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• 2013

ZnO는 직접천이형 반도체로 약 3.37 eV의 넓은 에너지 band-gap과 60 meV의 비교적 큰 엑시톤 결합 에너지를 가지고 있다. 또한 단결정 성장 가능과 투명성 등 많은 장점들로 인하여 GaN와 대체할 자외선 또는 청색 발광소자나 ITO를 대체할 투명전극 같은 광범위한 광전소자로 큰 주목을 받으며 연구되어 왔다. 이러한 ZnO는 다양한 물질들의 첨가를 통해 인위적으로 특성변화가 가능한데 Mg, Be, Cd 첨가를 통한 에너지 밴드갭의 확장과 수축, Al 첨가를 통한 전기전도성의 증가 등이 그 예이다. 최근에는 밴드갭 조절을 이용한 ZnO-ZnMgO와 같은 이종접합구조가 광소자 등의 응용을 목적으로 많은 연구가 이루어지고 있다. 더불어 나노선이나 나노막대 같은 1차원 구조를 갖는 ZnO 계열 반도체의 연구는 현재 큰 이슈가 되고 있는 나노 크기의 소자 개발에 매우 큰 적용 가능성을 가지고 있다. 우리는 수열합성법을 이용하여 hexagonal ZnO 나노막대를 성장하고 그 표면에 core-shell 형태의 $ZnO-Zn_{1-x}Mg_xO$ (x=0.084) 양자우물을 원자층증착법으로 증착하였다. 본 연구에서는 만들어진 ZnO 나노막대와 ZnO-ZnMgO 나노막대, core-shell ZnO-ZnMgO 양자우물 sample들의 저온(5 K) Photoluminescence 측정을 통하여 광학적 band 구조를 분석하였다. 실험적으로 의도된 양자우물 두께와 다른 실제 형성된 양자무물의 두께를 알아내기 위하여 2차원 hexagonal 양자우물 band 구조에서 self-consistent nonlinear Poisson-Schr$\"{o}$dinger 방정식 계산과 컴퓨터 시뮬레이션을 이용하였으며, 이 방법으로 계산된 값과 실험값의 비교를 통하여 실제 형성된 양자우물의 두께를 정량적으로 유출할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.250-250
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• 2011

Zinc oxide (ZnO) structures have great potential in many applications. Currently, the most commonly used method to grow ZnO nanostructres are the vapor transport method (VPT). The morphology of the ZnO structures largely related to the growth conditions, including growth temperature, distance between the substrate and source, and gas ambient. Previously ZnO nanosturecutres with high crystallinity were obtained at the growth temperature of 800$^{\circ}C$, in the argon and oxygen gas ambient. In this study, we report the properties of the ZnO nanostructures, which were synthesized on Au-catalyzed Si substrate by VPT, using a mixture of ZnO and graphite powders as source material under the different condition, including gas ratio of argon/oxygen and distance between substrate and source at the growth temperature of 800$^{\circ}C$. The structural and optical properties of the ZnO nanostructures were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL).