• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.583-583
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• 2012

최근 석유 자원의 고갈로 인한 대체자원의 관심이 커지면서 박막 태양전지에 대한 연구가 활발히 진행되고 있다. 기존의 단일 박막 태양전지는 Shockley-Queisser limit인 40.7%가 변환 효율의 최대값으로 한계가 정해져있다. 이 한계를 넘기기 위하여 현재 여러 층의 박막을 쌓은 tandem 태양전지, 양자점을 이용한 태양전지, 그리고 중간밴드계 태양전지가 제시되고 있다. 중간 밴드계 태양전지는 이론적으로 변환 효율이 63.2%에 달하며 제조 공정이 매우 용이하다는 장점을 가지고 있다. 이중에 ZnSe는 에너지밴드갭이 상온에서 2.7 eV를 가지고 있는 물질로서 파란색 빛을 내는 발광소자로 각광을 받고 있고, 산소를 주입했을 경우에 p형이 되는 성질과 자연적으로 n 형인 성질로 인해 박막 태양전지로 응용성에 대한 관심이 커지고 있다. 산소나 질소를 주입했을 경우 페르미준위 근처에서 중간밴드가 형성되었다는 연구결과들은 ZnTe(O)나 GaNAs를 통하여 확인되었으나, 현재까지 ZnSe를 이용한 중간밴드 태양전지에 대한 연구결과들은 거의 없는 상태이다. 본 연구에서는 ZnSe를 다양한 기판 온도에서 펄스레이저 증착법을 이용하여 성장하였고 성장하는 동안 산소 노출조건을 조절하여 깊은준위 에너지밴드형성에 대한 연구를 진행하였다. 성장온도와 산소 노출량에 따른 깊은준위에 대한 변화를 관찰하기 위하여 photoluminescence 스펙트럼을 분석하였으며, 박막의 품질에 대해 조사하기 위하여 X-ray diffraction을 이용하였다.

• The Journal of the Convergence on Culture Technology
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• v.9 no.5
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• pp.523-528
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• 2023

The applicability as a material to improve solar cell performance was reviewed by synthesizing a phosphor that emits red wavelengths by a liquid synthesis method using a metal salt aqueous solution and a polymer medium as a starting material. An aqueous solution was prepared using nitrate of metals such as Ca, Zn, Al, and Eu, and a precursor impregnated with starch, a natural polymer, was sintered to synthesize CaZnAlO:Eu phosphor powder. The surface structure and composition analysis of the synthesized CaZnAlO:Eu phosphor powder were analyzed by scanning electron microscope(SEM) and energy-dispersed X-ray spectroscopy(EDS). The crystal structure of CaZnAlO:Eu phosphor particles was analyzed by an X-ray diffraction analyzer (XRD). As a result of measuring the photoluminescence(PL) characteristics of the phosphor, it was confirmed that a red phosphor with a light emitting wavelength of 650-780nm was successfully synthesized. According to SEM and EDS analysis, the synthesized Ca₁₄Zn₆Al_9.93O₃₅:Eu³⁺_0.07 phosphor powder has a uniform particle size, and Eu ions used as an activator are present. The synthesized CZA:Eu³⁺ phosphor can be used as a material that can increase the light absorption efficiency of the solar cell by converting ultraviolet or visible light down conversion into a wavelength in the near-infrared region.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.2-86.2
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• 2015

Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.46-50
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• 1999

$\textrm{Zn}_{2-x}\textrm{Mn}_{x}\textrm{SiO}_{4}$ green phosphors have been prepared by the solution reaction method and the photoluminescence and crystalline properties were studied as a function of both the firing temperature ($900^{\circ}C$~$1200^{\circ}C$) and the concentration of Mn activator (x=0.01~0.20). Under 147 nm and 254nm and excitation sources, the emission intensity of the phosphors was increased about 4 times increasing firing temperatures from $900^{\circ}C$ to $1200^{\circ}C$. From the XRD analysis, $\textrm{Zn}_{2}\textrm{SiO}_{4}$:Mn phosphors fired above $1100^{\circ}C$ showed willemite crystal structure. Under 147nm excitation, the maximum emission intensity was obtained at the Mn concentration of x=0.02 for $\textrm{Zn}_{2-x}\textrm{Mn}_{x}\textrm{SiO}_{4}$ phosphors fired at $1200^{\circ}C$ and the concentration quenching was occurred at the Mn concentration above x=0.10. The phosphor particles showed almost spherical shapes with the average size of around 2~3$\mu\textrm{m}$ by the SEM morphology.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.247-247
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• 2012

Gd-doped ZnO thin films were prepared with different growth temperatures by using a radio-frequency magnetron sputtering method. The deposited samples were characterized by using the X-ray diffractometer, the scanning electron microscopy, and the photoluminescence spectroscopy. All of the films show an average transmittance of about 85% in the wavelength range from 400 to 1100 nm.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.211-216
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• 2011

In this study, the effects of growth temperature on structural and optical properties of hydrothermally grown ZnO nanorod arrays have been investigated. Zinc nitrate ($Zn(NO_3)_2$) and hexamethylenetetramine were used as precursors. The ZnO buffered Si(100) with a thickness of 40 nm was used as the substrates. The ZnO nanorods were grown on these substrates with the temperature ranging from 55 to $115^{\circ}C$. The results were characterized by scanning electron microscope, X-ray diffraction and room temperature photoluminescence measurements. Well-aligned ZnO nanorods arrays were obtained from all samples. The tips of nanorods were flat when the temperature was less than $95^{\circ}C$, and the sharp-tip nanoneedle-like morphologies were obtained with the temperature of $115^{\circ}C$. In addition, some bundles were on the nanorods arrays with $115^{\circ}C$ due to the non-equilibrium growth. The growth temperature could affect the crystal and optical properties of ZnO. For the effects on crystal properties, the intensity of (002) peak was increased as the temperature was increased to $75^{\circ}C$, then decreased as the temperature was further increased to $115^{\circ}C$. As for the effects on optical properties, the intensity ratio of UV peak to visible peak is increased with the temperature increasing and the strongest UV peak intensity was obtained with the growth temperature of $95^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.807-810
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• 2002

$GdPO_4$:Tb phosphor particles with spherical shape and high photoluminescence were prepared by spray pyrolysis. The brightness of prepared $GdPO_4$:Tb under the vacuum ultraviolet(VUV) illumination was comparable with that of the commercial $Zn_2SiO_4$:Mn phosphor particles. The photoluminescence spectra of $GdPO_4$:Tb phosphor particles had maximum peak at 547 nm, and the sharp peaks at 480 nm, 580 nm, and 620 nm. The spherical morphology of prepared $GdPO_4$:Tb particles was completely maintained even after the posttreatment up to 1100 $^{\circ}C$. When the posttreatment temperature was over 1100 $^{\circ}C$, the particles did not have the spherical shape anymore. The average particle size of $GdPO_4$:Tb phosphor particles prepared by using $(NH_4)_2HPO_4$ was changed from 0.5 to 1.9 ${\mu}m$ and its effect on the PL intensity was investigated. It was found that the optimized $GdPO_4$:Tb particles have a good excitation spectrum comparable to that of the commercial $Zn_2SiO_4$:Mn phosphor particles under the VUV illumination from 140 to 220 nm. We concluded that the $GdPO_4$:Tb phosphor particles with spherical shape prepared by spray pyrolysis is a promising candidate for a green-emitting PDP phosphor.

• Korean Journal of Materials Research
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• v.23 no.6
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• pp.304-308
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• 2013

The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of $Cu_2ZnSnS_4$ (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/$SiO_2$/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at $500^{\circ}C$ in a $H_2S$ gas environment. $H_2S$ (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.346.2-346.2
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• 2014

To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.290-294
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• 2000

ZnS:Mn TFEL devices were fabricated by electron-beam evaporation method and then the electro-optical properties were investigated. To investigate the capacitance which was due to oxygen vacancy at the $Ta_2O_5$ thin film, AES(Auger Electron Spectroscopy) and C-F(capacitance-frequency) measurements were used. It was found that the capacitance was decreased by annealing the $Ta_2O_5$ film in oxygen ambience. From EL emission measurement, we observed the EL emission spectrum which had the peak range from 550nm and 650nm. This emission is associated with the transition from $^4T_1(^4G)$ first excited state to $^6A_1(^6S)$ ground state in the $3d^5$ energy level configuration of $Mn^{2+}$ occurs. The threshold voltage of EL device with $Ta_2O_5$ insulator layer was found to be 24V~28V. The CIE color coordinates of these emission are X=0.5151, Y=0.4202 which is yellowish orange emitting. The EL device using $Ta_2O_5$ insulator layer can be driven with a low voltage which is beneficial to the practical application.