• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.15-16
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• 2008

We have grown N-doped ZnO thin films on sapphire substrate by employing dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound exciton peak ($A^0X$) that indicated the successful p-type doping of ZnO with N.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.137-138
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• 2012

ZnO 박막을 Sol-gel용액을 이용한 스핀코팅 방법으로 석영기판 위에 성장하였고 Sol-gel 용액의 온도 변화에 따른 구조적, 광학적 특성을 분석하였다. ZnO 박막의 구조적, 광학적 특성을 조사하기 위해 field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), 그리고 ultraviolet-visible (UV) spectroscopy을 사용하였다. PL 분석에서 ZnO 박막은 orange 계열의 발광을 하였으며, PL spectra는 3.3 eV 부근의 near-band edge emission (NBE) 피크와 2.0 eV 부근의 deep-level emission (DLE) 피크로 이루어져있다. 모든 sol-gel 용액 온도에서, DLE 피크가 NBE 피크보다 더 우세하고 이 DLE 피크는 sol-gel 용액의 온도가 증가함에 따라 점점 증가하다가 감소하는 것을 알 수 있다. 이런 DLE 피크는 산소 공공, 아연 공공, 침입형 산소, 침입형 아연 등과 같은 결함에 의한 것이며, ZnO 박막은 sol-gel 용액의 온도에 따라 결함의 특성이 변화하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.700-702
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• 2009

We present the epitaxial growth of high-quality ZnO layers by chemical vapor transport (CVT) technique on (01-12) sapphire with a ZnO buffer layer growth by metal-organic chemical vapor deposition (MOCVD). The surface of the grown ZnO epitaxial layers has atomically flats and the RMS is 0.11 nm. PL spectrum of as-grown samples exhibits two emissions originated by interactions between photon and free excitons.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.117-123
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• 2014

The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.828-830
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• 2000

Various substrates were compared for the investigation of the optical properties of ZnO thin films. ZnO thin films have been deposited on (100) p-type silicon substrates and (001) sapphire substrates by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm. Oxygen and nitrogen gases were used as ambient gases. Substrate temperatures were varied in the range of 200$^{\circ}C$ to 600$^{\circ}C$ at a fixed ambient gas pressure of 350 mTorr. ZnO films have been deposited on various substrates, such as Si and sapphire wafers. We have investigated substrate effect on the optical and structural properties of ZnO thin films using X-ray diffraction (XRD) and photoluminescence (PL).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.54-57
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266 m. During deposition, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $400^{\circ}C$ and flow rate of 350 sccm, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by diffraction (XRD), SEM and the optical of the ZnO were characterized by photoluminescence (PL).

• Bulletin of the Korean Chemical Society
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• 제19권12호
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• pp.1320-1325
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• 1998

ZnGa2O4: Mn phosphors were prepared by a new chemical process, and their photoluminescence and electron paramagnetic resonance characteristics were investigated. The chemical method showed a low temperature formation of phosphors and a rod-type shape of particles. The strong ultraviolet emission was observed in the undoped ZnGa2O4 phosphor, while strong green emission in the Mn2+-activated ZnGa2O4 phosphor. The green emission intensity of the phosphor prepared by the chemical method was much stronger than that prepared by the conventional method. This difference with preparation methods was interpreted as due to the difference in the distribution of Mn2+ in the host lattice. From EPR results, it was explained that the line intensity of the undoped ZnGa2O4 is associated with the electrical conductivity of this material and the concentration quenching of green luminescence of ZnGa2O4: Mn at higher Mn2+ concentration is attributed to the coupling by exchange interaction between Mn2+ ions.

• KEPCO Journal on Electric Power and Energy
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• 제2권1호
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• pp.97-101
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• 2016

산화아연은 다양한 나노 구조와 특유의 특성으로 인하여 여러 분야에서 많은 관심을 받고있는 물질이다. 산화아연을 합성하는 다양한 방법 중에서, 수열합성법은 간단하고 친환경적인 장점을 가지고 있다. 나노 구조를 가지는 산화아연 박막은 수열합성법을 통하여 FTO 전극 위에 제작되었다. 성장된 산화아연은 X-ray diffraction (XRD)와 Field-emission scanning electron microscopy (FESEM)을 통하여 분석되었다. XRD 분석에서 산화아연 박막이 자연상태의 hexagonal wurtzite 상으로 구성되어 있음을 확인하였으며 SEM 사진에서는 나노 로드 형태를 구성하고 있는 것을 확인할 수 있었다. 본 연구에서는 UV 영역의 흡수 스펙트럼을 분석하여 산화아연이 보이는 365 nm 파장에서의 흡수를 확인하였다. 또한 photoluminescence 방출을 분석한 결과, 424 nm의 band edge emission과 500 nm에서 산화아연의 oxygen vacancies에 의한 방출을 확인하였다. 또한 라만 스펙트럼 분석을 통하여 본 연구진이 제작한 산화아연이 높은 결정성을 가지고 있는 것을 확인할 수 있었다. 이러한 연구를 통하여 다양한 특성을 가진 산화아연의 광촉매적 적용을 기대할 수 있다.

• Rapid Communication in Photoscience
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• 제2권1호
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• pp.9-17
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• 2013

Visible light-sensitive $TiO_2$ and ZnO nanostructure materials have attracted great attention as the promising material for solar energy conversion systems such as photocatalysts for water splitting and environmental purification as well as nano-biosensors. Success of their applications relies on how to control their surface state behaviors related to the exciton dynamics and optoelectronic properties. In this paper, we briefly review some recent works on single nanoparticle photoluminescence (PL) technique and its application to observation of their surface state behaviors which are raveled by the conventional ensemble-averaged spectroscopic techniques. This review provides an opportunity to understand the temporal and spatial heterogeneities within an individual nanostructure, allowing for the potential use of single-nanoparticle approaches in studies of their photoenergy conversion and nano-scale optical biosensing.

• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.93-97
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• 2010

We have studied the effect of the chemical composition of the ZnO nanorod surface on the optical characteristics. The surface was treated with H- and O-plasma at different surface temperatures. The chemical composition of the surface of the ZnO nanorod, being investigated by Auger Electron Spectroscopy(AES), was related to the Photoluminescence(PL) data reported in our previous results. The AES showed the opposite results for the $H_2$ and $O_2$ plasma treatments. The ratio of Zn to O on the surface of the ZnO nanorod increased in the case of $H_2$ plasma, while the composition rate of O increased after $O_2$ plasma treatment. The AES results seems to be correlated to the shift in PL peaks. The increase in the composition rate of Zn on the surface of ZnO nanorod is considered to cause the blue shift of the UV peak. On the contrary, the relative increase of O is considered to cause the red shift in PL peaks.