• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.2
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• pp.101-105
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• 2010

We fabricated FEDs(Filed emission devices) based on ZnO nanowires. The ZnO nanowires were synthesized on Au thin films by hydrothermal method at the temperature of 90[$^{\circ}C$] on hot plate. In order to form tips of the ZnO nanowire, SDS(Sodium Dodecyl Sulfate) was mixed in O.05-0.3[wt%] solution as capping material. After 2 hour growth, we obtained nanowires of chain form The high-purity nanowires showed sharp tip geometry with a wurtzite structure. The field emission properties of the ZnO nanowires were investigated in high vacuum chamber. The turn-on field for the ZnO nanowires was found to be about 4.1[V/${\mu}m$] at a current density of 0.1[${\mu}A/cm^2$].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.530-534
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• 2017

Transparent film heaters employing silver nanowires (Ag NWs) have attracted increasing attention because of their widespread applications. However, the low thermal resistance of Ag NWs limits the maximum operating temperature of the Ag NW film heater. In this study, Ag NW film heaters with high mechanical and thermal stability were successfully developed. The thermal power-out characteristics of the Ag NW heaters were investigated as a function of the Ag NW density. The results revealed that the prepared flexible Ag NW heater possessed high thermal stability over $190^{\circ}C$ owing to ZnO encapsulation. This indicates that the Ag NW film with excellent thermal stability have remarkably high potential for use as electrodes in film heaters operating at high temperatures.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.17.2-17.2
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.11a
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• pp.27.1-27.1
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• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.260-263
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• 2004

During the last few years, there have been many efforts on the fabrication of electronic and optical devices based on semiconductor nanowires. Room-temperature ultraviolet lasing in GaN nanowire, ultraviolet light sensing in ZnO nanowire, and dramatically improved hall mobility in Si nanowire have been demonstrated in this article. The studies on semiconductor nanowire based electronic and optical device is reviewed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.11a
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• pp.24.2-24.2
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• 2008

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.351-351
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• 2007

• Proceedings of the Korean Ceranic Society Conference
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• 2004.04b
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• pp.51.3-51.3
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.622-622
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• 2013

Piezoelectric energy harvesting (PEH) device refers to a power device for acquiring mechanical energy from the environment surrounding us which would otherwise be wasted and for converting it into usable electrical energy. While much work has been done on developing ZnO nanogenerator (NG) with nanowire arrays, there are some issues of not only scaling up its output power but also optimizing structure for operating feasibly in various conditions. Efficiency of NG is highly dependent on fixed orientation. But in many cases, it is not easy to predict where the pressure and vibration may come from. Furthermore, the direction of the applied mechanical stress is usually non-stationary and can be random in various practical applications. Therefore an omnidirectional PEH is needed.In this work, we investigate an omnidirectional PEH device consisting ZnO nanowires. We deposited spiral patterned ZnO seed layer on Kapton film. We deposited thin Cr layer on the ZnO seed layer using DC-sputter to form a passivation layer to retard un-expected growth of ZnO nanowires. We grew ZnO nanowires along the spiral arms using hydrothermal method. ZnO nanowires have been selectively grown from the ZnO sidewall without Cr layer and have the average length of$5{\mu}m$ and the average diameter of 40nm. We reduced the defect in the as-grown ZnO nanowires by O2 plasma using asher and by thermal treatment using RTA. Consequently, each nanowire has different directions to each other. This isotropic design can lead to the omnidirectional power generation. The morphology of NG is characterized with FESEM. Maximum output power of the device is measured by using a picoammeter and a nanovoltmeter.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.2
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• pp.81-86
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• 2008

ZnO nanowires were synthesized by the thermal evaporation method and their growth mechanisms were confirmed by the characterization of the structural features depending on the growth conditions. The increase of vaporization temperature accelerates the growth rate and morphologies of ZnO nanowires were drastically changed at the temperature over 1000$^{\circ}C$, because of changed $CO/CO_2$ partial pressure. Au particles play their role on growth of ZnO nanowire as catalyst at growth temperature over 700$^{\circ}C$. The synthesized ZnO nanowires exhibit blue emission at 380 nm.