• Journal of Environmental Science International
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• v.25 no.8
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• pp.1143-1153
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• 2016

Plant biomass, photosystem II (PSII) photochemical activity, photosynthetic function, and zinc (Zn) accumulation were investigated in a sorghum-sudangrass hybrid (Sorghum bicolor ${\times}$ S. sudanense) exposed to various Zn concentrations to determine the elimination capacity of Zn from soils. Plant growth and biomass of the sorghum-sudangrass hybrid decreased with increasing Zn concentration. Symptoms of Zn toxicity, i.e., withering and discoloration of old leaves, were found at Zn concentrations over 800 ppm. PSII photochemical activity, as indicated by the values of $F_v/F_m$ and $F_v/F_o$, decreased significantly three days after exposure to Zn concentrations of 800 ppm or more. Photosynthetic $CO_2$ fixation rate (A) was high between Zn concentrations of 100-200 ppm ($22.5{\mu}mol$ $CO_2{\cdot}m^{-2}{\cdot}s^{-1}$), but it declined as Zn concentration increased. At Zn concentrations of 800 and 1600 ppm, A was 14.1 and $1.8{\mu}mol$ $CO_2{\cdot}m^{-2}{\cdot}s^{-1}$, respectively. The patterns of stomatal conductance ($g_s$), transpiration rate (E), and water use efficiency (WUE) were all similar to that of photosynthetic $CO_2$ fixation rate, except for dark respiration ($R_d$), which showed an opposite pattern. Zn was accumulated in both above- and below-ground parts of plants, but was more in the below-ground parts. Magnesium (Mg) and iron (Fe) concentrations were significantly low in the leaves of plants, and symptoms of Mg or Fe deficiency, such as a decrease in the SPAD value, were found when plants were treated with Zn concentrations above 800 ppm. These results suggest that the sorghum-sudangrass hybrid is able to accumulate Zn to high level in plant body and eliminate it with its rapid growth and high biomass yield.

• Journal of Adhesion and Interface
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• v.12 no.4
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• pp.133-137
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• 2011

Exfoliated graphite oxide (EGO) was prepared by graphite oxide in an aqueous solution of TMAOH. The hybrid graphene/Zn-Al LDH material was fabricated by the hydrothermal reduction of the solution of EGO, $Zn(NO_3)_2{\cdot}6H_2O$, $Al(NO_3)_3{\cdot}9H_2O$, urea, and trisodium citrate. That is, metal ions were absorbed on the surface of EGO, and Zn-Al LDH material was randomly dispersed on the surface of graphene along with a reduction process of EGO to graphene by hydrothermal treatment. The composition, morphology, and thermal property of the obtained graphene-based hybrid material were studied by FE-SEM, EDX, TEM, FT-IR, XRD, TGA, and DSC.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.317-317
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• 2010

ZnO나노와이어는 높은 투과도, 화학 및 열적 안정성을 가지며, 유기태양전지에 적용하였을 때 Active Layer의 표면적 증가, 전자의 수집 및 전달에 용이한 장점가지고 있어 하이브리드 유기 태양전지에 적용되고 있다. ZnO나노와이어와 P3HT/PCBM을 사용한 하이브리드 유기태양전지는 Active Layer의 열처리 온도를 변화시켜 ITO/AZO/ZnO wire/PCBM:P3HT/PEDOT:PSS/Ag구조로 제작되었다. ZnO나노와이어는 AZO를 Seed로 사용하고 Znc nitrate hydrate와 hexamethylenetetramine을 혼합하여 수열합성법으로 성장 후, P3HT:PCBM, PEDOT:PSS을 Spin Coating법으로 형성하였다. UV-vis와 Solar simulator를 통하여 Active Layer의 열처리 온도에 따른 태양전지의 특성을 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.256-256
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• 2012

Oxide semiconductors such as zinc tin oxide (ZTO) or indium gallium zinc oxide (IGZO) have attracted a lot of research interest owing to their high potential for application as thin film transistors (TFTs) [1,2]. However, the instability of oxide TFTs remains as an obstacle to overcome for practical applications to electronic devices. Several studies have reported that the electrical characteristics of ZnO-based transistors are very sensitive to oxygen, hydrogen, and water [3,4,5]. To improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistor, back channel passivation layer is essential for the long term bias stability. In this study, we investigated the instability of amorphous indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) by the back channel contaminations. The effect of back channel contaminations (humidity or oxygen) on oxide transistor is of importance because it might affect the transistor performance. To remove this environmental condition, we performed vacuum seasoning before the deposition of hybrid passivation layer and acquired improved stability. It was found that vacuum seasoning can remove the back channel contamination if a-IGZO film. Therefore, to achieve highly stable oxide TFTs we suggest that adsorbed chemical gas molecules have to be eliminated from the back-channel prior to forming the passivation layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.258-263
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• 2021

ZnO varistor is a semiconductor device which can serve to protect the circuit from surge voltage because its non-linear I-V characteristics by controlling the microstructure of grain and grain boundaries. In order to obtain desired electrical properties, it is important to control microstructure evolution during the sintering process. In this research, we defined a dataset composed of process conditions of sintering and relative permittivity of sintered body, and collected experimental dataset with DOE. Meta-models can predict permittivity were developed by learning the collected experimental dataset on various machine learning algorithms. By utilizing the meta-model, we can derive optimized sintering conditions that could show the maximum permittivity from the numerical-based HMA (Hybrid Metaheuristic Algorithm) optimization algorithm. It is possible to search the optimal process conditions with minimum number of experiments if meta-model-based optimization is applied to ceramic processing.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.3
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• pp.193-199
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• 2013

In this work, thin film type Cu/ZnO nanostructure catalysts were fabricated by several synthetic routes in order to maximize the performance of the micro reforming system. For this work, various Cu/ZnO nanostructure catalysts could be synthesized by means of four approaches which are chemical vapor method, wet solution method and their hybrid method. The reforming performance of these as-synthetic catalysts was evaluated as compared to the conventional catalysts. Among the as-synthetic nanostructures, sphere type catalysts with specific surface of $18.6m^2/g$ showed the best performance of hydrogen production rate of 30ml/min at the feed rate of 0.2ml/min. This work will give the first insight on thin film type Cu/ZnO nanostructure catalyst for micro reforming system for hydrogen production of portable electronic systems.

• Advances in nano research
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• v.14 no.2
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• pp.201-210
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• 2023

A ZnO/poly (amide-imide) hybrid nanocomposite film with different weight percentages of Zinc oxide (ZnO) nanoparticles is synthesized and characterized in this paper. A two-step reaction successfully synthesized a new kind of heteroaromatic diamine with bulky pendant groups. In order to produce 3, 5-dinitro-3, 3-bis (4-(4-Nitrophenoxy) phenyl) -2- benzofuran-1-one, 3, 3'-bis (4-hydroxyphenyl) benzofuran-1-one and 3'-bis (4-hydroxyphenyl) benzofuran-1-one were combined with 3'-bis (3-hydroxyphenyl) benzofuran-1-one. The obtained dinitro was then reduced by zinc dust and hydrochloric acid. The reaction of 4, 4^* carbonyl diphthalic anhydride with amino acid L-alanine in acetic acid leads to the production of very high yields of chiral diacid monomer. As a result of the direct polymerization of these monomers, new optically active polymers were formed (amide-imide). In order to synthesize poly (amide-imide)/ZnO nanocomposites with different weight percentages (2, 4, 6, 8, and 10%), PAI and ZnO nanoparticles were combined using ultrasonication SEM, Fourier transform infrared spectroscopy, X-ray diffraction and thermal gravimetry were used to characterize the PAI films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.152-152
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• 2009

유기태양전지 Solvent인 1-2-Dichlorobenzene(DCB)에 1-Bromonaphtalene(BN)을 첨가하여 Air분위기에서 ZnO film을 이용한 유/무기 복합 태양전지를 만들었다. 셀의 구조는 ITO/ZnO nanofilm/Poly(3-hexylthiophene(P3HT):[6,6]-Phenyl C60-Butyric acid methyl ester(PCBM)/PEDOT:PSS/Ag로 제작했다. 두께 70nm ZnO film은 전기화학적 방법으로 ITO위에 전착하였다. AM1.5조건에서 Solar simulator로 측정한 결과 BN을 첨가한 셀에서 Jsc값이 증가되었다. Jsc값의 증가는 BN이 결정화를 향상시켜 효율이 증가됨을 확인하였다.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.413-417
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• 2018

The $Li_4Ti_5O_{12}$ of anode material for the hybrid capacitor was coated using $CePO_4$, $M_3(PO_4)_2$ (M=Mg, Zn). The capacitance of phosphate coated $Li_4Ti_5O_{12}$ was found to be lower than that of $Li_4Ti_5O_{12}$, whereas the equivalent series resistance was higher than that of $Li_4Ti_5O_{12}$. With an increase in cycle number, the base of cylindrical cell exhibited swelling due to gas generated from the reaction between $Li_4Ti_5O_{12}$ and electrolyte. The swelling cycle number of phosphate coated $Li_4Ti_5O_{12}$ was higher than that of $Li_4Ti_5O_{12}$ due to improvement in electrochemical stability. Based on the results, it is proposed that phosphate coating can be employed as a barrier layer to control the gassing reaction by isolating the $Li_4Ti_5O_{12}$ particle from electrolyte solution.