• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.1043-1047
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• 2005

To investigate the electrical properties of the ZnO films which are interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $300^{\circ}C$ and 5.2 mTorr, and the purity of target is ZnO 5N. The thickness of ZnO thin films was about $2.1\;{\mu}m$ at SEM analysis after sputtering process. Phosphorus (P) and arsenic (As) were diffused into the undoped ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and $700^{\circ}C$ during 3 hr. We found the diffusion condition of the conductive ZnO films which had n- and p-type properties. Our ZnO thin film has not only very high carrier concentration of above $10^{17}/cm^3$ but also low resistivity of below $2.0\times10^{-2}\;{\Omega}cm$.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.362-367
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• 2005

ZnO films were deposited on MgO substrates (ZnO/MgO) by ultrasonic spray pyrolysis. Substrate temperature varied from $250^{\circ}C$ to $350^{\circ}C$. The crystallographic properties and surface morphologies of the ZnO/MgO films were studied by X-ray diffraction and scanning electron microscopy. The properties of photoluminescence (PL) for the films were investigated by dependence of PL spectra on the substrate temperature and the annealing temperature. The ZnO/MgO films prepared at $350^{\circ}C$ showed the strongest Ultraviolet light emission peak at 18 K and 300 K among the films in this study. The annealing process increases the visible light emission, which is due to the increased oxygen vacancies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1057-1059
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• 2002

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at $300^{\circ}C$ in oxygen ambient pressure. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. Also, the optical and structural properties changed by Si layer in ZnO thin film. The optical and structural properties of Si-doped ZnO thin films were characterized by PL(Photoluminescence) and XRD(X-ray diffraction method) respectively. Electrical properties were measured by van der Pauw Hall measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.140-142
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• 2003

ZnO thin films are demanded for device applications, so ZnO buffer layer was used to improve for good properties of ZnO thin film. In this study, the structural, electrical and optical properties of ZnO thin films deposited with various buffer thickness was investigated by X-ray diffraction (XRD), Hall measurements, Photoluminescence(PL). ZnO buffer layer and ZnO thin films on sapphire($Al_{2}O_{3}$) substrate have been deposited $200^{\circ}C$ and $400^{\circ}C$ respectively by pulsed laser deposition. It is observed the variety of lattice constant of ZnO thin film by (101) peak position shift with various buffer thickness. It is founded that ZnO thin film with buffer thickness of 20 nm was larger resistivity of 200 factor and UV/visible of 2.5 factor than that of ZnO thin films without buffer layer. ZnO thin films with buffer thickness of 20 nm have shown the most properties.

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.289-292
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• 2019

Transparent and conducting titanium doped indium oxide (TIO) thin films were deposited by RF magnetron sputtering on zinc oxide (ZnO)-coated glass substrates to investigate the effect of the ZnO buffer layer on optical and electrical properties of TIO/ZnO bi-layered films. TIO 90 nm / ZnO 10 nm films having a lower resistivity (3.09×10^-3 Ωcm) and a higher visible transmittance (80.3%) than other TIO/ZnO films were prepared in this study. Figure of merit results indicate that a 10 nm thick ZnO thin film is an effective buffer layer that enhances optical transmittance and electrical conductivity of TIO films without intentional substrate heating or post-deposition annealing.

• The Korean Journal of Ceramics
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• v.7 no.2
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• pp.85-92
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• 2001

Thin films of ZnO and Al doped ZnO were prepared by rf magnetron sputter techniques. When the oxygen fraction in Ar-O$_2$ sputter gas was about 2.0%, the films exhibited the composition of Zn:O=1.05:1. The films prepared at 250 W contain larger grains than the films grown at 100 W. However, high deposition rate seems to deteriorates the crystallinity as well as Al-substitution, resulting in lower concentration of mobile electrons. The Al-doped ZnO films which were deposited at $500^{\circ}C$ show resistance of 1$\times$10$^-2$ Wcm; optical band gap of the films ranges from 3.25 to 3.40 eV. These electrical and optical features are related with microstructural as well as crystalline characteristics of the films.

• Journal of IKEEE
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• v.21 no.4
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• pp.404-407
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• 2017

We investigated the microstructure, electrical and optical characteristics of ZnO, AZO and ITO films using aerosol deposition process. As gas consumption increased, the electrical and optical characteristics of ZnO, AZO and ITO films were improved, and electrical and optical characteristics of ZnO, AZO and ITO films with a thickness of 400 nm were successfully fabricated on PET substrates at room temperature. The mechanical flexibility durability test shows that the ZnO films can withstand 5,000 cycles and AZO and ITO films occurs to crack in films with degradation of resistance and transmittance. Even though the AZO and ITO films shows slightly lower durability than the ZnO films, this is expected to improve performance of films through optimized processing condition and particle size control.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.145-146
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• 2006

The most Important research topic in the development of ZnO LED and LD is the production of p-type ZnO thin film that has minimal stress with outstanding stoichiometric ratio. In this study, Phosphorus diffused into the undoped ZnO thin films using the ampoule-tube method for the production of p-type znO thin films. The undoped ZnO thin films were deposited by RF magnetron sputtering system on $GaAs_{0.6}P_{0.4}$/GaP and Si wafers. 4N Phosphorus (P) was diffused into the undoped ZnO thin films in ampoule-tube which was performed and $630^{\circ}C$ during 3hr. We found the diffusion condition of the conductive ZnO films which had p-type properties with the highest mobility of above 532 $cm^2$/Vs compared with other studies PL spectra measured at 10K for the purpose of analyzing optical properties of p-type ZnO thin film showed strong PL intensity in the UV emission band around 365nm ~ 415nm and 365nm ~ 385nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.106-106
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• 2009

Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.

• Applied Science and Convergence Technology
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• v.26 no.2
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• pp.30-33
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• 2017

ZnO thin films which were deposited by RF magnetron sputtering system were annealed by furnace and insitu heat treatment methods. We investigated the effect of heat treatment method on physical properties of ZnO thin films. The structural and optical properties of ZnO thin films were improved by heat treatment. Through the annealing treatment of ZnO film by furnace, the good crystallinity and ultraviolet emission were obtained. These results are attributed to the improved formation of Zn-O bond in ZnO thin film annealed at by furnace. We confirm that the formation of Zn-O bond plays an important role in obtaining the excellent structural and optical properties of ZnO thin films.