• Title/Summary/Keyword: ZnO films

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The emissivity and opto-electrical properties of ZnO/Cu/ZnO thin films for the vehicle applications (ZnO/Cu/ZnO 박막의 차량용 저방사 및 전기광학적 특성 연구)

  • Yeon-Hak Lee;Sun-Kyung Kim;Tae-Yong Eom;Yong-Ha Jeong;Sang-Woo So;Young-Gil Son;Dong-Il Son;Daeil Kim
    • Journal of the Korean institute of surface engineering
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    • v.56 no.6
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    • pp.451-456
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    • 2023
  • Transparent conducting films having a three layered structure of ZnO/Cu/ZnO (ZCZ) were deposited onto the glass substrates by using RF and DC magnetron sputtering at room temperature. The emissivity and opto-electrical properties of the films were investigated with a varying thickness(5, 10, 15 nm) of the Cu interlayer. With increasing the Cu thickness to 15 nm, the films showed a enhanced electrical properties. Although ZnO 30/Cu 15/ZnO 30 nm film shows a lower resistivity of 5.2×10-5 Ωcm, it's visible transmittance is deteriorated by increased optical absorbtion of the films. In addition, X-ray diffraction patterns indicated that the insertion of Cu interlayer improve the grain size of ZnO films, which is favor for the electrical and optical properties of transparent conducting films. From the observed low emissivity of the films, it is concluded that the ZCZ thin films with optimal thickness of Cu interlayer can be applied effectively for the car's window coating materials.

Comparison on Properties of ZnO Thin Films Grown by RF Magnetron Sputtering on Various Oxide Substrates (다양한 산화물 기판 위에 RF 마그네트론 스퍼터링 방법으로 성장된 ZnO 박막의 특성 비교)

  • Lee, Jae-Wook;Jung, Chul-Won;Han, Seok-Kyu;Choi, Jun-Ho;Hong, Soon-Ku;Cho, Hyung-Koun;Song, Jung-Hoon;Lee, Jeong-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.4
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    • pp.289-293
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    • 2007
  • ZnO thn films are grown on five kinds of oxide substrates including $c-Al_2O_3(0001),\;r-Al_2O_3(01-12)$, MgO(100), MgO(111), $NdGaO_3(110)$ by rf magnetron sputtering and effects substrate types on properties of ZnO thin films ate investigated. In order to compare the substrate effects one growth condition is selected and all the films are grown by the same growth condition. Structural and optical properties of the ZnO films ate different depending on the substrates although the films ate not epitaxial but polycrystalline. The ZnO film grown on $NdGaO_3(100)$ substrate shows the best overall properties among the films grown on substrates investigated in this study.

Preparation and Properties of $Zn_{1-x}Mg_xO$ Thin Films Prepared by Pulsed Laser Deposition Method (펄스 레이저 증착법을 이용한 $Zn_{1-x}Mg_xO$ 박막의 제작과 특성연구)

  • Suh, Kwang-Jong
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.1 s.34
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    • pp.73-76
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    • 2005
  • To widen the band gap of ZnO, we have investigated $Zn_{1-x}Mg_xO(ZMO)$ thin films prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$. From X-ray diffraction patterns, ZMO films show only the (0002) and (0004) diffraction peaks. It means that the flints have the wurtzite structure. Segregation of ZnO and MgO phases is found in the films with x=0.59. All the samples are highly transparent in the visible region and have a sharp absorption edge in the UV region. The shift of absorption edge to higher energy is observed in the films with higher Mg composition. The excitonic nature of the films is clearly appeared in the spectra for all alloy compositions. The optical band-gap ($E_g$) of ZMO films is obtained from the ${\alpha}^2$ vs Photon energy plot assuming ${\alpha}^2\;\propto$ (hv - $E_g$), where u is the absorption coefficient and hv is the photon energy. The value of $E_g$ increases up to 3.72 eV for the films with x=0.35. It is important to adjust Mg composition control for controlling the band-gap of ZMO films.

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The Effects of Oxygen Partial Pressure and Post-annealing on the Properties of ZnO-SnO2 Thin Film Transistors (ZnO-SnO2 투명박막트랜지스터의 특성에 미치는 산소분압 및 후속열처리의 영향)

  • Ma, Tae-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.4
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    • pp.304-308
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    • 2012
  • Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-$SnO_2$ films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-$SnO_2$ films. To study the post-annealing effects on the properties of TTFT, ZnO-$SnO_2$ films were annealed at $200^{\circ}C$ or $400^{\circ}C$ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-$SnO_2$ films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm $Si_3N_4$ film grown on 100 nm $SiO_2$ film was used as gate dielectrics. The mobility, $I_{on}/I_{off}$, interface state density etc. were obtained from the transfer characteristics of ZnO-$SnO_2$ TTFTs.

Transient Behaviors of ZnO Thin Films on a Transparent, Flexible Polyethylene Terephthalate Substrate

  • Kim, Yongjun;Lee, Hoseok;Yi, Junsin;Noh, Jinseo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.179.1-179.1
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    • 2015
  • Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates were investigated in the very thin thickness range of 20 to 120 nm. A very unusual transition phenomenon, in which electrical resistance increases with an increase in film thickness, was observed. From structural and compositional analyses, this transition behavior was explained to arise from metallic Zn agglomerates dispersed in non-crystalline Zn-O matrix. It was unveiled that film thickness more than 80 nm is required for the development of hexagonal crystal structure of ZnO. ZnO films on PET substrates exhibited high optical transmittance and good mechanical flexibility in the thickness range. The results of this study would provide a valuable guideline for the design of ZnO thin films on organic substrates for practical applications.

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Deposition of ZnO thin films by RF magnetron sputtering (RF 마그네트론 스퍼터링법을 이응한 ZnO 박막 증착에 판한 연구)

  • 강창석;김영진
    • Korean Journal of Crystallography
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    • v.2 no.2
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    • pp.1-6
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    • 1991
  • ZnO thin films were deposited on p-Si(100) and Coming glass 7059 by f magnetron sputtering mothod. The effect of deposition parameters on the electrical, structural and optical properties were investigated. Highly c-axis oriented ZnO thin films were deposited at high rf power. Standard deviation(σ) of X-ray rocking curve of peak at 26θ=34,4˚ ranged from 6.8˚ to 7.2˚, depending on the deposition condition. ZnO thin films deposited on glass substrate eihibited 80% transmittance in the visible range, regardless of the deposition parameters. Resistivity of ZnO thin films was significantly affected by f power and Ar pressure, and ranged widely from 3×102 to 2×109 Ω.

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A Study on the Characteristic of n-ZnO:In/p-Si (111) Heterostructure by Pulsed Laser Deposition (PLD 법으로 증착된 n-ZnO:In/p-Si (111) 이종접합구조의 특성연구)

  • Jang, Bo-Ra;Lee, Ju-Young;Lee, Jong-Hoon;Kim, Jun-Je;Kim, Hong-Seung;Lee, Dong-Wook;Lee, Won-Jae;Cho, Hyeong-Kyun;Lee, Ho-Seong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.5
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    • pp.419-424
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    • 2009
  • ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

Preparation and Characterization of Al-doped ZnO Transparent Conducting Thin Film by Sol-Gel Processing (솔-젤법에 의한 Al-doped ZnO 투명전도막의 제조 및 특성)

  • Hyun, Seung-Min;Hong, Kwon;Kim, Byong-Ho
    • Journal of the Korean Ceramic Society
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    • v.33 no.2
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    • pp.149-154
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    • 1996
  • ZnO and Al-doped ZnO thin films were prepared by sol-gel dip-coating method and electrical and optical properties of films were investigated. Using the zinc acetate dihydrate and acetylaceton(AcAc) as a chelating agent stable ZnO sol was synthesized with HCl catalyst. Adding aluminium chloride to the ZnO sol Al-doped ZnO sol could be also synthesized. As Al contents increase the crystallinity of ZnO thin film was retarded by increased compressive stress in the film resulted from the difference of ionic radius between Zn2+ and Al3+ The thickness of ZnO and Al-doped ZnO thin film was in the range of 2100~2350$\AA$. The resistivity of ZnO thin films was measured by Van der Pauw method. ZnO and Al-doped ZnO thin films with annealing temperature and Al content had the resistivity of 0.78~1.65$\Omega$cm and ZnO and Al-doped ZnO thin film post-annealed at 40$0^{\circ}C$ in vacuum(5$\times$10-5 torr) showed the resistivity of 2.28$\times$10-2$\Omega$cm. And the trans-mittance of ZnO and Al-doped ZnO thin film is in the range of 91-97% in visible range.

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A study on p-type ZnO thin film characterization and the stability from oxygen fraction variation ($O_2$ fraction 변화에 따른 undoped p-type ZnO 특성 및 안정화에 대한 연구)

  • Park, Hyeong-Sik;Jang, Kyung-Soo;Jung, Sung-Wook;Jeong, Han-Uk;Yun, Eui-Jung;Yi, J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.143-143
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    • 2010
  • In this study, we demonstrate that ZnO deposited onto $SiO_2$ substrates by magnetron sputtering produces p-type ZnO at higher $O_2$ pressure and n-type ZnO at lower $O_2$ pressure. We also report the effect of hydrogen peroxide ($H_2O_2$) on the stability of undoped ZnO thin films. The films were immersed in 30% $H_2O_2$ for 1 min at $30^{\circ}C$ and annealed in $O_2$at $450^{\circ}C$. The carrier concentration, mobility. and conductivity were measured by a Hall effect measurement system. The Hall measurement results for ZnO films untreated with $H_2O_2$ but annealed in $O_2$ indicate that oxygen fraction greater than ~0.5 produces undoped p-type ZnO films, whereas oxygen fraction less than ~0.5 produces undoped n-type ZnO films. This is attributed to the fact that the oxygen vacancies ($V_o$) decrease and the oxygen interstitials ($O_i$) or zinc vacancies ($V_{Zn}$) increase with increasing oxygen atoms incorporated into ZnO films during deposition and $O_2$ post-annealing.

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Synthesis of p-Type ZnO Thin Film Prepared by As Diffusion Method and Fabrication of ZnO p-n Homojunction

  • Kim, Deok Kyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.6
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    • pp.372-375
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    • 2017
  • ZnO thin films were deposited by RF magnetron sputtering and then diffused by using an As source in the ampouletube. Also, the ZnO p-n homojunction was made by using As-doped ZnO thin films, and its properties were analyzed. After the As doping, the surface roughness increased, the crystal quality deteriorated, and the full width at half maximum was increased. The As-doped ZnO thin films showed typical p-type properties, and their resistivity was as low as $2.19{\times}10^{-3}{\Omega}cm$, probably because of the in-diffusion from an external As source and out-diffusion from the GaAs substrate. Also, the ZnO p-n junction displayed the typical rectification properties of a p-n junction. Therefore, the As diffusion method is effective for obtaining ZnO films with p-type properties.