• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.59-65
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• 2006

Al-doped and F-doped ZnO (ZnO : Al & ZnO : F) thin films were coated onto glass substrate by sol-gel method. These films showed c-axis orientation in common, but different I(002)/[I(002) + I(101)] and FWHM (full width at half-maximum). In particular, the grain size of the ZnO : Al films decreased with the increase in the Al-doping concentration, while for the ZnO : F films the grain siae increased up to F 3 at% and then decreased. For the electrical properties, Hall effect measurement was used. The resistivity of the ZnO : Al films and the ZnO : F films were, respectively, $2.9{\times}10^{-2}{\Omega}cm$ at Al 1 at% and $3.3{\times}10^{-1}{\Omega}cm$ at F 3 at%. Moreover compared with ZnO:Al films, ZnO:F films have lower carrier concentration (ZnO : Al $4.8{\times}10^{18}cm^{-3}$, ZnO : F $3.9{\times}10^{16}cm^{-3}$) and higher mobility (ZnO : Al $45cm^2/Vs$, ZnO : F $495cm^2/Vs$). For average optical transmittances, ZnO : Al thin films have $86{\sim}90%$ and ZnO : F films have $77{\sim}85%$ comparatively low.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.309-310
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• 2006

In this paper, frequency characteristic of FBAR was studied as a function of annealing temperature. we have used Li dopant to enhance electrical properties of ZnO thin film. Li:ZnO thin film was deposited on Al(300 nm)/$SiO_2$(500 nm)/Si($500\;{\mu}m$) and each layer was patterned. Thermal treatment was executed in range of between 300 and $600^{\circ}C$ in $O_2$ ambient. We observed that the resistivity of ZnO is enhanced under the influence of Li doping and return loss in FBAR frequency properties is improved through annealing.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.489-493
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• 1996

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.203.2-203.2
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• 2013

Hydrothermally grown ZnO nanorods were synthesized with various Sn contents on quartz substrates, ranging from 0 to 2.5 at% in increment 0.5 at%. Scanning electron microscopy (SEM) and ultraviolet (UV)- visible spectroscopy were used to determine the effect of Sn doping on the structural and optical properties. In the SEM images, the nanorods have hexagonal wurzite structure and the diameter of the nanorods increase with increase in the Sn contents. The optical parameters of the Sn-doped ZnO nanorods such as the absorption coefficients, optical bandgaps, Urbach energies, refractive indices, dispersion parameters, dielectric constants, and optical conductivities were gained from the transmittance and reflectance results. In the PL spectra, the NBE peaks in the UV region decrease and blue-shift with increase in the Sn contents. In addition, the DLE peaks in the visible region of the nanorods shift toward low-energy region when the ZnO nanorods doped with various Sn contents.

• Journal of IKEEE
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• v.17 no.2
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.738-746
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• 2004

Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.442-443
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• 2007

Al-N co-doped ZnO films were fabricated on n-Si (100) and homo-buffer layers in the mixture of oxygen and nitrogen at $450^{\circ}C$ by magnetron sputtering. Target was ZnO ceramic mixed with $2wt%Al_2O_3$. XRD spectra show that as-grown and $600^{\circ}C$ annealed films are prolonged along crystal c-axis. However they are not prolonged in (001) plane vertical to c-axix. The films annealed at $800^{\circ}C$ are not prolonged in any directions. Codoping makes ZnO films unidirectional variation. XPS show that Al content hardly varies and N escapes with increasing annealing temperature from $600^{\circ}C\;to\;800^{\circ}C$. The electric properties of as-grown films were tested by Hall Effect with Van der Pauw configuration show some of them to be p-type conduction.

• Korean Journal of Materials Research
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• v.2 no.5
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• pp.360-365
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• 1992

Ga-doped polycrystalline ZnO films on glass substrates were prepared by sputtering the targets, which had been prepared by sintering discs consisting of ZnO powder and various amounts of G$a_2O_3$, to investigate the effects of gallium doping and sputtering conditions on electrical properties. Optimizing the RF power density, argon gas pressure and gallium content, transparent Ga-doped ZnO films with resistivity less than 1$0^{-3}$ohm-cm are obtained. Electron concentration of undoped and Ga-doped ZnO films are order of $10^{18}$, $10^{21}$/c$m^2$respectively. After heat treatment in air and $N_2atmosphere, $ the resistivity of Ga-doped ZnO films increases by about two orders of magnitude. The optical transmission is above 80% in the visible range and the optical band widens as the Ga content increases.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1256_1257
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• 2009

We have grown, for the first time to our knowledge, N-doped ZnO thin films on sapphire substrate by employing novel dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting to find a dominant acceptor-bound exciton peak ($A^0X$) that indicates the successful p-type doping of ZnO with N.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.142-143
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• 2012

ZnO는 전기적, 광학적 특성으로 인해 여러 연구 분야에서 주목을 받고 있으며, F의 도핑농도에 따른 특성을 알아보기 위해 Si 기판 위에 스핀코팅법으로 F-ZnO 막을 성장 시켰다. 도핑 농도와 열처리 온도에 따른 구조적 및 광학적 특성을 조사하기 위해 scanning electron microscopy, X-ray diffraction (XRD), 그리고 photoluminescence (PL)를 이용하였다. PL 측정 결과 도핑농도가 3%일 때, NBE 피크가 가장 큰 세기를 보였으며, 열처리가 증가함에 따라서 피크의 세기가 증가하였다.