Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Frequency characteristics of Li doped ZnO thin film resonator annealed by various temperatures

Li:ZnO를 이용하여 제조한 FBAR의 열처리 온도에 따른 주파수 특성

  • Kim, Bong-Seok (Department of Information and Communication, Sungkyunkwan University) ;
  • Kim, Eung-Kwon (Department of Information and Communication, Sungkyunkwan University) ;
  • Hwang, Hyun-Suk (Department of Information and Communication, Sungkyunkwan University) ;
  • Kang, Hyun-Il (Department of Information and Communication, Sungkyunkwan University) ;
  • Lee, Kyu-Il (Department of Information and Communication, Sungkyunkwan University) ;
  • Lee, Tae-Yong (Department of Information and Communication, Sungkyunkwan University) ;
  • Song, Joon-Tae (Department of Information and Communication, Sungkyunkwan University)
  • 김봉석 (성균관대학교 정보통신공학과) ;
  • 김응권 (성균관대학교 정보통신공학과) ;
  • 황현석 (성균관대학교 정보통신공학과) ;
  • 강현일 (성균관대학교 정보통신공학과) ;
  • 이규일 (성균관대학교 정보통신공학과) ;
  • 이태용 (성균관대학교 정보통신공학과) ;
  • 송준태 (성균관대학교 정보통신공학과)
  • Published : 2006.06.22
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Abstract

In this paper, frequency characteristic of FBAR was studied as a function of annealing temperature. we have used Li dopant to enhance electrical properties of ZnO thin film. Li:ZnO thin film was deposited on Al(300 nm)/$SiO_2$(500 nm)/Si($500\;{\mu}m$) and each layer was patterned. Thermal treatment was executed in range of between 300 and $600^{\circ}C$ in $O_2$ ambient. We observed that the resistivity of ZnO is enhanced under the influence of Li doping and return loss in FBAR frequency properties is improved through annealing.

Keywords