• 한국세라믹학회지
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• 제37권8호
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• pp.774-780
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• 2000

In order to improve luminescence prperty of phosphors, we have synthesized Zn2SiO4:Mn phosphors by a new chemical synthetic route, i.e., the homogeneous precipitation method. This method has featured that the formation of phosphoris completed at relatively low temperature of 105$0^{\circ}C$ and the particle morphology exhibits spherical shape to be well-dispersed and uniform size. At all the Mn concentration explored, phosphors prepared by this method have exhibited the improved emission intensities. In particular, the emission intensities of phosphors with Mn doping contents between 1 at% and 3.5 at% were higher about 40% than that of commercial phosphor. On the other hand, the decay time has been decreased from 23 ms to 11 ms with increasing Mn concentration. In addition, the phosphor composition containing 3 at% Mn has displayed the most saturated color.

• Transactions on Electrical and Electronic Materials
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• 제10권5호
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• pp.152-155
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• 2009

The microstructure and the electrical properties of a ZnO varistor, which was composed of a ZnO-$Bi_2O_3$-$Sb_2O_3$-CoO- $MnO_2$ -NiO-$Nd_2O_3$ system, were investigated at various $Y_2O_3$ addition concentrations. $Y_2O_3$ played a role in the inhibition of the grain growth. As the $Y_2O_3$ content increased, the average grain size decreased from $6.8{\mu}m$ to $4{\mu}m$, and the varistor voltage($V_{1mA}$) greatly increased from 275 to 400 V/mm. The nonlinearity coefficient ($\alpha$) decreased from 72 to 65 with increasing $Y_2O_3$ amount. On the other hand, the leakage current ($I_L$) increased from 0.2 to 0.9 ${\mu}A$. These results confirmed that doping the varistors with $Y_2O_3$ is a promising production route for production of a higher fine-grained varistor voltage ($V_{1mA}$) which can dramatically reduce the size of the varistors.

• 한국재료학회지
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• 제19권3호
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• pp.142-150
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• 2009

In this paper, non-treated ACF (Activated Carbon Fiber) /$TiO_2$ and Zn-treated ACF/$TiO_2$ were prepared. The prepared composites were characterized in terms of their structural crystallinity, elemental identification and photocatalytic activity. XRD patterns of the composites showed that the non-treated ACF/$TiO_2$ composite contained only typical single and clear anatase forms while the Zn-treated ACF/$TiO_2$ contained a mixed anatase and rutile phase with a unique ZnO peak. SEM results show that the titanium complex particles are uniformly distributed on and around the fiber and that the titanium complex particles are more regularly distributed on and around the ACF surfaces upon an increase of the $ZnCl_2$ concentration. These EDX spectra show the presence of peaks from the C, O and Ti elements. Moreover, peaks of the Zn element were observed in the Zn-treated ACF/$TiO_2$ composites. The prominent photocatalytic activity of the Zn-treated ACF/$TiO_2$ can be attributed to the three different effects of photo-degradation: doping, absorptivity by an electron transfer, and adsorptivity of porous ACFs between the Zn-$TiO_2$ and Zn-ACF.

• 한국결정성장학회지
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• 제6권4호
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• pp.532-542
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• 1996

Floating zone(FZ)법으로 육성하고 annealing한 undoped $LiNbO_3$ 단결정 및 MgO 또는 ZnO를 첨가한 $LiNbO_3$ 단결정의 전기적,광학적 특성을 조사하였다. 전기전도도, 유전율 및 전이온도, 전기.기계결합계수등의 전기적 특성과 광투과율, 굴절율 등의 광학적 특성을 측정하였으며, 비선형 광학특성의 척도라 할 수 있는 비선형 굴절율을 이론적으로 계산하였다. Undoped $LiNbO_3$ 단결정과 MgO 또는 ZnO를 첨가한 $LiNbO_3$ 단결정의 전기적, 광학적 특성을 비교함으로서 MgO 또는 ZnO의 첨가가 $LiNbO_3$ 단결정의 전기적 및 광학적 특성에 미치는 영향을 조사하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.53-54
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• 2006

Arsenic doped p-type ZnO thin films have been realized on intrinsic (100) GaAs substrate by RF magnetron sputtering and thermal annealing treatment. p-Type ZnO exhibits the hole concentration of $9.684{\times}10^{19}cm^3$, resistivity of $2.54{\times}10^{-3}{\Omega}cm$, and mobility of $25.37\;cm^2/Vs$. Photoluminescence (PL) spectra of As doped p-type ZnO thin films reveal neutral acceptor bound exciton ($A^{0}X$) of 3.3437 eV and a transition between free electrons and acceptor levels (FA) of 3.2924 eV. Calculated acceptor binding energy ($E_A$) is about 0.1455 eV. Thermal activation and doping mechanism of this film have been suggested by using X-ray photoelectron spectroscopy (XPS). p-Type formation mechanism of As doped ZnO thin film is more related to the complex model, namely, $As_{Zn}-2V_{Zn}$, in which the As substitutes on the Zn site, rather than simple model, Aso, in which the As substitutes on the O site. ZnO-based p-n junction was fabricated by the deposition of an undoped n-type ZnO layer on an As doped p-type ZnO layer.

• 한국재료학회지
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• 제21권9호
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• pp.486-490
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• 2011

Nano-indium-coated ZnO:In thick films were prepared by a hydrothermal method. ZnO:In gas sensors were fabricated by a screen printing method on alumina substrates. The gas sensing properties of the gas sensors were investigated for hydrocarbon gas. The effects of the indium concentration of the ZnO:In gas sensors on the structural and morphological properties were investigated by X-ray diffraction and scanning electron microscopy. XRD patterns revealed that the ZnO:In with wurtzite structure was grown with (1 0 0), (0 0 2), and (1 0 1) peaks. The quantity of In coating on the ZnO surface increased with increasing In concentration. The sensitivity of the ZnO:In sensors was measured for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of the ZnO:In sensors was observed at the In 6 wt%. The response and recovery times of the 6 wt% indiumcoated ZnO:In gas sensors were 19 s and 12 s, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.391-391
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• 2010

The stability enhancement of Znic oxide thin film transistor deposited by PLD-DBD has been reported here using the bias temperature stress test. Znic oxide (ZnO) thin films were deposited on $SiO_2$/Si (100) by pulsed laser deposition method with and without dielectric barrier discharge (DBD) method. The DBD is the efficient method to adopt the nitrogen ions into the thin films. The TFT characteristics of ZnO TFTs with and without Nirogen (N) doping show similar results with $I_{on/off}$ of $10^5{\sim}10^6$. However. the bias temperature stress (BTS) test of N-doped ZnO TFT with DBD shows higher stability than that of ZnO TFT.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.143-146
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and discharge power on the electrical, optical and morphological properties were investigated experimentally. The consideration on the effect of doping amounts of Al on the electrical and optical properties of ZnO thin film were also carried out. ZnO:Al films with the optimum growth conditions showed resistivity of $9.42{\times}10^{-4}\;{\Omeg}-cm$ and transmittance of 90.88% for 840nm in film thickness in the wavelength range of the visible spectrum.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.419-420
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• 2008

In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.178-183
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• 2002

The effects of Dy$_2$O$_3$and Er$_2$O$_3$addition on the electromagnetic properties of Mn-Zn ferrite were investigated in the doping concentration range from 0.05 wt% to 0.25 wt%. All samples were prepared by standard fabrication of ferrite ceramics. The XRD patterns of sample were observed spinel and secondary phase. The densities of sample were showed nearly constant values. As the increased additive, electrical resistivity, initial permeability and real component of the series complex permeability increased with setting limits each other. Excess doped with Dy$_2$O$_3$ and Er$_2$O$_3$, those values decreased. The maximum electrical resistivity was observed with 0.15 we% and initial permeability was observed with 0.05 wt%. Magnetic loss decreased with additive and then increased in proportion to increased.