• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.209.2-209.2
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• 2013

We proposed and fabricated zinc oxide thin-film transistors (TFTs) employing 4-mercaptophenol (4MP) doped ZnO by atomic layer deposition (ALD) that results in highly stable and high performance. The 4MP concentration in ZnO films were varied from 1.7% to 5.6% by controlling Zn:4MP pulses. The n-type carrier concentrations in ZnO thin films were controlled from $1.017{\times}10^{20}/cm^3$ to $2.903{\times}10^{17}/cm^3$ with appropriate amount of 4MP doping. The 4.8% 4MP doped ZnO TFT revealed good device mobility performance of 8.4 $cm^2/Vs$ and the on/off current ratio of 106. Such 4MP doped ZnO TFTs exhibited relatively good stability (${\Delta}V_{th}$: 2.4 V) under positive bias-temperature stress while the TFTs with only ZnO showed a 4.3 ${\Delta}V_{th}$ shift, respectively.

• Korean Chemical Engineering Research
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• 제56권4호
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• pp.585-591
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• 2018

미세액적 유동반응기 공정에서 제조된 나노구조 $SiO_2:Zn$ 원환형 입자의 특성을 밴드갭 에너지와 표면 반응성의 관점에서 고찰하였다. $SiO_2:Zn$ 원환형 입자를 단일 공정에서 연속적이며 합리적인 생산 효율로 첨가제인 THAM (tris(hydroxymethyl)-aminomethane)과 도핑되는 $Zn^{2+}$ 이온의 농도 변화에 따라 성공적으로 제조할 수 있었다. 그리고 $Zn^{2+}$ 이온의 도핑은 $Si^{4+}$ 이온의 conduction band 보다 에너지 레벨이 낮은 $Zn^{2+}$ 이온의 acceptor level을 형성함으로써 $SiO_2:Zn$ 원환형 입자의 밴드갭 에너지를 줄일 수 있었다. 또한, 입자의 원환형 구조는 $SiO_2:Zn$ 입자의 밴드갭 에너지를 감소시키는데 기여하였다. 따라서 $Zn^{2+}$ 이온이 도핑된 $SiO_2:Zn$ 원환형 입자는 표면에 SiO-H의 형성과 산소 결함의 생성으로 표면 반응성을 증대시킬 것으로 사료되었다.

• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.78-84
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• 1998

ZnO:Al films were prepared by an rf magnetron sputtering and targets for the experiments were fabricated by sintering the mixture of ZnO and Al2O3. The most conductive film was obtained from the target with 2.0∼2.2 wt.% of Al2O3. Optical properties studied with spectroscopic ellipsometry showed band gap widening, i.e., the Burstein-Moss shift, with aluminum doping as well as with the elevation of deposition temperature. And it is found that the optical and electrical properties were related to the density of states as well as the variation of donor level. when hydrogen atoms were introduced into the films, the activation energy for the generation of oxygen vacancy was smaller for the films showing higher conductivity. This indicates that the optimum deposition condition for highly conductive ZnO:Al film has strong relation to the optimum doping condition.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 하계학술발표회
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• pp.38-39
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• 2003

전기적 저항이 낮은 투명 박막 물질은 현재 flat panel display, electroluminescent device, thin film transistor, solar cell 등 여러 분야에서 연구되고 있다. 그 중에서도 특히 ZnO：Ga는 현재 많이 쓰이는 ITO보다 화학적, 열적으로 안정한 상태를 보이는 투명 전도 산화막 물질로써 본 연구에서는 분광타원법을 이용하여 ZnO：Ga의 광학적 특성을 분석하였다. 본 연구를 위한 시료는 온도에 따른 ZnO：Ga／Sapphire 박막, $O_2$의 압력에 따른 ZnO：Ga／Sapphire 박막, Ga의 doping 농도에 따른 ZnO：Ga／Sapphire 박막으로 제작하였으며, 위상변조형 분광타원계(spectroscopic Phase Modulated Ellipsometer, Jobin-Yvon, UVISEL)를 사용하여 측정대역을 0.74 ~ 4.5 eV, 입사각을 70$^{\circ}$로 하여 측정하였다. (중략)

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.941-948
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• 2009

The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of $Zn_7Sb_2O_{12}$ spinel ($\alpha$ and $\beta$), microstructure of ZBSN (Sb/Bi=0.5) composed of a-spinel was more homogeneous than $Sb/Bi{\geq}1.0$ composed of $\beta$-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha\;=\;6{\sim}11$) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form ${V_0}^{\cdot}$ (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.

• 반도체디스플레이기술학회지
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• 제6권4호
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• pp.29-32
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• 2007

Zinc gallate, $ZnGa_2O_4:Mn^{2+}$ co-doped with different concentrations of $Mg^{2+}$ (0.001- 0.5 mol%) was prepared by solid state synthesis method. These compositions were investigated for their photoluminescence and cathodoluminescence properties. The optimized composition $Zn_{0.990}Mg_{0.005}Ga_2O_4:Mn_{0.005}$ shows higher luminescence intensity compared to the parent phosphor. The intense green emission peak was found at 504 nm. The $Mg^{2+}$ doping does not affect much the decay time. It remains <10 ms for these compositions which make them potential candidate for application in TV screens.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.942-948
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• 2010

In this study we aims to examine the effects of 0.5 mol% $Cr_2O_3$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to $800^{\circ}C$ by unknown Bi-rich phase produced at $700^{\circ}C$. Pyrochlore on cooling was reproduced in all systems. And $Zn_7Sb_2O_{12}$ spinel ($\alpha$-polymorph) and $\delta-Bi_2O_3$ phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha$ = 7~12) and independent on microstructure according to Sb/Bi ratio. Doping of $Cr_2O_3$ to ZBS seemed to form $Zn_i^{..}$(0.16 eV) and $V^{\bullet}_o$ (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.

• 한국세라믹학회지
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• 제40권7호
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• pp.637-643
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• 2003

PDP(Plasma Display Panel)용 녹색 형광체의 발광특성과 결정성을 향상시키기 위해 Zn$_2$SiO$_4$:Mn에 co-dopant로 Cr과 Ti 를 각각 첨가하여 졸-겔법으로 합성하였다. 이렇게 합성된 Zn$_2$SiO$_4$:Mn, M(M=Cr, Ti) 형광체는 고상반응의 경우와 비교하여 상대적으로 낮은 온도인 110$0^{\circ}C$에서 willemite 구조의 단일상이 형성되었다. 제조된 Zn$_2$SiO$_4$:Mn, M(M=Cr, Ti) 형광체에 대하여 진공자외선(Vacuum Ultraviolet, VUV) 영역의 147 nm 여기광원을 사용하여 발광특성을 조사하였다. Co-dopant의 영향을 알아보기 위해 Mn의 농도는 2 ㏖%, $H_2O$/TEOS의 비율은 36.1로 고정하였고, 이때 Cr과 Ti 모두 0.1 ㏖%에서 가장 좋은 발광특성을 나타냈다. Cr이 co-doping된 경우는 농도가 증가할수록 잔광시간은 짧아지나 발광강도는 지속적으로 감소한 반면, Ti를 co-doping했을 때는 오히려 낮은 농도에서 발광강도의 증가를 보이며 2.0 ㏖%에서 급격히 감소하였다.

• 태양에너지
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• 제19권1호
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• pp.29-36
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• 1999

ZnO/n-Si junctions were fabricated by spin coating with ZnO precursor produced by the sol-gel process. In order to increase the electrical conductivity of ZnO films, the films were n-doped with Al impurity and subsequently annealed at about $450^{\circ}C$ under reducing environments. The ohmic contacts between n-Si and AI for a bottom electrode were successfully fabricated by doping the rear surface of Si substrate with phosphorous atoms. The front surface of the substrate was also doped with phosphorous atoms for improving the efficiency of the solar cells. Consequently, conversion efficiencies ranging up to about 5.3% were obtained. These efficiencies were found to decrease slowly with time because of the oxide films formed at the ZnO/Si interface upon oxygen penetration through the porous ZnO. Oxygen barrier layers could be necessary in order to prevent the reduction of conversion efficiencies.

• 한국세라믹학회지
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• 제43권11호
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• pp.738-742
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• 2006

We report on the effects of co-doping with fluorine on properties of ZnO thin films grown by pulsed-laser deposition. The transport characteristics of Ag-F and Li-F codoped ZnO films were determined by Hall-effect measurements at room temperature. Ag-F codoped ZnO films showed n-type semiconducting behaviors. An ambiguous carrier type was observed in Li-F codoped ZnO films grown at a temperature of 500$^{\circ}C$ with the oxygen pressures of 20 and 200 mTorr. The qualities of the codoped ZnO films were studied by X-ray diffraction, atomic force microscopy, X-ray photoemission spectroscopy, and photoluminescence.