• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.632-635
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• 2011

Additions (ZnO, CuO) doped $0.98(Na_{0.5}K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ta_{0.83})O_3$ (0.98NKN-0.02LST-x) lead free piezoelectric ceramics have been fabricated by ordinary sintering technique. The effects of additions doping on the dielectric, piezoelectric, and ferroelectric properties of the ceramics were mainly investigated. X-ray diffraction of the sample appeared orthorhombic phase. The specimen doped with additions exhibits enhanced electrical properties ($d_{33}$= 153 pC/N). These results indicate that the 0.98NKN-0.02LST-x ceramics is a promising candidate for lead-free piezoelectric ceramics for applications such as piezoelectric actuators, harmonic oscillator and so on.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.489-494
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• 2001

In this thesis, the microstructure and electrical properties of ZnO varistors were investigated according to ZnO varistors with various formulation. A∼E's ZnO varistor ceramics were exhibited good density, 95% of theory density and low porosity, 5%, wholly. The average grain size of A-E's ZnO varistor ceramics exhibited 11.89$\mu\textrm{m}$, 13.57$\mu\textrm{m}$, 15.44$\mu\textrm{m}$, 11.92$\mu\textrm{m}$, 12.47$\mu\textrm{m}$, respectively. Grain size of C's ZnO varistor is larger and grain size of A and D's are smaller than other varistors. In the microstructure, A∼E's ZnO varistor ceramics sintered at l130$^{\circ}C$ was consisted of ZnO grain(ZnO), spinel phase(Zn$\sub$2.33/Sb$\sub$0.67/O$_4$), Bi-rich Phase(Bi$_2$O$_3$) and inergranular phase, wholly. Reference voltage of A∼E's ZnO varistor sintered at 1130$^{\circ}C$ decreased in order D, E > A > B > C's ZnO varistors. Nonlinear exponent of varistors exhibited high characteristics, above 30, wholly. Consequently, C's ZnO varistor exhibited good nonlinear exponent, 68. Lightning impulse residual voltage of A, B, C and E's ZnO varistors suited standard characteristics, below 12kV at current of 5kA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.126-130
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• 2008

In this study, in order to develop low loss multilayer piezoelectric actuator, PZN-PZT ceramics were fabricated using $Li_2CO_3,\;Bi_2O_3$, CuO and ZnO as sintering aids, their structural, piezoelectric and dielectric characteristics were investigated according to the amount of ZnO addition, At the sintering temperature of $870^{\circ}C$, the density, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\epsilon}_r$) and piezoelectric constant($d_{33}$) of 0.4 wt% ZnO added specimen (sintered at $870^{\circ}C$) showed the optimum value of $7.812g/cm^3$, 0.535, 916, 1399, 335 pC/N respectively. Taking into consideration above piezoelectric properties of the specimen sintered at low temperature, it was concluded that PZN-PZT ceramics using 0.4 wt% ZnO as additive showed the optimum characteristics as the composition ceramics for low loss multilayer piezoelectric actuator application.

• Proceedings of the Korean Ceranic Society Conference
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• 2004.04b
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• pp.36.1-36.1
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• 2004

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.193-195
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• 2005

[ $0.96[Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3]+0.04SrTiO_3+0.3wt%Nb_2O_5+0.2wt%La_2O_3+xwt%ZnO$ ], were studied in order to develope the superior piezoelectric properties of Lead-free piezoelectric ceramics. With increasing amount of ZnO addition, density showed the maximum value of 5.79(g/$cm^3$) at 0wt% ZnO addition, and electromechanical coupling factor($k_p$) and dielectric constant decreased, and mechanical quality factor($Q_m$) increased and showed the maximum value of 280 at 0.4wt% ZnO addition.

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.201-205
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• 2007

Low temperature sintering behavior and microwave dielectric properties of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}zinc$ borosilicate glass(ZBS) systems were investigated with a view to applying the composition to LTCC technology. The addition of $10{\sim}30$ wt% ZBS in both systems ensured successful sintering below $900^{\circ}C$. For the $BiNbO_{4^-}ZBS$ system, the sintering was completed when 15 wt% ZBS was added whereas 25 wt% ZBS was necessary for the $ZnNb_2O_{6^-}zinc$ system. Secondary phase was not observed in the $BiNbO_{4^-}ZBS$ system but a small amount of $ZnNb_2O_6$ with the willemite structure as the secondary phase was observed in the $ZnNb_2O_{6^-}ZBS$ system. In terms of dielectric properties, the application of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}ZBS$ systems sintered at $900^{\circ}C$ to LTCC were shown to be appropriate; $BiNbO_{4^-}15$ wt% ZBS($\varepsilon_r=25,\;Q{\times}f\;value=3,700GHz,\;\tau_f=-32ppm/^{\circ}C$) and $ZnNb_2O_{6^-}25$ wt% ZBS($\varepsilon_r=15.8,\;Q{\times}f\;value=5,400GHz,\;\tau_f=-98ppm/^{\circ}C$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.88-92
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• 2002

$Ba(Zn_{0.8}Co_{0.2})_{1/3}Ta_{2/3}O_3$ [BZCT(80/20)] ceramics were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1450{\sim}1550^{\circ}C$ for 5hr. in air. The structural properties of BZCT(80/20) ceramics were investigated as a function of sintering temperature. The BZCT(80/20) ceramics sintered at $1550^{\circ}C$ showed a polycrystalline complex perovskite structure without second phases and any unreacted materials. Increasing the sintering temperature, the bulk density and ordering were increased. The bulk density of the BZCT(80/20) ceramics sintered at $1550^{\circ}C$ was 7.50[$g/cm^2$]. Increasing the sintering temperature, the average grain size were increased and pore were decreased.

• Journal of the Korean Ceramic Society
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• v.36 no.10
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• pp.1108-1114
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• 1999

Microstructure and electrical properties of ZnO-doped (0-5 mol%) 0.05 Pb(Mn1/3Sb2/3)O3-0.95 PZT ceramics were investigated. Sintering temperature was decreased to 100$0^{\circ}C$ due to eutetic reaction between PbO and ZnO. Grain-size increased up to adding 1mol% ZnO and then decreased. Compositions of grain and grain-boundary were investigated by WDS. Lattice parameter was decreased with ZnO addition. Density increased with ZnO addition and reached to the maximum of 7.84(g/cm2) at 2 mol% ZnO. The effect of ZnO on electrical properties of PMS-PZT was investigated. At 3mol% ZnO addition electromechanical coupling factor(kp) was about 50% and relative dielectric constant($\varepsilon$33/$\varepsilon$0) was 997 Mechanical quality factor(Qm) decreased with ZnO addition. Lattice parameters and tetragonality(c/a) were measured to investigate relationship between the electric properties and substitution of Zn2+. At 3 mol% ZnO tetragonality was maximiged at c/a=1.0035 Curie temperature (Tc) decreased slightly with ZnO addition.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.101-103
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• 2003

The $ZnNb_2O_6$ ceramics with 5wt% CuO and $B_2O_3$(1,3,5wt%) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $950^{\circ}C{\sim}1025^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature and $B_2O_3$ addition by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature and $B_2O_3$ addition. Increasing the sintering temperature, the peak of second phase ($Cu_3Nb_2O_6$) was increased. But no significant difference was observed as the $B_2O_3$ addition, In the $ZnNb_2O_6$ ceramics with 5wt% CuO and 5wt% $B_2O_3$ sintered at $975^{\circ}C$ for 3hr, the dielectric constant, quality factor, temperature coefficient of the resonant frequency were 19.30, 14,662GHz, $+4.18ppm/^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.29 no.3
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• pp.223-231
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• 1992

CaO and ZnO were added to Al2O3-SiO2 binary system respectively as flux, then ZrO2 and TiO2 were applied as nucleating agent to these CaO-Al2O3-SiO2 and ZnO-Al2O3-SiO2 ternary system glass. The transparency could not be kept in CaO-Al2O3-SiO2 system glass, whereas the transparent glass-ceramics were prepared in ZnO-Al2O3-SiO2 system glass containing ZrO2 as the nucleating agent. At this time the optimum heating temperatures for the nucleation and the crystal growth were 78$0^{\circ}C$ and 97$0^{\circ}C$. The sizes of the precipitated crystals in the transparent glass-ceramics were below 0.1 ${\mu}{\textrm}{m}$, and their light transmissibilities were more than 80%.