• Journal of Pharmacopuncture
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• v.15 no.3
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• pp.13-18
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• 2012

Objectives: The purpose of this study is to examine whether Hominis Placental pharmacopuncture solution (HPPS) combined with zinc-oxide nanoparticles (ZnO NP) activates RAW 264.7 cells. Methods: We soaked ZnO nanoparticles in the Hominis Placenta pharmacopuncture solution, thereby making a combined form (ZnO NP HPPS). The effect of ZnO NP HPPS on the intracellular reactive oxygen species (ROS) production was measured by 2', 7'-dichlorofluorescin diacetate (DCFH-DA) assay. The effect of ZnO NP HPPS on NF-${\kappa}B$ was measured by using a luciferase assay. The effect of ZnO NP HPPS on the cytokine expression was assessed by semi-quantitative reverse transcriptase polymerase chain reaction (RT-PCR). The cellular uptake of ZnO NP HPPS was measured by using a flow cytometric analysis, and cellular structural alterations were analyzed by using transmission electron microscopy (TEM). Results: Neither the HPPS nor the ZnO NPs induced intracellular ROS production in RAW 264.7 cells. Neither of the materials activated NF-${\kappa}B$ or it's dependent genes, such as TNF-${\alpha}$, IL-1, and MCP-1. However, ZnO NP HPPS, the combined form of ZnO NPs and HPPS, did induce the intracellular ROS production, as well as prominently activating NF-${\kappa}B$ and it's dependent genes. Also, compared to ZnO NPs, it effectively increa-sed the uptake by RAW 264.7 cells. In addition, cellular structural alterations were observed in groups treated with ZnO NP HPPS. Conclusions: Neither ZnO NP nor HPPS activated RAW 264.7 cells, which is likely due to a low cellular uptake. The ZnO NP HPPS, however, significantly activated NF-${\kappa}B$ and up-regulated its dependent genes such as TNF-${\alpha}$, IL-1, and MCP-1. ZnO NP HPPS was also more easily taken into the RAW 264.7 cells than either ZnO NP or HPPS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.329-332
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• 2004

ZnO thin films were grown with different plume-substrate angles by pulsed laser deposition (PLD) to control the amount of ablated species arriving on a substrate per laser shot. The angles between plume propagation direction and substrate plane (P-S angle) were 0$^{\circ}$, 45$^{\circ}$ and 90$^{\circ}$. The growth time was changed in order to adjust film thickness. From the XRD pattern exhibiting a dominant (002) and a minor (101) XRD peak of ZnO, all films were found to be well oriented along c-axis. From the AFM image, it was found that the grain size of ZnO thin film was increased, as P-S angle decreased. UV intensity investigated by PL (Photoluminescence) increased as P-S angle decreased.

• Clean Technology
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• v.16 no.4
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• pp.292-296
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• 2010

We fabricated quantum dot sensitized solar cells(QDSSC) using PbS as a sensitizer and measured the solar energy conversion efficiency. After growing ZnO nanowires on the substrate by low temperature ammonia solution reaction, PbS QDs were deposited on ZnO nanowires by SILAR(Successive ionic layer adsorption and reaction) method. The morphology and crystallinity of PbS/ZnO nanowires were studied by SEM and XRD. In this study, the maximum conversion efficiency of QDSSC using PbS was 0.075% at one sun, which was lower than that of QDSSC using other sensitizers. The reasons it showed relatively low efficiency are i) the probability of type-I band gap arrangement between ZnO and PbS, ii) disturbance of electron migration by the various-sized PbS band gap, iii) stability dip by the chemical reaction of PbS QDs with electrolyte. To solve these problems, researches about controlling the size distribution of PbS and new type electrolyte would be needed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.575-579
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• 2008

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ of by RF magnetron sputtering. Target was ZnO ceramic mixed with 2 wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-3}$, mobilities from 0.194 to $2.3\;cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4\;{\Omega}cm$. p-type sample has density of $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. XPS spectra show that Ols has O-O and Zn-O structures and Al2p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.88-88
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• 2011

ZnO는 직접 천이형 반도체로써, 상온에서 3.4eV에 해당하는 띠틈을 가지고 있다. 뿐만 아니라 60meV의 큰 엑시톤 결합에너지를 가지고 있어 단파장 광전 소자 영역의 LED(Light Emitting Diode)나 LD(Laser Diode)에 널리 사용되고 있다. 하지만 일반적으로 격자틈새 Zn(Zni2+)이온이나 O 빈자리(V02+)이온과 같은 자연적인 도너 이온이 존재하여 n-형 전도성을 나타낸다. 그러므로 ZnO계 LED와 LD의 개발에 있어서 가장 중요한 연구 과제는 재현성 있고 안정된 고농도의 p-형 ZnO박막을 성장시키는 것이다. 하지만, 자기보상효과나 얕은 억셉터 준위, 억셉터의 낮은 용해도로 인하여 어려움을 가지고 있다. 본 연구에서는 고품질의 p-형 ZnO박막을 제작하기 위해 AlN를 도핑시킨 ZnO박막을 RF 마그네트론 스퍼터링 법을 이용하여 Ar과 O2분위기에서 성장시켰다. ZnO와 AlN타겟을 동시에 사용하였으며, ZnO타겟에 걸어준 RF 파워는 80W, AlN타겟에 걸어준 RF 파워는 5~20W로 변화시켰다. 박막의 전기적, 광학적 특성은 XPS (X-ray Photoelectron Spectroscopy), REELS (Reflection Electron Energy Loss Spectroscopy), XRD (X-ray Diffraction), SIMS (Secondary Ion Mass Spectrometry), AES (Auger Electron Spectroscopy), Hall measurement를 이용하여 연구하였다. XPS측정결과, AlN를 도핑시킨 ZnO박막의 Zn2p3/2와 O1s피크는 undoped ZnO박막의 피크보다 낮은 결합에너지에서 측정되었다. 모든 박막이 결정화 되었으며, (002)방향으로 우선적으로 성장된 것을 확인할 수 있었다. 홀 측정 결과, 기판을 $200^{\circ}C$로 가열하면서 성장시킨 박막이 p-형을 나타내었으며, 비저항(Resistivity)이 $5.51{\times}10^{-3}{\Omega}{\cdot}m$, 캐리어 농도(Carrier Concentration)가 $1.96{\times}1018cm^{-3}$, 이동도(Mobility)가 $481cm^2$/Vs이었다. 또한 QUEELS -Simulation에 의한 광학적 특성분석 결과, 가시광선영역에서 투과율이 90%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여주었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.252-252
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• 2009

In this work, the nanocrystalline ZnO/polycrystalline (poly) aluminum nitride (AlN)/Si structure was fabricated for humidity sensor applications based on surface acoustic wave (SAW). In this structure, the ZnO film was used as sensing material layer. These ZnO and AlN(0002) were deposited by so-gel process and a pulse reactive magnetron sputtering, respectively. These experimental results showed that the obtained SAW velocity on AlN film was about 5128 m/s at $h/\lambda$=0.0125 (h and $\lambda$ is thickness and wavelength, respectively). For ZnO sensing layers coated on AlN, films have hexagonal wurtzite structure and nanometer particle size. The crystalline size of ZnO films annealed at 400, 500, and 600 $^{\circ}C$ is 10.2, 29.1, and 38 nm, respectively. Surface of the film exhibits spongy which can adsorb steam in the air. The best quality of the ZnO film was obtained with annealing temperature at 500 $^{\circ}Cis$. The change in frequency response (127.9~127.85 MHz) of the SAW humidity sensor based on ZnO/AlN structure was measured along the change in humidity (41~69%). The structural properties of thin films wereinvestigated by XRD and SEM.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.257.1-257.1
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• 2015

Cu(In,Ga)Se2 (CIGS) 박막 태양 전지에서 buffer layer는 CIGS 흡수층과 TCO 사이의 밴드갭 차이에 대한 문제점과 lattice mismatch를 해결하기 위해 필수적이다. 흔히 buffer layer 물질로는 CdS가 가장 많이 사용되고 있으나 Cd의 독성에 관한 문제가 야기되고 있다. 따라서 ZnS(O, OH) buffer layer가 친환경 물질로 기존의 CdS 버퍼 층의 대체 물질로 각광 받고 있으며, 단파장 범위에서 높은 투과율로 인해 wide band gap의 Chalcopyrite 태양 전지에 응용되는 buffer layer로 많은 연구가 이루어지고 있다. 또한 buffer layer를 최적화 하여 carrier lifetime과 양자 효율이 증가시킬 수 있는 특성을 가지고 있다. 이 연구에서는 Cu(In,Ga)Se2 (CIGS) 박막에 화학습식공정 (CBD) 방법을 이용하여 최적화된 ZnS(O, OH)의 증착 조건을 찾고, 고품질의 buffer layer를 제조하기 위한 실험에 초점을 맞췄다. 또한, buffer layer의 막질을 개선하고 균일한 막을 제조하기 위해 processing parameters인 시약의 농도, 제조 시간 및 온도 등의 다양한 변화를 통해 실험을 진행하였다. 그 후 최적화된 ZnS(O, OH) buffer layer의 특성 분석을 위해 X-ray diffraction(XRD), photoluminescence (PL), scanning electron microscope (SEM) and GD-OES을 이용하였고, 이를 통해 제조된 CIGS 박막 태양전지는 light induced current-voltage (LIV) and external quantum efficiency (EQE)를 통해 특성 분석을 실시 하였다. 결과적으로, 제조된 ZnS(O, OH) buffer layer의 $ZnSO4{\cdot}7H2O$의 농도는 0.16 M, Thiourea는 0.5 M, NH4OH는 7.5 M, 그리고 반응 온도는 77.5 oC의 조건 하에 CIGS 기판 위에 균일하고 균열이 없는 ZnS(O, OH) 박막을 제조하였으며 이때 제조된 태양전지의 소자 특성은 Voc = 0.478 V, Jsc = 35.79 mA/cm2, FF = 47.77%, ${\eta}=8,18 %$이다.

• Journal of environmental and Sanitary engineering
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• v.10 no.3
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• pp.105-114
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• 1995

There has been increasing awareness on the importance of not only removal of organic materials but also sterilization of microbial cell in the drinking water purification research, so there has been many researches on that area. This study has been designed to analyze the effects of $TiO_{2}$ and ZnO coated on activated carbon on Escherichia coli. In this study, the sterilization power was analyzed by (1) variation of $TiO_{2}$ and ZnO concentration coated on activated carbon (2) variation of UV intensity. In addition, the kinetics between exposure time and sterilization velocity was viewed by the method of Chick. The results are as follows. 1. Survival ratio of E. coli decreased as time goes on in application of $TiO_{2}$, ZnO and $TiO_{2}{\cdot}ZnO$. In $TiO_{2}$ and ZnO, the effect increased upto certain concentration, but decreased there-after. In $TiO_{2}{\cdot}ZnO$, the effect of sterilization was in similar way among 3 combinations. 2. Survival ratio of E. coli decreased proportionately to an increase of light intensity in ZnO and $TiO_{2}{\cdit}ZnO$. In $TiO_{2}$, the survival ratio differed over extent of irradiation but the difference over the light intensity was not significant. 3. When Chick's law of sterilization was applied, m values of three concentrations of $TiO_{2}$ were 1.57,0.98, 1.96 respectively. M values of three concentration of ZnO were 1.10, 1.18,0. 11 respectively and those of three combination of $TiO_{2}{\cdot}ZnO$ were 1.17, 1.24, 1.74 respectively.

• ETRI Journal
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• v.37 no.6
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• pp.1135-1142
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• 2015

Multilayered ZnO-$SnO_2$ heterostructure thin films consisting of ZnO and $SnO_2$ layers are produced by alternating the pulsed laser ablation of ZnO and $SnO_2$ targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and $SnO_2$ layers. The performance parameters of amorphous multilayered ZnO-$SnO_2$ heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and $SnO_2$ layers. A highest electron mobility of $43cm^2/V{\cdot}s$, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of $10^{10}$ are obtained for the amorphous multilayered ZnO(1.5nm)-$SnO_2$(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO-$SnO_2$ heterostructure film consisting of ZnO, $SnO_2$, and ZnO-$SnO_2$ interface layers.

• Journal of the Korean Magnetics Society
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• v.18 no.2
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• pp.75-78
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• 2008

$AB_2X_4$(A, B=Transition Metal, X=O, S, Se) are cubic spinel normal ferrimagnets, in which M ions occupy the tetrahedral sites and Cr ions occupy the octahedral sites. Recently, they have been investigated for behaviour of B site ions and A-B interaction. Polycrystalline $[Co_{0.9}Zn_{0.1}]_A[Cr_{1.98}{^{57}Fe_{0.02}}]_BO_4$ compound was prepared by wet-chemical process. The ferrimagnetic transition was observed around 90K. $M\"{o}ssbauer$ absorption spectra at 4.2K show that the well-developed two sextets are superposed with small difference in hyperfine fields($H_{hf}$). The hyperfine fields of $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$ and $Co_{0.9}Zn_{0.1}Cr_{1.98}{^{57}Fe_{0.02}}O_4$ were determined to be 488, 478 kOe and 486, 468 kOe, respectively. We notice that the one of the magnetic hyperfine field values changes with Zn ion substitution. These results suggest the incommensurate states and spin-reorientation temperature($T_S=18K$) changes with Zn ions substitution below spin-reorientation temperature($T_S=28K$) of $CoCr_{1.98}{^{57}Fe_{0.02}}O_4$