• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.356-361
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• 2015

$Cd_{0.5}Zn_{0.5}S/ZnO$ composite photocatalysts were synthesized using the precipitation method and characterized by XRD, UV-vis DRS, PL and FE-SEM. Photocatalytic activities of the materials were evaluated by measuring the degradation of rhodamine B under visible light irradiation. Contrary to ZnO, $Cd_{0.5}Zn_{0.5}S/ZnO$ materials absorb visible light as well as UV and their absorption intensities in visible region increased with increasing the $Cd_{0.5}Zn_{0.5}S$ amount. The increment in the $Cd_{0.5}Zn_{0.5}S$ content in $Cd_{0.5}Zn_{0.5}S/ZnO$ also leads to reducing the particle size and consequently increasing the specific surface area. $Cd_{0.5}Zn_{0.5}S/ZnO$ materials with the larger $Cd_{0.5}Zn_{0.5}S$ content showed the higher activity in the photocatalytic degradation of rhodamine B under visible light irradiation. Therefore, the heterojunction effect between $Cd_{0.5}Zn_{0.5}S$ and ZnO as well as the adsorption capacity seems to give important contributions to the photocatalytic activity of the $Cd_{0.5}Zn_{0.5}S/ZnO$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.326-326
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• 2012

ZnS를 합성하는 방법 중 thioacetamide (TAA)를 녹인 물에 ZnO template를 넣어서 황화시키는 방법이 있다. 이 방법은 실험과정이 간편할 뿐만 아니라 그 반응양의 조절도 용이해 ZnS-ZnO core-shell 구조나 ZnS hollow 구조 등을 만드는데 널리 사용되고 있다. 그러나 다양한 형태의 ZnS 구조체 합성에 관한 연구는 활발한 반면, ZnS의 상형성 과정이나 구조 변화와 같은 ZnO의 황화 과정 기구에 관한 연구는 매우 미비한 실정이다. ZnS는 기본적으로 저온에서는 cubic sphalerite 구조를, 고온에서는 hexagonal wurtzite 구조를 안정상으로 가진다. 또한, 8H나 15R 등과 같은 다양한 polytype 구조도 존재한다. 그러나 다양한 구조에서 비슷한 면간거리가 존재하기 때문에 결정구조의 분석이 어려운 실정이다. 이러한 비슷한 면간거리를 가지는 ZnS 등의 결정구조 분석에 있어 원자배열을 직접적으로 관찰할 수 있는 투과전자현미경 (TEM, transmission electron microscopye)을 이용한 연구는 큰 강점을 가진다. 본 연구에서는 다공성 ZnO 막을 황화시켜 형성된 ZnS 막의 미세구조 특성을 분석하였다. 다공성 ZnO 막은 패턴된 Si (111) 기판 위에 스핀코팅법을 이용하여 4,000 rpm의 속도로 증착되었으며 ZnO 결정화를 위해 150 도와 500도에서 각각 drying과 후열처리를 수행하였다. 이렇게 만들어진 ZnO 막을 TAA를 녹인 물에 넣어 48 시간 동안 반응시켰고 최종적으로 ZnS 막을 생성하였다. 다공성 ZnS 막의 미세구조를 분석하기 위해 주사전자현미경 (SEM, scanning electron microscope), X-선 회절분석기 (XRD, x-ray diffractometer), 그리고 투과전자현미경을 이용하였으며, 정확한 결정구조 분석을 위하여 결정구조 시뮬레이션을 병행하였다.

• Korean Journal of Metals and Materials
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• v.50 no.3
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• pp.233-236
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• 2012

ZnO nanowires were fabricated through thermal evaporation of Zn or ZnS powder using solar energy. The Zn or ZnS powder was heated and evaporated by sunlight. The sunlight was concentrated on the Zn or ZnS powder by a converging lens and then the Zn or ZnS powder was evaporated and oxidized in air. After oxidation, ZnO nanowires were fabricated in the focal point. Strong ultraviolet emission, which corresponds to the near band-edge emission, was observed from the ZnO nanowires synthesized using Zn powder as a source material. Meanwhile, green emission, related to intrinsic defects such as oxygen vacancies, prevailed for the ZnO nanowires fabricated using ZnS powder. No catalysts were used in the fabrication of the ZnO nanowires, which suggested the ZnO nanowires were grown by a vapor-solid mechanism.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.376-386
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• 2014

Zinc oxysulfide nanocrystals (ZnOS NCs) were synthesized by forming ZnS phase on a ZnO matrix. ZnO nanocrystals (NCs) with a diameter of 10 nm were synthesized by forced hydrolysis in an organic solvent. As-synthesized ZnO NCs aggregated with each other due to the high surface energy. As acetic acid (AA) was added into the milky suspension of the aggregated ZnO NCs, transparent solution of well dispersed ZnO NCs formed. Finally ZnOS NCs were formed by adding thioacetic acid (TAA) to the transparent solution. The effect of recrystallization on the structural, optical and electrical properties of the ZnOS NCs were studied. The results of UV-vis absorption confirmed the band gap tunability caused by increasing the curing temperature of ZnOS thin films. This may have originated from the larger effective size due to the recrystallization of zinc sulfide (ZnS). From XRD result we identified that ZnOS thin films have a zinc blende crystal structure of ZnS without wurtzite ZnO structure. This is probably due to the small amount of ZnO phases. These assertions were verified through EDS of FE-SEM, XPS and EDS mapping of HR-TEM results; we clearly proved that ZnOS were comprised of ZnS and ZnO phases.

• Clean Technology
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• v.26 no.4
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• pp.311-320
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• 2020

In this study, the photocatalytic degradation of rhodamine B (RhB), methyl orange (MO) and methylene blue (MB) was carried out under visible light irradiation using CdS and CdZnS/ZnO photocatalysts prepared by a simple precipitation method. This study focused on examining the effect of physicochemical properties of dye and photocatalyst on the reaction pathway of photocatalytic degradation. The prepared photocatalysts were characterized by XRD, UV-vis DRS and XPS. Both the CdS and CdZnS/ZnO photocatalysts exhibit an excellent absorption in the visible light and the UV light regions. It was observed that the photocatalytic degradation of MO proceeds via the same reaction mechanism on both the CdS and CdZnS/ZnO photocatalysts. However, the photocatalytic degradation of RhB and MB was found to proceed through a different reaction pathway on the CdS and CdZnS/ZnO catalysts. It is interesting to note that MB dimer was formed on the CdS catalyst at the beginning of the photocatalytic reaction, while the MB monomer was degraded during the overall photocatalytic reaction on CdZnS/ZnO. The above results may be mainly ascribed to the difference of band edge potential of the conduction band in the CdS and CdZnS/ZnO semiconductors and the adsorption property of dye on the catalysts.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.190-197
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• 2002

In this thesis, ZnO varistors with various formulation, such as A∼E, were fabricated according to ceramic fabrication method. The microstructure, electrical properties, and surge characteristics of ZnO varistors were investigated according to ZnO varistors with various formulation. In the microstructure, A∼E\`s ZnO varistor ceramics sintered at 1130$\^{C}$ was consisted of ZnO grain(ZnO), spinel phase (Zn$\_$2.33/Sb$\_$0.67/O$\_$4/), Bi-rich phase(Bi$_2$O$_3$) and intergranuler phase, wholly. Lightning impulse residual voltage of A, B, C and E\`s ZnO varistors suited standard characteristics, below 12kV at current of 5kA. On the contrary, D\`s ZnO varistor exhibited high residual voltage as high reference voltage. In the accelerated aging test, leakage current and watt loss of B, C and D\`s ZnO varistors increases abruptly with stress time under the first a.c. stress(115$\^{C}$/3.213kV/300h). Consequently, C varistor exhibited a thermal run away. On the contrary, leakage current and watt loss of A and C\`s ZnO varistors which show low initial leakage current exhibited constant characteristics. After high current impulse test, A\`s ZnO varistor has broken the side of varistor but impulse current flowed. On the contrary, E\`s ZnO Varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After long duration impulse current test, E\`s ZnO varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After high current impulse test and long duration impulse current test, E\`s ZnO varistor exhibited very good characteristics which variation rate of residual voltage is 1.4% before and after test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.552-556
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• 2002

The microstructure and electrical characteristics of A~C's ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $1130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6mm/min, respectively, were investigated. In the microstructure, A~C's ZnO varist-ors fabricated variable sintering condition was consisted of ZnO grain(ZnO), spinel phase$(Zn_{2.33}Sb_{0.67}O_4)$ Bi-rich $phase(Bi_{2}O_{3})$, wholly. Varistor voltage of A~C's ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B < C's ZnO varistors. C's ZnO varistor exhibited good characteristics that nonlinear exponent is 31.70. Leakage current of A~C's ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.52-58
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• 2013

Two different window-structured $CuInGaSe_2$(CIGS) solar cells, i.e., CIGS/thin-CdS/ZnO:B(sample A) and CIGS/very thin-CdS/Zn(S/O)/ZnO:B(sample B), were prepared, and the diffusivity of Zn, Cd, S, and B atoms, respectively, in the CIGS, ZnO or Zn(S/O) layer was estimated by a theoretical fit to experimental secondary ion mass spectrometer data. Diffusivities of Zn, Cd, S, and B atoms in CIGS were $2.0{\times}10^{-13}(1.5{\times}10^{-13})$, $4.6{\times}10^{-13}(4.4{\times}10^{-13})$, $1.6{\times}10^{-13}(1.8{\times}10^{-13})$, and $1.2{\times}10^{-12}cm^2/s$ at 423K, respectively, where the values in parentheses were obtained from sample B and the others from sample A. The diffusivity of the B atom in a Zn(S/O) of sample B was $2.1{\times}10^{-14}cm^2/sec$. Moreover, the diffusivities of Cd and S atoms diffusing back into ZnO(sample A) or Zn(S/O)(sample A) layers were extremely low at 423K, and the estimated diffusion coefficients were $2.2{\times}10^{-15}cm^2/s$ for Cd and $3.0{\times}10^{-15}cm^2/s$ for S.

• Analytical Science and Technology
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• v.14 no.3
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• pp.259-265
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• 2001

Photocatalytic degradation of Congo red was performed using various semiconductors as ZnO, CdS, rutile-$TiO_2$ or mixed rutile-$TiO_2$/ZnO. The change of degradation of the dye was investigated by UV-visible spectrophotometric method. The photocatalytic action of CdS was greater than ZnO and rutile-$TiO_2$ in account of low band gap energy of CdS. The rate of photocatalytic degradation reaction increased drastically in according to increasing ratio of ZnO on mixed rutile-$TiO_2$/ZnO. These photocatalytic effect of rutile-$TiO_2$ was suppressed by more stable rutile-$TiO_2$, doping the hydrolysis product with $Zn^{2+}$ prior to calcination onto the rutile-$TiO_2$ surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.681-684
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• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.