• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2004.05a
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• pp.342-346
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• 2004

Recently there has been a great world-wide interest in developing and characterizing new nano-structured materials. These newly developed materials are often prepared in limited quantities and shapes unsuitable for the extensive mechanical testing. The development of depth sensing indentation methods have introduced the advantage of load and depth measurement during the indentation cycle. In the present work, ZnO thin films are prepared on the Glass, GaAs(100), Si(111), and Si(100) substrates at different temperatures by pulsed laser deposition(PLD) method. Because the potential energy in c-axis is law, the films always shaw c-axis orientation at the optimized conditions in spite of the different substrates. Thin films are investigated by X-ray diffractometer and Nano indentation equipment. From these measurements it is possible to get elastic modulus and hardness of ZnO thin films on all substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.391-391
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• 2010

The stability enhancement of Znic oxide thin film transistor deposited by PLD-DBD has been reported here using the bias temperature stress test. Znic oxide (ZnO) thin films were deposited on $SiO_2$/Si (100) by pulsed laser deposition method with and without dielectric barrier discharge (DBD) method. The DBD is the efficient method to adopt the nitrogen ions into the thin films. The TFT characteristics of ZnO TFTs with and without Nirogen (N) doping show similar results with $I_{on/off}$ of $10^5{\sim}10^6$. However. the bias temperature stress (BTS) test of N-doped ZnO TFT with DBD shows higher stability than that of ZnO TFT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.419-420
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• 2008

In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.12
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• pp.1419-1424
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• 2011

Nanoimprint lithography is a next generation lithography technology, which enables to fabricate nano to micron-scale patterns through simple and low cost process. Nanoimprint lithography has been applied in various industry fields such as light emitting diodes, solar cells and display. Functional patterns, including anti-reflection moth-eye pattern, photonic crystal pattern, fabricated by nanoimprint lithography are used to improve overall efficiency of devices in that fields. For these reasons, in this study, sub-micron-scaled functional patterns were directly fabricated on Si and glass substrates by thermal imprinting process using ZnO nano-particles dispersion resin. Through the thermal imprinting process, arrays of sub-micron-scaled pillar and hole patterns were successfully fabricated on the Si and glass substrates. And then, the topography, components and optical property of the imprinted ZnO nano-particles/resin patterns are characterized by Scanning Electron Microscope, Energy-dispersive X-ray spectroscopy and UV-vis spectrometer, respectively.

• Journal of the Korean Ceramic Society
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• v.12 no.1
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• pp.23-28
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• 1975

The object of this study is to find the optimum conditions for crystal growth and kinds of crystal in ZnO-Al2O3-SiO2 glass composition. At first, the base glass composed of ZnO (44.7%), Al2O3(14.0%) and SiO2(41.3%) was melted in propane gas furnace at 1450-150$0^{\circ}C$ for an hour, and then it was poured into the stainless steel mould heated previously at $600^{\circ}C$ to obtain the thin glass test piece. Four crystal forms from base glass such as stuffed keatite, zinc orthosilicate, zinc aluminosilicate, and cristobalite were crystallized during heat treatment between 80$0^{\circ}C$ and 110$0^{\circ}C$. For the investigation of crystal growth, X-ray diffractometer and thermal differential analysis were used and the growth rate of the four crystal forms were obtained by the method of Archimedes specific gravity and intensity comparison of X-ray diffraction peak. The results obtained were as follows. 1) Stuffed keatite peaks which started to appear after two hours at 80$0^{\circ}C$ were maximum after 11 hours and this crystal breaks down to willemite irreversibly at about 100$0^{\circ}C$. 2) Development of gahnite started at 85$0^{\circ}C$ and increased with temperature growth. 3) Stuffed keatite which had been transformed slowly into willemite at 100$0^{\circ}C$ was decreased with time and willemite increased until four hours. 4) Cristobalite began to be developed after treatment of 110$0^{\circ}C$.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.609-614
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• 2012

We report on the NO gas sensing properties of non-directional ZnO nanofibers synthesized using a typical electrospinning technique. These non-directional ZnO nanofibers were electrospun on an $SiO_2$/Si substrate from a solution containing poly vinyl alcohol (PVA) and zinc nitrate hexahydrate dissolved in distilled water. Calcination processing of the ZnO/PVA composite nanofibers resulted in a random network of polycrystalline ZnO nanofibers of 50 nm to 100 nm in diameter. The diameter of the nanofibers was found to depend primarily on the solution viscosity; a proper viscosity was maintained by adding PVA to fabricate uniform ZnO nanofibers. Microstructural measurements using scanning electron microscopy revealed that our synthesized ZnO nanofibers after calcination had coarser surface morphology than those before calcination, indicating that the calcination processing was sufficient to remove organic contents. From the gas sensing response measurements for various NO gas concentrations in dry air at several working temperatures, it was found that gas sensors based on electrospun ZnO nanofibers showed quite good responses, exhibiting a maximum sensitivity to NO gas in dry air at an operating temperature of $200^{\circ}C$. In particular, the non-directional electrospun ZnO nanofiber gas sensors were found to have a good NO gas detection limit of sub-ppm levels in dry air. These results illustrate that non-directional electrospun ZnO nanofibers are promising for use in low-cost, high-performance practical NO gas sensors.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.28.1-28.1
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• 2009

The superior properties of ZnO such as high exciton binding energy, high thermal and chemical stability, low growth temperature and possibility of wet etching process in ZnO have great interest for applications ranging from optoelectronics to chemical sensor. Particularly, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. Currently, low-dimensional ZnO is synthesized by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), thermal evaporation, and sol.gel growth. Recently, our group has been reported about achievement the growth of Ga-doped ZnO nanorods using ZnO seed layer on p-type Si substrate by RF magnetron sputtering system at high rf power and high growth temperature. However, the crystallinity of nanorods deteriorates due to lattice mismatch between nanorods and Si substrate. Also, in the growth of oxide using sputtering, the oxygen flow ratio relative to argon gas flow is an important growth parameter and significantly affects the structural properties. In this study, Phosphorus (P) doped ZnO nanorods were grown on c-sapphire substrates without seed layer by radio frequency magnetron sputtering with various argon/oxygen gas ratios. The layer change films into nanorods with decreasing oxygen partial pressure. The diameter and length of vertically well-aligned on the c-sapphire substrate are in the range of 51-103 nm and about 725 nm, respectively. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.387-387
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• 2007

기능성 나노소자를 구현할 수 있는 나노 소재로 0차원 구조의 양자점(quantum dot)과 1차원 구조의 양자선 및 나노선(nanorod)이 제안되고 있다. 나노선의 경우 나노스케일의 dimension, 앙자 제한 효과, 탁월한 결정성, self-assembly, internal stress등 기존의 벌크형 소재에서 발견할 수 없는 새로운 기능성이 나타나고 있어서 바이오, 에너지, 구조, 전자, 센서 등의 분야에서 활용되고 있다. 현재 국내외적으로 널리 연구되고 있는 나노선으로는 Si 및 Ge, $SnO_2$, SiC, ZnO 등이 있으며 특히, ZnO는 우수한 물리적 전기적 특성과 함께 나노선으로의 합성이 비교적 쉬워 주목받고 있는 재료이다. ZnO의 합성방법으로는 thermal CVD, MOCVD, PLD, wet-chemistry 등 다양한 방법이 사용되고 있다. 특히 MOCVD 법은 수직 정렬된 ZnO 나노막대를 합성하기가 매우 용이하다. 본 실험에서는 자체개발된 MOCVD 장비를 이용한 일차원 ZnO 나노선을 성장하였다. 이러한 ZnO 나노선의 성장은 사파이어 기판과 실리콘 기판 위에서 이루어졌으며 기판의 종류와 격자상수 불일도에 따른 상이한 성장과정을 온도에 따른 나노선 성장에서 관찰할 수 있었다. 사파이어 기판의 경우, 240도의 온도에서는 박막형상을 지닌 ZnO가 온도가 320도 이상으로 상승하면서 나노선으로 변함을 보였고, 실리콘 기판의 경우 380도 이상에서 기울기률 가진 나노선을 관찰하였으며, 420도에서는 나노선을 관찰 할 수 없었다. 또한 PL 장비를 이용한 PL 강도와 성장과정을 연관하여 생각하였을 때, 나노선의 기물기가 PL 강도비과 연관성을 가진다는 것을 측정을 통해 확인하였다.

• Journal of Powder Materials
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• v.22 no.6
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• pp.391-395
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• 2015

We report on the successful fabrication of ZnO nanorod (NR)/polystyrene (PS) nanosphere hybrid nanostructure by combining drop coating and hydrothermal methods. Especially, by adopting an atomic layer deposition method for seed layer formation, very uniform ZnO NR structure is grown on the complicated PS surfaces. By using zinc nitrate hexahydrate $[Zn(NO_3)_2{\cdot}6H_2O]$ and hexamine $[(CH_2)_6N_4]$ as sources for Zn and O in hydrothermal process, hexagonal shaped single crystal ZnO NRs are synthesized without dissolution of PS in hydrothermal solution. X-ray diffraction results show that the ZnO NRs are grown along c-axis with single crystalline structure and there is no trace of impurities or unintentionally formed intermetallic compounds. Photoluminescence spectrum measured at room temperature for the ZnO NRs on flat Si and PS show typical two emission bands, which are corresponding to the band-edge and deep level emissions in ZnO crystal. Based on these structural and optical investigations, we confirm that the ZnO NRs can be grown well even on the complicated PS surface morphology to form the chestnut-shaped hybrid nanostructures for the energy generation and storage applications.

• Journal of Powder Materials
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• v.23 no.4
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• pp.270-275
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• 2016

We report on an all-solution-processed hydrothermal method to control the morphology of ZnO nanostructures on Si substrates from three-dimensional hemispherical structures to two-dimensional thin film layers, by controlling the seed layer and the molar contents of surfactants during their primary growth. The size and the density of the seed layer, which is composed of ZnO nanodots, change with variation in the solute concentration. The ZnO nanodots act as heterogeneous nucleation sites for the main ZnO nanostructures. When the seed layer concentration is increased, the ZnO nanostructures change from a hemispherical shape to a thin film structure, formed by densely packed ZnO hemispheres. In addition, the morphology of the ZnO layer is systematically controlled by using trisodium citrate, which acts as a surfactant to enhance the lateral growth of ZnO crystals rather than a preferential one-dimensional growth along the c-direction. X-ray diffraction and energy dispersive X-ray spectroscopy results reveal that the ZnO structure is wurtzite and did not incorporate any impurities from the surfactants used in this study.