• 한국세라믹학회지
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• 제39권7호
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• pp.649-656
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• 2002

Zn(NO$_3$)$_2$ 수용액과 urea[CO(NH$_2$)$_2$]를 이용한 침전법과 Self-Assembled Monolayers(SAMs)를 이용한 microcontact printing 방법으로 미세 패턴화된 ZnO 박막을 Al/si0$_2$/si 기판 위에 제조하였다. Zn(NO$_3$)$_2$와 urea를 혼합하여 제조한 Zn(OH)$_2$ 박막은 침전온도와 urea 량이 증가할수록 Zn(OH)$_2$의 침전량이 증가하였고 Zn(NO$_3$)$_2$와 urea의 반응 시간이 증가함에 따라, Zn(OH)$_2$ 박막의 두께와 입자 크기가 증가하였다. Zn(NO$_3$)$_2$와 urea의 혼합비를 1 : 8, 용액의 침전 온도를 오일 bath내에서 8$0^{\circ}C$, 반응시간을 1시간으로 하여 Al/SiO$_2$/Si 기판 위에 침전된 Zn(OH)$_2$ 박막을 $600^{\circ}C$에서 1시간 동안 열처리하여, 미세 패턴을 형성하기 위한 균질한 크기의 ZnO 박막을 제조할 수 있었다. Microcontact printing방법으로 소수성과 친수성 SAMs인 Octadecylphosphonic Acid(OPA)와 2-Carboxyethylphosphonic Acid(CPA)를 각각 Al/SiO$_2$/Si 기판 위에 선택적으로 흡착한 후에 친수성 SAM인 CPA위에 Zn(OH)$_2$를 침전시켜 미세 패턴화된 ZnO 박막을 제조할 수 있었다

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.140-143
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• 2002

In this study, we prepared ZnO/glass and $ZnO/SiO_{2}/Si$ thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated according to changing deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should have to prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and $SiO_{2}/Si$ substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.711-715
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• 2003

In this study, we prepared ZnO/glass and ZnO/SiO$_2$/Si thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated as a function of deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should be prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and SiO$_2$/Si substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.167.2-167.2
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• 2014

In this work, ZnO shell on mesoporous $SiO_2$ ($ZnO/SiO_2$) was prepared by atomic layer deposition (ALD). Diethylzinc (DEZ) and $H_2O$ were used as precursor of ZnO shell. $ZnO/SiO_2$ sample was characterized by X-ray diffraction (XRD), N2 sorption isotherms, X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM) and Fourier-transform infrared spectroscopy (FT-IR). $ZnO/SiO_2$ showed higher adsorption capacity of MB than that of bare mesoporous $SiO_2$ and the adsorption capacities of $ZnO/SiO_2$ could be regenerated by UV exposure through the photocatalytic degradation of the adsorbed MB. This system could be used for removing organic dye from water by adsorption and reused after saturation of adsorption due to its photocatalytic regeneration.

• 전기전자학회논문지
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• 제17권2호
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• 한국안전학회지
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• 제20권4호
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• pp.29-33
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• 2005

In this paper, reflectance and the dielectric characteristics for $P_2O_5-ZnO-BaO$ system and $SiO_2-ZnO-B_2O_3$ system have been investigated as a function of contents of $TiO_2$. The reflectance was decreased with increasing the contents of $TiO_2$ and the reflectance of $P_2O_5-ZnO-BaO$ system was lowered than that of $SiO_2-ZnO-B_2O_3$ system. The dielectric constant of $P_2O_5-ZnO-BaO$ system was higher than $SiO_2-ZnO-B_2O_3$ system, and the dielectric constant in the both system was increased with increasing of $TiO_2$ contents. This can be explained as the space charge effects. These results are could be applied to the under plate dielectrics of PDP required high reflective ratio and breakdown strength.

• 청정기술
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• 제22권4호
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• pp.308-315
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• 2016

수명특성이 우수한 실리콘 음극재를 제조하기 위해 졸겔법을 통해 $SiO_x/ZnO$ 복합체를 제조하였고, 제조된 복합체는 PVC를 탄소 전구체로 하여 탄소를 피복하였다. 복합체에 포함된 ZnO를 HCl로 제거하여 내부에 빈 공간을 만들어 충 방전에 따른 실리콘의 부피변화를 완화할 수 있게 하였다. 합성된 복합체의 결정구조와 형상을 파악하기 위해 XRD, SEM, TEM 분석을 실시하였다. 탄소 피복된 복합체에 포함된 탄소함량을 TGA를 통해 알아보았으며, 복합체의 기공구조를 확인하기 위해 BET 비표면적 분석과 BJH 기공분포를 확인하였다. 탄소의 추가로 향상된 전기전도성을 측정하였으며, 전기화학적 특성은 AC 임피던스 측정과 충 방전 및 수명특성을 확인하였다. $SiO_x/ZnO$시료에 탄소를 피복할 경우에 전기전도도가 증가하였으며, 방전용량도 증가하였다. 염산으로 ZnO를 제거한 시료의 경우에 표면적은 증가하였으나, 전지의 방전용량은 오히려 감소하였다. 탄소를 피복하지 않은 $SiO_x/ZnO$ 시료의 경우에 방전용량이 매우 낮았으며, 탄소를 피복한 후의 시료는 높은 충방전용량을 나타내었다. 수명특성의 경우, $C-SiO_x/ZnO$ 복합체(Zn : Si : C = 1 : 1 : 8)가 0.2 C의 전류량에서 50 사이클에서 $815mAh\;g^{-1}$의 용량으로 기존 흑연계 음극재보다 높은 용량을 나타내었다.

• 한국재료학회지
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• 제21권1호
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• pp.34-38
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• 2011

In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at $700^{\circ}C$ for 10 minutes in $N_2$ in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at $700^{\circ}C$ for 30 minutes in $N_2$. In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.

• 한국진공학회지
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• 제7권3호
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• pp.201-207
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• 1998

본 연구는 rf reactive magnetron sputtering 방법으로 증착한 ZnO 박막을 압전진동 자로 제작하였을 때 발생하는 금속전극과의 계면특성에 대해 조사하였다. 이때 ZnO 박막은 금속 아연 target을 산소분위기에서 sputtering하여 얻었다. 미리 얻은 최적성장조건으로 Cr/ZnO/Cr의 구조을 갖는 압전 진동자를 제작한 후, 금속전극과 ZnO 박막과의 계면특성을 분석하였다. 제작된 압전진동자는 I-V 측정, AES depth profile, SEM, C-V 측정등을 이용 하여 분석하였고, 이러한 분석 결과 금속전극과 ZnO 박막 사이에 $SiO_2$ 확산방지막을 쌓은 Cr/ $SiO_2$/ZnO/Cr의 구조로 ZnO 압전진동자를 제작했을 때 좋은 특성을 보임을 알 수 있었 다. 그리고, 이러한 사실은 제작된 진동자를 구동시키고 이에 대한 인가진동수에 따른 진동 변위를 측정해보므로써 확인할 수 있었다.

• 한국재료학회지
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• 제21권2호
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• pp.120-124
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• 2011

Silicon heterojunction solar cells have been studied by many research groups. In this work, silicon heterojunction solar cells having a simple structure of Ag/ZnO:Al/n type a-Si:H/p type c-Si/Al were fabricated. Samples were fabricated to investigate the effect of transparent conductive oxide growth conditions on the interface between ZnO:Al layer and a-Si:H layer. One sample was deposited by ZnO:Al at low working pressure. The other sample was deposited by ZnO:Al at alternating high working pressure and low working pressure. Electrical properties and chemical properties were investigated by light I-V characteristics and AES method, respectively. The light I-V characteristics showed better efficiency on sample deposited by ZnO:Al by alternating high working pressure and low working pressure. Atomic concentrations and relative oxidation states of Si, O, and Zn were analyzed by AES method. For poor efficiency samples, Si was diffused into ZnO:Al layer and O was diffused at the interface of ZnO:Al and Si. Differentiated O KLL spectra, Zn LMM spectra, and Si KLL spectra were used for interface reaction and oxidation state. According to AES spectra, sample deposited by high working pressure was effective at reducing the interface reaction and the Si diffusion. Consequently, the efficiency was improved by suppressing the SiOx formation at the interface.