• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1689-1691
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• 1999

The conduction characteristics of $Pr_6O_{11}$-based ZnO varistor were investigated. ZnO-$Pr_6O_{11}$-CoO-$Sm_2O_3$-based ZnO varistor were sintered at $1300^{\circ}C$ and $1350^{\circ}C$ in the addition range $0.0\sim2.0mol%$ $Sm_2O_3$, respectively. ZnO varistors which are added with 1.0mol% at each temperature exhibited best excellent conduction characteristics, namely the nonlinear exponent was 42.05 at $1300^{\circ}C$, 36.79 at $1350^{\circ}C$ and leakage current was $9.16{\mu}A$ at $1300^{\circ}C$, $11.7{\mu}A$ at $1350^{\circ}C$. Consequently, it is estimated that ZnO-$Pr_6O_{11}$-CoO-$Sm_2O_3$-based ZnO varistors, which $Sm_2O_3$ is added 1.0mol% is to be used as a basic composition of $Pr_6O_{11}$-based ZnO varistors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.178-178
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• 2007

II-VI의 넓은 밴드갭 (3.37 eV)을 가지는 ZnO는 solar cells, transparent conductive electrodes, ultraviolet light emitters, and chemical sensors 등에 응용되고 있다. 특히 고효율 ZnO계 발광 소자 구현을 위하여 MgO (7.7eV), CdO (2.0eV) 등의 고용을 통한 밴드갭을 엔지니어링 하며, 단파장 영역의 광원을 확보하기 위하여 MgO 첨가를 통한 밴드갭 에너지를 증가시키는 방향으로의 연구가 활발하다. 그러나 ZnO의 wurtzite 구조와 MgO의 rocksalt 구조의 상이한 결정구조로 인하여 Mg의 고용한계는 4 at. %, 4.1 eV 알려져 있다. 본 실험에서는 p-type Si (100), c-sapphire (0002)과 GaN 기판 위에 MgO (99.999 %)와 ZnO (99.999 %) 두가지 타겟을 사용하여 RF co-스퍼터링법으로 ZnMgO 박막을 증착 하였다. 이때 ZnO 타겟의 power 밀도는 고정 시키고 MgO 타겟의 power 밀도를 변화 시키며 Mg의 함량을 조절하여 그에 따른 광학적 구조적 특성의 변화를 연구 하였다. 성장된 ZnMgO 박막은 MgO 타겟의 power 밀도가 증가할 때 Mg의 함량이 10 at. %까지 증가 하며, 그에 따른 표면의 거칠기 및 입계 크기가 감소하며, 박막의 성장속도 또한 감소함을 SEM과 AFM을 통하여 알 수 있었다. XRD를 동하여 ZnMgO 박막의 (0002) peak의 위치는 $34.50^{\circ}{\sim}34.7^{\circ}$로 오른쪽으로 이동하며, c-축으로 성장하였음을 알 수 있다. PL과 UV룰 동하여, Mg의 함량이 증가 할수록 박막의 밴드갭 에너지는 3.2 eV에서 4.1 eV 로 증가하였다.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.882-889
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• 2011

In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• 한국결정성장학회지
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• 제18권2호
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• pp.81-86
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• 2008

열증착법(thermal evaporation method)에 의해 ZnO 나노선을 합성하였다. 나노선 합성조건에 따른 구조적 특성을 분석하여 그 합성 메카니즘을 확인하였다. ZnO 나노선 합성 시 기화 온도가 고온일수록 성장속도가 빠르고 $CO/CO_2$ 분압이 역전되는 1000$^{\circ}C$ 이상에서는 그 형태가 크게 변화하고, 성장온도 700$^{\circ}C$ 이상에서 Au 촉매가 그 기능을 하고 있음을 확인하였다. 성장된 ZnO 나노선은 380 nm에서의 blue emission을 나타냄을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.41-44
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• 1997

Using the 2 probe mothods, AC coductivities, dielectric loss factors, capacitances, and impedances were investigated to study. The electrical and sensing properties for SnO$_2$ added ZnO. In air The electrical conductivity of SnO$_2$added ZnO decrease by increasing the content of SnO$_2$, and the relative dielectric constants for 0.05, 5, 7 SnO$_2$ added ZnO are 55, 20, 14, respectively. In 3000ppm CO Gas. relative dielectric constants for 3, 5mol% SnO$_2$ added ZnO are 163, 68, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.103-106
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• 1997

The electrical properties and the sensing properties of ZnO-TiO$_2$ composites were investigated by using the complex impedance measurement and voltage-current source and measurement unit. In air, the electrical conductivity of TiO$_2$ added ZnO increase with increasing the content of TiO$_2$ and the relative dielectric constants for 3, 5 and 7mol% TiO$_2$ added ZnO are 7, 13 and 120, respectively. In 3000ppm CO gas, the relative dielectric constants for 3, 5mol% TiO$_2$ added ZnO are 25, 28, respectively.

• The Korean Journal of Ceramics
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• 제4권4호
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• pp.304-310
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• 1998

Carbothermal reduction has been one of the important processes for the production of ceramic raw materials such as silicon carbide, silicon nitride, boron carbide, etc. The process has also been one of several trials for the recovery of ZnO from ZnO-containing waste. It usually involves two consecutive steps: the evolution of Zn vapor and its oxidation with air. In this study a ZnO-containing raw material is reduced by carbon at $1250^{\circ}C$ and the evolved Zn vapor is oxidized with air, resulting in fine powders of ZnO. computer programs, THERMO and PYROSIM developed by MINTEK, are used to simulate the process thermodynamically and the results are compared with the experimental results. It is shown that the ZnO-containing raw material can be reduced and can form fine ZnO with the yield as high as 98.7% under a proper condition. Based on these results, a process is engineered for the production of ZnO in a rotary kiln at a rate of 3 tons/day. The produced ZnO powders show properties suitable to the usual applications in ceramic industries with a purity of > 95wt% and an average particle size of ∼3${\mu}m$.

• 한국세라믹학회지
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• 제43권2호
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• pp.79-84
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• 2006

We studied the microstructure and magnetic property of the pulsed DC magnetron sputtered $Zn_{\0.8}Co_{0.2}O$ film as a function of substrate temperatures. The X-ray patterns of the $Zn_{\0.8}Co_{0.2}O$ film showed a strong (002) preferential orientation at $500^{\circ}C$. The films with a crystallite size of 23-35 nm were grown in the form of nano-sized structure and this tendency was remarkable with increasing substrate temperature. The UV-visible result showed that the $Zn_{\0.8}Co_{0.2}O$ film prepared above $300^{\circ}C$ has a high optical transmittance of over $80\%$ in the visible region. The absorption bands were observed due to sp-d interchange action by $Co^{2+}$ complex ion and dd transition in the region from 500 to 700nm. The resistivity of the film was below $10^{-1}\;\Omega-cm\;above\;300^{\circ}C$. The AGM analysis results for the all films showed the magnetic hysteresis curves of ferromagnetic nature. The low electrical resistivity and room temperature ferromagnetism of ZnCoO thin films 'deposited above $300^{\circ}C$ suggested the possibility for the application to Diluted Magnetic Semiconductors (DMSs).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.209-209
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• 2009

Fabrication of p-type ZnO has already proven difficult and usually inconsistent despite numerous worldwide efforts. Many research groups studied electrical and optical properties P, Li, As, N single doped ZnO thin film. In P-doped ZnO thin film, the reproducibility of p-type conduction with $P_2O_5$ as a dopant source was shown to be relatively poor. In this study, we made P single doped and Li & P co-doped ZnO target. To investigate electrical and optical properties of P single doped and Li & P co-doped ZnO thin film using $P_2O_5$ and $Li_3PO_4$ dopant source respectively was deposited by PLD. The growth temperature was changed 500, $700^{\circ}C$ and various oxygen partial pressure and post-annealing conditions was changed temperature, different gas ambient($O_2,N_2$). We investigate that how to change electrical and optical properties as function of growth temperature, oxygen partial pressure and post-annealing(RTA).

• 한국세라믹학회지
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• 제16권3호
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• pp.142-154
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• 1979

The effects of microstructures and some additives $(CoO and Al_2O_3$) on the magnetic properties such as initial permeability, $\mu$-T curve, coercive force, and magnetic induction of MnZn ferrites have been studied. The powder was prepared by Hot Petroleum Drying Method. The basic composition of MnZn ferrites was 25.5mole % MnO, 22.0 mole% ZnO, 52.5 mole% $Fe_2O_3$. CoO in a concentration range from 0.05 to 0.5 mole% and $Al_2O_3$ from 2.5 to 7.5 mole% were added. Sintered density increased up to 97.5% of theoretical density. Permeability increased as average grain size increased, and that coercive force decreased as average grian size increased. Magnetic induction increased as sintered density increased. The variation of initial permeability with temperature in a temperature range from 0$^{\circ}$ to $60^{\circ}C$ was lowered (a flatter $\mu-T$ curve) as sintering temperature decreased. The compensation temperature To ofmagnetocrystalline anisotropy constant K1 and initial permeability varied with the species and amount of additives. When 0.05 mole% CoO was added to the basic composition, initial permeability at $15^{\circ}C$ increased from 5200 to 5900. The variation ofinitial permeability with temperature in a temperature range from 0^{\circ}to $60^{\circ}C$ was smaller (a flatter $\mu$-T curve) than that of the basic composition of Mn Zn ferrites. When 2.5 mole% $Al_2O_3$ was added, initial permeability at $15^{\circ}C$ decreased from 5200 to 3000. But the variation of initial permeability with temperature in a temperature range from 0$^{\circ}$to $60^{\circ}C$ was smaller (a flat ter $\mu-T$ curve) than when 0.05 mole% CoO was added. Experimental results showed that the conditions necessary for the occurrence of a very high permeability and a flat $\mu$-T curve were controversial even in a temperature range from $0^{\circ}$to $60^{\circ}C$.