• Advances in nano research
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• v.1 no.2
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• pp.93-103
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• 2013

An ultrasonic-mediated assisted stepwise method has been developed for depositing transparent ZnO films from aqueous solution. Rinsing in low ethylene glycol temperature was easy to produce intermediate phase of $Zn(OH)_2$, rinsing in $120^{\circ}C$ ethylene glycol was observed the diffraction peak of intermediate $Zn(OH)_2$ in early report, the rinsing temperature plays an important role in the process of $Zn(OH)_2$ phase transformed to ZnO, high rinsing temperature actually improved the intermediate phase. However, the effect of rinsing on the intermediate phase is yet to be understood clearly. The effect of different rinsing procedures, involving either of or a combination of successive ionic layer adsorption and reaction (SILAR) and ultrasonic-assisted rinsing, prior to hydrolysis in ethylene glycol was found to improve the occurrence $Zn(OH)_2$ in ZnO thin films. In the zinc complex ($[Zn(NH_3)_4]^{2+}$) solution, excess ($[Zn(NH_3)_4]^{2+}$) absorbed in glass substrate transformed incompletely to ZnO and exist as $Zn(OH)_2$ phase in thin films. In films deposited at low temperature, rinsing procedure is applied to improve excess $Zn(OH)_2$ and obtain smoother transparent thin films.

• Corrosion Science and Technology
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• v.19 no.2
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• pp.51-56
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• 2020

The objective of this study was to improve properties of plasma sprayed HAp layer to titanium substrate by introducing an intermediate layer with two different methods. Before applying Zn doped HAp coating on titanium substrate, an intermediate layer was introduced by titanium plasma spray or titanium anodization. Heat treatments were conducted for some samples after titanium intermediate layer was formed. Zn doped HAp top layer was applied by plasma spraying. Three-point bending test and pull-off adhesion test were performed to determine the adhesion of Zn doped HAp coatings to substrates. Long-term credibility of Zn doped HAp plasma sprayed coatings on titanium was assessed by electrochemical impedance measurements in Hanks' solution. It was found that both titanium plasma sprayed and titanium anodized intermediate layer had excellent credibility. Strong adhesion to the titanium substrate was confirmed after 12 weeks of immersion for coating samples with titanium plasma sprayed intermediate layer. Samples with titanium anodized intermediate layer showed good bending strength. However, they showed relatively poor resistance against pulling off. The thickness of titanium anodized intermediate layer can be controlled much more precisely than that of plasma sprayed one, which is important for practical application.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.270-275
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• 2021

ZnO was synthesized according to the transformation behavior and crystallization conditions of Zn-intermediate obtained by zinc sulfate as a precursor and NaOH, Na₂CO₃ as a alkali agents. For ZnO crystallization, Zn₄(OH)₆SO₄·H₂O and Zn₅(OH)₆(CO₃)₂·H₂O as a Zn-intermediate were calcined at 400℃ and 800℃ for 1 h, respectively, based on decomposition temperature from TGA. Zn₄(OH)₆SO₄·H₂O was confirmed to have mixed Zn₄(OH)₆SO₄·H₂O and ZnO at 400℃, and was completely thermally decomposed at 800℃ to form ZnO phase. The prepared Zn₅(OH)₆(CO₃)₂·H₂O as a Zn-intermediate by the reaction with Na₂CO₃ was transformed to a complete ZnO crystallization over 400℃. Nano-sized ZnO can be synthesized at a relatively lower calcination temperature through the reaction with Na₂CO₃.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.574-577
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• 2001

GaN thin films on sapphire were grown by rf magnetron sputtering with ZnO buffer layer. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The improved film quality has been obtained by using thin ZnO buffer layer. Using Auger electron spectroscopy(AES), it was observed that the annealing process improved the GaN film quality. The surface roughness according to the annealing temperatures(700, 900, 1100$^{\circ}C$) were investigated by AFM(atomic force microscopy) and it was confirmed that the crystallization was improved by increasing the annealing temperature. Photoluminescence at 8K shows a near-band-edge peak at 3.2eV with no deep level emission.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.253-253
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• 2011

ZnTe semiconductor is very attractive a material for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. The optoelectronic properties of ZnTe:O film allow to expect a large optical gain in the intermediate emission band, which emission band lies about 0.4-0.6 eV below the conduction band of ZnTe [2]. So, the ZnTe system is useful for the production of high-efficiency multi-junction solar cells [2,3]. In this work, the ZnTe:O thin films were deposited on Al2O3 substrates by using the radio frequency magnetron sputtering system. Three sets of samples were prepared using argon and oxygen as the sputtering gas. The deposition chamber was pre-pumped down to a base pressure of 10-7 Torr before introducing gas. The deposition pressure was fixed at 10-3 Torr throughout this work. During the ZnTe deposition, the substrate temperature was 300 oC. The optical properties were also investigated by using the ultraviolte-visible (UV-Vis) spectrophotometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.247.1-247.1
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• 2016

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

• Transactions of Materials Processing
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• v.8 no.3
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• pp.227-227
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• 1999

The effects of intermediate annealing (IA) and the final cold rolling (CR) condition on the microstructure and sagging resistance during brazing were investigated using three layer clad sheets composed of the Al-7.5 wt.%Si alloy (filler, thickness: 10 ㎛)/Al-1.3 wt.%Mn based alloy (core, 80㎛)/Al-7.5 wt.%Si alloy (filler, 10㎛). Also, the effect of 1.2∼2 wt.% Zn addition into the core on the sagging resistance of the clad sheets was determined. It was revealed that all the clad sheets fabricated by the optimum condition (IA at 690 K and CR to 20∼45%) show excellent sagging resistance with a limited erosion due to the formation of a coarsely recrystallized grain structure in the core during brazing. It was also revealed that the recrystallization behavior of the Al-1.3 wt.%Mn based alloy is hardly affected by the addition of 1.2-2 wt.%Zn during the brazing cycle. Therefore, the sagging resistance of the clad sheets is found to be governed not by the Zn content added in the A1-1.3wt.%Mn based core, but by the intermediate annealing and final cold rolling condition.

• Bulletin of the Korean Chemical Society
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• v.6 no.4
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• pp.230-233
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• 1985

Kinetic data of the Zn(Ⅱ) ion-catalyzed hydrolysis of 2-acetylpyridineketoximyl acetate (S) are measured. The reaction proceeds through the accumulation of an intermediate (I). 2-Acetylpyridineketoxime (Ox) is released in the breakdown step of I. Phenol is not formed as a part of the products, and, therefore, diphenyl phosphate and Ox are produced by the breakdown of I. Based on the dependence of the rates for the formation and the breakdown of I on [Zn(Ⅱ)] and pH, and considering the UV spectral properties of I, the structure of I is tentatively assigned as the penta-covalent intermediate formed by the addition of a water molecule to S.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

• Journal of the Korean Ceramic Society
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• v.30 no.1
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• pp.25-33
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• 1993

Formation reaction of Mn-Zn ferrite depending on various synthetic conditions of wet process was investigated using FeCl2.nH2O(n≒4), MnCl2.4H2O, ZnCl2 as starting materials. A stable intermediate precipitate was formed by the addition of H2O2. And the precipitate was hard to transform to spinel phase of Mn-Zn Fe2O4. Single phase of Mn-Zn Fe2O4 spinel was obtained above 8$0^{\circ}C$ reaction temperature. The powder had spherical particle shape and 0.02~0.05${\mu}{\textrm}{m}$ particle size. Fe(OH)2 solid solution, -FeO(OH) solid solution, -FeOOH, Mn-Zn Fe2O4 spinel were formed with air flow rate 180$\ell$/hr. However, single phase of Mn-Zn Fe2O4 spinel with cubic particle shape and 0.1~0.2${\mu}{\textrm}{m}$ particle size was formed with synthetic conditions of 8$0^{\circ}C$ and 90 munutes. The particle shape of the -FeOOH was needle-like.