• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.270-275
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• 2021

ZnO was synthesized according to the transformation behavior and crystallization conditions of Zn-intermediate obtained by zinc sulfate as a precursor and NaOH, Na₂CO₃ as a alkali agents. For ZnO crystallization, Zn₄(OH)₆SO₄·H₂O and Zn₅(OH)₆(CO₃)₂·H₂O as a Zn-intermediate were calcined at 400℃ and 800℃ for 1 h, respectively, based on decomposition temperature from TGA. Zn₄(OH)₆SO₄·H₂O was confirmed to have mixed Zn₄(OH)₆SO₄·H₂O and ZnO at 400℃, and was completely thermally decomposed at 800℃ to form ZnO phase. The prepared Zn₅(OH)₆(CO₃)₂·H₂O as a Zn-intermediate by the reaction with Na₂CO₃ was transformed to a complete ZnO crystallization over 400℃. Nano-sized ZnO can be synthesized at a relatively lower calcination temperature through the reaction with Na₂CO₃.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.914-918
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• 1997

MBS에 의해(001)GaAs기판 위에 성장된 Zn$_{1-x}$Co$_{x}$Se(x=1.0, 7.4, 9.5 %)반도체 박막과 (ZnSe/FeSe)반도체 초격자 박막의 미세구조를 투과전자현미경을 이용하여 연구하였다. Zn$_{1-x}$Co$_{x}$Se 박막 시편의 경우, 박막과 기판 사이의 격자 불일치때문에 a/2<110>형태의 버거즈 벡터를 가지는 부정합 전위를 관찰하였다. 모든 Zn$_{1-x}$Co$_{x}$Se 박막과 기판의 계면은 뚜렷이 구별되었고, 계면에서 산화물이나 이물질이 존재하지 않았다. 또한, (ZnSe/FeSe)초격자를 성장시키기 전에 GaAs기판 위에 ZnSe바닥층을 넣음으로써 고품질의 (ZnSe/FeSe)초격자를 얻었다. (ZnSe/FeSe)초격자에 있는 FeSe는 섬아연광 결정구조로 존재하였다.

• Journal of the Korea Convergence Society
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• v.8 no.11
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• pp.287-292
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• 2017

The electrodeposition of Zn on the automotive parts has been adapted However, because Zn electrodeposit needs to increase thickness for corrosion protection, it has problem of destruction of electrodeposit Zn-based electrodeposit have teen studied for corrosion protection and decreasing electrodeposit thickness. Especially; Zn-Co electrodeposit have much attention In this study, the Composition of Zn-Co electrodeposit in various manufacturing condition such as temperature, current density and electrolyte content was investigated to understand effect of electrolysis condition on Co content of specimen. The results were explained by cathode overvoltage and diffusion coefficient. As the current density increases, the electrolyte temperature decreases, and as the electrolyte concentration decreases, the overvoltage of the cathode increases. As the overvoltage of the cathode increases, the concentration polarization becomes more important than the activation polarization. Concentration polarization is determined by the diffusion of the mass transfer in the diffusion layer. In a constant concentration polarization, a large amount of elements with a large diffusion coefficient is diffused. That is, as the overvoltage of the cathode increases, the Zn content having a large diffusion coefficient increases.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.146-152
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• 2003

The waste ferrites from magnetic core manufacturing process were used to $CO_2$gas decomposition to avoid the greenhouse effects. The waste ferrites are the mixed powder of Ni-Zn and Mn-Zn ferrites core. In the reduction of ferrites by 5% $H_2/Ar$ mixed gas, the weight loss of ferrites was about 14~16wt%. After the$CO_2$gas decomposition reaction, the weight of the reduced ferrites was increased up to 11wt%.$CO_2$gas was decomposed by oxidation of Fe and FeO in reduced compound and the phase of the waste ferrite was changed to spinel structure. A new technique capable of$CO_2$decomposition as low cost process through utilizing waste ferrite was development.

• Journal of the Korean Ceramic Society
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• v.13 no.4
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• pp.5-8
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• 1976

Both oriented and non-oriented ferroxplana $Co_{1-x}Zn_xZ(Ba_3Co_{2(1-x)}Zn_{2x} Fe_{24}O_{41})$ with x=0.00, 0.45 were prepared by conventional ceramic method. The magnetostrictions of thus prepared specimens were measured by use of the three terminal capacitor device at room temperature. The magnitude of measured values was approximately five times greater than that of ZnY ferroxplana. The easy-magnetization plane at room temperature of both CoZ and Co0.55 $Zn_{0.45}$Z was their basal plane. The magentostrictions in the basal plane and the other planes showed saturated values at magnetic field intensity of about 2Koe and 4Koe, respectively. The magnetostriction constants $K_1, \; K_2, \;K_3\; and\; K_4$ for CoZ were -2.4, -10.5, -5.9 and -45.2$\times10^{-6}$ , while those for $Co_{0.55}Zn_{0.45}Z$ were +0.1, -1.2, -6.3 and -39.0$\times$10^{-6}, , respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.128.2-128.2
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• 2013

Crucially, effective catalysts must be capable of efficiently catalyzing the protonation of adsorbed CO to adsorbed CHO or COH. One of the strategies is alloying with metals with higher oxygen affinity and Au-Zn alloy is one of the best candidates. At first, we made Au-Zn alloy using vacuum evaporating method. Zn was deposited on the Au(211) surface and the amount was estimated by X-ray photoelectron spectroscopy (XPS) using the relative sensitivity of Au 4f and Zn 3d. We investigated CO adsorption on a clean Au(211) and Au-Zn alloy using temperature-programmed desorption (TPD) and XPS. From the TPD results, we can conclude that the presence of the particular step sites at the Au(211) surface imparts stronger CO bonding and Zn atoms are sitting on the step sites at the Au(211) when Zn is deposited. The XPS results show the oxygen atoms of CO bond Zn atoms on Au-Zn surface. It should be an evidence that alloying Zn atoms that has high oxygen affinity into an electrocatalyst may allow CHO* to bind to the surface through both the carbon and oxygen atoms.

• Journal of the Korean Magnetics Society
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• v.18 no.3
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• pp.120-125
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• 2008

In this study, NiCoZn ferrites with the variation of sintering temperature and chemical composition were prepared by the coprecipitation. Microstructures Crystal structure of NiCoZn ferrites were analyzed by XRD and their electric magnetic characteristics were analyzed by LCR meter and their morphology observed by SEM. We identified that these powders have a typical NiCoZn spinel structure and nanoparticles average size of 40 nm. The impurity, the initial permeability and the Q factor value are the lowest of sintered NiCoZn ferrite at $1250^{\circ}C$. Also, we measured S-parameter for $(Ni_{0.4}Co_{0.1}Zn_{0.5})Fe_2O_4$ which showed a maximum reflection loss of -3.1 dB at 6 GHz for the 2 mm thick sample. From this result, we found that the NiCoZn ferrite can be used in ferrite microwave-absorbing application at a higher frequency region (> 6 GHz).

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.147-151
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• 2007

We have investigated the half-metallicity and magnetism for the Heusler ferromagnet $Co_2$ZrSi interfaced with semiconductor ZnTe along the (001) plane by using the full-potential linearized augmented plane wave (FLAPW) method. We considered low types of possible interfaces: ZrSi/Zn, ZrSi/Te, Co/Zn, and Co/Te, respectively. From the calculated density of states, it was found that the half-metallicity was lost at all the interfaces, however for the Co/Te system the value of minority spin density of states was close to zero at the Fermi level. These facts are due to the interface states, appeared in the minority spin gap in bulk $Co_2$ZrSi, caused by the changes of the coordination and symmetry and the hybridizations between the interface atoms. At the Co/Te interface, the magnetic moments of Co atoms are 0.68 and $0.78{\mu}_B$ for the "bridge" and "antibridge" sites, respectively, which are much reduced with respect to that ($1.15{\mu}_B$) of the bulk $Co_2$ZrSi. In the case of Co/Zn, Co atoms at the "bridge" and "antibridge" sites have magnetic moments of 1.16 and $0.93{\mu}_B$, respectively, which are almost same or slightly decreased compared to that of the bulk $Co_2$ZrSi. On the other hand, for the ZrSi/Zn and ZrSi/Te systems, the magnetic moments of Co atoms at the sub-interface layers are in the range of $1.13{\sim}1.30\;{\mu}_B$, which are almost same or slightly increased than that of the bulk $Co_2$ZrSi.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.74.2-74.2
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• 2000

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.277-280
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• 2004

p-ZnO films have been grown on (0001) sapphire substrates by RF-DC magnetron co-sputtering. The p-ZnO single crystalline thin films of the thickness about 120 nm were grown successfully. The dopant (Aluminum) was sputtered simultaneously from Al metal target by DC sputtering during rf-magnetron sputtering of ZnO at the substrate temperatures of $400^{\circ}C$ and $600^{\circ}C$ respectively. The crystallinity and optical properties of as-grown P-ZnO films have been characterized.