• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.35-39
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• 2007

ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.

• Current Photovoltaic Research
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• v.5 no.4
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• pp.135-139
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• 2017

We fabricated two different transparent conducting oxide thin films of ZnO doped with Ga ($Ga_2O_3$ 0.9 wt%) as well as Al ($Al_2O_3$ 2.1 wt%) (GAZO) and ZnO doped only with Al ($Al_2O_3$ 3 wt%) (AZO). It was investigated how it affects the moisture resistance of the transparent electrode. In addition, $Cu(In,Ga)Se_2$ thin film solar cells with two transparent oxides as front electrodes were fabricated, and the correlation between humidity resistance of transparent electrodes and device performance of solar cells was examined. When both transparent electrodes were exposed to high temperature distilled water, they showed a rapid increase in sheet resistance and a decrease in the fill factor of the solar cell. However, AZO showed a drastic decrease in efficiency at the beginning of exposure, while GAZO showed that the deterioration of efficiency occurred over a long period of time and that the long term moisture resistance of GAZO was better.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.44-48
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• 2017

We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.33-38
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• 1996

In thick film resistors, the characteristics of the frit and the reaction between glass frit and conductor material play an important role for their electrical properties. In this study, various glass frits in the system of $60RO{\cdot}20SiO_2$ $15B_2O_3{\cdot}5Al_2O_3$(RO=PbO, ZnO, CdO; mole%) were mixed with $RuO_2$ and coated on 96% alumina substrate. Only the glass frit containing PbO was reacted with $RuO_2$in$RuO_{2+}$-thick film resistor and produced the new crystalline phase of $Pb_2Ru_2O_{65}$. Their electrical resistivities strongly depend on the amount of $Pb_2Ru_2O_{65}$ crystalline phase obtained, which varied with firing temperature. The sheet resistivities of these resistors were varied from $10^3\; to\; 10^6\;{\Omega}/{\Box}$ depending on heat treatment, and the absolute value of TCR was decreased as the heat treatment temperature increaed. However, $RuO_2$ did not reacted with the glass frits containing ZnO nor CdO, and the resulting showed very high sheet resistivities.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.280.2-280.2
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• 2016

The graphene, a single atomic sheet of graphite, has attracted tremendous interest owing to its novel properties including high intrinsic mobility, optical transparency and flexibility. However, for more diverse application of graphene devices, it is essential to tune its transport behavior by shifting Dirac Point (DP) of graphene. So, in the following context, we suggest a method to tune structural and electronic properties of graphene using atomic layer deposition. By atomic layer deposition of zinc oxide (ZnO) on graphene using 4-mercaptophenol as linker, we can fabricate n-doped graphene. Through ${\pi}-{\pi}$ stacking between chemically inert graphene and 4-mercaptophenol, conformal deposition of ZnO on graphene was enabled. The electron mobility of graphene TFT increased more than 3 times without considerably decreasing the hole mobility, compared to the pristine graphene. Also, it has high air stability. This ZnO doping method by atomic layer deposition can be applicable to large scale array of CVD graphene TFT.

• Journal of the Korean institute of surface engineering
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• v.34 no.6
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• pp.537-544
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• 2001

In the present study, tin-zinc alloys were coated on a cold-rolled steel sheet with variations of electrolyte concentration, additives quantity and current density employing the Hull cell and circulation cell simulator. With an addition of additives of 2m1/L, tin-zinc deposits containing 10 to 40 percent Zn revealed a good surface appearance with weak acidic electrolytes. The organic additives suppressed the Sn deposition rate and thus increased the zinc contents in tin-zinc coating layers. The zinc contents in the tin-zinc coating layers depended almost linearly on the concentrations of metal ions of tin and zinc. Temperature of the electrolyte affected the composition tin-zinc coating layer. However, the concentration of complexants revealed little effectiveness. The surface morphology of tin-zinc coating showed dense tin and zinc phases with fine equiaxed grains with the high current density.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.595-600
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• 1994

Ni0.3Zn0.7Fe2O4 ferrite specimens were fabricated by dry pressing and tape casting method. The properties of each specimen were measured and compared. In order to design and manufacture the chip devices effectively, one important criterion can be that the sintered density of the laminated body should approach close to that of the dry pressed body which is regarded as standard. This requirement could be satisfied by controlling the solid loading of the ferrite sheet, lamination temperature and pressure. Using the optimum conditions (solid loading 55 wt%, lamination temperature 6$0^{\circ}C$, lamination pressure 400 kg/$\textrm{cm}^2$, sintered at 125$0^{\circ}C$ 2h) a sintered ferrite, with the density of 5.18g/㎤ and permeability of 1390 at 0.5 MHz, were obtained.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.939-940
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• 2006

An integrated inductor using the low-temperature co-fired ceramics(LTCC ) technology for low-power electronics was fabricated. In the inductor NiZn ferrite sheet(${\mu}_r=230$), was embedded to increase inductance. The inductor has Ag spiral coil with 14 turns($7turns{\times}2layers$), a dimension of 0.6mm in width, 10um in thickness, and 0.15mm pitch. To evaluate the inductance, including the parasitic resistance, the fabricated inductor was calculated and measured. It was confirmed that calculated values were very close to the measured values. Finally as an application of the LTCC integrated inductor to low power electronic circuits, a LTCC buck DC/DC converter with 1W output power and up to 0.5MHz switching frequency using the inductor fabricated was develop.

• Journal of the Korean Ceramic Society
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• v.47 no.5
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• pp.467-473
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• 2010

The objective of this study is to prepare lead-free thick film resistor (TFR) paste compatible with AlN substrate for hybrid microelectronics. For this purpose, CaO-ZnO-$B_2O_3-Al_2O_3-SiO_2$ glass system was chosen as a sintering aid of $RuO_2$. The effects of the weight ratio of CaO to ZnO in glass composition, the glass content and the sintering temperature on the electrical properties of TFR were investigated. $RuO_2$ as a conductive and glass powder were dispersed in an organic binder to obtain printable paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C$/min in an ambient atmosphere. The addition of ZnO to glass composition and sintering at higher temperature resulted in increasing sheet resistance and decreasing temperature coefficient of resistance. Using $RuO_2$-based resistor paste containing 40 wt%glass of CaO-20.5%ZnO-25%$B_2O_3$-7%$Al_2O_3$-15%$SiO_2$ composition, it is possible to produce thick film resistor on AlN substrate with sheet resistance of $10.6\Omega/\spuare$ and the temperature coefficient of resistance of 702ppm/$^{\circ}C$ after sintering at $850^{\circ}C$.

• Journal of Welding and Joining
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• v.16 no.1
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• pp.52-62
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• 1998

Laser beam welding of zinc-coated steel, especially lap joints, has a problem of zinc vapor produced during welding which has a low vaporization temperature of 906.deg. C. It is lower than the melting temperature of steel (1500.deg. C). The high pressure formed by vaporization of zinc during laser welding splatters the molten pool and creates porosities in weld. During laser lap welds of zinc-coated steel sheets with CW CO$_{2}$ laser the gap size has been analyzed and simulated using a FEM. The simulation has been carried out in the range of gap aetween 0 and 0.16 mm. The vaporized zinc gas has effected to prevent heat from conducting toward the bottom of sheets. In vaporized zinc gas has effected to prevent heat from conducting toward the bottom of sheets. In the case of too small gap size, zinc gas has not ejected and existed between two sheets. Therefore heat was difficult to conduct from the upper sheet to lower sheet and the upper sheet could over-melted. In the case of large gap size the zinc gas has been prefectly ejected but only a part of lower sheet has melted. The optimum range of gap size in the lap welds of zinc-coated steel sheets has been calculated to be between 0.08 and 0.12 mm. According to the comparison of experiment, the simulation is proved to be acceptable and applicable to laser lap welds.