• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1995년도 하계학술대회 논문집 C
• /
• pp.1245-1247
• /
• 1995

In this paper, Analyzed structual property using SEM and XRD. The longer distance between substrate and target enhance crystalographic orientation of (110)plane, but inhibit growth of (002)plane. Also, deposited ZnO thin film on electrode layer inhibit crystalographic orientation of (002)plane, expecially Al electrode inhibit stronger than Pt layer. And using fabricated transducer, analyzed eletric and frequency characteristics.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.254-257
• /
• 2008

We have investigated the effect of source/drain electrode deposition method on a performance of top gate structured ZnO TFT performance. TFT using S/D of ITO film, consisted of bi-layer which deposited by ion beam assisted sputtering at the initial stage then deposited by DC magnetron sputtering, showed better performance compared to that using S/D of ITO deposited by just DC magnetron sputtering. Two ITO films exhibited different grain shapes and these resulted in different etching properties. We also suspect that charge trapping on the glass substrate (back channel) during the ITO film deposition may influence the characteristics of top gate structured ZnO TFT.

• Bulletin of the Korean Chemical Society
• /
• 제35권4호
• /
• pp.1050-1056
• /
• 2014

Dye sensitized solar cells were fabricated using natural dyes extracted from beetroot, rose and strawberry. The ZnO nanorod working electrode has been prepared by simple hydrothermal method. The crystallinity and morphology of the prepared electrode has been studied using X-ray diffraction and scanning electron microscopy techniques. The effect of natural dye extract temperature, pH of the dye and the solvent used for dye preparation on the solar cell characteristics have been studied. The efficiency of strawberry extract sensitized ZnO nanorod solar cells are found to be better than the other solar cells sensitized using beetroot and rose extracts.

• 반도체디스플레이기술학회지
• /
• 제10권2호
• /
• pp.57-63
• /
• 2011

Photovoltaic effect is confirmed in DSSC fabricated under the common conditions. In upper electrodes, validity of ZnO as new TCO material was investigated and an improvement of characteristics in DSSC was tried by control of process conditions at semiconductive powder layer. ZnO thin film showed very high resistivity, therefore efficiency of solar cell was lower than that of conventional ITO-related material. DSSC characteristics was able to improve by thin blocking layer doposited between the TCO and semiconductor layer.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.311-311
• /
• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.

• 한국세라믹학회지
• /
• 제30권10호
• /
• pp.819-822
• /
• 1993

The purpose of this paper is a investigation of sensing mechanism for the carbon monoxide gas in CuO infiltrated ZnO ceramics. Potential barriers between CuO and ZnO can explain the selective sensing of carbon monoxide gas in the physically contacted CuO/ZnO ceramics. A specimen having no potential barrier between CuO and ZnO was prepared to see whether the gas sensing mechanism is related to the potential barrier. CuO and ZnO was prepared to see whether the gas sensing mechanism is related to the potential barrier. CuO was painted on the non electrode sides of ZnO ceramics. The CuO painted ZnO ceramics showed that the sensitivityfor the carbon moxnoxide gas was 1.3 times as high as that for the hydrogen gas. It is almost same gas sensitivity as that of the CuO infiltrated ZnO ceramics.

• Journal of Advanced Marine Engineering and Technology
• /
• 제27권1호
• /
• pp.33-41
• /
• 2003

The optical properties of $ZnS_ySe_{1-\chi-y}:Te_{\chi}(\chi<0.08,y~0.11)$ alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_1 and Te_n(n\geq2)$cluster bound excitons, respectively. Bright green (535 nm) and blue (462 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The turn-on voltage of 2.1 V in current-voltage characteristics is very small compared to that of commercial InGaN-based LEDs (>3.4 V), indicating the formation of a good ohmic contact due to the optimized p-ZnSe/p-ZnTe multi-quantum well (MQW) superlattice electrode layers.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.211.1-211.1
• /
• 2013

We fabricate the conductive zinc oxide(ZnO) thin film using UV-enhanced atomic layer deposition. ZnO is semiconductor with a wide band gap(3.37eV) and transparent in the visible region. ZnO can be deposited with various method, such as metal organic chemical vapour deposition, magnetron sputtering and pulsed laser ablation deposition. In this experiment, ZnO thin films was deposited by atomic layer deposition using diethylzinc (DEZ) and D.I water as precursors with UV irradiation during water dosing. As a function of UV exposure time, the resistivity of ZnO thin films decreased dramatically. We were able to confirm that UV irradiation is one of the effective way to improve conductivity of ZnO thin film. The resistivity was investigated by 4 point probe. Additionally, we confirm the thin film composition is ZnO by X-ray photoelectron spectroscopy. We anticipate that this UV-enhanced ZnO thin film can be applied to electronics or photonic devices as transparent electrode.

• 대한환경공학회지
• /
• 제30권2호
• /
• pp.155-160
• /
• 2008

본 연구에서는 다단계 전기화학적 반응기를 이용하여 환원제의 투입, 전극의 종류, 수리학적 체류시간(HRT : Hydraulic Retention Time) 및 전류밀도 변화에 따른 질산성질소의 제거효율을 살펴보았다. 실험결과, 환원제 투입은 질산성질소 제거효율을 증가시켰으며 에너지투입량은 감소시켰다. 전극종류를 변화시켰을 경우, 질산성질소 제거효율 및 전류효율의 차이는 거의 없었으나 Zn 환원제의 회수를 위해 B-type(1단 : Pt-Zn, 2단 : Pt-Zn, 3단 : Pt-Zn, 4단 : Pt-Zn)을 선정하였다. 수리학적 체류시간 변화실험에서는 수리학적 체류시간과 무관하게 동일전류밀도를 공급한 실험과 수리학적 체류시간 변화에 따른 전류밀도 변화 실험 즉, 단위부피당 동일 전류량 공급 실험을 진행하였다. 실험 결과, 수리학적 체류시간과 전류밀도 변화에 의해 농도분극현상과 적용전류량의 부족현상이 발생하게 된다. 즉 수리학적 체류시간이 감소할수록 농도분극현상은 감소하지만 단위 부피당 적용전류량이 부족하게 된다. 따라서 수리학적 체류시간과 전류밀도 실험을 통해 적절한 운전조건을 도출할 수 있으며, 내부 스페이서의 설치로 확산을 증가시킬 경우 질소제거효율 및 에너지효율이 증가될 수 있을 것으로 예상된다.

• 대한환경공학회지
• /
• 제33권2호
• /
• pp.137-142
• /
• 2011

본 연구는 실험실 조건에서 비스무스 필름 전극(Bismuth film Electrode)을 사용한 양극산화벗김분석법(Anodic Stripping Voltammetry)에서 비스무스의 첨가 농도와 적정 전해질을 선택하여 최적 조건을 산출하고 최적조건을 기반으로 현장에서 중금속 모니터링 가능 여부를 확인하고자하였다. 비스무스(Bi)와 혼합중금속(Pb, Cd, Zn) 실험을 통해 정확한 중금속의 측정을 위해서는 측정하고자 하는 중금속보다 1:1 이상의 비스무스가 첨가되어야 하는 것으로 나타났다. 전해질 테스트에서는 0.1 M acetate buffer (pH 4.5), 0.1 M chloroacetate buffer (pH 2.0), 0.1 M HCl (pH 2.0), 0.1 M $HNO_3$ (pH 2.0) 중 0.1 M acetate buffer가 비스무스 필름전극을 이용한 중금속 분석에 적용 가능한 것으로 나타났다. 현장 적용시, 중금속 표준용액 100 ppb 첨가 테스트 결과 Pb은 36~45 ppb, Cd는 84~91 ppb, Zn은 90~98 ppb가 측정되었다. 첨가한 중금속보다 낮은 농도로 중금속이 측정되는 것은 현장수 매질 효과에 의한 것으로 파악되었으며, 추후 현장수 매질과 중금속 측정의 상관관계에 대한 연구가 진행될 예정이다.