• Title/Summary/Keyword: Zn electrode

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A Study on the Fabrication and Detection of Cd$_{80}$ Zn$_{20}$Te Gamma-ray detector with MIM Structure (Cd$_{80}$ Zn$_{20}$Te를 사용한 MIM 구조의 감마선 탐지 소자 제작 및 탐지 특성에 관한 연구)

  • 최명진;왕진석
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.4
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    • pp.47-53
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    • 1997
  • We fabricated gamma radiation detector using high resistive p-Cd$_{80}$Zn$_{20}$Te grown by high pressure bridgman method and forming au thin film electrode by chemically electroless deposition method. The device of Au/Cd$_{80}$Zn$_{20}$Te/Au is a typical MIM structure. The characteristic of current-voltage showed good linearity to 3kV/cm but it depend on the square of electric field over 3kV/cm. As the results of rutherford backscattering spectroscope(RBS) and auger spectroscope on the Au/Cd$_{80}$Zn$_{20}$Te, Au penetrated to the surface of Cd$_{80}$Zn$_{20}$Te detector absorbed slightly high energy radiation like a few hundred keV and showed good performance to detect low energy gamma ray.mma ray.

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Fabrication of H2 Gas Sensor Based on ZnO Nanarod Arrays by a Sonochemical Method

  • Lee, Mi-Sun;Oh, Eu-Gene;Jeong, Soo-Hwan
    • Bulletin of the Korean Chemical Society
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    • v.32 no.10
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    • pp.3735-3737
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    • 2011
  • We report a simple method for fabricating ZnO gas sensors via a sonochemical route and their $H_2$ gas sensing properties. Vertically aligned ZnO nanorod arrays as a sensing material were synthesized on a Pt-electrode patterned alumina substrate under ambient conditions. The advantage of the proposed method is a high speed of processing. The gas sensor based on ZnO nanorod arrays with large specific surface area showed a high response to $H_2$ and a detection limit of 70 ppm at $250^{\circ}C$. Also, their response and recovery time were relatively short and a complete regeneration was observed. A mechanism for sensing $H_2$ gas on the surface of ZnO nanorods is proposed.

A study on the properties of transparent conductive ZnO:Al films on variation substrate temperature (기판온도 변화에 따른 ZnO:Al 투명 전도막의 특성 변화)

  • 양진석;성하윤;금민종;손인환;신성권;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.525-528
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    • 2001
  • ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering (FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of O$_2$ gas and substrate temperature. When the of gas rate of 0.3 and substrate temperature 200$^{\circ}C$ , ZnO:Al thin film had strongly oriented c-axis and lower resistivity(<10$\^$-4/Ω-cm).

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Property of Spin-sprayed ZnO Film on PC Substrate (스핀 스프레이법으로 PC 기판에 제작한 산화아연 박막의 특성)

  • Hoong, Jeongsoo;Matsushita, Nobuhiro;Katsumata, Ken-ichi;Park, Yongseo;Kim, Kyunghwan
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.3
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    • pp.27-30
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    • 2018
  • In this study, ZnO film was deposited on polycarbonate substrate by spin-spray method at low substrate temperature of $85^{\circ}C$. Surface morphology of ZnO films was changed by adding citrate from rod to dense structure. As-deposited ZnO film indicated high transmittance above 80%. In case of the resistivity, as-deposited ZnO film had high resistivity due to the existence of organic substance in the film. However, organic substance was removed and resistivity was decreased to $3.9{\times}10^{-2}{\Omega}{\cdot}cm$, after UV irradiation.

Development and Application of Electrode for a New Secondary Aqueous Cell (새로운 수용성 2차 전지용 전극의 개발과 응용)

  • Hwang, Kum-Sho
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.41 no.2
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    • pp.165-170
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    • 2005
  • Al-Zn alloy/$MnO_2$, seawater cell was considered as a primary aqueous cell with an average voltage range from 1.0 to 1.1V, and the electrolyte of seawater was uptaken into the cell. Eventually, the capacity of its usage will be used for long-term. However, the more use of this cell, the higher corrosion phenomenon of the electrode occurred. Due to its corrosion phenomenon, one main default has been observed with gradual decrease during a discharge process. In this research, a common-used active material for anode was $LiNiO_2$. An active material for cathode, $Zn_{X}FeS_2$ was synthesized in high temperature by uptaken a small amount of 1.3 wt% of ZnS into $FeS_2$, one of the transition-metal dichalcogenides in high temperature. Consequently, based on their usages shown above, this secondary aqueous lithium cell could be more developed. This cell was shown as remarkable charge/discharge performance during the charge/discharge processes. This cathode with active material was given a considerable efficiency of inserting $Li^+$ ions. Moreever, in accordance with the characteristic of the crystal structure for $Zn_{x}FeS_2$, a small amount of ZnS was added which made it possible to reduce prominently velocity of corrosion during the charge/discharge cycle. By applying those merits, Al-Zn alloy/$MnO_2$ seawater cell will be used as a fundamental data in order to transform into a secondary aqueous cell.

Effect of wet/dry transition on the atmospheric corrosion of Zn (아연의 대기부식에 미치는 주기적 침적/건조 효과)

  • Kim, Ki-Tae
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 1998.05a
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    • pp.3-3
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    • 1998
  • The atmospheric corrosIOn properties of Zinc (Zn) under wet/dry transition of $H_20$ film were investigated in this study. The atmospheric corrosion of metal is usually occurred as a result of repetitious thickness transition (so called wet/dry transition) of liquid phase which is covering the metal surface. Corrosion potential and the polarization behaviour of Zn during liquid film thickness transition were measured by Kelvin probe method which IS using vibrating reference electrode without touching the liquid film. The oxidized states of Zn as a result of successive wet/dry transition were also investigated by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The results show that the corrosion potential and the corrosIOn rate of Zn both are increasing during drying. However, the corrOSIon rate is decreasing again when the Zn surface is completely dried while the corrosion potential still remains high. This behaviour can be explained by the polarization behaviour change of Zn according to the $H_20$ film thickness change. The completely dried surface is consisted mostly with Zn and ZnO phases. After a number of cycles of wet/dry transition, however, the oxidized Zn phase of ${\varepsilon}-Zn(OH)_2$, which has rather voluminous and defected structure, were found.

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Fabrication of ZnO Nanorod-based Electrochemical Luminescence Cells and Fundamental Luminescence Properties (산화아연 나노로드 전극을 이용한 전기화학발광 셀의 제작 및 발광특성 고찰)

  • Oh, Hyung-Suk;Sung, Youl-Moon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.63 no.1
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    • pp.76-79
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    • 2014
  • We report Zinc oxide (ZnO) nanorods synthesis and electrochemical luminescence (ECL) cell fabrication. The ECL cell was fabricated using the electrode of ZnO nanorods and Ru(II) complex ($Ru(bpy)_3{^{2+}}$) as a luminescence materials. The fabricated ECL cell is composed of F-doped $SnO_2$ (FTO) glass/ Ru(II)/ZnO nanorods/FTO glass. The highest intensity of the emitting light was obtained at the wavelength of ~620 nm which corresponds to dark-orange color. At a bias voltage of 3V, the measured ECL efficiencies were 5 $cd/m^2$ for cell without ZnO nanorod, 145 $cd/m^2$ for ZnO nanorods-$5{\mu}m$, 208 $cd/m^2$ for ZnO nanorods-$8{\mu}m$ and 275 $cd/m^2$ for ZnO nanorods-$10{\mu}m$, respectively. At a bias voltage of 3.5V, the use of ZnO nanorods increases ECL intensities by about 3 times compared to the typical ECL cell without the use of ZnO nanorods.

Crystal Structure and Optical Absorption of ZnO Thin Films Grown by Electrodeposition (전착법에 의한 ZnO 박막의 결정구조 및 광흡수 특성)

  • Choi, C.T.;Seo, J.N.
    • Journal of Sensor Science and Technology
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    • v.9 no.6
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    • pp.455-460
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    • 2000
  • Zinc oxide(ZnO) thin films were cathodically deposited on ITO glass from an aqueous zinc nitrate electrolyte. Three main fabrication parameters were taken into account : deposition potential, solution concentration and growth temperature. Different layers of ZnO thin films grown by varying the three parameters were studied by X-ray diffraction, scanning electron microscope and optical absorption spectroscopy. The prepared ZnO thin films were shown as a hexagonal wurtzite structure on the X-ray diffraction patterns and the good quality of ZnO thin films were obtained by potentiostatic cathodic deposition at -0.7V vs. Ag/AgCl reference electrode onto ITO glass from aqueous 0.1 mol/liter zinc nitrate electrolyte at $60^{\circ}C$.

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A Study on the Characteristics of Galvalume Sheet (55%A1-43.4%Zn-1.6%Si) (55% A1 - 43.4% Zn - 1.6% Si 합금도금 강판의 특성에 관한 연구)

  • 김순경
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 1997.10a
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    • pp.310-315
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    • 1997
  • An extensive corrosion study was initiated by galvalume steel sheet manufacturing company to clarify the corrosion behavior of zinc and zinc and zinc-alloy coated automotive sheet steel in out panel and electrical application. Since the early 1980's the use of zinc and aluminum alloy coated steel for vehicular corrosion protection has increased drastically. This paper describes the evaluation of formability, weldability and painted corrosion performance of galvalume steel sheet. This paper presents an overview of the program and some initial test results on the weldability, lifetime of the electrode tip shape of the spot welding and corrosion protection. Galvalume steel sheet improved corrosion performance and spot weldability of galvalume steel has no problem for the variation of welding current. And tip lifetime was changed according to the influence of shape.

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Antireflective ZTO/Ag bilayer-based transparent source and drain electrodes for highly transparent thin film transistors

  • Choe, Gwang-Hyeok;Kim, Han-Gi
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.110.2-110.2
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    • 2012
  • We reported on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for all-transparent ZTO channel based thin film transistors (TFTs). The ZTO/Ag bilayer is more transparent (83.71%) and effective source/drain (S/D) electrodes for the ZTO channel/Al2O3 gate dielectric/ITO gate electrode/glass structure than ZTO/Ag/ZTO trilayer because the bottom ZTO layer in the trilayer increasea contact resistance between S/D electrodes and ZTO channel layer and reduce the antireflection effect. The ZTO based all-transparent TFTs with ZTO/Ag bilayer S/D electrode showed a saturation mobility of 4.54cm2/Vs and switching property (1.31V/decade) comparable to TTFT with Ag S/D electrodes.

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