• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.895-897
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• 2008

ZnO films were fabricated using rf-magnetron sputter deposition process with different $N_2$ ambient. N-content in N-doped ZnO films was less than 1%. The wavelength of the highest intensity PL peak of N-doped ZnO was shifted to higher wavelength with increasing $N_2$ flow rate in the deposition ambient. These results indicated that the optical property of ZnO was significantly affected by the defect level created by doping with a very small amount of N.

• Journal of the Korean Ceramic Society
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• v.38 no.2
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• pp.112-116
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• 2001

고상반응법에 의한 제조한 ZnGa$_2$O$_4$형광체에 Li 및 Tm 원소를 도핑함에 따른 발광특성을 조사하였다. 254nm 여기 하에서, 환원 처리된 ZnGa$_2$O$_4$형광체는 245nm에서 흡수피크와 380nm에서 발광피크를 나타내며, 이는 스피넬 구조에서 Ga$^{3+}$ 이온의 $^4$T$_2$$\longrightarrow$$^4$A$_2$천이에 기인한다. ZnGa$_2$O$_4$형광체에 있어서 Li 및 Tm을 도핑했을 경우가 도핑하지 않은 시료에 비해 발광강도 및 색순도가 개선되었으며, Li 및 Tm을 각각 0.1 mol, 0.01 mol 첨가했을 때 가장 우수한 발광강도 및 색순도 특성을 보였다.

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.84-89
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• 2006

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.266.2-266.2
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• 2016

최근 디스플레이 산업의 확대에 따라 투명 전도 산화물(Transparent Conducting Oxides:TCOs)의 수요가 급증하고 있다. 이 중 ZnO는 wide bandgap (3.37eV)와 large exciton binding energy (60meV)의 값을 가져 차세대 투명 전도 산화물, LED와 LD 등의 소자 소재로 각광받고 있다. ZnO는 electron을 내어놓는 native defect 때문에 기본적으로 n-type 물성을 띈다. 그래서 dopant를 이용해 p-type ZnO를 제작할 때 native defect를 줄이는 것이 중요한 요점이 된다. 이 때 buffer layer를 사용하여 native defect를 줄이는 방법이 사용되고 있다. 본연구에서는 RF-magnetron sputtering법을 이용하여 c-plane sapphire 기판 위에 다양한 조건의 ZnO buffer layer를 증착하고, 그 위에 ZnO:(Al,P) co-doping한 APZO를 증착하였다. ZnO buffer layer 증착조건의 변수는 증착온도와 Ar:O2의 비율을 변수로 두었다. 이러한 박막을 FE-SEM, XRD, Hall effect measurement, AFM을 통하여 미세구조와 물성을 관찰하였다. 이 때 APZO보다 낮은 증착온도에서 ZnO buffer layer가 증착되면 APZO를 증착하는 동안 chamber 내부에서 열처리하는 효과를 얻게 되고, UHV(Ultra High Vaccum)에서 열처리 될 때 ZnO buffer layer의 mophology와 결정성이 변하게 되는 모습을 관찰아혔다. 또한 본 실험을 통해 ZnO buffer layer의 증착 온도가 APZO의 증착온도보다 높을 때 제어 가능한 실험이 됨을 확인 할 수 있었다.

• Korean Journal of Materials Research
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• v.25 no.6
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• pp.300-304
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• 2015

Nanorod ZnO and spherical nano ZnO for gas sensors were prepared by hydrothermal reaction method and hydrazine method, respectively. The nano-ZnO gas sensors were fabricated by a screen printing method on alumina substrates. The gas sensing properties were investigated for hydrocarbon gas. The effects of Co concentration on the structural and morphological properties of the nano ZnO:Co were investigated by X-ray diffraction and scanning electron microscope (SEM), respectively. XRD patterns revealed that nanorod and spherical ZnO:Co with a wurtzite structure were grown with (100), (002), (101) peaks. The sensitivity of nanorod and spherical ZnO:Co sensors was measured for 5 ppm $CH_4$ and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity to the $CH_4$ and $CH_3CH_2CH_3$ gas of spherical nano ZnO:Co sensors was observed at Co 6 wt%. The spherical nano ZnO:Co sensor exhibited a higher sensitivity to hydrocarbon gas than nanorod ZnO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1010-1013
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• 2001

Zinc oxide(ZnO) films were prepared by ultrasonic spray pyrolysis on indium (In) films deposited by evaporation and subsequently submitted to rapid thermal annealing (RTA). The RTA was processed in air or a vacuum ambient. The crystallographic properties and surface morphologies of the films were characterized before and after the RTA by X-ray diffraction (XRD) and scanning electron microscopy(SEM), respectively. The resistivity variation of the films with RTA temperature and time was measured by the 4-point probe method. Auger electron spectroscopy(AES) was carried out to figure out the distribution of indium atoms in the ZnO films. The resistivity of the ZnO on In(ZnO/In) films decreased to 2${\times}$10$\^$-3/ $\Omega$cm by diffusion of the In. The In diffusion into the ZnO films roughened the surface of the ZnO films. The results of depth profile by AES showed a hump of In atoms around ZnO/In interface after the RTA at 800$^{\circ}C$, which disappeared by the RTA at 1000$^{\circ}C$. The effects of temperature, time and ambient during the RTA on the structural and electrical properties of the ZnO/In films were discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.625-628
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• 2002

The electrical properties of the praseodymium-based ZnO varistor ceramics, which are composed of Zn-Pr-Co-Cr-Dy oxides were investigated with $Dy_2O_3$ amount. The average grain size of varistor ceramics was greatly decreased from 18.2 to 4.6 pm with increasing $Dy_2O_3$ amount. The calculated nonlinear exponent$({\alpha})$ in varistor ceramics without $DY_2O_3$ was only 4.9, whereas the a value of the varistors with $DY_2O_3$ was abruptly increased in the range of 48.8 to 58.6. In particular, the maximum value of a was obtained by doping of 1.0 mol% $DY_2O_3$, reaching 58.6. The measured leakage current$(I_l)$ value in varistors without $DY_2O_3$ was $85.45{\mu}A$, whereas the $I_{\ell}$ value of the varistors with $DY_2O_3$ was very abruptly decreased in the range of 1.10 to $0.12{\mu}A$. In particular, the minimum value of $I_{\ell}$ was obtained by doping of 0.5 mol% $DY_2O_3$, reaching $0.12{\mu}A$. The tan $\delta$ varied in V-shape, with minimum 2.28% at 0.5 mol% $DY_2O_3$. The donor concentration and the density of interface states were decreased in the range of $(4.66{\sim}0.25){\times}10^{18}cm^3$ and $(5.70{\sim}1.39){\times}10^{12}/cm^2$, respectively, as $DY_2O_3$ amount is increased.

• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.337-342
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• 2001

PDP(Plasma Display Panel)용 녹색 형광체인 Zn$_2$SiO$_4$:Mn에 채-dopant로 Al을 첨가하여 졸-겔법으로 합성하였다. 졸-겔법으로 제조한 형광체는 기존의 고상 반응에 의해 합성된 경우보다 낮은 온도(1000-110$0^{\circ}C$)에서 Zn$_2$SiO$_4$단일상을 형성하였으며, 300-500nm의 비교적 균일한 입자를 얻을 수 있었다. 또한, co-dopant인 Al을 첨가함으로써 발광휘도를 향상시키고, 전광시간을 줄일 수 있었다. 한편, TEOS의 가수분해시 $H_2O$/TEOS 비율을 조절하여 발광의 최적 조건을 조사하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.444-448
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• 2010

Based on first-principles calculations, we study the magnetic properties of Co, Ni, Fe, V, and Mn impurities in ZnO. The stabilities of the ferromagnetic state and the magnetic moment of each impurity largely depend on the amount of doped electron or hole. For lightly doped n-type ZnO, it is found that the doping of Ni ions is the most effective for inducing ferromagnetism, while Fe ions show the most stable ferromagnetic couplings for heavily doped n-type samples. The characteristics of the magnetic interactions of Co ions are similar with those of Fe ions, but Co ions require much larger amount of doped electron than Fe ions to show the ferromagnetic couplings. The ferromagnetic coupling between Mn and V ions is unstable in n-type conditions.