• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1277-1279
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• 1994

In the structure of ZnO/nip-SiC: H/metal substrate amorphous silicon (a-Si:H) solar cells, the effects of inserting a rear textured ZnO in the p-SiC:H/metal interface and a graded bandgap buffer layer in the i/p-SiC:H have been analysed by computer simulation. The incident light was taken to have an intensity of $100mW/cm^2$(AM-1). The thickness of the a-Si:H n, ${\delta}$-doped a-SiC:H p, and buffer layers was assumed to be $200{\AA},\;66{\AA}$, and $80{\AA}$, respectively. The scattering coefficients of the front and back ZnO were taken to be 0.2 and 0.7, respectively. Inserting the rear buffer layer significantly increases the open circuit voltage($V_{oc}$) due to reduction of the i/p interface recombination rate. The use of textured ZnO markedly improves collection efficiency in the long wavelengths( above ${\sim}550nm$ ) by back scattering and light confinement effects, resulting in dramatic enhancement of the short circuit current density($J_{sc}$). By using the rear buffer and textured ZnO, the i-layer thickness of the ceil for obtaining the maximum efficiency becomes thinner(${\sim}2500{\AA}$). From these results, it is concluded that the use of textured ZnO and buffer layer at the backside of the ceil is very effective for enhancing the conversion efficiency and reducing the degradation of a-Si:H pin-type solar cells.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.146-148
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• 2012

In our study, we have focused on optimizing good quality of ZnS buffer layer by chemical bath deposition (CBD) from a bath containing $ZnSO_4$, Thiourea and Ammonia in aqueous solution onto CIGS solar cells. The influence of deposition parameter such as pH, deposition temperature, stirring speed played a very important role on transmission, homogeneity, crystalline of ZnS buffer layer. The transmission spectrum showed a good transmission characteristic above 80% invisible spectral region. CIGS thin flim solar cell with ZnS buffer layer has been realized with the efficiency of 14.2%.

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.289-292
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• 2019

Transparent and conducting titanium doped indium oxide (TIO) thin films were deposited by RF magnetron sputtering on zinc oxide (ZnO)-coated glass substrates to investigate the effect of the ZnO buffer layer on optical and electrical properties of TIO/ZnO bi-layered films. TIO 90 nm / ZnO 10 nm films having a lower resistivity (3.09×10^-3 Ωcm) and a higher visible transmittance (80.3%) than other TIO/ZnO films were prepared in this study. Figure of merit results indicate that a 10 nm thick ZnO thin film is an effective buffer layer that enhances optical transmittance and electrical conductivity of TIO films without intentional substrate heating or post-deposition annealing.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.75-75
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• 2001

• Current Photovoltaic Research
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• v.9 no.3
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• pp.96-105
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• 2021

Even though above 22% efficiencies have been reported in Cd-free Cu(In,Ga)Se₂ (CIGS) solar cell with Zn-containing buffers, the efficiencies with Zn-containing buffers, in general, are well below 20%. One of the reasons is Zn diffusion from the Zn-containing buffer layer to CIGS film during buffer growth. To avoid the degradation, it is necessary to prevent the diffusion of Zn atoms from Zn-containing buffer to CIGS film. For the purpose, we characterized an In₂Se₃ film as a possible diffusion barrier layer because In₂Se₃ has no Zn component. It was found that an In₂Se₃ layer grown at 300℃ was very effective in preventing Zn diffusion from a Zn-containing buffer. Also, the In₂Se₃ had a large potential barrier in the valence band at the In₂Se₃/CIGS interface. Therefore, In₂Se₃ passivation has the potential to achieve a super-high efficiency in CIGS solar cells that employ Cd-free ALD processed buffers containing Zn.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.208-211
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• 2012

In the present study, a ZnO thin film, as a buffer layer of ITO (indium tin oxide) film was deposited on glass substrates by RF magnetron sputtering at low temperature of $150^{\circ}C$. In order to estimate the optical characteristics and compare with the experimental results in Glass/ZnO(100 nm)/ITO(35 nm) multilayered film, the simulation program, EMP (Essential Macleod Program) was adopted. The sheet resistance and optical transmittance of the films were measured using the four-point probe method and spectrophotometer, respectively. From X-ray diffraction patterns, all the films deposited at $150^{\circ}C$ demonstrated only the amorphous phase. Optical transmittance was the highest at a ZnO thickness of 100 nm. The ITO(35 nm)/ZnO(100 nm) film exhibits an optical transmittance of >92% at 550 nm. The multilayered film showed an electrical sheet resistance of 407 ${\Omega}/sq.$, which is significantly better than that of a single-layer ITO film without a ZnO buffer layer (815 ${\Omega}/sq.$).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.162-163
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• 2013

Single-crystal InGaZnO (IGZO) thin films were spontaneously formed as periodic layered structure along the c-axis by thermal treatment at high temperature. when the IGZO superlattice were synthesized by sol-gel method, the effects of preferred growth orientations and the flatness of ZnO buffer layer were investigated. $InGaO_3(ZnO)_2$ superlattice were favorably formed on ZnO buffer layer with single preferred orientation. Futhermore, it showed relatively high Seebeck coefficient and power factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.249-250
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• 2006

In this study, we tried to Improve c-axis orientation of ZnO thin films used in a piezoelectric layer of FBAR devices. First. ZnO deposition conditions were determined by changing various conditions of RF sputter such as RF power, pressure and $O_2$ contents. The Piezoelectric layer was deposited on ZnO buffer layer of dense structure which was formed by ALD equipment. The c-axis orientation of ZnO piezoelectric layer was measured by XRD and we confirmed fine Grains and columnar structure by SEM, AFM.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1629-1631
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• 2007

Significant process in the performance and commercialization of full-color thin-film electroluminescent(EL) displays has been achieved. This is due to the remarkable progress made in the performance of exiting EL phosphors, development of new phosphor materials, and design of new EL phosphor structures. In this paper, we fabricated thinfilm EL devices with ZnS buffer and $BaTiO_3$ electric layer with on top and bottom of phosphor layer. The effect of ZnS and $BaTiO_3$ layer on the luminance of EL device were studied.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.198-200
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• 2014

100 nm thick Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on polyethylene terephthalate (PET) and ZnO coated PET substrate and then the effect of the ZnO thickness on the optical and electrical properties of the GZO films was investigated. GZO single layer films had an optical transmittance of 83.7% in the visible wavelength region and a sheet resistance of $2.41{\Omega}/{\square}$, while the optical and electrical properties of the GZO/ZnO bi-layered films were influenced by the thickness of the ZnO buffer layer. GZO films with a 20 nm thick ZnO buffer layer showed a lower sheet resistance of $1.45{\Omega}/{\square}$ and an optical transmittance of 85.9%. As the thickness of ZnO buffer layer in GZO/ZnO bi-layered films increased, both the conductivity and optical transmittance in the visible wavelength region were increased. Based on the figure of merit (FOM), it can be concluded that the ZnO buffer layer effectively increases the optical and electrical performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.