• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.259-259
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• 2010

Periodically polarity inverted (PPI) ZnO structures on (0001) Al2O3 substrates are demonstrated by plasmas assisted molecular beam epitaxy. The patterning and re-growth methods are used to realize the PPI ZnO by employing the polarity controlling method. For the in-situ polarity controlling of ZnO films, Cr-compound buffer layers are used.[1, 2] The region with the CrN intermediate layer and the region with the Cr2O3 and Al2O3 substrate were used to grow the Zn- and O-polar ZnO films, respectively. The growth behaviors with anisotropic properties of PPI ZnO heterostructures are investigated. The periodical polarity inversion is evaluated by contrast images of piezo-response microscopy. Structural and optical interface properties of PPI ZnO are investigated by the transmission electron microcopy (TEM) and micro photoluminescence ($\mu$-PL). The inversion domain boundaries (IDBs) between the Zn and the O-polar ZnO regions were clearly observed by TEM. Moreover, the investigation of spatially resolved local photoluminescence characteristics of PPI ZnO revealed stronger excitonic emission at the interfacial region with the IDBs compared to the Zn-polar or the O-polar ZnO region. The possible mechanisms will be discussed with the consideration of the atomic configuration, carrier life time, and geometrical effects. The successful realization of PPI structures with nanometer scale period indicates the possibility for the application to the photonic band-gap structures or waveguide fabrication. The details of application and results will be discussed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.69.1-69.1
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.189-189
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• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.107-108
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• 2006

ZnO is a promising material for UV or blue LEDs p-Type ZnO thin films which are imperative for the p-n junction of LEDs are difficult to achieve because of strong compensation of intrinsic defects such as zinc interstitial and oxygen vacancy. The method of codoping group three elements and group five elements is effective for the realization of p-type ZnO films. In this study, We codoped N and Al m ZnO thin films by RF magnetron sputtering and annealed the films in sputtering chamber. Some films showed p-type conductivity m Seeback effect measurement.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.700-702
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• 2009

We present the epitaxial growth of high-quality ZnO layers by chemical vapor transport (CVT) technique on (01-12) sapphire with a ZnO buffer layer growth by metal-organic chemical vapor deposition (MOCVD). The surface of the grown ZnO epitaxial layers has atomically flats and the RMS is 0.11 nm. PL spectrum of as-grown samples exhibits two emissions originated by interactions between photon and free excitons.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.282-288
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• 2017

In this paper, GaAs/AlGaAs multi-layer structure was grown by liquid phase epitaxy with graphite sliding boat, which can be used as a device structure of a photocathode image sensor. The multi-layer structure was grown on an n-type GaAs substrate in the sequence as follows: GaAs buffer layer, Zn-doped p-type AlGaAs layer as etching stop layer, Zn-doped p-type GaAs layer, and Zn-doped p-type AlGaAs layer. The Characteristics of GaAs/AlGaAs structures were analyzed by using scanning electron microscope (SEM), secondary ion mass spectrometer (SIMS) and hall measurement. The SEM images shows that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure was grown with a mirror-like surface on a whole ($1.25mm{\times}25mm$) substrate. The Al composition in the AlGaAs layer was approximately 80 %. Also, it was confirmed that the free carrier concentration in the p-GaAs layer can be adjusted to the range of $8{\times}10^{18}/cm^2$ by hall measurement. In the result, it is expected that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure grown by the LPE can be used as a device structure of a photoelectric cathode image sensor.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.534-534
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• 2013

본 연구에서는 RF/DC 마그네트론 스퍼터링 시스템을 이용하여 co-sputtering 방법으로 TiO2와 ZnO를 이용하여 인버티드 유기태양전지용 버퍼층을 제작하고 TiO2와 ZnO의 함량에 따른 인버티드 유기 태양전지 특성을 비교하였다. Ti-Zn-O 버퍼층은 기존의 버퍼층 제작에 사용되던 용액 공정 대신 스퍼터링 시스템을 이용하여 제작하였다. ITO 전극 상부에 곧바로 Ti-Zn-O를 성막하여 Anode와 버퍼층이 일체화된 투명 전극을 제작하고 ZnO와 TiO2 함량이 유기 태양전지의 특성에 미치는 영향을 연구하였다. 버퍼층의 TiO2와 ZnO 함량에 따른 광학적, 구조적특성을 UV/Vis spectrometry와 X-ray diffraction (XRD), TEM 등으로 분석하였으며, Ti-Zn-O 박막의 실제 버퍼 층으로서의 적용 가능성을 알아보기 위해 인버티드 유기태양전지로 제작하여 그 특성을 평가하였다. 기존의 인버티드 유기태양전지의 특성이 fill factor of 55.58%, short circuit current of 8.33 mA/cm2, open circuit voltage of 0.66 V, efficiency 3.06%인데 반해 최적 조건의 Ti-Zn-O 버퍼층을 적용했을 경우 fill factor of 52.05%, short circuit current of 8.81 mA/cm2, open circuit voltage of 0.66 V, efficiency 3.03%인 우수한 유기태양전지의 특성을 보임으로써 스퍼터링 공법으로 제작된 Ti-Zn-O 박막의 인버티드 유기태양전지용 버퍼 층으로서의 적용 가능성을 확인하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.32-32
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• 2009

실리콘 박막 태양전지에서 전면 투명전도막(TCO)은 태양전지의 전기, 광학적 특성을 결정하는 중요한 기능을 한다. ZnO:Al TCO는 기존에 사용되던 $SnO_2:F$와는 비정질 실리콘(a-Si:H) 박막 태양전지의 윈도우 층으로 사용되는 p a-SiC:H와의 일함수(work function) 차이로 인해 접촉전위(contact barrier)를 형성하게 되며 이로 인해 태양전지의 충진율(fill factor)이 $SnO_2:F$에 비해 감소하는 단점을 보인다. 본 연구에서는 ZnO:Al/p a-SiC:H 계면의 접촉전위 발생원인 및 태양전지 충진율 감소현상에 관한 정확한 원인규명을 위해 다양한 특성을 갖는 버퍼층을 삽입하여 계면특성 및 태양전지의 동작특성을 분석하고자 한다.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1794-1798
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• 2018

We have grown famatinite $Cu_3SbS_4$ films by using sulfurization of Cu/Sb stack film. Sulfurization at $500^{\circ}C$ produced famatinite $Cu_3SbS_4$ phase, while $400^{\circ}C$ and $450^{\circ}C$ sulfurization exhibited unreacted and mixed phases. The fabricated $Cu_3SbS_4$ film showed S-deficiency, and secondary phase of $Cu_{12}Sb_4S_{13}$. The secondary phase was confirmed by X-ray diffraction, Raman spectroscopy, photoluminescence and external quantum efficiency measurements. We have also fabricated solar cell in substrate type structure, ITO/ZnO/(Zn,Sn)O/$Cu_3SbS_4$/Mo/glass, where $Cu_3SbS_4$ was used as a absorber layer and (Zn,Sn)O was employed as a Cd-free buffer. Our best cell showed power conversion efficiency of 0.198%. Characterization results of $Cu_3SbS_4$ absorber indicates deep defect (due to S-deficiency) and low shunt resistance (due to $Cu_{12}Sb_4S_{13}$ phase). Thus in order to improve the cell efficiency, it is required to grow high quality $Cu_3SbS_4$ film with no S-deficiency and no secondary phase.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.399-399
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• 2011

We studied the structural and optical characterization of zinc sulfide (ZnS) thin films by RF magnetron sputtering on glass substrates. The substrate temperature was varied in the range of 100$^{\circ}C$ to 400$^{\circ}C$. The XRD analyses indicated that ZnS films had cubic structures with (111) preferential orientation and grain size varied from 20 to 60 nm, increasing with substrate temperatures. The optical properties were carried out by UV-visible spectrophotometer. Transmission measurement showed that the films had more than 70% transmittance in the wavelength larger than 400 nm, and the absorption edge shifted to shorter wavelength with the increase of substrate temperatures.