• Journal of Power System Engineering
• /
• v.15 no.4
• /
• pp.75-78
• /
• 2011

There are various types of materials used in electronic industry, such as electrode material, conductor, insulator, anode, cathode and semiconductor. Electrode material type is Cu, Ti, ZnO and so on. Especially if we use mixed ZnO in soil cement or silica gel, we can have advantages in ice road to prevent freezing. We have great impact if we use supported in inorganic substances like silica gel. In this paper we have studied that ZnO supported silica gel and its properties. Zinc acetate dissolved in distilled water were loaded on the silica gel by the reaction with ammonia at $80^{\circ}C$. And we investigated particle structures of ZnO by scanning electron microscopy(SEM) and X-ray diffraction(XRD).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.62-62
• /
• 2007

ZnO 박막이 성장된 Si기판을 이용하여 Thermal evaporation을 사용하여 온도에 따라 합성된 1-D의 구조의 ZnO nanorods의 형상과 특성에 대하여 연구를 하였다. 합성온도는 $700^{\circ}C{\sim}900^{\circ}C$를 사용하였고 온도가 낮아짐에 따라 Vertical한 1-D ZnO가 합성이 되는 것을 알 수 있었다. 특히, $700^{\circ}C$에서 합성된 1-D ZnO는 ~100nm의 폭을 가지고 800nm의 길이의 Nanorods로 성장이 되는 것을 알 수 있었고, 상온 PL측정을 통해 온도가 증가함에 따라 O 결핍 또는 Zn의 과잉에 의한 Deep level emission이 증가하는 것을 알 수 있었다.

• Korean Journal of Optics and Photonics
• /
• v.9 no.2
• /
• pp.70-75
• /
• 1998

The ZnS-SiO$_2$ composite films were fabricated by codeposition from two independent sources. The optical properties and microstructures of these composite films were investigated. The refractive indices of the composite films were compared those by Drude's fomula and showed a good agreement. it showed that microstructures of composite films are an armorphous. But microstructures of composite films with ion assisted deposition are changed from an armorphous to crystalline with increasing Zn mole fractions. We designed and fabricated a single layer antireflection coating on the crystalline silicon substrate using the refractive index of the composite films.

• Advances in materials Research
• /
• v.11 no.3
• /
• pp.225-235
• /
• 2022

It includes the synthesis of pristine ZnO nanoparticles and a series of Ag-doped zinc oxide nanoparticles was carried out by reflux method by varying the amount of silver (1, 3, 5, 7 and 9% by mol.). The morphology of these nanoparticles was investigated by SEM, XRD and FT-IR techniques. These techniques show that synthesized particles are homogenous spherical nanoparticles having an average particle size of about 50-100 nm along with some agglomeration. The photocatalytic activity of the ZnO nanoparticles and Ag doped ZnO nanoparticles were investigated via photodegradation of methylene blue (MB) as a standard dye. The data from the photocatalytic activity of these nanoparticles show that 7% Ag-doped ZnO nanoparticles exhibit much enhanced photocatalytic activity as compared to pristine ZnO nanoparticles and other percentages of Ag-doped ZnO nanoparticles. Furthermore, 7% Ag-doped ZnO was made composites with sulfur-doped graphitic carbon nitride by physical mixing method and a series of nanocomposites were made (3.5, 7.5, 25, 50, 75% by weight). It was observed that the 25% composites exhibited better photocatalytic performance than pristine S-g-C 3 N 4 and pure 7% Ag-doped ZnO. Tauc's plot also supports the photodegradation results.

• Journal of the Korean Chemical Society
• /
• v.61 no.4
• /
• pp.179-184
• /
• 2017

In this paper, a $ZnO/SiO_2$ nano-composite was prepared by a simple chemical method at room temperature. For the synthesis of ZnO nanoparticles (NPs), a sonochemical method was used, and $SiO_2$ NPs were prepared by precipitation method. The formation of $ZnO/SiO_2$ NCs was characterized by X-ray diffractometer (XRD) and confirmed by field-emission scanning electron microscopy (FE-SEM) and Fourier transform infra-red spectroscopy(FT-IR). The photocatalytic properties of $ZnO/SiO_2$ NCs formed at different concentrations of $SiO_2$ were evaluated by rhodamine-B dye. It was confirmed that increasing $SiO_2$ concentration resulted in an increase in the photocatalytic property. In addition, the antibacterial activity of $ZnO/SiO_2$ NCs was conducted against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus). As a result, the antibacterial activities of E.coli and S. aureus were increased in the presence of thick SiO NPs layer.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2012.05a
• /
• pp.461-462
• /
• 2012

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.3
• /
• pp.329-332
• /
• 2004

ZnO thin films were grown with different plume-substrate angles by pulsed laser deposition (PLD) to control the amount of ablated species arriving on a substrate per laser shot. The angles between plume propagation direction and substrate plane (P-S angle) were 0$^{\circ}$, 45$^{\circ}$ and 90$^{\circ}$. The growth time was changed in order to adjust film thickness. From the XRD pattern exhibiting a dominant (002) and a minor (101) XRD peak of ZnO, all films were found to be well oriented along c-axis. From the AFM image, it was found that the grain size of ZnO thin film was increased, as P-S angle decreased. UV intensity investigated by PL (Photoluminescence) increased as P-S angle decreased.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.22 no.9
• /
• pp.62-68
• /
• 2008

This paper describes the electrical characteristics of ZnO surge arresters associated with the variation of surrounding conditions. To investigate the deterioration behaviors of ZnO surge arresters due to lightning surges, 8/20[${\mu}s$], 2.5[kA] impulse currents were injected to the ZnO surge arrester under test. The leakage currents of ZnO surge arrester subject to power frequency AC voltage were measured in different surrounding temperature and wet conditions. As a result, it was found that the leakage current is increased and its asymmetry is pronounced as the number of injection of the impulse current and the ambient temperature increase. Also, in the wet test the outside leakage current flowing through the housing surface of the ZnO surge arrester is much larger than the intrinsic leakage current of ZnO surge arrester element. The results obtained in this work can be a lied as factors of improving the reliability and performance of monitoring system for surge arresters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.04a
• /
• pp.65-66
• /
• 2008

The realization and origin of p-type ZnO are main issue for photoelectronic devices based on ZnO material. N-doped and nominally undoped p-type ZnO films were achieved on silicon (100) and homo-buffer layers by RF magnetron sputtering and post in-situ annealing. The undoped film shows high hole mobility of 1201 $cm^2V^{-1}s^{-1}$ and low resistivity of $0.0454\Omega{\cdot}cm$ with hole concentration of $1.145\times10^{17}cm^{-3}$. The photoluminescence(PL) spectra show the emissions related to FE, DAP and defects of $V_{Zn}$, $V_O$, $Zn_O$, $O_i$ and $O_{Zn}$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.27 no.3
• /
• pp.79-86
• /
• 2013

In order to analyze the electrical performance of ZnO surge arresters stressed by the combined DC and AC voltages that are generated in DC/AC converter systems, the leakage current properties of ZnO surge arrester blocks deteriorated by impulse currents were investigated. The test specimens were deteriorated by the 8/$20{\mu}s$ impulse current of 2.5kA and the leakage currents flowing into the deteriorated zinc oxide(ZnO) arrester blocks subjected to the combined DC and power frequency AC voltages are measured. As a result, the leakage currents flowing through deteriorated ZnO surge arrester blocks were higher than those flowing through the fine ZnO surge arrester blocks and the larger the injection number of 8/$20{\mu}s$ impulse current of 2.5kA is, the greater the leakage current is. The leakage current-voltage curves(I-V curves) of the fine and deteriorated ZnO surge arrester blocks stressed by the combined DC and AC voltages show significant difference in the low conduction region. Also the cross-over phenomenon is observed at the voltage close to the knee of conduction on plots of I-V curves.