• 한국세라믹학회지
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• 제53권5호
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• pp.521-528
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• 2016

Kinetic Monte Carlo (KMC) and graph searches show that proton conduction limiting barriers and trajectories in $BaZr_{0.875}Y_{0.125}O_3$ are affected by the presence of other protons. At 1000 K, KMC limiting conduction barriers increase from 0.39 eV to 0.45 eV as the proton number is increased. The proton-proton radial distribution begins to rise at $2{\AA}$ and peaks at $4{\AA}$, which is half the distance expected, based on the proton concentration. Density functional theory (DFT) calculations find proton/proton distances of 2.60 and $2.16{\AA}$ in the lowest energy two-proton configurations. A simple average of the limiting barriers for 7-10 step periodic long range paths found via graph theory at 1100 K shows an increase in activation barrier from 0.32 eV to 0.37 eV when a proton is added. Both KMC and graph theory show that protons can affect each other's pathways and raise the overall conduction barriers.

• Smart Structures and Systems
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• 제11권4호
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• pp.349-364
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• 2013

Recently, researchers in the field of structural health monitoring (SHM) have been rigorously striving to replace the conventional NDE techniques with the smart material based SHM techniques, employing smart materials such as piezoelectric materials. For instance, the electromechanical impedance (EMI) technique employing piezo-impedance (lead zirconate titanate, PZT) transducer is known for its sensitivity in detecting local damage. For practical applications, various external factors such as fluctuations of temperature and loading, affecting the effectiveness of the EMI technique ought to be understood and compensated. This paper aims at investigating the damage monitoring capability of EMI technique in the presence of axial stress with fixed boundary condition. A compensation technique using effective frequency shift (EFS) by cross-correlation analysis was incorporated to compensate the effect of loading and boundary stiffening. Experimental tests were conducted by inducing damages on lab-sized aluminium beams in the presence of tensile and compressive forces. Two types of damages, crack propagation and bolts loosening were simulated. With EFS for compensation, both cross-correlation coefficient (CC) index and reduction in peak frequency were found to be efficient in characterizing damages in the presence of varying axial loading.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.190-193
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• 2003

Sm-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on the Pt(111)/Ti/$SiO_2$/Si(100) substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Sm content. Sm-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Sm content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Sm content. At 100 kHz, the dielectric constant and the dielectric loss of. the 0.3 mol% of Sm-doped PZT thin film were 1200 and 0.12 respectively. The remanent polarization (2Pr) of the 0.3 mol% of Sm-doped PZT thin film was $52.13{\mu}C/cm^2$ and the coercive field was 94.01 kV/cm. The 0.3 mol% of Sm-doped PZT thin film showed an improved fatigue characteristic comparing to the undoped PZT thin film.

• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.904-911
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• 2001

High-density lead zirconate titanate(Pb(Zr$\_$0.53/Ti$\_$0.47/)O$_3$, PZT) ceramics were fabricated by a new milling-precipitation(MP) process improved from the conventional solid state process. This process was progressed by a milling impregnation through mixing ZrO$_2$ and TiO$_2$ powders with lead nitrate(Pb(NO$_3$)$_2$) water solution in zirconia ball media, and then milling precipitation was induced from precipitation of PbC$_2$O$_4$ by adding ammonium of oxalate monohydrate((NH$_4$)$_2$C$_2$O$_4$$.$H$_2$O) as a precipitant. As a result of this process, single-phase perovskite structure was formed at the calcination temperature of 750$\^{C}$ for Pb(Zr$\_$0.53/Ti$\_$0.47/)O$_3$ powders. In addition, the highest density at the sintering temperature of 1100$\^{C}$ was obtained, because of the highly sinterable PZT Powders ground through the re-milling process. Piezoelectric and dielectric properties of sintered sample were improved by MP process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.51-54
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• 2003

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.66-66
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• 2007

Lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for ferroelectric random access memory (FRAM) due to its higher remanant polarization and the ability to withstand higher coercive fields. We first applied the damascene process using chemical mechanical polishing (CMP) to fabricate the PZT thin film capacitor to solve the problems of plasma etching including low etching profile and ion charging. The $0.8{\times}0.8\;{\mu}m$ square patterns of silicon dioxide on Pt/Ti/$SiO_2$/Si substrate were coated by sol-gel method with the precursor solution of PZT. Damascene process by CMP was performed to pattern the PZT thin film with the vertical sidewall and no plasma damage. The polarization-voltage (P-V) characteristics of PZT capacitors and the current-voltage characteristics (I-V) were examined by change of process parameters. To examine the CMP induced damage to PZT capacitor, the domain structure of the polished PZT thin film was also investigated by piezoresponse force microscopy (PFM).

• 비파괴검사학회지
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• 제27권6호
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• pp.501-508
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• 2007

This paper presents the feasibility of using electromechanical impedance based active sensing technique for nondestructive strength gain monitoring of early-age concrete by employing piezoelectric lead-zirconate-titanate (PZT) patches on concrete surface. The strength development of early age concrete is actively monitored by performing a series of experiments on concrete specimens under moist curing condition. The electrical admittance signatures are acquired for five different curing ages and compared with each other. The resonant frequency shifts of PZT patches with increasing days is observed which is on account of additional stiffening due to strength gain of concrete during curing and level of stiffening being related to strength obtained from compression tests on companion cylinder specimens. The proposed approach is found to be suitable for monitoring the development of compressive strength in early-age concrete. It is also observed in this study that root mean square deviation (RMSD) in admittance signatures of the PZT patches can also be used as an indicator of concrete strength development.

• 한국해양공학회지
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• 제27권6호
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• pp.95-99
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• 2013

Lead zirconate titanate (PZT) thick films with a thickness of $10-20{\mu}m$ were fabricated on silicone substrates using an aerosol deposition method. The starting powder, which had diameters of $1-2{\mu}m$, was observed using SEM. The average diameter ($d_{50}$) was $1.1{\mu}m$. An XRD analysis showed a typical perovskite structure, a mixture of the tetragonal phase and rhombohedral phase. The as-deposited film with nano-sized grains had a fairly dense microstructure without any cracks. The deposited film showed a mixture of an amorphous phase and a very fine crystalline phase by diffraction pattern analysis using TEM. The as-deposited films on silicon were annealed at a temperature of $700^{\circ}C$. A 20-${\mu}m$ thick PZT film was torn out as a result of the high compressive stress between the PZT film and substrate.

• Bulletin of the Korean Chemical Society
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• 제18권1호
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• pp.56-61
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• 1997

Lead zirconate titanate (PZT) thin fills were deposited onto the Pt/Ti/SiO2/Si substrate by the pulsed laser deposition with the second harmonic wavelength (532 nm) of Nd:YAG laser. In order to determine the optimum conditions for the film deposition, the phase of the films were investigated as functions of ambient oxygen pressure, substrate temperature, and laser fluence. Also the chemical composition analysis was conducted for the PZT films deposited under various ambient oxygen pressure. When the distance between substrate and bulk PZT target is set to 20 mm, the optimum conditions have been determined to be 3 torr of oxygen pressure, 1.5 J/cm2 of laser fluence, and 823-848(±10) K range of substrate temperature. At these conditions, perovskite phase PZT films were obtained on platinized silicon. The chemical composition of the films is very similar to that of PZT bulk target. The physical structure of the deposited films analyzed by scanning electron microscopy shows a columnar morphology perpendicular to the substrate surface. Capacitance-Voltage hysteresis loop measurements show also a typical characteristics of ferroelectric thin film. The dielectric constant is found to be 528 for the 0.48 μm thickness of PZT thin film.

• Structural Monitoring and Maintenance
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• 제2권2호
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• pp.165-180
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• 2015

In this paper lead zirconate titanate transducers (PZT) are employed for damage detection of four reinforced concrete (RC) column specimens retrofitted with carbon fiber reinforced polymer (CFRP) jackets. A major disadvantage of FRP jacketing in RC members is the inability to inspect visually if the concrete substrate is damaged and in such case to estimate the extent of damage. The parameter measured during uniaxial compression tests at random times for known strain values is the real part of the complex number of the Electromechanical Admittance (Conductance) of the sensors, obtained by a PXI platform. The transducers are placed in specific positions along the height of the columns for detecting the damage in different positions and carrying out conclusions for the variation of the Conductance in relation to the position the failure occurred. The quantification of the damage at the concrete substrate is achieved with the use of the root-mean-square-deviation (RMSD) index, which is evaluated for the corresponding strain values. The experimental results provide evidence that PZT transducers are sensitive to damage detection from an early stage of the experiment and that the use of PZT sensors for monitoring and detecting the damage of FRP-retrofitted reinforced concrete members, by using the Electromechanical Admittance (EMA) approach, can be a highly promising method.