• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.54-54
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• 2010

Zinc oxide is metal oxide semiconductor with the 3.37 eV bandgap energy. Zinc oxide is very attractive materials for many application fields. Zinc Oxide has many advantages such as high conductivity and good transmittance in visible region. Also it is cheaper than other semiconductor materials such as indium tin oxide (ITO). Therefore, ZnO is alternative material for ITO. ZnO is attracting attention for its application to transparent conductive oxide (TCO) films, surface acoustic wave (SAW), films bulk acoustic resonator (FBAR), piezoelectric materials, gas-sensing, solar cells and photocatalyst. In this study, we synthesized ZnO nanoparticles and defined their physical and chemical properties. Also we studied about the application of ZnO nanoparticles as a photocatalyst and try to find a enhancement photocatalytic activity of ZnO nanorticles.. We synthesized ZnO nanoparticles using spray-pyrolysis method and defined the physical and optical properties of ZnO nanoparticles in experiment I. When the ZnO are exposed to UV light, reduction and oxidation(REDOX) reaction will occur on the ZnO surface and generate ${O_2}^-$ and OH radicals. These powerful oxidizing agents are proven to be effective in decomposition of the harmful organic materials and convert them into $CO_2$ and $H_2O$. Therefore, we investigated that the photocatalytic activity was increased through the surface modification of synthesized ZnO nanoparticles. In experiment II, we studied on the stability of ZnO nanoparticles in water. It is well known that ZnO is unstable in water in comparison with $TiO_2$. $Zn(OH)_2$ was formed at the ZnO surface and ZnO become inactive as a photocatalyst when ZnO is present in the solution. Therefore, we prepared synthesized ZnO nanoparticles that were immersed in the water and dried in the oven. After that, we measured photocatalytic activities of prepared samples and find the cause of their photocatalytic activity changes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.193-196
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• 1999

Organic electroluminescent devices have attracted a great deal of attention due to thier potential application to full-color flat-panel displays. The 8-hydroxyquinollne Zinc(Znq$_2$) were synthesized successfully from zinc chloride(ZnCl$_2$) and zinc acetate(Zn(C$_2$H$_3$O$_3$)$_2$) as green omitting material. A double-layer ELD consist of an emitting layer of B-hydroxyquinoline Zinc(Znq$_2$) and a hole-transport layer of tai-phenylene diamine(TPD) derivatives sandwiched between an Aluminium(Al) and Indium-Tin-Oxide(ITO) electrodes omitted green light resulting from Znq$_2$. The electroluminescent devices (ELD) exhibited a maximum luminance of 1000cd/$\textrm{cm}^2$ at a driving voltage of 8V and a driving current density of 0.4mA/$\textrm{cm}^2$.

• New & Renewable Energy
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• v.17 no.1
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• pp.1-6
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• 2021

Transparent conducting oxide (TCO) films have been widely used in optoelectronic devices, such as OLEDs, TFTs, and solar cells. However, thin films of indium tin oxide (ITO) have few disadvantages pertaining to process parameters such as substrate temperature and sputtering power. In this study, we investigated the requirements for using TCO films in silicon-based solar cells and the best alternative TCO materials to improve their efficiency. Moreover, we discussed the current status of high-efficiency solar cells using low-temperature TCO films such as indium zinc oxide and Zr-doped indium oxide.

• Journal of the Korean Electrochemical Society
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• v.18 no.4
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• pp.161-171
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• 2015

High-yield zinc germanium oxide ($Zn_2GeO_4$) and zinc tin oxide ($Zn_2SnO_4$) nanowires were synthesized using a hydrothermal method. We investigated the electrochemical properties of these $Zn_2GeO_4$ and $Zn_2SnO_4$ nanowires as anode materials of lithium ion battery and sodium ion battery. The $Zn_2GeO_4$ and $Zn_2SnO_4$ nanowires showed excellent cycling performance of the lithium ion battery, with a maximum capacity of 1021 mAh/g and 692 mAh/g after 50 cycles, respectively, with a high Coulomb efficiency of 98 %. For the first time, we examined the cycling performance of $Zn_2GeO_4$ and $Zn_2SnO_4$ nanowires for sodium ion batteries. The maximum capacity is 168 mAh/g and 200 mAh/g after 50 cycles, respectively, with a high Coulomb efficiency of 97%. These nanowires are expected as promising electrode materials for the development of high-performance lithium ion batteries as well as sodium ion batteries.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.235-235
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• 2011

ZnO 나노구조체를 성장하는 여러 가지 방법 중에서 전기 화학 증착법은 컨트롤이 용이하며 저렴한 가격으로 낮은 온도에서 성장이 가능할 뿐만 아니라 대면적으로 성장할 수 있는 장점이 있다. 나노구조체의 직경과 길이는 indium-tin-oxide와 Ag/AgCl 전극 사이의 전류 밀도 증가에 따라 변화하는 것을 알 수 있었다. Zinc nitrate 몰 농도를 조절하여 다양한 형태의 ZnO 나노구조체를 만들 수 있었다. 70$^{\circ}C$에서 4시간 동안 성장한 ZnO 나노구조체를 대기에서 400$^{\circ}C$로 2분 동안 열처리를 하였다. 성장된 ZnO 나노구조체에 대한 X-선 회절 측정 결과로부터 (0002) 피크가 34.35$^{\circ}$에서 나타나는 것을 확인하였다. 주사전자현미경 측정 결과로부터 zinc nitrate의 몰 농도가 낮을 때 성장한 ZnO 나노구조체는 와이어 형태로 형성되었음을 확인하였다. 그러나 zinc nitrate의 몰 농도가 높아지게 되면 ZnO 나노구조체의 모양이 와이어에서 막대 또는 접시 형태로 변화 되는 것을 알 수 있었다. 300K에서의 광루미네센스 스펙트럼 결과로부터 zinc nitrate의 농도에 따라 다르게 형성된 ZnO 나노구조체는 엑시톤과 관련된 피크가 zinc nitrate의 몰 농도 변화에 따라 달라지는 것을 확인 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.324-324
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• 2012

투명전도체(Transparent Conducting Oxides: TCOs)는 일반적으로 면저항이 $103{\Omega}/sq$ 이하로 전기가 잘 통하며, 가시광선영역인 380~780 nm에서의 투과율이 80% 이상이고, 3.2eV 이상의 밴드갭을 가지는 재료로써, 전기전도도와 가시광선영역에서 투과성이 높아 전기적, 광학적 재료로 관심을 받아 다년간 연구대상이 되어오고 있다. 현재 가장 널리 사용되고 있는 투명전도체(Transparent Conducting Oxides: TCOs) 소재로는 Indium Tin Oxide (ITO)가 가장 각광받고 있지만, Indium의 가격상승과 박막의 열처리를 통해 저항이 증가하는 단점을 가지고 있어 이를 대체 할 새로운 소재 개발이 필요한 상황이다. 그러므로 투명전도체 소재 개발에 있어서 가장 중요한 연구과제는 Indium Tin Oxide(ITO)의 단점을 개선시키고 안정된 고농도의 In-Zn-Sn-O(ITZO) 박막을 성장시키는 것이다. 본 연구에서는 RF스퍼터링법에 의하여 Si wafer에 In-Zn-Sn-O(IZTO)를 $350{\AA}$ 만큼 증착시키고, 1시간 동안 $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$로 각각 열처리 하였다. 박막의 전자적, 광학적 특성은 XPS(X-ray Photoelectron Spectroscopy), REELS(Reflection Electron Energy Loss Spectroscopy)를 이용하여 연구하였다. XPS측정결과, ITZO박막은 In-O, Sn-O and Zn-O의 결합을 가지고 있고, 박막의 열처리를 통해 $400^{\circ}C$에서 Zn2p의 피크가 가장 크게 나타나는 반면 In3d와 Sn3d는 열처리를 했을 때가 Room Temperature에서 보다 피크가 작아지는 것을 확인하였다. 이는 $400^{\circ}C$에서 Zn가 표면에 편석됨을 나타낸다. 그리고 REELS를 이용해 Ep=1500 eV에서의 밴드갭을 얻어보면, 밴드갭은 $3.25{\pm}0.05eV$로 온도에 크게 변화하지 않았다. 또한 QUEELS -Simulation에 의한 광학적 특성 분석 결과, 가시광선영역인 380nm~780nm에서의 투과율이 83%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여주었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1101-1104
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• 2008

We have fabricated the transparent TFTs using new oxide material (AZTO: Al-doped zinc tin oxide) as an active layer. The AZTO TFT showed good performance without post-annealing. The electrical characteristics were improved by the post-annealing up to $300^{\circ}C$. The AZTO TFTs exhibited a mobility of $8{\sim}12\;cm^2/Vs$, a sub-threshold swing of 0.2~0.6 V/dec, and an on/off ratio of more than $10^9$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.351-354
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• 2013

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.401-405
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• 2017

Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a $1-{\mu}m$-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.60.1-60.1
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• 2011

비정질 indium-gallium-zinc-oxide (a-IGZO)는 thin film transistor (TFT)에 적용되는 대표적인 active layer로써 높은 이동도를 갖고, 도핑 농도의 제어가 용이하며 낮은 온도에서도 대면적에 증착할 수 있는 특성을 가지고 있다. 특히 저온에서 대면적 증착이 가능한 장점을 갖고 있어 LCD 분야뿐만 아니라 다양한 분야에서 상용화하려는 연구가 시도되고 있다. a-IGZO를 구성하는 물질 중에 이동도에 중요한 역할을 미치는 In은 대표적인 투명전극물질인 indium-tin oxide (ITO)에서 고전류 구동에 의한 확산이 널리 알려져 이에 대한 증명과 개선을 위한 연구가 진행되고 있다. 보고된 결과에 따르면 device에 지속적인 구동 전압을 가했을 때 In이 유기층로 확산되어 organic light emitting diode(OLED)의 성능을 저하시키는 것으로 알려져 있다. 따라서, a-IGZO에서도 고전류 구동에 의한 indium의 이동이 필수불가결하다고 판단된다. 본 연구에서는 a-IGZO TFT에 고전압 구동을 반복적으로 시행함으로써 발생하는 전기적 특성의 변화를 확인하였고, 동일한 소자의 전극과 채널 사이의 계면에서 In 분포를 energy dispersive spectrometer (EDS)로 관찰하여 In 분포와 전기적 특성 간의 상관관계에 대해 연구하였다.