• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.19-22
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• 2008

Thin film has been an increasing important subject of intensive research, owing to the fact that these films possess desirable optical, electrical and electrochemical properties for uses in many semi-conducting nano-crystal applications, such as light-emitting diodes, lasers and solar cell applications. Here, ZnSe thin films were deposited by electrochemical method for the applications of light emitting diode. Electrochemical deposition of ZnSe thin film is not easy, because of the high difference of reduction potential between zinc ion and selenium acid. In order to handle the band gap of ZnSe crystal thin films easily, electrochemical methods are promising to manufacture these films economically. Therefore we have investigated the present study to characterize zinc selenide thin films deposited on ITO glass plates electrochemically. The luminescent properties of ZnSe films have been evaluated by UV-Vis spectrometer and luminescence spectrometer. And the morphology of the film surface has been discussed qualitatively from SEM images.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.319-320
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• 2007

We researched basic study about electrical characteristics of Zinc Selenide (Faraday Cell), which is known for various temperature of good-performance, that applied measuring current or protecting instrument by Optical Current Transducer, on Gas Insulated Switchgear. Measuring System consists of VCSEL produced 850nm IR Laser, Pin Photo Diode made of GaAs surveyed as Optical Power Meter, and Optical Fibers specified Multi-mode. We observed optical output changes during measurement of currents increasing by 100[A] in range from 0[A] to 1,000[A] and set temperature condition increasing by $5[^{\circ}C]$ in a range from $30[^{\circ}C]\;to\;60[^{\circ}C]$.

• Journal of Powder Materials
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• v.28 no.1
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• pp.44-50
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• 2021

Zinc selenide (ZnSe) nanoparticles were synthesized in aqueous solution using glutathione (GSH) as a ligand. The influence of the ligand content, reaction temperature, and hydroxyl ion concentration (pH) on the fabrication of the ZnSe particles was investigated. The optical properties of the synthesized ZnSe particles were characterized using various analytical techniques. The nanoparticles absorbed UV-vis light in the range of 350-400 nm, which is shorter than the absorption wavelength of bulk ZnSe particles (460 nm). The lowest ligand concentration for achieving good light absorption and emission properties was 0.6 mmol. The reaction temperature had an impact on the emission properties; photoluminescence spectroscopic analysis showed that the photo-discharge characteristics were greatly enhanced at high temperatures. These discharge characteristics were also affected by the hydroxyl ion concentration in solution; at pH 13, sound emission characteristics were observed, even at a low temperature of 25℃. The manufactured nanoparticles showed excellent light absorption and emission properties, suggesting the possibility of fabricating ZnSe QDs in aqueous solutions at low temperatures.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.400-400
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• 2009

Despite the success of Cu(In,Ga)$Se_2$ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. One candidate to replace CIGS is $Cu_2ZnSnSe_4$ (CZTSe), fabricated by co-evaporation technique. Co-evaporation technique will be one of the best methods to control film composition. This type of absorber derives from the $CuInSe^2$ chalcopyrite structure by substituting half of the indium atoms with zinc and other half with tin. Energy bandgap of this material has been reported to range from 0.8eV for selenide to 1.5eV for the sulfide and large coefficient in the order of $10^{14}cm^{-1}$, which means large possibility of commercial production of the most suitable absorber by using the CZTSe film. In this work, Effects of substrate temperature of $Cu_2ZnSnSe_4$ absorber layer on the performance of thin films solar cells were investigated. We reported on some of the absorber properties and device results.

• Korean Journal of Optics and Photonics
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• v.28 no.4
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• pp.153-157
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• 2017

An infrared camera and laser common-path optical system is applied to DIRCM (directional infrared countermeasures), to increase boresighting accuracy and decrease weight. Thermal effects of a laser beam in a common-path optical system are analyzed and evaluated, to predict any degradation in image quality. A laser beam with high energy density is absorbed by and heats the optical components, and then the surface temperature of the optical components increases. The heated optical components of the common-path optical system decrease system transmittance, which can degrade image quality. For analysis, the assumed simulation condition is that the laser is incident for 10 seconds on the mirror (aluminum, silica glass, silicon) and lens (sapphire, zinc selenide, silicon, germanium) materials, and the surface temperature distribution of each material is calculated. The wavelength of the laser beam is $4{\mu}m$ and its output power is 3 W. According to the results of the calculations, the surface temperature of silica glass for the mirror material and sapphire for the lens material is higher than for other materials; the main reason for the temperature increase is the absorption coefficient and thermal conductivity of the material. Consequently, materials for the optical components with high thermal conductivity and low absorption coefficient can reduce the image-quality degradation due to laser-beam thermal effects in an infrared camera and laser common-path optical system.