• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.141-142
• /
• 2006

Thermoelectric properties and microstructures of $Sr_{8-x}Ba_xGA_{16}Ge_{30}$ alloys fabricated by the arc-melting method were investigated. The alloys with the nominal composition of $Sr_8Ga_{16}Ge_{30}$ and $Ba_8Ga_{16}Ge_{30}$ were the single-phase alloys, while those of $Sr_4Ba_4Ga_{16}Ge_{30}$ and $Sr_2Ba_6Ga_{16}Ge_{30}$ were two-phases alloys. Electrical resistivity and the Seebeck coefficient for both two-phases alloys were higher in magnitude than those of the single-phase alloys between room temperature and 873K The thermal conductivities for both two-phase alloys were reduced with respect to those of the single-phase alloys in the whole temperature range. The maximum values of ZT for $Sr_4Ba_4Ga_{16}Ge_{30}$ and $Sr_2Ba_6Ga_{16}Ge_{30}$ were achieved with the values of 0.69 at 753K and 0.51 at 754K, respectively, while those of $Sr_8Ga_{16}Ge_{30}$ and $Ba_8Ga_{16}Ge_{30}$ were 0.86 at 758K and 0.76 at 943K, respectively.

• 제어로봇시스템학회:학술대회논문집
• /
• 2005.06a
• /
• pp.139-144
• /
• 2005

A rigorous research is underway in our team, for the design and development of high figure of merits (ZT= 1.5${\sim}$2.0) micro-thermoelectric coolers. This paper discusses the fabrication process that we are using for developing the $Sb_2Te_3-Bi_2Te_3$ micro-thermoelectric cooling modules. It describes how to obtain the mechanical properties of the thin film TEC elements and reports the results of an equation-based multiphysics modeling of the micro-TEC modules. In this study the thermoelectric thin films were deposited on Si substrates using co-sputtering method. The physical mechanical properties of the prepared films were measured by nanoindentation testing method while the thermal and electrical properties required for modeling were obtained from existing literature. A finite element model was developed using an equation-based multiphysics modeling by the commercial finite element code FEMLAB. The model was solved for different operating conditions. The temperature and the stress distributions in the P and N elements of the TEC as well as in the metal connector were obtained. The temperature distributions of the system obtained from simulation results showed good agreement with the analytical results existing in literature. In addition, it was found that the maximum stress in the system occurs at the bonding part of the TEC i.e. between the metal connectors and TE elements of the module.

• Journal of Dental Rehabilitation and Applied Science
• /
• v.21 no.1
• /
• pp.69-81
• /
• 2005

The objective of this study was to evaluate the toothbrush abrasion characteristics of class V restorations. Thirty extracted human premolars, which were collected from oral surgery clinics were used. We mounted five teeth in a metal ring mold of 50 mm in diameter and 15 mm in height using chemically cured acrylic resin. Class V cavities were prepared in lingual cervical root surfaces and restored using one of following restorative materials : Dentin Conditioner/Fuji II LC (Group FL), All Bond II/Z-250 (Group ZT), One-up Bond F/Palfigue Estelite (Group PE), F2000 Primer/Adhesive (Group FT), and Prime & Bond 2.1/Dyract AP (Group DR). They were stored under distilled water at $37^{\circ}C$ for seven days. The toothbrush abrasion test was conducted using a wear testing machine of pin-on disk type under a load of 1.5 N for 100,000 cycles. We have examined the bonded interfaces, the changes of surface roughness and color of abraded surfaces. From this experiment, the following results were obtained. 1. The change of surface roughness showed high degree: RMGIC>compomer>composite resin (p<0.05). 2. Because of the protrusion and missing of filler particles, SEM observation of abraded surfaces of RMGIC and compomers revealed the increase of surface roughness due to the selective removal of matrix resin. 3. The color change by toothbrush abrasion was affected in large part by the change of $L^*$ and $b^*$ of resin composites (p<0.05). 4. The color change by toothbrush abrasion was so small to detect by human eyes. 5. SEM observation of abraded surfaces revealed the interface bonding was the best in the FT group.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.450.2-450.2
• /
• 2014

열전재료는 열-전기가 상호 가역적으로 변하는 재료로서, 최근 에너지 변환소재 분야에서 각광받고 있다. 열전재료의 특성 효율은 무차원 열전 성능지수(dimensionless figure of merit, $ZT={\alpha}2{\sigma}T/{\kappa}$)로 나타낼 수 있다. 여기서 ${\alpha}$는 제벡계수(Seebeck coefficient), ${\sigma}$는 전기전도도(electrical conductivity), ${\kappa}$는 열전도도(thermal conductivity), T는 Kelvin 온도를 나타낸다. 500 K에서 800 K까지의 중온 영역에서 우수한 열전특성을 보이는 $Mg_2X$ (X=Si, Ge, Sn)와 이들의 고용체는 성분원소가 독성이 없고, 매장량이 많아 친환경 열전 재료로 각광받고 있다. $Mg_2X$ 고용체 중 $Mg_2Si_{1-x}Ge_x$는 기존 $Mn_2Si$, $Mg_2Ge$, $Mg_2Sn$계 보다 더 우수한 열전 성능지수를 보인다. 다양한 제조 방법들이 시도되고 있으나, 조성설계 및 구조, 성능 조절의 어려움이 있고, Mg의 산화와 휘발 및 Mg, Si, Ge의 융점 차이가 크고 중력 편석과 반응하지 않은 원소들로 인해 제조가 상당히 어렵다. Sb가 도핑된 $Mg_2Si_{0.5}Ge_{0.5}Sb_y$ (y=0, 0.005, 0.01, 0.02, 0.03) 고용체를 고상반응으로 합성하고 진공열간 압축성형을 통해 성공적으로 제조하였다. 고용 상을 확인하기 위하여 X선 회절분석을 실시하였고, 고용체 형성과 도핑에 따른 전기적 특성변화를 평가하기 위해 Hall 효과를 측정하여 전자 이동특성을 분석하였고, 323~823 K까지 전기전도도, 제벡계수, 열전도도의 측정을 통해 열전 성능지수를 평가하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.304.2-304.2
• /
• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2017.05a
• /
• pp.129-129
• /
• 2017

열전재료는 열에너지를 전기에너지로 또는 전기에너지를 열에너지로 직접 변환하는데 가장 널리 사용되는 재료이다. $Bi_2Te_3$계 열전 재료는 400K 이하의 비교적 저온 영역에서 높은 성능지수(Dimensionless Figure of merit, ZT($={\alpha}2{\sigma}T/{\kappa}$, ${\alpha}$: 제백계수, ${\sigma}$: 전기전도도, T: 절대온도, ${\kappa}$: 열전도도))를 나타내는 열전재료이며 자동차 시트나 정수기 등에 응용되고 있다. 열전모듈은 제조시 수십 개에서 수백 개 이상의 n형 및 p형 열전소자를 알루미나($Al_2O_3$)와 같은 세라믹 기판(substrate) 상에 접합된 동 전극 위에 전기적으로 서로 직렬로 접합시켜 제조한다. 기존의 열전모듈의 제조방법에는 동 전극 위에 위에 Sn합금 분말과 플럭스(flux)의 혼합물인 솔더페이스트를 스크린 인쇄법을 사용하여 동 전극에 도포한 다음, 그 위에 열전소자를 얹고 약 520K의 열풍을 가하여 솔더를 용융시켜 열전소자와 동 전극을 접합시킨다. 스크린 인쇄법에서는 인쇄 압력이 일정하지 않으면, 솔더페이스트 층의 두께가 균일하지 않게 되어 열전소자 접합부의 불량을 유발시킨다. 그러나 열모듈은 단 하나의 접합 불량이 모듈 전체의 열전변환성능에 심각한 영향을 줄 수 있기 때문에 본 연구에서는 이러한 문제점을 해결하기 위해, 솔더페이스트를 도포하지 않고 열전소자를 직접 동 전극과 접합할 수 있는 방법을 고안하였다. 무전해도금을 이용한 니켈층을 형성시킨 $Bi_2Te_3$계 열전소자 표면에 약 $50{\mu}m$의 주석도금층을 전기도금법을 구사하여 형성시켰다. 그 후, wire cutting을 통하여 $3mm{\times}3mm{\times}3mm$의 크기로 절단한 주석도금된 열전소자를 동 전극에 얹고 1.1KPa의 압력을 가하면서 523K의 핫플레이트 위에서 3분간 방치하여 직접(direct) 열압착 접합을 실시하였다. 접합부의 단면을 SEM을 이용하여 관찰한 결과, 동 전극과 열전소자 사이의 계면에 용융 후 응고된 주석층이 결함없이 균일하게 형성된 양호한 접합부를 관찰할 수 있었다. 따라서, 솔더페이스트를 이용하지 않고, 열전소자 표면에 주석도금을 실시한 후, 동 전극과 직접 열압착 본딩을 실시하는 방법은 균일한 접합계면을 얻을 수 있는 새로운 공정으로 기대된다.

• Journal of Powder Materials
• /
• v.23 no.4
• /
• pp.263-269
• /
• 2016

Graphene oxide (GO) powder processed by Hummer's method is mixed with p-type $Bi_2Te_3$ based thermoelectric materials by a high-energy ball milling process. The synthesized GO-dispersed p-type $Bi_2Te_3$ composite powder has a composition of $Bi_{0.5}Sb_{1.5}Te_3$ (BSbT), and the powder is consolidated into composites with different contents of GO powder by using the spark plasma sintering (SPS) process. It is found that the addition of GO powder significantly decreases the thermal conductivity of the pure BSbT material through active phonon scattering at the newly formed interfaces. In addition, the electrical properties of the GO/BSbT composites are degraded by the addition of GO powder except in the case of the 0.1 wt% GO/BSbT composite. It is found that defects on the surface of GO powder hinder the electrical transport properties. As a result, the maximum thermoelectric performance (ZT value of 0.91) is achieved from the 0.1% GO/BSbT composite at 398 K. These results indicate that introducing GO powder into thermoelectric materials is a promising method to achieve enhanced thermoelectric performance due to the reduction in thermal conductivity.

• Journal of Powder Materials
• /
• v.24 no.2
• /
• pp.115-121
• /
• 2017

In this work, p-type Bi-Sb-Te alloys powders are prepared using gas atomization, a mass production powder preparation method involving rapid solidification. To study the effect of the sintering temperature on the microstructure and thermoelectric properties, gas-atomized powders are consolidated at different temperatures (623, 703, and 743 K) using spark plasma sintering. The crystal structures of the gas-atomized powders and sintered bulks are identified using an X-ray diffraction technique. Texture analysis by electron backscatter diffraction reveals that the grains are randomly oriented in the entire matrix, and no preferred orientation in any unique direction is observed. The hardness values decrease with increasing sintering temperature owing to a decrease in grain size. The conductivity increases gradually with increasing sintering temperature, whereas the Seebeck coefficient decreases owing to increases in the carrier mobility with grain size. The lowest thermal conductivity is obtained for the bulk sintered at a low temperature (603 K), mainly because of its fine-grained microstructure. A peak ZT of 1.06 is achieved for the sample sintered at 703 K owing to its moderate electrical conductivity and sustainable thermal conductivity.

• Korean Journal of Materials Research
• /
• v.23 no.2
• /
• pp.98-103
• /
• 2013

$Mg_{3-x}Zn_xSb_2$ powders with x = 0-1.2 were fabricated by mechanical alloying in a planetary ball mill with a speed of 350 rpm for 24 hrs and then hot pressed under a pressure of 70 MPa at 773 K for 2 hrs. It was found that there were systematic shifts in the X-ray diffraction peaks of $Mg_3Sb_2$ (x = 0) toward a higher angle with increasing Zn for both the powder and the bulk sample and finally the phase of $Mg_{1.86}Zn_{1.14}Sb_2$ was formed at the Zn content of x = 1.2. The $Mg_{3-x}Zn_xSb_2$ compounds had nano-sized grains of 21-30 nm for the powder and 28-66 nm for the hot pressed specimens. The electrical conductivity of hot pressed $Mg_{3-x}Zn_xSb_2$ increased with increasing Zn content and temperature from 33 $Sm^{-1}$ for x = 0 to 13,026 $Sm^{-1}$ for x = 1.2 at 323 K. The samples for all the compositions from x = 0 to x = 1.2 had positive Seebeck coefficients, which decreased with increasing Zn content and temperature, which resulted from the increased charge carrier concentration. Most of the samples had relatively low thermal conductivities comparable to the high performance thermoelectric materials. The dimensionless figure of merit of $Mg_{3-x}Zn_xSb_2$ was directly proportional to the Zn content except for the compound with Zn = 1.2 at high temperature. The $Mg_{3-x}Zn_xSb_2$ compound with Zn = 0.8 had the largest value of ZT, 0.33 at 723 K.

• Journal of Powder Materials
• /
• v.18 no.5
• /
• pp.437-442
• /
• 2011

The present study focused on the synthesis of Bi-Te-Se-based powder by an oxide-reduction process, and analysis of the thermoelectric properties of the synthesized powder. The phase structure, chemical composition, and morphology of the synthesized powder were analyzed by XRD, EPMA and SEM. The synthesized powder was sintered by spark plasma sintering. The thermoelectric properties of the sintered body were evaluated by measuring its Seebeck coefficient, electrical resistivity, and thermal conductivity. $Bi_2Te_{2.7}Se_{0.3}$ powder was synthesized from a mixture of $Bi_2O_3$, $TeO_2$, and $SeO_2$ powders by mechanical milling, calcination, and reduction. The sintered body of the synthesized powder exhibited n-type thermoelectric characteristics. The thermoelectric properties of the sintered bodies depend on the reduction temperature. The Seebeck coefficient and electrical resistivity of the sintered body were increased with increasing reduction temperature. The sintered body of the $Bi_2Te_{2.7}Se_{0.3}$ powder synthesized at $360^{\circ}C$ showed about 0.5 of the figure of merit (ZT) at room temperature.