• Journal of Soil and Groundwater Environment
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• v.15 no.3
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• pp.27-33
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• 2010

The purpose of this study was in search of native plant species showing metal-resistant property and excessively accumulating heavy metals in metal-contaminated soil or abandoned mines as well as in evaluation of applicability of phytoremediation. In the study area, species showing excessively accumulating heavy metals were a shepherd´s purse, pampas grass, a Korean lettuce, a Hwansam vine, the Korean persicary, a foxtail, a goosefoot, and a water pepper. The first screened plant species in Sambo mine were as shepherd's purse, Korean lettuce and pampas grass Among them the shepherd´s purse can be excluded because it is a seasonal plant and has lower removal capacity for heavy metals. The Korean lettuce was also excluded because of having lower removal capacity for heavy metals. Pampas grass is a highly bionic plant species constantly growing from spring. However it has weak points such as little accumulation capacity for zinc as well as small values of an accumulation factor and a translocation factor. Another problem is regarded as removal of roots after the clean up if pampas grass is applied to a farmland. In Sanyang mine, wormwood and Sorijaengi were considered as adaptable species.

• Textile Coloration and Finishing
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• v.9 no.2
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• pp.41-49
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• 1997

To control free formaldehyde release from fabric finished with N-methylol compounds, resin finished cotton fabric was treated with resorcinol solution, dried and cured. Factors affecting to control formaldehyde release have been investigated. It was shown that the aftertreatment with resorcinol greatly suppressed the free formaldehyde release. Up to concentration of about 5% of resorcinol, the concentration of resorcinol effected on the control of free and evolved formaldehyde. And at high concentration of resorcinol, however, the concentration became rather insensitive to contol formaldehyde release. Addition of some salt catalysts such as ammonium chloride, zinc nitrate, sodium acetate and ammonium acetate, was effective in decreasing formaldehyde release. Considering the effect on the control of formaldehyde and crease recovery, ammonium acetate was concidered to be the best catalyst. It was observed that the optimum curing temperature for the resorcinol treatment was about 15$0^{\circ}C$, and that the curing time did not affected formaldehyde release over three minutes. Although the treatment of resorcinol had a little adverse effect on crease recovery of resin finished fabric, this effect could be negligible.

• Journal of Information Display
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• v.8 no.2
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• pp.15-19
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• 2007

We have studied the effect of host materials on the electrophosphorescence properties by comparing three different host materials such as tris(8-hydroxyquinoline)-aluminum (III) $(Alq_3)$, bis(8-hydroxyquinoline)-zinc (II) $(Znq_2)$, and 4,4'-N,N' dicarbazole-biphenyl (CBP) doped with a red-emissive phosphorescent dye, 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum (II) (PtOEP). The EL spectra show a strong red emission (peak at 650 nm) from the triplet excited state of PtOEP and a very weak emission from an electron transport layer of $Alq_3$ and a hole transport layer of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD). We find that the triplet exciton lifetime and the quantum efficiency decrease in the order of CBP, $Alq_3$, and $Znq_2$ host materials. The results are interpreted as a poor exciton confinement in $Alq_3$, and $Znq_2$ host compared with in CBP. Therefore, it is very important for the triplet-exciton confinement in the emissive layer for obtaining a high efficiency.

• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.12-15
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• 2008

The zinc oxide(ZnO) nanowires were deposited on Si(001) substrates by thermal chemical vapour deposition without any catalysts. SEM data suggested that the grown nanostructures were the well-aligned ZnO single crystals with preferential orientation. Back-gate ZnO nanowire field effect transistors(FET) were successfully fabricated using a photolithography process. The fabricated nanowire FET exhibits good contact between the ZnO nonowire and Au metal electrodes. Based on I-V characteristics it was found out that the ZnO nanowire revealed a characteristic of n-type field effect transistor. The drain current increases with increasing drain voltage, and the slopes of the $I_{ds}-V_{ds}$ curves are dependent on the gate voltage.

• Journal of Institute of Control, Robotics and Systems
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• v.21 no.8
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• pp.718-722
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• 2015

This paper proposes a fractional-order PID (Proportional-Integral-Derivative) control used electromagnetic strip stabilization controller in a continuous galvanizing line. Compared to a conventional PID controller, a fractional-order PID controller has integration-fractional-order and derivation-fractional-order as additional control parameters. Thanks to increased control parameters, more precise controller adjustment is available. In addition, accurate transfer function of a real system generally has a fractional-order form. Therefore, it is more adequate to use a fractional-order PID controller than a conventional PID controller for a real world system. Finite element models of a $1200{\times}2000{\times}0.8mm$ strip, which were extracted using a commercial software ANSYS were used as simulation plants, and Gaussian mixture models were used to find optimized control parameters that can reduce the strip vibrations to the lowest amplitude. Simulation results show that a fractional-order PID controller significantly reduces strip vibration and transient response time than a conventional PID controller.

• Journal of the Korean Ceramic Society
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• v.56 no.5
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• pp.474-482
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• 2019

Chromium-doped zinc ferrite nanoparticles with the general formula Cr_yZnFe_2-yO₄ (y = 0, 0.025, 0.05, 0.075, and 0.1) were synthesized by a surfactant-assisted chemical co-precipitation route using metal nitrate salt precursors. The phase purity and structural parameters were determined by powder X-ray diffraction. The concentration of Cr³⁺ doped into ZnFe₂O₄ (ZF) noticeably affected the crystallite size, which was in the range of 22 nm to 36 nm, and all samples showed a single cubic spinel structure without any secondary phase or impurities. The lattice parameter, X-ray density, and skeletal density increased with an increase in the Cr-doping concentration; on the other hand, a decreasing trend was observed for the particle size and porosity. The influence of Cr³⁺ substitution on ZF magnetic properties were studied under an applied field of 15 kOe. The overall results revealed that the incorporation of a small amount of Cr dopant changed the structural, electrical, and magnetic properties of ZF.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1575-1577
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• 2009

We have investigated the characteristics of transparent indium zinc oxide(IZO)/Ag/IZO multilayer electrode grown on polyethylene terephthalate (PET) substrates using a specially designed roll-to-roll sputtering system for use in flexible device are described. By the continuous R2R sputtering of the bottom IZO, Ag, and top IZO layers at room temperature, we were able to fabricate an IZO-Ag-IZO multilayer electrode with a sheet resistance of 6.15 ${\Omega}$/square, optical transmittance of 87.4 %, and figure of merit value of 42.03 10-3 ${\Omega}$-1. In addition, the IZO-Ag-IZO multilayer electrode exhibited superior flexibility to the RTR sputter grown single ITO electrode, due to the existence a ductile Ag layer between the IZO layers. This indicates that the RTR sputtered IZO-Ag-IZO multilayer is a promising flexible electrode that can substitute for the conventional single ITO electrode grown by bath type sputtering for use in low cost flexible device, due to its low resistance, high transparency, superior flexibility and fast preparation by the R2R process.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.169-173
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• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.

• Economic and Environmental Geology
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• v.5 no.4
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• pp.211-217
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• 1972

The Second Yeon Hwa Mine which belongs to a so called Lead-Zines Belt Area in the central east Korea is located at about 10 km northeast of the Seogpo railway station on Yeongdong Line. The exploitation of the mine started in June, 1969 and furnished the machinary ore dressing plant in November, 1971. The current monthly production of rude ore is 15,000 meteric tons. The results of the study on the lead-zinc-copper deposits of the Second Yeonhwa mine are summerized as follows: (1) main ore deposits of the mine are localized in the Pungchon Limestion formation of Cambrian age, (2) related ingneous rock with ore deposits is granite porphyry, which distributed in NS and $N50^{\circ}W$ trend, (3) ore solution ascended along the $N50^{\circ}W$ trend which represents folding axis and fault plane and mineralized selectively in the limestone formation. (4) high grade ore deposits are localized in concave and convex boundaries of granite porphyry, and hanging walls of shale bed ($P_2S$ shale bed) in Pungchon Limestone formation and (5) skarn minerals are consisted of garnet, hedenbergite, diopside, and sulfide minerals are composed of zincblenede, galena, phyrhotite, pyrite and some amount of chalcopyrite and arsenopyrite.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.6
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• pp.799-803
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• 2018

We demonstrated memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomeric substrate. The dielectric constant for the P(VDF-TrFE) thin film prepared on the elastomeric substrate was calculated to be 10 at a high frequency of 1 MHz. The voltage-dependent capacitance variations showed typical butterfly-shaped hysteresis behaviors owing to the polarization reversal in the film. The carrier mobility and memory on/off ratio of the MTFTs showed $15cm^2V^{-1}s^{-1}$ and $10^6$, respectively. This result indicates that the P(VDF-TrFE) film prepared on the elastomeric substrate exhibits ferroelectric natures. The fabricated MTFTs exhibited sufficiently encouraging device characteristics even on the elastomeric substrate to realize mechanically stretchable nonvolatile memory devices.