• Title/Summary/Keyword: YBCO single crystal

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COMPOSITION OF SUPERCONDUCTING YBCO THIN FILMS WITH RF REACTIVE SPUTTERING CONDITIONS

  • Kim, H.H.;Kim, S.;Shin, S.H.;Park, J.I.;Park, K.J.
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.829-833
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    • 1996
  • Superconducting YBaCuO thin films were deposited on MgO (100) single crystal substrate by rf reactive sputtering method. Sputtering target was prepared by mixing the original powders of $Y_2O_3$, $BaCO_3$, and CuO at $830^{\circ}C$, and its composition was $YBa_2Cu_{3.3}O_x$ adding the excess CuO to compensate for the loss of Cu in the deposition process. The sputtering conditions for a high quality of YBCO thin film were: substrate temperature of 13$0^{\circ}C$; gas pressure of 10 mTorr; gas mixture ($O_2$: Ar =10: 90); distance of 2.5 inch; and rf power density of 4.87 W /$\textrm{cm}^2$. The deposition rate was 2.4~2.6 nm/min. From the RBS results, it was found that Cu and Ba contents in thin films decreased with the increase of substrate temperature. The increase of gas pressure resulted in significant deficiency of Ba elements.

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Growth and characterization of YBa2Cu3O7-$\delta$ thin films using pulsed laser (펄스레이저 증착에 의한 YBa2Cu3O7-$\delta$박막의 성장과 특성분석)

  • Chung, J.K.;Ko, R.K.;Choi, S.J.;Song, K.J.;Park, C.
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2003.02a
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    • pp.117-119
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    • 2003
  • YBa$_2$Cu$_3$O$_{7-{\delta}}$(YBCO) high temperature superconducting thin films were grown on SrTiO$_3$single crystal substrates by pulsed laser deposition(PLD). The texture and lattice parameter of the YBCO films were analysed using the GADDS (general area detector diffraction system) which enables XRD analyses to be done faster and with fewer sample movement than with the XRD system with point detector. The XRD results of the films grown in different deposition conditions are reported together with the SEM microstructure analysis results.ysis results.

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Microwave plasma emission from tunnel-injected nonequilibrium high-Tc superconductors

  • Lee, Kie-Jin
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.9-14
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    • 2000
  • We report on the novel nonequilibrium nlicrowave emission from quasiparticle-injected high-Tc superconductors. The phenomena have been observed for the current-injected YBCO/I/Au or BSCCO/I/Au thin-film tunnel junctions and BSCCO single-crystal intrinsic Josephson mesa junction samples. For the thin-film tunnel junctions, the emitted radiation appears as broadband. For the intrinsic BSCCO mesa samples, the radiation appears as three different modes of emissions depending on the bias point in the hysteretic current-voltage characteristics; Josephson-emission, nonequilibrium broad emission and sharp coherent microwave emission. The results were interpreted by the Josephson plasma excitation model due to quasiparticle injection.

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Characteristics of Double-junction of High-$\textrm{T}_{c}$ Superconducting $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$ Step-edge Junctions (고온 초전도 $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$ 계단형 모서리 접합의 이중접합 특성)

  • Hwang, Jun-Sik;Seong, Geon-Yong;Gang, Gwang-Yong;Yun, Sun-Gil;Lee, Gwang-Ryeol
    • Korean Journal of Materials Research
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    • v.9 no.1
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    • pp.86-91
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    • 1999
  • We have fabricated high-$\textrm{T}_c$ superconducting $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$(YBCO) grain boundary junctions at a step-edge on (001) $\textrm{SrTiO}_3$(STO) substrates. A diamond-like carbon (DLC) film grown by plasma enhanced chemical vapor deposition were used as an ion milling mask to make steps on the STO (100) single crystal and was removed by an oxygen reactive ion etch process. The c-axis oriented YBCO and TO thin films were deposited epitaxially on the STO substrate with a step-edge by pulsed laser deposition. The grain boundary junctions were formed at the top and the bottom of the step. The junctions worked at temperatures above 77 K, and had I\ulcornerR\ulcorner products of 7.5mV at 16K and 0.3 mV at 77K, respectively. The I-V characteristics of these junctions showed the shape of the two noisy resistively shunted junction model.

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A Measurement and Analysis of Thermoluminescence Spectra of LaAlO3 (LaAlO3에 대한 열자극발광 스펙트럼의 광학적 분석)

  • Lee, J.I.;Moon, J.H.;Kim, D.H.
    • Journal of Korean Ophthalmic Optics Society
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    • v.4 no.2
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    • pp.141-146
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    • 1999
  • We measured and analyzed thermoluminescence spectra of $LaAlO_3$, single crystal by 3 dimensional data for temperature, wavelength and luminescence intensity. $LaAlO_3$, has used as the substrates of YBCO(superconductor) or semiconductors. We could determined the energy of recombination center, that is impossible through analysis of glow curve data. We could obtained the energy through analysis of the spectrum data at peak temperature by Franck-Condon model. The total glow curve was deconvoluted to three glow curves by curve fitting method. The activation energies were 0.54eV, 0.91eV and 1.02eV respectively. The energies of recombination centers were determined with 2.04eV and 2.75eV from the analysis of luminescence intensity data for wavelength.

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DFabrication of $GdAlO_3$ Buffer Layers by Sol-Gel Processing (졸-겔법에 의한 $GdAlO_3$ 버퍼층의 제조)

  • Bang, Jae-Cheol
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.7 no.5
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    • pp.801-804
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    • 2006
  • [ $GdAlO_3(GAO)$ ] buffer layer for $YBa_2Cu_3O_{7-{\delta}}(YBCO)$ coated superconductor wire was fabricated by sol-gel processing. Precursor solution was prepared by dissolving 1:1 stoichiometric quantaties of gadolinium nitrate hexahydrate and aluminum nitrate nonahydrate in methanol. The solution was spin-coated on $SrTiO_3(STO)$(100) single crystal substrates and heated at $1000^{\circ}C$ for 2h in wet $N_2-5%\; H_2$, atmosphere. A SEM(scanning electron microscopy) observation of the surface morphology of the GAO layer has shown that it has a faceted morphology indicating epitaxy. It was shown from x-ray diffraction(XRB) that GAO buffer layer was highly c-axis oriented epitaxial thin film with both good out-of-plane($FWHM=0.29^{\circ}$ for the (002) reflection) and in-plane ($FWHM=1.10^{\circ}$ for the {112} reflection) alignment.

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Neutron Irradiation Effect of YBa2Cu3O7-y Superconductor (YBa2Cu3O7-y 초전도 벌크의 중성자 조사 효과)

  • Lee, Sang Heon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.6
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    • pp.438-441
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    • 2021
  • The electrical characteristics of single-crystal composite superconductors produced by a melting process were studied by neutron irradiation. In order to improve the current characteristics of the YBa2Cu3O7-y superconductor, it is necessary to form an effective flux pinning center inside the superconductor. In this study, an increase in flux pinning was attempted through neutron irradiation onto YBa2Cu3O7-y superconductors. The neutron irradiation was performed at 30 MeV for 500 sec, The electrical properties of the superconductors were measured in a magnetic field of 5 Tesla at 50 K using a magnetic properties measurement system (MPMS). After neutron irradiation, the critical current density of the YBa2Cu3O7-y superconductor in a 1 Tesla magnetic field was 1×105 A/cm2. Once neutrons were irradiated at 30 MeV and 10 μA for 500 sec, the critical current density was observed to increase significantly. When neutrons are irradiated to a superconductor, micro-defects are created in the superconductor, and they act as flux pinning centers that hold the magnetic field generated when an electric current flows.

Preparation of a axis oriented $YBa_2Cu_3O_{7-\delta}$ thin films by RF magnetron sputtering (RF 마그네트론 스퍼터링법에 의한 a-축 배향 $YBa_2Cu_3O_{7-\delta}$박막의 제조)

  • Lee, J.J.;Kim, Y.H.;Shin, J.;Lee, K.H.;Choi, S.S.;Hahn, T.S.
    • Korean Journal of Materials Research
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    • v.4 no.4
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    • pp.459-465
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    • 1994
  • A-axis oriened YBCO thin flims were grown on $LaAIO_{3}$ single crystal substrate by off-axis rf magnetron sputtering method. We used two kinds of process to get a-axis oriented fi1ms;one-step process and two-step process. In one-step process, films are grown in single step in which substrate temperature( $T_s$) is in the range of $590^{\circ}C$ to $680^{\circ}C$. On the other hand, in two step process a-axis oriented thin film templates i f about 30nm thickness is deposited at low temperature first, and subsequently films are grown at elevated temperature to the final thickness of about 100nm. In the case of one step process($T_s$ ~)$600^{\circ}C$), prefered a-axis orientation is dominant and Cu-rich phases segregate at the surface. Segregations decrease and ($00 \ell$) peaks increase upon increasing $T_s$. The films prepared by two step method appeared to have strong(h00) peaks as the deposition rate increased. Microstructure shows pin holes resulted from mixed phases of a-axis and c-axis oriented films. In both cases of one step and two step process, as TS decreases, prepared films show stronger a-axis orientation. However electrical properties of the films are depressed with lower $T_c$ and wider $\Delta T$ as $T_s$ decreases.

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