• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.177-179
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• 2002

본 연구는 Ag와 Ce이 함유된 유리를 용융법에 의해 제조하였으며, 355nm Nd:YAG 펄스 레이저를 조사하였을 때의 광학적 특성과 열처리과정에서 발생하는 결정화의 변화과정에 대해 평가하였다. Ce이 함유된 유리는 환원 분위기에서 제조되었으며, Optical Absorption을 통하여 Ce$^{3+}$ 이온이 존재하는 유리의 흡수대역을 관찰하고자 하였다. Photo Luminescence(PL) 측정을 통해 Ce$^{3+}$ 이 존재하고 있음을 확인하였으며, Ce$^{3+}$ 이온의 5d$\longrightarrow$4f 전이를 관찰하였다. 이와같이 Ce$^{3+}$ 가 함유된 유리는 레이저를 조사하였을 경우 PL의 강도가 저하됨을 확인하였다. 열처리과정에서 발생하는 결정화현상을 고찰하기 위해 열분석을 실시하였으며, 레이저조사된 유리에서 최대결정화온도가 감소함을 관찰하였다.

• Corrosion Science and Technology
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• v.9 no.1
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• pp.29-33
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• 2010

Laser machining technique, which is used focusing pulse YAG laser beam irradiation was applied to form area ratio controlled model cut-edge on pre painted Zn coated steels. A corrosion behavior of formed model cut-edge was investigated by rest potential measurement in 1 mol $m^{-3}$ NaCl with and without 0.5 kmol $m^{-3}$ $H_3BO_4$/0.05kmol$m^{-3}$ $Na_2B_4O_7$. The rest potential showed almost constant value with fluctuations. The amplitude of fluctuations increased with exposed area of steel surface. White corrosion products of zinc oxide and simonkollite was formed after the experiments at the formed model cut-edge.

• Nuclear Engineering and Technology
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• v.32 no.6
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• pp.531-536
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• 2000

The extraction of precious metals from aqueous solutions is performed by using a photoredox reaction with a Q-switched Nd:YAG laser. The metallic silver was efficiently precipitated and extracted from the silver nitrate solution by laser photolysis. An optimum reaction condition for silver extraction was determined by adjusting various experimental factors such as type of reducing agent, type of acids and reaction time. The composition of the reaction product was analyzed and it was identified as metallic silver, not other molecular types. The photoreaction of chromium(III) chloride in an acidic aqueous solution was also investigated. The 355 nm laser light was better suited for the reaction of silver nitrate as well as chromium(III) chloride in an acidic solution compared to the 532 nm light.

• Korean Journal of Materials Research
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• v.6 no.6
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• pp.636-643
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• 1996

공진기형 제 2고조파소자(SHG)는 레이저 빔의 에너지 밀도가 높아 고내구성 박막이 필요하다. 본 연구에서는 광학박막 재료로 고융점 산화물인 ZrO2, TiO2, SiO2를 사용하였다. 반응성 스퍼터링 방법으로 제작한 ZrO2, TiO2, SiO2 박막을 XRD, SAM을 사용하여 분석하였고, 박막의 광학적 특성을 평가하였다. SHG 소자의 KTP 및 Nd:YAG 결정의 반사방지막(A/R 코팅)구성은 ZrO2와 SiO2를 사용하여 컴퓨터로 계산하였는데 기본파인 1064nm와 제 2고조파인 532nm에서 각각 0.1%, 0.5%이하의 반사율을 갖도록 하였다. 또한 고반사막(H/R 코팅)의 경우 1064nm에서 99.9%의 반사율을 갖도록 TiO2와 SiO2로 디자인하였다. 제작한 광학박막의 광학적 특성, 레이저 내구성(laser damage threshold), 온습도 안정성 실험 등을 통해 광학박막을 평가하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.828-830
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• 2000

Various substrates were compared for the investigation of the optical properties of ZnO thin films. ZnO thin films have been deposited on (100) p-type silicon substrates and (001) sapphire substrates by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm. Oxygen and nitrogen gases were used as ambient gases. Substrate temperatures were varied in the range of 200$^{\circ}C$ to 600$^{\circ}C$ at a fixed ambient gas pressure of 350 mTorr. ZnO films have been deposited on various substrates, such as Si and sapphire wafers. We have investigated substrate effect on the optical and structural properties of ZnO thin films using X-ray diffraction (XRD) and photoluminescence (PL).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.75-78
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• 2002

Si thin films on p-type (100) Si substrate have been prepared by a pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films with the variation of the annealing temperature.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.799-804
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• 1999

Composites of SiC-Si3N4 consisted of uniformly distributed elongated $\beta$-Si3N4 grains and equiaxed $\beta$-SiC grains were fabricated with $\beta$-SiC,. $\alpha$-Si3N4 Al2O3 and Y2O3 powders. By hot-pressing and subsequent annelaing elongated $\beta$-Si3N4 grains were grown via$\alpha$longrightarrow$\beta$ phase transformation and equiaxed $\beta$-Si3N4 composites increased with increasing the Si3N4 content owing to the reduced defect size and enhanced crack deflection by elongated $\beta$-Si3N4 grains and the grain boundary strengthening by nitrogen incorporation. Typical flexural strength and fracture toughness of SiC-40 wt% Si3N4 composites were 783 MPa and 4.2 MPa.m1/2 respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.539-542
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.236-239
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• 2002

Si nanocrystallites thin films on P-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases ;It the temperature range of 400 to $800^{\circ}C$ Hydrogen passivation was then performed in the forming gas (95 % $N_2$ + 5 % $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. We report the variation of photoluminescence (PL) properties of Si thin films by changing annealing temperatures and by using hydrogen passivation. The results could suggest that the origin of violet-indigo PL should be related to the Quantum size effect of Si nanocrystallite.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.54-57
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266 m. During deposition, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $400^{\circ}C$ and flow rate of 350 sccm, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by diffraction (XRD), SEM and the optical of the ZnO were characterized by photoluminescence (PL).