• 전기화학회지
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• 제6권3호
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• pp.174-177
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• 2003

Electric double-layer capacitors based on charge storage at the interface between a high surface area activated carbon electrode and an electrolyte solution are characterized by their long cycle-life and high power density in comparison with batteries. However, energy density of electric double-layer capacitors obtained at present is about 6 Wh/kg at a power density of 500W/kg which is smaller as compared with that of batteries and limits the wide spread use of the capacitors. Therefore, a new capacitor that shows larger energy density than that of electric double-layer capacitors is proposed. The new capacitor is the hybrid capacitor consisting of activated carbon cathode, carbonaceous anode and an organic electrolyte. Maximum voltage applicable to the cell is over 4.2V that is larger than that of the electric double-layer capacitor. As a result, discharged energy density on the basis of stacked volume of electrode, current collector and separator is more than 18Wh/l at a power density of 500W/l.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.199-202
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• 1998

Power capacitors are highly reliable equipment due to their completely enclosed configuration. Aging diagnosis system using partial discharge(PD) and acoustic emission(AE) is being highlighted as a research area for degradation of power capacitors. Their dielectric strength can be however reduced due to some stresses such as over-voltage or thermal degradation of the insulation material during their long period of operation. In this paper, it has been developed to express the AE of the EVENT(average amplitude) and HIT(pulse count) according to the source location. And real time measurement of PD signals for aging diagnosis of power capacitors.

• Journal of Power Electronics
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• 제8권4호
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• pp.325-331
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• 2008

Power system perturbations are due to many reasons; one of the most common perturbation causes is switching off/on the power capacitors. This paper monitors and discusses the overvoltages which appear on local and remote capacitor connected buses in power systems. Using the Fast Fourier Transfer (FFT), the total harmonic content of voltages and currents waveforms is also estimated at all buses. The power factor during different cases of switching modes "off/on" is monitored. The monitoring technique tackles not only the longitudinal long distance mutual effects of switching power capacitors between different buses but also evaluates the overvoltage durations. A relative long term monitoring is implemented using the Matlab/Simulink environment to show severity assessments in different switching modes on the transformers' voltages and currents' waveforms.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제55권8호
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• pp.403-407
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• 2006

Standard capacitors, as like as Hamon resistor standards, of series connection/parallel connection ratio $10{\mu}F/1000{\mu}F\;and\;100{\mu}F/10000{\mu}F$ were fabricated for calibration of impedance bridges or analyzers with measuring ranges up to 1 F. The calculated correction terms to the ratio of one measured value in series connection to the value in parallel connection were evaluated to be $1.92{\times}10^{-7}$. These capacitors were designed to be used not only as 100:1 capacitance standards but also as single capacitors or decade capacitors with decade values at frequencies up to 1 kHz.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.373-377
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• 2004

We have investigated the electrical characterization of metal-oxide-semiconductor (MOS) capacitors formed on the inductively coupled plasma (ICP) etch-damaged both n- and p-type 4H-SiC. We found that there was an effect of a sacrificial oxidation treatment on the etch-damaged surfaces. Current-voltage and capacitance-voltage measurements of these MOS capacitors were used and referenced to those of prepared control samples without etch damage. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged 4H-SiC since the effective interface density and fixed oxide charges of etch-damaged samples have been found to increase while the breakdown field strength of the oxide decreased and the barrier height at the SiC-SiO$_2$ interface decreased for MOS capacitors on etch-damaged surfaces.

• 전기학회논문지
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• 제60권3호
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• pp.544-551
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• 2011

This paper presents the circuit arrangement and effective control method of regenerative energy storage system for an electric vehicle using super-capacitors as the braking energy storage element. A bi-directional controlled current flow of the DC-DC converters with the capacitor bank is connected in parallel with battery, and is controlled so that the whole of the braking energy is effectively absorbed into the capacitors and released back to the electric motor upon acceleration. The converter needs the series-parallel switching circuit for making the best use of the series capacitors and for limiting the step-up ratio of the boost converter. The proposed methods are verified by computer simulation and experimental set-up. They are usefully applied to the electric vehicles such as green cars, electric motorcycles, bike, etc which are power- supplied by the electric batteries.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2011년도 전력전자학술대회
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• pp.370-371
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• 2011

This paper presents a control algorithm that minimizes the DC-link capacitance by decreasing the capacitor current. The capacitor current can be nullified by a feedback compensation term which is calculated from the power balance in the AC/DC converter. As a result, voltage variation in the DC-link is reduced further, which makes a large reduction in the size of DC-link capacitors which are expensive and have limitations in life time. Simulations are performed with two 80uF DC-link capacitors, which can be replaced by film capacitors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.147-148
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• 2006

Ge nanocrystals(NCs)-embedded MOS capacitors are charactenzed in this work using capacitance-voltage measurement. High-k dielectrics $HfO_2$ are employed for the gate material m the MOS capacitors, and the C-V curves obtained from $O_2-$ and $NH_3$-annealed $HfO_2$ films are analyzed.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.283-288
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• 2004

We have fabricated MIM capacitors for MMIC applications, with capacitances as high as 600pF/$\textrm{mm}^2$ and excellent electrical properties of the insulator layer. Silicon nitride thin film is the desirable material for MMIC capacitor fabrication. Standard MIM capacitance in MMIC is 300pF/$\textrm{mm}^2$ with an insulator layer thickness of more than 2000$\AA$. However, capacitors with thin insulator layers have breakdown voltages as low as 20V. We have deposited insulator layers by PECVD in our MIM structure with an air bridge between the top metal and the contact pad. The PECVD process was optimized for fabricating the desired capacitors to be used in MMIC. Silicon nitride(Si$_{x}$N$_{y}$) thin films of about 1000$\AA$ thick show capacitances of about 600pF/$\textrm{mm}^2$, and breakdown voltages above 70V at 100nA.A.A.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1504-1505
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• 2007

In this paper, fully embedded high Dk BTO MIM capacitors have been developed into a multi-layered organic package substrate for low cost RF SOP (System on Package) applications. These embedded MIM capacitors were designed and simulated by using CST 3D EM simulators for finding out optimal geometries and verifying their applicability. The embedded MIM capacitor with a size of $550\;{\times}\;550\;um^2$ has a capacitance of 5.3pF and quality factor of 43 at 1.5 GHz, respectively. The measured performance characteristics were well matched with 3D EM simulated ones. Equivalent circuit parameters of the embedded capacitors were extracted for making a design library.