• Journal of Korean Vacuum Science & Technology
• /
• v.4 no.3
• /
• pp.73-77
• /
• 2000

Single crystal and polycrystalline Si thin films were doped with phosphorus by a 2-zone diffusion method to develop the low-resistivity polycrystalline Si electrode for a hemispherical grain. Solid phosphorus source was used in order to achieve uniformly and highly doped surface region of polycrystalline Si films having rough surface morphology. In case of 2-zone diffusion method, it is proved that the heavy doping near the surface area can be achieved even at a relatively low temperature. SIMS analysis revealed that phosphorus doping concentration in case of using solid P as a doping source was about 50 times as that of phosphine source at 750$^{\circ}C$. Also, ASR analysis revealed that the carrier concentration was about 50 times as that of phosphine. In order to evaluate the electrical characteristics of doped polycrystalline Si films for semiconductor devices, MOS capacitors were fabricated to measure capacitance of polycrystalline Si films. In ${\pm}$2 V measuring condition, Si films, doped with solid source, have 8% higher $C_{min}$ than that of unadditional doped Si films and 3% higher $C_{min}$ than that of Si films doped with $PH_3$ source. The leakage current of these films was a few fA/${\mu}m^2$. As a result, a 2-zone diffusion method is suggested as an effective method to achieve highly doped polycrystalline Si films even at low temperature.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2000.11a
• /
• pp.61-64
• /
• 2000

We fabricated and characterized Low Noise Amplifier (LNA) using MCM-C (Multi-Chip-Module-Cofired) technology for 2.14 GHz IMT-2000 mobile terminal application. First, We designed LNA circuits and simulated it's high frequency characteristics using circuits simulator. For the simulation, we adopted high frequency libraries of all the devices used in LNA samples. By the simulation, Gain was 17 dB and Noise Figure was 1.4 dB. We used multilayer process of LTCC (Low Temperature Co-fired Ceramics) substrate and conductor, resistor pattern for the MCM-C LNA fabrication. We made 2 buried inductors, 2 buried capacitors and 3 buried resistors. The number of the total layers was 6. On the top layer, we patterned microstrip line and pads for the SMT device. We measured the high frequency characteristics, and the results were 14.7 dB Gain and 1.5 dB Noise Figure.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.1868-1870
• /
• 2000

As a drive for an ETC (Electro-thermal Chemical) launcher, a large pulse power system of a 2.4MJ energy storage was designed, constructed and tested. The overall power system consists of eight capacitive 300kJ energy storage banks. In this paper we describe the design features, setup and operation test result of the 300kJ pulsed power module. Each capacitor bank of the 300kJ module consists of six 22kV 50kJ capacitors. A triggered vacuum switch (TVS-43) was adopted as the main pulse switch. Crowbar diode circuits, variable multi-tap inductors and energy dumping systems are connected to each high power capacitor bank via bus-bars and coaxial cables. A parallel crowbar diode stack is fabricated in coaxial structure with two series 13.5kV, 60kA avalanche diodes. The main design parameters of the 300kJ module are a maximum current of 180kA and a pulse width of 0.5 - 3ms. The electrical performances of each component and current output variations into resistive loads have been investigated.

• Journal of Environmental Health Sciences
• /
• v.26 no.2
• /
• pp.97-107
• /
• 2000

PCBs [Polychlorinated biphenyls] are halogenated aromatic compounds with the empirical formula C12H10-nCln(n=1~10), and are a mixture of possible 209 different chlorinated congeners. PCBs were widely used as dielectric fluids for capacitors, transformers, plasticizers, lubricant inks, and paint additives. once released into the environment, PCBs persist for years because they are so resistant to degradation. In addition to their high degree of lipophilicity. In 1970s, the worldwide production of PCBs seem to be still in use. The environmental load of PCBs was prohibited since 1983 in Korea. In spite of these actions, many PCBs seem to be still in use. The environmental load of PCBs will continue to be recycled through air, land, water, and the biosphere for decades to come. This study was conducted to measure the concentrations of PCBs I the serum samples of 112 women by GC/MSD(Hewlett Packard 5897 Gas Chromatography-Mass Chromatography Detector) and CG/ECD(Hewlett Packard 5890 series-II gas chromatography-Electron capture detector, U.S.A). The main results of this study were as follows; The mean and standard deviation of serum PCBs were 3.613, 0.759 ppb, respectively and median of it was 3.828 ppb. The correlation coefficients of the concentrations of 13 PCB congeners ranged from 0.7913 to 0..9985 and were significantly correlated between each items(p=0.0001). The PCB concentrations were positively associated with age(simple linear regression; R2=0.86, =0.08023, p<0.001) and with total lipids in serums(simple linear regression; R=0.7058, =0.00486, p<0.001). The age adjusted model (Y=$\beta$0+$\beta$1age+$\beta$2X) was applied for possible predictors of PCBs levels in serum. For BMI(Body Mass Index), major residential area, and fish, meat, and dairy consumption, there was no association with PCBs levels, Also there was negative association for the number of pregnancy and lactation period with PCBs levels.

• Journal of Powder Materials
• /
• v.12 no.5 s.52
• /
• pp.325-331
• /
• 2005

Implant prototypes with various porosities were fabricated by electro-discharge-sintering of atomized spherical Ti-6Al-4V powders. Single pulse of 0.75 to 2.0 kJ/0.7 g-powder, using 150, 300, and $450{\mu}F$ capacitors was applied to produce a fully porous and porous surfaced implant compact. The solid core formed in the center of the compact after discharge was composed of acicular ${\alpha}+{\beta}$ grains and porous layer consisted of particles connected in three dimensions by necks. The solid core and neck sizes increased with an increase in input energy and capacitance. On the other hand, pore volume decreased with increased capacitance and input energy due to the formation of solid core. Capacitance and input energy are the only controllable discharge parameters even though the heat generated during a discharge is the unique parameter that determines the porosity of compact. It is known that electro-discharge-sintering of spherical Ti-6Al-4V powders can efficiently produce fully-porous and porous surfaced Ti-6Al-4V implants with various porosities in a short time less then 400 isec by manipulating the discharging condition such as input energy and capacitance including powder size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.2
• /
• pp.101-106
• /
• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• The Korean Journal of Ceramics
• /
• v.6 no.2
• /
• pp.138-142
• /
• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.4
• /
• pp.300-306
• /
• 2004

This paper reports a novel tunable bandpass filter using two-state switched inductor with direct-contact MEMS switches for wireless LAN applications. In our filter configuration, the switched inductor is implemented to obtain more stable and much larger frequency tuning ratio compared with variable capacitor-based tunable filter. The proposed tunable filter was fabricated using a micromachining technology and electrical performances of the fabricated filter were measured. The filter consists of spiral inductors, MIM capacitors and direct-contact type MEMS switches, and its frequency tunability is achieved by changing the inductance that is induced by ON/OFF actuations of the MEMS switches. The actuation voltage of the MEMS switches was measured of 58 V, and they showed the insertion loss of 0.1 dB and isolation of 26.3 dB at 2 GHz, respectively. The measured center frequencies of the fabricated filter were 2.55 GHz and 5.1 GHz, respectively. The passband insertion loss and 3-dB bandwidth were 4.2 dB and 22.5 % at 2.55 GHz, and 5.2 dB and 23.5 % at 5.1 GHz, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.28 no.11A
• /
• pp.929-935
• /
• 2003

An analog/digital mixed mode ASIC for network synchronization of ATM switching system has been designed and fabricated. This ASIC generates a 234.7/46.94 ㎒ system clock and 77.76/19.44 ㎒ user clock using 46.94 ㎒ transmitted clocks from other systems. It also includes digital circuits for checking and selecting of the transmitted clocks. For effective ASIC design, full custom technique is used in 2 analog PLL circuits design, and standard cell based technique is used in digital circuit design. Resistors and capacitors for analog circuits are specially designed which can be fabricated in general CMOS technology, so the chip can be implemented in 0.8$\mu\textrm{m}$ digital CMOS technology with no expensive. Testing results show stable 234.7 ㎒ and 19.44 ㎒ clocks generation with each 4㎰ and 17㎰ of low ms jitter.

• Korean Journal of Materials Research
• /
• v.11 no.12
• /
• pp.1080-1085
• /
• 2001

Dielectric properties and leakage current characteristics of 100 nm-thick $Ta_2O_5/Al_2O_3$multilayer thin films, which were fabricated by reactive sputtering of$Al_2O_3$and$Ta_2O_5$ successively on top of each other for total 9 layers, have been investigated with variation of the$Al_2O_3$content$(i.e,\;Ta_2O_5/Al_2O_3 \;thickness\;ratio)$.$Ta_2O_5/Al_2O_3$films were amorphous regardless of the$Al_2O_3$content. With increasing the$Al_2O_3$content from 0% to 100%, refractive index of the $Ta_2O_5/Al_2O_3$films decreased linearly from 2.03 to 1.56 and dielectric constant was lowered from 23.9 to 7.7 Variation of the dielectric constant with the$Al_2O_3$content was in good agreement with the behavior that was obtained by assuming parallel capacitors of$Al_2O_3$and Ta_2O_5$. Leakage current characteristics of $Ta_2O_5/Al_2O_3$ multilayer films were superior to those of $Ta_2O_5$ and$Al_2O_3$films. $Ta_2O_5/Al_2O_3$ films of 5% and 10%$Al_2O_3$content exhibited excellent leakage current densities which were lower than $10^{-7} A/cm^2$ at 1MV/cm.