• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.575-582
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• 2000

The Electrical conduction and optical properties of Ta$_{2}$/O$_{5}$ thin films as the insulators in DRAM capacitors were studied. Liquid Ta/sib 2//O sub 5/ were prepared by a sol-gel processing and multiple layers were applied by spin-coating up to thickness of 800$\AA$. At annealing temperature of 300~$600^{\circ}C$ the electrical conduction and specific dielectric constant were discussed the behaivor of carrier were observed by the Thermally Stimulated Current (TSC) at the temperature range of 30~23$0^{\circ}C$. At annealing temperature of 300~$600^{\circ}C$ the samples were found to be amorphous below $600^{\circ}C$ and crystalline over it. The electrical strength was about 2.2 MV/cm at 40$0^{\circ}C$. In spite of noncrystallization over 50$0^{\circ}C$ the increasing of leakage current due to pinholes and increasing creak. The refractive index was obtained maximum (2.2) at 40$0^{\circ}C$. The dielectric constant was obtained maximum(18.6) at 40$0^{\circ}C$. TSC was observed one peak at the temperature range of 30~23$0^{\circ}C$ from sample at 40$0^{\circ}C$. In the case of collecting voltage the peak size is decreased in proportion to collecting voltage and then the peak may be thought carrier to be a ionic space charge.e.

• Journal of Korea Foundry Society
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• v.25 no.6
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• pp.259-264
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• 2005

The copper clad steel wire is used extensively as lead wires of electronic components such as capacitors, diodes and glass sealing lamp because the wire combines the strength and low thermal expansion characteristic of Fe-Ni steel with the conductivity and corrosion resistance of copper. In order to fabricate the copper clad steel wire, several processes including electro-plating, tubecladding extrusion process and dip forming process have been introduced and applied. The electroplating process for the production of copper clad steel wire shows poor productivity and induces environmental load generation such as electroplating solution. The dip forming process is suitable to mass production of copper clad steel such as trolley wire. and need expensive manufacturing facilities. The present paper describes the improvement of the conventional continuous casting process to fabricate copper clad steel wire, which its core metal is low thermal expansion Fe-Ni alloy and its sheath material is copper. In particular, the formation of intermetallic compound at interface between core and sheath was investigated in order to introduce optimum continuous casting process parameter for fabrication of copper clad steel wire with higher electrical conductivity. The mechanical strength of copper clad steel wire was also investigated through wiredrawing process with of 95% in total reduction ratio.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.15 no.3
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• pp.57-66
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• 2001

This paper resents a control approach for designing a fuzzy-PI controller for a synchronous generator excitation and SVC system A combination of thyristor-controlled reactors and fixed capacitors (TCR-FC) type SVC is recognized as having the must fiexible control and high speed response, which has been widely utilized in power systems, is considered and designed to improve the response of a synchronous generator, as well as controlling the system voltage A Fuzzy-PI controller for SVC system was proposed in this paper. The PI gain parameters of the proposed Fuzzy-PI controller which is a special type of PI ones are self-tuned by fuzzy inference technique. It is natural that the fuzzy inference technique should be barred on humans intuitions and empirical knowledge. Nonetheless, the conventional ones were not so. Therefore, In this paper, the fuzzy inference technique of PI gains using MMGM(Min Max Gravity Method) which is very similar to humans inference procedures, was presented and allied to the SVC system. The system dynamic responses are examined after applying all small disturbance condition.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1267-1271
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• 2009

In this paper, a diplexer circuit to separate GSM from CDMA band is designed using a LTCC (Low Temperature Cofired Ceramic) multi-layer technology. In order to increase a integration capability of the diplexer, it is designed using 3-dimensional (3-D) multi-layer compact inductor and capacitors in e-layer LTCC substrate with a relative dielectric constant of 7. In order to achieve high selectivity of the bands, a shunt capacitor and inductor are designed in the high-pass filter (HPF) and low-pass filter (LPF), respectively. The size of the fabricated diplexer including CPW pads is 3,450 ${\times}$4,000 ${\times}$694 ${\mu}m^3$An insertion loss (IL) and return loss in GSM band are less than -1.35dB and more than -5.66dB,respectively. In the case of CDMA band, the IL of -1.54dBandRLof above -9.30dBare archived.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1348-1354
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• 2015

In this paper, chaotic circuit of the voltage controlled Lorentz system for engineering applications has been designed and implemented in an electronic circuit. The proposed circuit consists of MOS variable resistor, multipliers, capacitors, fixed resistors and operational amplifiers. The circuit was analysed by PSPICE program. PSPICE simulation results show that chaotic dynamics of the circuit can be controlled by the MOS variable resistor through time series analysis, frequency analysis and phase diagrams. Also, we implemented the proposed circuit in an electronic hardware system with discrete elements. Measured results of the circuit showed controllability of the circuit using the MOS resistor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.575-580
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• 2007

A 16 Mb 1T1C FeRAM device was integrated with BLT capacitors. But a lot of cells were failed randomly during the measuring the bit-line signal distribution of each cell. The reason was revealed that the grain size and orientation of the BLT thin film were severely non-uniform. And the grain size and orientation were severely affected by the process conditions of post heat treatment, especially nucleation step. The optimized annealing temperature at the nucleation step was $560^{\circ}C$. The microstructure of the BLT thin film was also varied by the annealing time at the step. The longer process time showed the finer grain size. Therefore, the uniformity of the grain size and orientation could be improved by changing the process conditions of the nucleation step. The FeRAM device without random bit-fail cell was successfully fabricated with the optimized BLT capacitor and the sensing margin in bit-line signal distribution of it was about 340 mV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.470-475
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• 2009

We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.551-555
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• 1999

The deposition condition to obtain stoichiometric $Ta_2$O\ulcorner films, which is still controversial, using magnetron reactive sputtering was studied. The films were deposited by varying $O_2$gas flow rate with sputtering power and Ar gas flow rate of 200W and 60 sccm fixed. At the conditions of $O_2$ gas flow rate over 20 sccm, amorphous Tantalum oxide films with the refractive index of 2.1 and dielectric constant of 25 were deposited. Among those films, the capacitors dielectric properties of the film deposited at the condition of $O_2$ gas flow rate 50 sccm was best, the leakage current was 1$\times$10\ulcornerA/$\textrm{cm}^2$ at the electric field strength of 0.5 MC/cm and the breakdown field strength was over 2.0 MV/cm. This result could be explained from the analysis comparing with a standard sample using RBS because the composition of the film deposited at this condition was closest to the stoichiometric $Ta_2$O\ulcorner. The result of XPS analysis convinced that this film was stoichiometric $Ta_2$O\ulcorner film. A maximum cathode voltage was observed when $O_2$gas flow rate was 30 sccm. This shows that the Schiller's proposition that one can obtain stoichiometric films at the condition of maximum cathode voltage is not correct and more oxygen than that of the maximum voltage condition is necessary to deposit the stoichiometric Ta$_2$O\ulcorner films.

• Journal of Advanced Navigation Technology
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• v.17 no.6
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• pp.720-725
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• 2013

This paper has presented that fringing-electric fields enhanced by a finger-type electrode can improve the tunability of the tunable capacitor. Its top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are analyzed in terms of effective capacitance and tunablility. Their effective capacitance and tunability of the varactors with the long perimeter increase 24~40 % and 7~12 %, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz.

• Journal of Power Electronics
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• v.17 no.4
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• pp.849-859
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• 2017

This paper illustrates the analysis and design of a multi-resonant converter applied to an electric vehicle (EV) charger. Thanks to the notch resonant characteristic, the multi-resonant converter achieve soft switching and operate with a narrowed switching frequency range even with a wide output voltage range. These advantages make it suitable for battery charging applications. With two more resonant elements, the design of the chosen converter is more complex than the conventional LLC resonant converter. However, there is not a distinct design outline for the multi-resonant converters in existing articles. According to the analysis in this paper, the normalized notch frequency $f_{r2n}$ and the second series resonant frequency $f_{r3n}$ are more sensitive to the notch capacitor ratio q than the notch inductor ratio k. Then resonant capacitors should be well-designed before the other resonant elements. The peak gain of the converter depends mainly on the magnetizing inductor ratio $L_n$ and the normalized load Q. And it requires a smaller $L_n$ and Q to provide a sufficient voltage gain $M_{max}$ at ($V_{o\_max}$, $P_{o\_max}$). However, the primary current increases with $(L_nQ)^{-1}$, and results in a low efficiency. Then a detailed design procedure for the multi-resonant converter has been provided. A 3.3kW prototype with an output voltage range of 50V to 500V dc and a peak efficiency of 97.3 % is built to verify the design and effectiveness of the converter.