• 반도체디스플레이기술학회지
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• 제16권1호
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• pp.70-74
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• 2017

To research the electrical properties of ZnS thin films with various annealing conditions, ZnS was prepared by RF magnetron sputtering system and annealed in a vacuum for 10 minutes. All films were analyzed by the XRD, PL and I-V measurement system. The XRD pattern of ZnS film annealed at $100^{\circ}C$ was shifted to lower 2 theta because of the formation of a depletion region at the interface between a substrate and ZnS thin film, and the capacitance was abruptly increased. However, the pattern of XRD of ZnS film annealed at $100^{\circ}C$ with a Schottky contact was showed the amorphous structure, and the current-voltage characteristics were non-linearly observed by the Schottky contact.

• 반도체디스플레이기술학회지
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• 제14권4호
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• pp.20-24
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• 2015

This study was explained the correlation between the O 1s spectra and the crystallization of ITO thin films. The crystal structure of ITO thin films changed with various annealing temperatures and annealing methods such as atmosphere or vaccum conditions. The amorphous structure observed from XRD pattern showed the O 1s spectra with 531.2 eV, and the crystal structure of annealed ITO films analyzed by XRD pattern had the O 1s spectra of 529.8 eV as lower binding energy then the 531.2 eV. Oxygen in view of ITO films was related to the crystallization, and the ITO films annealed in an atmosphere pressure showed higher crystal structure than the ITO annealed in a vaccum. It was indicated that the amorphous structure had higher binding energy than the crystal structure analyzed by O 1s spectra of ITO films.

• 한국광물학회지
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• 제5권1호
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• pp.32-41
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• 1992

점토광물들은 지질환경에 따라 다양한 화학성분을 갖게되는데, 화학성분의 변화는 X-선 회절도형 회절선 intensity에도 영향을 미치기 때문에 점토광물들의 정확한 정량분석을 위하여서는 유사한 화학식을 표준시료를 필요로 하게 된다. 대부분의 경우 특정성분의 표준시료를 확보하기 어렵지만, X-선 회절도형 계산방법을 응용하면 표준시료를 사용하지 않고 점토광물들의 정량분석을 실시할 수 있다. 대부분 심해저 퇴적물은 smectite, illite, chlorite, kaolinite듣 점토광물들을 함유하고 있는데, 특정한 화학성분을 갖는 이러한 네가지 점토광물들의 X-선 회절도형을 NEWMOD 프로그램을 이용하여 계산하였다. smectite와 illite의 001 회절선, chlorite의 004회절선, kaolinite의 002회적선의 이론적 peak intensity들을 계산된 X-선 회절도형으로부터 구하여 각 광물들의 MIF(Mineral Intensity Factor)값을 결정하였다. 실험에서 얻어진 시료의 peak intensity는 MIF값을 이용하여 교정하면 peak intensity값과 각 광물들의 wt%가 비례하도록 된다. 각 광물들의 wt% 총합계는 100wt%가 되도록 설정한 후 각 광물들의 구성비율을 이용하여 정량화 하였다. 이러한 정량분석방법은 분석하려는 광물의 화학식과 거의 비슷한 표준시료를 준비하지 않아도 되기때문에, X-선 회절도형의 계산방법을 이용한 정량분석은 표준시료를 구할 수 없거나 구하기 힘든 경우 유용하게 사용될 수 있다. 회절도형계산을 이용한 정량분석 방법은 서로 비슷한 지질환경에서 산출된 점토광물들을 대량으로 빠른 시간내에 분석하는데 이용할 수 있다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.995-998
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• 2003

This paper reports the correlation between dielectric constant and degree of amorphism of the hybrid type Si-O-C thin films. Si-O-C thin films were deposited by high density plasma chemical vapor deposition using bistrimethyl- silylmethane(BTMSM, $H_{9}$C$_3$-Si-C $H_2$-Si-C$_3$ $H_{9}$) and oxygen precursors with various flow rate ratio. As-deposited film and annealed films at 40$0^{\circ}C$ were analyzed by XRD. The Si-O-C thin films were amorphous from XRD patterns. For quantitative analysis, the diffraction pattern of the samples was transformed to radial distribution function by Fourier analysis, and then compared with each other. The degree of amorphism of annealed films was higher than that of as-deposited ones. The dielectric constant varied in accordance with flow rate ratio of precursors. The lowest dielectric constant was obtained from the as-deposited film which has the highest degree of amorphism after annealing.

• 한국결정성장학회지
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• 제26권5호
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• pp.188-192
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• 2016

본 연구에서는, 실리카 분말과 왕겨의 혼합체로부터 탄화된 물질로부터, 탄화규소 (SiC) 분말이 합성되었다. 탄화왕겨와 실리카의 열탄화환원 반응을 통해 얻어진, SiC 시료는 XRD 회절 패턴, FE-SEM 및 FE-TEM을 통해 분석되었다. 시료들은 XRD 패턴에서, $35^{\circ}$ 부근의 (111) peak는 매우 높은 intensity를 나타내었고, $60^{\circ}$, $72^{\circ}$ 부근의 (220), (311) peak 등 탄화규소 결정상에 대한 peak pattern이 명확하게 관찰되었다. Ar 분위기에서 탄화왕겨와 실리카의 혼합비율이 6 : 4인 혼합물로부터 합성된 시료는 XRD 패턴에서 잔류카본이 검출되지 않았으며, hexagonal 결정상의 비율이 비교적 낮고, cubic SiC 결정상이 주도적으로 나타내었다. 탄화왕겨와 실리카의 혼합비율이 6 : 4인 경우에 합성된 시료는 $5{\mu}m$ 이하의 미세한 입자들이 관찰되었으며, TEM 분석결과에서, SiC 결정질상의 (110) 회절패턴 형태를 나타내었다.

• 접착 및 계면
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• 제6권2호
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• pp.1-5
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• 2005

Single crystals of metallocene-catalyzed isotactic polypropylene (iPP) and/or syndiotactic PP (sPP) were prepared and preliminarily characterized. The crystallization was performed utilizing 0.1 % by weight concentrations of each PP in o-xylene in the range of temperature of $40{\sim}90^{\circ}C$. Following the XRD patterns, samples were ${\alpha}$-iPP and antichiral Cell III of sPP. The XRD pattern of iPP shows three ${\alpha}$-form peaks due to the (110), (040), (130) planes at $2{\theta}=14.2^{\circ}$, $17^{\circ}$, $18.8^{\circ}$, respectively. The XRD pattern of sPP is characterized by the presence of the (020) reflection at $16^{\circ}$. The melting point ($123^{\circ}C$ and $148^{\circ}C$, respectively) of the metallocene catalyzed iPP and sPP were generally lower than that of conventional PP ($160{\sim}170^{\circ}C$) due to the misinsertion of the monomer. When metallocene-catalyzed iPP samples were crystallized isothermally from solution grown at a lower temperature, lozenge shape single crystals were observed by transmission electron microscopy (TEM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

• 열처리공학회지
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• 제31권5호
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• pp.237-243
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• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

• Journal of Microbiology and Biotechnology
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• 제23권9호
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• pp.1287-1292
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• 2013

Extracellular biogenic synthesis of silver nanoparticles with various shapes using the rice bacterial blight bacterium Xanthomonas oryzae pv. oryzae BXO8 is reported. The synthesized silver nanoparticles were characterized by UV-Vis spectroscopy, powder X-ray diffractometry (XRD), scanning electron microscopy, energy dispersive X-ray spectrometry, and high-resolution transmission electron microscopy (HR-TEM). Based on the evidence of HR-TEM, the synthesized particles were found to be spherical, with anisotropic structures such as triangles and rods, with an average size of 14.86 nm. The crystalline nature of silver nanoparticles was evident from the bright circular spots in the SAED pattern, clear lattice fringes in the high-resolution TEM images, and peaks in the XRD pattern. The FTIR spectrum showed that biomolecules containing amide and carboxylate groups are involved in the reduction and stabilization of the silver nanoparticles. Using such a biological method for the synthesis of silver nanoparticles is a simple, viable, cost-effective, and environmentally friendly process, which can be used in antimicrobial therapy.