• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.718-722
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• 2011

In this work, we investigated to the etching characteristics of the TiN thin film in He/$BCl_3/Cl_2$ plasma. The etch rate was measured by the gas mixing ratio, the RF power, the DC bias voltage and the process pressure. The maximum etch rate in He/$BCl_3/Cl_2$ plasma was 59 nm/min. The etch rate increased as the RF power and the DC-bias voltage was increased. The chemical reaction on the surface of the etched the TiN thin films was investigated with X-ray photoelectron spectroscopy (XPS). The intensity of Ti 2p and N 1s peaks are varied during etching process. A new peak was appeared in He/$BCl_3/Cl_2$ plasma. The new peak was revealed Ti-$Cl_x$ by Cl 2p peak of XPS wild scan spectra analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.147-147
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• 2000

Chemisorption of oxygen molecules on the Si(111)-(7x7) surface has been studied extensively as a model for the initial-stage oxidation of the surface. The basic step to the surface oxidation is the dissociation of the adsorbed O2 molecules, but the dissociation procedure and the atomic structure of the reaction products still remains as a subject of debates. We present here density-functional theory calculations on the initial-stage oxidation states of the Si adatom site for all possible dissociation configurations that can be generated by multiple O2 reactions. We determine the equilibrium structures and analyze their electronic and vibrational properties in comparison with measured UPS, XPS, and EELS spectra. The O(ad) atom bonded on top of the Si adatom is always less stable than the O(ins) atom inserted into one of the adatom backbonds. Our electronic and vibrational analysis demonstrates further that the O(ad) and O(ins) atoms account well for the metastable and stable features in previous experiments, respectively. Moreover, the calculated decay pathways of the metastable structures and the comparison of the calculated O ls core-level shifts with XPS data provides a convincing argument in unambiguously identifying the experimental metastable and stable structures, thereby making it possible to build a correct atomic-scale picture of the initial-stage oxidation process on this surface.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.214-217
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• 2022

The effect of inductively coupled plasma (ICP) treatment with O₂ gas on the surface properties of poly(ether sulfone) (PES) was investigated. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical characteristics of the O₂ plasma-treated PES films. The surface roughness of the pristine and O₂ plasma-treated PES films for different RF powers of the ICP was determined using an atomic force microscope (AFM). The contact angles of the PES films were also measured, using which the surface free energies were calculated. The O1s XPS spectra of the PES films revealed that the number of polar functional groups increased following the O₂ plasma treatment. The AFM analysis showed the average surface roughness increased from 1.01 to 4.48 nm as the RF power of the ICP was increased. The contact angle measurements revealed that the PES films became more hydrophilic as the RF power of the ICP was increased. The total surface energy increased with the RF power of the ICP, resulting from the increased polar energy component.

• Journal of the Korean Chemical Society
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• v.42 no.6
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• pp.607-617
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• 1998

Au was dosed on $TiO_2(001)$ film grown epitaxially on Mo(100) surface in about 90 ${\AA}$ thickness. The growth mode of Au, thermal behavior and stability of the Au clusters, and the binding energy shift of Au 4f with the change in the amount of Au loading were studied by Auger Electron Spectroscopy (AES), Temperature Programmed Desorption (TPD) spectroscopy, Ion Scattering Spectroscopy (ISS), and X-ray Photoelectron Spectroscopy (XPS). Au grows three dimensionally on $TiO_2(001)$ film and the average size of Au clusters prepared at low temperature is smaller than those at higher temperature and the size increases with temperature irreversibly. Au clusters on $TiO_2(001)/Mo(100)$ start evaporation at 1000 K. TPD spectra of Au show very asymmetric peaks with the same leading edges irrespective of the amount of Au loading. The temperature at the peak maximum increases with the amount of Au. The desorption energy of Au obtained from the leading edge analysis of the TPD spectra is about 50 kcal/mol. The initial sticking coefficient of Au on $TiO_2(001)$ is constant in the temperature range of 200-600 K. The binding energy of Au 4f for the Au loaded on the film less than 2.0 MLE shifts to higher energy compared with the bulk Au. The shift is +0.3 eV at 0.1 MLE Au amount.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.4
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• pp.154-158
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• 2021

The optical transmittance of Mn-doped SnO₂ monolayer film increased gradually from 80.9 to 85.4 % at 550 nm wavelengths upon increasing the O₂/Ar+O₂ concentration rate from 0 to 7.9 % and the band gap energy changed from 3.0 to 3.6 eV. The resistivity tended to decrease from 3.21 Ω·cm to 0.03 Ω·cm, reaching a minimum at 2.7 %, and then gradually increased from 0.03 to 52.0 Ω·cm at higher O₂/Ar+O₂ gas concentration ratio. Based on XPS spectra analysis, the Sn 3d_5/2 peak of Mn-doped SnO₂ single layer shifted slightly from 486.40 to 486.58 and O_1s peak also shifted from 530.20 to 530.33 eV with increase the O₂/Ar+O₂ concentration ratio. Therefore, the XPS spectra results indicate that a multiphase with SnO and SnO₂ coexisted in the sputtered Mn-doped SnO₂ monolayer film.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.66-72
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• 2010

In this paper, AZO thin film was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method from a ZnO target mixed with 2[wt%] Al2O3. The flexible film-typed dye sensitized solar cell(F-DSC) was fabricated and photo-electric conversion efficiency was investigated. The results showed that the minimum resistivity and the maximum deposition rate of AZO conducting film were recorded as $1.8{\times}10^{-3}[{\Omega}{\cdot}cm]$ and 25.5[nm/min], respectively at r.f. power of 220[W]. From the analysis of XPS data an improvement of electrical resistivity or an increase in carrier concentration with increasing sputtering power may be related to the generation of lattice imperfections as a result of increasing component ratio of O1s/Zn2p, which generates donor carriers or active growth of crystalline grain. The photo-electric conversion efficiency of F-DSC with AZO conducting electrode was over 2.79[%], which was comparable as that with commercially available ITO electrode.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2170-2174
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• 2010

The surfaces of $TiO_2$ and ZnO nanoparticles have been modified by gold (Au) nanoparticles by a reduction method in solution. Their interfacial electronic structures and optical absorptions have been studied by depth-profiling X-ray photoelectron spectroscopy (XPS) and UV-vis absorption spectroscopy, respectively. Upon Au-modification, UV-vis absorption spectra reveal a broad surface plasmon peak at around 500 nm. For the as-prepared Au-modified $TiO_2$ and ZnO, the Au $4f_{7/2}$ XPS peaks exhibit at 83.7 and 83.9 eV, respectively. These are due to a charge transfer effect from the metal oxide support to the Au. For $TiO_2$, the larger binding energy shift from that (84.0 eV) of bulk Au could indicate that Au-modification site of $TiO_2$ is different from that of ZnO. On the basis of the XPS data with sputtering depth, we conclude that cationic (1+ and 3+) Au species, plausibly $Au(OH)_x$ (x = 1-3), commonly form mainly at the Au-$TiO_2$ and Au-ZnO interfaces. With $Ar^+$ ion sputtering, the oxidation state of Ti dramatically changes from 4+ to 3+ and 2+ while that (2+) of Zn shows no discernible change based on the binding energy position and the full-width at half maximum (FWHM).

• Journal of Environmental Science International
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• v.16 no.12
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• pp.1431-1437
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• 2007

Cobalt titanates($CoTiO_x$), such as $CoTiO_3$ and $Co_2TiO_4$, have been synthesized via a solid-state reaction and characterized using X-ray diffraction(XRD) and X-ray photoelectron spectroscopic(XPS) measurement techniques, prior to being used for continuous wet trichloroethylene(TCE) oxidation at $36^{\circ}C$, to support our earlier chemical structure model for Co species in 5 wt% $CoO_x/TiO_2$(fresh) and(spent) catalysts. Each XRD pattern for the synthesized $CoTiO_3$ and $Co_2TiO_4$ was very close to those obtained from the respective standard XRD data files. The two $CoTiO_x$ samples gave Co 2p XPS spectra consisting of very strong main peaks for Co $2p_{3/2}$ and $2p_{1/2}$ with corresponding satellite structures at higher binding energies. The Co $2p_{3/2}$ main structure appeared at 781.3 eV for the $CoTiO_3$, and it was indicated at 781.1 eV with the $Co_2TiO_4$. Not only could these binding energy values be very similar to that exhibited for the 5 wt% $CoO_x/TiO_2$(fresh), but the spin-orbit splitting(${\Delta}E$) had also no noticeable difference between the cobalt titanates and a sample of the fresh catalyst. Neither of all the $CoTiO_x$ samples were active for the wet TCE oxidation, as expected, but a sample of pure $Co_3O_4$ had a good activity for this reaction. The earlier proposed model for the surface $CoO_x$ species existing with the fresh and spent catalysts is very consistent with the XPS characterization and activity measurements for the cobalt titanates.

• Fashion & Textile Research Journal
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• v.15 no.2
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• pp.286-293
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• 2013

This study investigates the attachment of glycyrrhizin to fabric using an X-ray photoelectron spectrophotometer( XPS). XPS spectra analysis showed that carbon content on treated fabrics with 0.2% glycyrrhizin increased to 2.699% for silk, 2.829% for nylon, 1.505% for cotton, respectively. The results show that glycyrrhizin is absorbed on treated fabrics. The glycyrrhizin extraction method makes radix glycyrrhizae powder 10g treat the first and the second treatment with ethanol, remove impurities on $75^{\circ}C$; subsequently, it is treated for 10 hours with ethanol 75% on $85^{\circ}C$ and lyophilizated. As the result, glycyrrhizin is extracted 1.7g in GL-I, 1.1 g in GL-II. As the result of abstracting glycyrrhizin with two methods, pure glycyrrhizin was abstracted 45.9% in GL-I, 74.9% in GL-II. GL-I, GL-II; in addition, glycyrrhizin( Japan) on TLC plate was separated in Rf 0.6. By GL-II extract method, this experiment obtained glycyrrhizin 15 g treated in a bath ratio set to 1: 100. Silk fabric was treated at $80^{\circ}C$, 60 min. in, nylon fabric $10^{\circ}C$, 70 min., and cotton fabric $30^{\circ}C$, 80 min.; subsequently, silk, nylon, cotton fabrics showed a 99.9% antibacterial activity for Staphylococcus aureus and Klebsiella pneumoniae.

• Korean Journal of Materials Research
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• v.23 no.2
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• pp.104-111
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• 2013

In this study, GaN powders were synthesized from gallium oxide-hydroxide (GaOOH) through an ammonification process in an $NH_3$ flow with the variation of $B_2O_3$ additives within a temperature range of $300-1050^{\circ}C$. The additive effect of $B_2O_3$ on the hexagonal phase GaN powder synthesis route was examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Fourier transformation infrared transmission (FTIR) spectroscopy. With increasing the mol% of $B_2O_3$ additive in the GaOOH precursor powder, the transition temperature and the activation energy for GaN powder formation increased while the GaN synthesis limit-time ($t_c$) shortened. The XPS results showed that Boron compounds of $B_2O_3$ and BN coexisted in the synthesized GaN powders. From the FTIR spectra, we were able to confirm that the GaN powder consisted of an amorphous or cubic phase $B_2O_3$ due to bond formation between B and O and the amorphous phase BN due to B-N bonds. The GaN powder synthesized from GaOOH and $B_2O_3$ mixed powder by an ammonification route through ${\beta}-Ga_2O_3$ intermediate state. During the ammonification process, boron compounds of $B_2O_3$ and BN coated ${\beta}-Ga_2O_3$ and GaN particles limited further nitridation processes.